JP2001502754A - リアクティブ・マグネトロンスパッタリング装置および方法 - Google Patents
リアクティブ・マグネトロンスパッタリング装置および方法Info
- Publication number
- JP2001502754A JP2001502754A JP10501529A JP50152998A JP2001502754A JP 2001502754 A JP2001502754 A JP 2001502754A JP 10501529 A JP10501529 A JP 10501529A JP 50152998 A JP50152998 A JP 50152998A JP 2001502754 A JP2001502754 A JP 2001502754A
- Authority
- JP
- Japan
- Prior art keywords
- magnetron
- substrate
- chamber
- gas
- torr
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 14
- 239000007789 gas Substances 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 239000011261 inert gas Substances 0.000 claims abstract description 20
- 230000003287 optical effect Effects 0.000 claims abstract description 16
- 239000013077 target material Substances 0.000 claims abstract description 14
- 150000001875 compounds Chemical class 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims description 26
- 238000000151 deposition Methods 0.000 claims description 22
- 230000008021 deposition Effects 0.000 claims description 19
- 239000002245 particle Substances 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 17
- 238000010891 electric arc Methods 0.000 claims description 2
- 239000010409 thin film Substances 0.000 abstract description 32
- 238000004544 sputter deposition Methods 0.000 abstract description 22
- 238000001659 ion-beam spectroscopy Methods 0.000 abstract description 18
- 239000000203 mixture Substances 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 4
- 238000012856 packing Methods 0.000 abstract description 4
- 238000000429 assembly Methods 0.000 abstract description 3
- 230000000712 assembly Effects 0.000 abstract description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 16
- 150000002500 ions Chemical class 0.000 description 16
- 238000005086 pumping Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 9
- 229910052786 argon Inorganic materials 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 208000005374 Poisoning Diseases 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 231100000572 poisoning Toxicity 0.000 description 4
- 230000000607 poisoning effect Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000007792 addition Methods 0.000 description 3
- 239000013256 coordination polymer Substances 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZVNYJIZDIRKMBF-UHFFFAOYSA-N Vesnarinone Chemical compound C1=C(OC)C(OC)=CC=C1C(=O)N1CCN(C=2C=C3CCC(=O)NC3=CC=2)CC1 ZVNYJIZDIRKMBF-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000869 ion-assisted deposition Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 235000015067 sauces Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0047—Activation or excitation of reactive gases outside the coating chamber
- C23C14/0052—Bombardment of substrates by reactive ion beams
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US1996/009742 WO1997047781A1 (en) | 1996-06-10 | 1996-06-10 | Reactive magnetron sputtering apparatus and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001502754A true JP2001502754A (ja) | 2001-02-27 |
Family
ID=22255287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10501529A Ceased JP2001502754A (ja) | 1996-06-10 | 1996-06-10 | リアクティブ・マグネトロンスパッタリング装置および方法 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0956375A1 (de) |
| JP (1) | JP2001502754A (de) |
| CA (1) | CA2254354A1 (de) |
| WO (1) | WO1997047781A1 (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003013217A (ja) * | 2001-06-28 | 2003-01-15 | Ulvac Japan Ltd | 誘電体膜の成膜方法及び成膜装置 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6500676B1 (en) * | 2001-08-20 | 2002-12-31 | Honeywell International Inc. | Methods and apparatus for depositing magnetic films |
| KR20040046571A (ko) * | 2002-11-27 | 2004-06-05 | 주식회사 피앤아이 | 이온빔을 이용한 재료의 표면 처리 장치 |
| EP1628322A1 (de) * | 2004-08-17 | 2006-02-22 | Applied Films GmbH & Co. KG | Haltevorrichtung für eine Blende |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3331707A1 (de) * | 1983-09-02 | 1985-03-21 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren und vorrichtung zum reaktiven aufstaeuben von verbindungen von metallen und halbleitern |
| US4716340A (en) * | 1985-12-10 | 1987-12-29 | Denton Vacuum Inc | Pre-ionization aided sputter gun |
| US4931158A (en) * | 1988-03-22 | 1990-06-05 | The Regents Of The Univ. Of Calif. | Deposition of films onto large area substrates using modified reactive magnetron sputtering |
| DE3920835C2 (de) * | 1989-06-24 | 1997-12-18 | Leybold Ag | Einrichtung zum Beschichten von Substraten |
-
1996
- 1996-06-10 EP EP96918398A patent/EP0956375A1/de not_active Withdrawn
- 1996-06-10 CA CA002254354A patent/CA2254354A1/en not_active Abandoned
- 1996-06-10 WO PCT/US1996/009742 patent/WO1997047781A1/en not_active Application Discontinuation
- 1996-06-10 JP JP10501529A patent/JP2001502754A/ja not_active Ceased
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003013217A (ja) * | 2001-06-28 | 2003-01-15 | Ulvac Japan Ltd | 誘電体膜の成膜方法及び成膜装置 |
| JP4678996B2 (ja) * | 2001-06-28 | 2011-04-27 | 株式会社アルバック | 誘電体膜の成膜方法及び成膜装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CA2254354A1 (en) | 1997-12-18 |
| EP0956375A1 (de) | 1999-11-17 |
| WO1997047781A1 (en) | 1997-12-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20040106 |
|
| A313 | Final decision of rejection without a dissenting response from the applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A313 Effective date: 20040524 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20040622 |