JP2001502754A - リアクティブ・マグネトロンスパッタリング装置および方法 - Google Patents

リアクティブ・マグネトロンスパッタリング装置および方法

Info

Publication number
JP2001502754A
JP2001502754A JP10501529A JP50152998A JP2001502754A JP 2001502754 A JP2001502754 A JP 2001502754A JP 10501529 A JP10501529 A JP 10501529A JP 50152998 A JP50152998 A JP 50152998A JP 2001502754 A JP2001502754 A JP 2001502754A
Authority
JP
Japan
Prior art keywords
magnetron
substrate
chamber
gas
torr
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP10501529A
Other languages
English (en)
Japanese (ja)
Inventor
エイ スコービー,マイケル
Original Assignee
コーニング オーシーエイ コーポレーション
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by コーニング オーシーエイ コーポレーション filed Critical コーニング オーシーエイ コーポレーション
Publication of JP2001502754A publication Critical patent/JP2001502754A/ja
Ceased legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021Reactive sputtering or evaporation
    • C23C14/0036Reactive sputtering
    • C23C14/0047Activation or excitation of reactive gases outside the coating chamber
    • C23C14/0052Bombardment of substrates by reactive ion beams
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021Reactive sputtering or evaporation
    • C23C14/0036Reactive sputtering
    • C23C14/0063Reactive sputtering characterised by means for introducing or removing gases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • H01J2237/08Ion sources

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP10501529A 1996-06-10 1996-06-10 リアクティブ・マグネトロンスパッタリング装置および方法 Ceased JP2001502754A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1996/009742 WO1997047781A1 (en) 1996-06-10 1996-06-10 Reactive magnetron sputtering apparatus and method

Publications (1)

Publication Number Publication Date
JP2001502754A true JP2001502754A (ja) 2001-02-27

Family

ID=22255287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10501529A Ceased JP2001502754A (ja) 1996-06-10 1996-06-10 リアクティブ・マグネトロンスパッタリング装置および方法

Country Status (4)

Country Link
EP (1) EP0956375A1 (de)
JP (1) JP2001502754A (de)
CA (1) CA2254354A1 (de)
WO (1) WO1997047781A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003013217A (ja) * 2001-06-28 2003-01-15 Ulvac Japan Ltd 誘電体膜の成膜方法及び成膜装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6500676B1 (en) * 2001-08-20 2002-12-31 Honeywell International Inc. Methods and apparatus for depositing magnetic films
KR20040046571A (ko) * 2002-11-27 2004-06-05 주식회사 피앤아이 이온빔을 이용한 재료의 표면 처리 장치
EP1628322A1 (de) * 2004-08-17 2006-02-22 Applied Films GmbH & Co. KG Haltevorrichtung für eine Blende

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3331707A1 (de) * 1983-09-02 1985-03-21 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum reaktiven aufstaeuben von verbindungen von metallen und halbleitern
US4716340A (en) * 1985-12-10 1987-12-29 Denton Vacuum Inc Pre-ionization aided sputter gun
US4931158A (en) * 1988-03-22 1990-06-05 The Regents Of The Univ. Of Calif. Deposition of films onto large area substrates using modified reactive magnetron sputtering
DE3920835C2 (de) * 1989-06-24 1997-12-18 Leybold Ag Einrichtung zum Beschichten von Substraten

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003013217A (ja) * 2001-06-28 2003-01-15 Ulvac Japan Ltd 誘電体膜の成膜方法及び成膜装置
JP4678996B2 (ja) * 2001-06-28 2011-04-27 株式会社アルバック 誘電体膜の成膜方法及び成膜装置

Also Published As

Publication number Publication date
WO1997047781A1 (en) 1997-12-18
EP0956375A1 (de) 1999-11-17
CA2254354A1 (en) 1997-12-18

Similar Documents

Publication Publication Date Title
US5525199A (en) Low pressure reactive magnetron sputtering apparatus and method
US5824197A (en) Shield for a physical vapor deposition chamber
US6274014B1 (en) Method for forming a thin film of a metal compound by vacuum deposition
EP0908531B1 (de) Vorrichtung und Verfahren zur Herstellung einer Dünnschicht einer Verbindung
US4793908A (en) Multiple ion source method and apparatus for fabricating multilayer optical films
US5334302A (en) Magnetron sputtering apparatus and sputtering gun for use in the same
KR100278190B1 (ko) 박막형성장치및이를이용한박막형성방법
EP1350864A2 (de) Verfahren zur Herstellung einer dünnen Schicht und Vorrrichtung zur Durchführung dieses Verfahrens
JP2002069634A (ja) 薄膜作製方法および薄膜作製装置
JPH04371578A (ja) マグネトロンスパッタリング装置
JP2001502754A (ja) リアクティブ・マグネトロンスパッタリング装置および方法
US5670030A (en) Methods for preparing low scatter optical coatings
US6494997B1 (en) Radio frequency magnetron sputtering for lighting applications
JPH11106911A (ja) 薄膜形成装置及びそれを用いた化合物薄膜の形成法
JPH0878333A (ja) 膜形成用プラズマ装置
JP2002294446A (ja) スパッタ源及び成膜装置
KR20000016453A (ko) 반응 자전관 스퍼터링 장치 및 방법
Musil Basic properties of low-pressure plasma
JPH07268624A (ja) 放電装置
JP3727679B2 (ja) 薄膜の製造方法
JPH02290966A (ja) スパッタリング装置およびその制御方法
JPH067548B2 (ja) 薄膜形成方法
JPH11199377A (ja) 結晶性薄膜形成方法
JP2001140068A (ja) 光学薄膜の成膜方法および成膜装置
JP2000171606A (ja) 酸化チタン被覆プラスチックフィルムの製造方法および酸化チタン被覆プラスチックフィルム

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20040106

A313 Final decision of rejection without a dissenting response from the applicant

Free format text: JAPANESE INTERMEDIATE CODE: A313

Effective date: 20040524

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20040622