AUPO347196A0 - Improved method of forming polycrystalline-silicon films on glass - Google Patents

Improved method of forming polycrystalline-silicon films on glass

Info

Publication number
AUPO347196A0
AUPO347196A0 AUPO3471A AUPO347196A AUPO347196A0 AU PO347196 A0 AUPO347196 A0 AU PO347196A0 AU PO3471 A AUPO3471 A AU PO3471A AU PO347196 A AUPO347196 A AU PO347196A AU PO347196 A0 AUPO347196 A0 AU PO347196A0
Authority
AU
Australia
Prior art keywords
glass
improved method
silicon films
forming polycrystalline
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AUPO3471A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pacific Solar Pty Ltd
Original Assignee
Pacific Solar Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pacific Solar Pty Ltd filed Critical Pacific Solar Pty Ltd
Priority to AUPO3471A priority Critical patent/AUPO347196A0/en
Publication of AUPO347196A0 publication Critical patent/AUPO347196A0/en
Priority to IDW990476A priority patent/ID22434A/id
Priority to EP97910163A priority patent/EP0946974A4/en
Priority to AU47677/97A priority patent/AU718641B2/en
Priority to CN97199467A priority patent/CN1115715C/zh
Priority to PCT/AU1997/000753 priority patent/WO1998020524A1/en
Priority to MYPI97005277A priority patent/MY124232A/en
Priority to JP52088198A priority patent/JP4427104B2/ja
Priority to US09/297,502 priority patent/US6624009B1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/245—Oxides by deposition from the vapour phase
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
    • C03C17/3435—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a nitride, oxynitride, boronitride or carbonitride
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
    • C03C17/3482—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising silicon, hydrogenated silicon or a silicide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/131—Recrystallisation; Crystallization of amorphous or microcrystalline semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H10P14/2925—Surface structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C03C2217/282—Carbides, silicides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Surface Treatment Of Glass (AREA)
  • Photovoltaic Devices (AREA)
AUPO3471A 1996-11-06 1996-11-06 Improved method of forming polycrystalline-silicon films on glass Abandoned AUPO347196A0 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
AUPO3471A AUPO347196A0 (en) 1996-11-06 1996-11-06 Improved method of forming polycrystalline-silicon films on glass
IDW990476A ID22434A (id) 1996-11-06 1997-11-06 Pembentukan suatu film semikonduktor kristalin diatas substrat gelas
EP97910163A EP0946974A4 (en) 1996-11-06 1997-11-06 PRODUCTION OF A CRYSTALLINE SEMICONDUCTOR FILM ON A GLASS SUBSTRATE
AU47677/97A AU718641B2 (en) 1996-11-06 1997-11-06 Forming a crystalline semiconductor film on a glass substrate
CN97199467A CN1115715C (zh) 1996-11-06 1997-11-06 处理半导体薄膜的方法及利用此方法所制造的半导体器件
PCT/AU1997/000753 WO1998020524A1 (en) 1996-11-06 1997-11-06 Forming a crystalline semiconductor film on a glass substrate
MYPI97005277A MY124232A (en) 1996-11-06 1997-11-06 Forming a crystalline semiconductor film on a glass substrate.
JP52088198A JP4427104B2 (ja) 1996-11-06 1997-11-06 ガラス基板上への結晶半導体膜形成方法
US09/297,502 US6624009B1 (en) 1996-11-06 1997-11-06 Forming a crystalline semiconductor film on a glass substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AUPO3471A AUPO347196A0 (en) 1996-11-06 1996-11-06 Improved method of forming polycrystalline-silicon films on glass

Publications (1)

Publication Number Publication Date
AUPO347196A0 true AUPO347196A0 (en) 1996-12-05

Family

ID=3797782

Family Applications (2)

Application Number Title Priority Date Filing Date
AUPO3471A Abandoned AUPO347196A0 (en) 1996-11-06 1996-11-06 Improved method of forming polycrystalline-silicon films on glass
AU47677/97A Ceased AU718641B2 (en) 1996-11-06 1997-11-06 Forming a crystalline semiconductor film on a glass substrate

Family Applications After (1)

Application Number Title Priority Date Filing Date
AU47677/97A Ceased AU718641B2 (en) 1996-11-06 1997-11-06 Forming a crystalline semiconductor film on a glass substrate

Country Status (8)

Country Link
US (1) US6624009B1 (https=)
EP (1) EP0946974A4 (https=)
JP (1) JP4427104B2 (https=)
CN (1) CN1115715C (https=)
AU (2) AUPO347196A0 (https=)
ID (1) ID22434A (https=)
MY (1) MY124232A (https=)
WO (1) WO1998020524A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115632080A (zh) * 2022-09-30 2023-01-20 湖南兆湘光电高端装备研究院有限公司 电池片双玻组件和光伏系统

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000159546A (ja) * 1998-11-25 2000-06-13 Nippon Sheet Glass Co Ltd 熱線反射ガラス及びこれを用いた複層ガラス
CN1262508C (zh) * 2000-08-28 2006-07-05 应用材料有限公司 玻璃衬底的预多晶硅被覆
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US7540920B2 (en) 2002-10-18 2009-06-02 Applied Materials, Inc. Silicon-containing layer deposition with silicon compounds
US7132338B2 (en) 2003-10-10 2006-11-07 Applied Materials, Inc. Methods to fabricate MOSFET devices using selective deposition process
US8501594B2 (en) 2003-10-10 2013-08-06 Applied Materials, Inc. Methods for forming silicon germanium layers
US7166528B2 (en) 2003-10-10 2007-01-23 Applied Materials, Inc. Methods of selective deposition of heavily doped epitaxial SiGe
US7078302B2 (en) 2004-02-23 2006-07-18 Applied Materials, Inc. Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal
US20090107545A1 (en) * 2006-10-09 2009-04-30 Soltaix, Inc. Template for pyramidal three-dimensional thin-film solar cell manufacturing and methods of use
US8399331B2 (en) 2007-10-06 2013-03-19 Solexel Laser processing for high-efficiency thin crystalline silicon solar cell fabrication
US8129822B2 (en) * 2006-10-09 2012-03-06 Solexel, Inc. Template for three-dimensional thin-film solar cell manufacturing and methods of use
US9508886B2 (en) 2007-10-06 2016-11-29 Solexel, Inc. Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam
US8420435B2 (en) * 2009-05-05 2013-04-16 Solexel, Inc. Ion implantation fabrication process for thin-film crystalline silicon solar cells
US7312128B2 (en) 2004-12-01 2007-12-25 Applied Materials, Inc. Selective epitaxy process with alternating gas supply
US7560352B2 (en) 2004-12-01 2009-07-14 Applied Materials, Inc. Selective deposition
US7235492B2 (en) 2005-01-31 2007-06-26 Applied Materials, Inc. Low temperature etchant for treatment of silicon-containing surfaces
US20060176660A1 (en) * 2005-02-07 2006-08-10 Ahmad Amiri Ultra mobile communicating computer
KR101171189B1 (ko) * 2005-10-21 2012-08-06 삼성전자주식회사 더미 글래스 기판과 표시장치의 제조방법
US7674337B2 (en) 2006-04-07 2010-03-09 Applied Materials, Inc. Gas manifolds for use during epitaxial film formation
JP5101038B2 (ja) 2006-05-19 2012-12-19 株式会社フジクラ 電極基板の製造方法、電極基板の評価方法
CN101496150B (zh) 2006-07-31 2012-07-18 应用材料公司 控制外延层形成期间形态的方法
US7999174B2 (en) * 2006-10-09 2011-08-16 Solexel, Inc. Solar module structures and assembly methods for three-dimensional thin-film solar cells
US20080264477A1 (en) * 2006-10-09 2008-10-30 Soltaix, Inc. Methods for manufacturing three-dimensional thin-film solar cells
US8035028B2 (en) * 2006-10-09 2011-10-11 Solexel, Inc. Pyramidal three-dimensional thin-film solar cells
US8293558B2 (en) * 2006-10-09 2012-10-23 Solexel, Inc. Method for releasing a thin-film substrate
US20100304521A1 (en) * 2006-10-09 2010-12-02 Solexel, Inc. Shadow Mask Methods For Manufacturing Three-Dimensional Thin-Film Solar Cells
US8512581B2 (en) * 2006-10-09 2013-08-20 Solexel, Inc. Methods for liquid transfer coating of three-dimensional substrates
US8193076B2 (en) 2006-10-09 2012-06-05 Solexel, Inc. Method for releasing a thin semiconductor substrate from a reusable template
US7811911B2 (en) * 2006-11-07 2010-10-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5004160B2 (ja) * 2006-12-12 2012-08-22 株式会社日本製鋼所 結晶質半導体膜の製造方法および半導体膜の加熱制御方法ならびに半導体結晶化装置
US20080236665A1 (en) * 2007-04-02 2008-10-02 Jianming Fu Method for Rapid Liquid Phase Deposition of Crystalline Si Thin Films on Large Glass Substrates for Solar Cell Applications
US20100144080A1 (en) * 2008-06-02 2010-06-10 Solexel, Inc. Method and apparatus to transfer coat uneven surface
WO2010033638A1 (en) * 2008-09-16 2010-03-25 Arizona Board of Regents, a body corporate acting for and on behalf of Arizona State University Thin group iv semiconductor structures
US8294026B2 (en) 2008-11-13 2012-10-23 Solexel, Inc. High-efficiency thin-film solar cells
US8288195B2 (en) * 2008-11-13 2012-10-16 Solexel, Inc. Method for fabricating a three-dimensional thin-film semiconductor substrate from a template
MY160251A (en) * 2008-11-26 2017-02-28 Solexel Inc Truncated pyramid -structures for see-through solar cells
US9076642B2 (en) 2009-01-15 2015-07-07 Solexel, Inc. High-Throughput batch porous silicon manufacturing equipment design and processing methods
JP2012515453A (ja) * 2009-01-15 2012-07-05 ソレクセル、インコーポレイテッド 多孔質シリコン電解エッチングシステム及び方法
US8906218B2 (en) 2010-05-05 2014-12-09 Solexel, Inc. Apparatus and methods for uniformly forming porous semiconductor on a substrate
MY162405A (en) * 2009-02-06 2017-06-15 Solexel Inc Trench Formation Method For Releasing A Thin-Film Substrate From A Reusable Semiconductor Template
US8828517B2 (en) 2009-03-23 2014-09-09 Solexel, Inc. Structure and method for improving solar cell efficiency and mechanical strength
CN102427971B (zh) * 2009-04-14 2015-01-07 速力斯公司 高效外延化学气相沉积(cvd)反应器
US9099584B2 (en) * 2009-04-24 2015-08-04 Solexel, Inc. Integrated three-dimensional and planar metallization structure for thin film solar cells
US9318644B2 (en) 2009-05-05 2016-04-19 Solexel, Inc. Ion implantation and annealing for thin film crystalline solar cells
EP2427914A4 (en) 2009-05-05 2013-06-05 Solexel Inc HIGH PRODUCTION PLANT FOR THE PRODUCTION OF POROUS SEMICONDUCTORS
US8445314B2 (en) * 2009-05-22 2013-05-21 Solexel, Inc. Method of creating reusable template for detachable thin film substrate
EP2436028B1 (en) * 2009-05-29 2016-08-10 Solexel, Inc. See-through three-dimensional thin-film solar cell semiconductor substrate and methods of manufacturing
EP2510550A4 (en) 2009-12-09 2014-12-24 Solexel Inc HIGH-EFFECT PHOTOVOLTAIC SOLAR CELL STRUCTURES WITH REAR-SIDE CONTACTS AND METHODS OF MAKING USING THREE-DIMENSIONAL SEMICONDUCTOR ABSORBERS
CN102844883B (zh) 2010-02-12 2016-01-20 速力斯公司 用于制造光电池和微电子器件的半导体衬底的双面可重复使用的模板
US9870937B2 (en) 2010-06-09 2018-01-16 Ob Realty, Llc High productivity deposition reactor comprising a gas flow chamber having a tapered gas flow space
US8946547B2 (en) 2010-08-05 2015-02-03 Solexel, Inc. Backplane reinforcement and interconnects for solar cells
EP2710639A4 (en) 2011-05-20 2015-11-25 Solexel Inc SELF-ACTIVATED FRONT PANEL PRE-VOLTAGE FOR A SOLAR CELL
JP5983100B2 (ja) * 2011-07-19 2016-08-31 日本電気硝子株式会社 ガラス基材
US8722136B2 (en) * 2011-10-21 2014-05-13 First Solar, Inc. Heat strengthening of a glass superstrate for thin film photovoltaic devices
JP2014006049A (ja) * 2012-06-21 2014-01-16 Sumitomo Bakelite Co Ltd マイクロ流路チップの製造方法
EP3805173B1 (en) * 2018-05-31 2022-06-01 Panasonic Intellectual Property Management Co., Ltd. Glass panel unit manufacturing method
CN112250292B (zh) * 2020-10-13 2022-05-06 浙江旗滨节能玻璃有限公司 功能玻璃的热处理工艺及功能玻璃

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61203631A (ja) * 1985-03-07 1986-09-09 Toshiba Corp 被膜の形成方法
JPS63221610A (ja) 1987-03-11 1988-09-14 Hitachi Ltd 薄膜半導体装置の製造方法
JPH02297923A (ja) 1989-05-11 1990-12-10 Seiko Epson Corp 多結晶シリコン再結晶化法
JPH05218367A (ja) 1992-02-03 1993-08-27 Sharp Corp 多結晶シリコン薄膜用基板および多結晶シリコン薄膜の作製方法
CN100465742C (zh) * 1992-08-27 2009-03-04 株式会社半导体能源研究所 有源矩阵显示器
US5372860A (en) * 1993-07-06 1994-12-13 Corning Incorporated Silicon device production
KR100333153B1 (ko) * 1993-09-07 2002-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치제작방법
JPH07109573A (ja) 1993-10-12 1995-04-25 Semiconductor Energy Lab Co Ltd ガラス基板および加熱処理方法
JPH1074948A (ja) * 1996-08-30 1998-03-17 Toshiba Corp 液晶表示装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115632080A (zh) * 2022-09-30 2023-01-20 湖南兆湘光电高端装备研究院有限公司 电池片双玻组件和光伏系统

Also Published As

Publication number Publication date
EP0946974A1 (en) 1999-10-06
EP0946974A4 (en) 2000-11-08
JP4427104B2 (ja) 2010-03-03
CN1236481A (zh) 1999-11-24
JP2001503917A (ja) 2001-03-21
US6624009B1 (en) 2003-09-23
CN1115715C (zh) 2003-07-23
AU4767797A (en) 1998-05-29
ID22434A (id) 1999-10-14
AU718641B2 (en) 2000-04-20
WO1998020524A1 (en) 1998-05-14
MY124232A (en) 2006-06-30

Similar Documents

Publication Publication Date Title
AUPO347196A0 (en) Improved method of forming polycrystalline-silicon films on glass
AU4740796A (en) Scratch resistant optical films and method for producing same
AU6229996A (en) An optical apparatus and method
AU5197898A (en) Optical glass
AU1722799A (en) An optical film and process for manufacture thereof
AUPN056295A0 (en) Chilling apparatus
AU4313196A (en) Coatings on glass
EP0694799A3 (en) Optical apparatus
AU6167796A (en) Debossable films
EP0799690A3 (en) Lens injection-compression-molding method
EP0738906A3 (en) Method for preparing optical film
AUPM970294A0 (en) An optical control method
AU1223097A (en) A method of making glass
AU4966096A (en) Method for recycling glass and its uses
AU7029796A (en) Method and apparatus for making glass
EP0725269A3 (en) Optical sensor and method therefor
EP0773459A3 (en) Optical apparatus
AU3746397A (en) Tempering method
AU4152197A (en) Method for measurement of light transmittance
AU679363B2 (en) Channel sounding method
AU3991997A (en) Process for forming silica film and composition therefor
AU6466296A (en) Glasses
AU3616195A (en) Optical windows
AU4771397A (en) Electrochromic mirror and method for producing an electrochromic mirror
AU3636895A (en) Freezing method