JP2001502754A - リアクティブ・マグネトロンスパッタリング装置および方法 - Google Patents
リアクティブ・マグネトロンスパッタリング装置および方法Info
- Publication number
- JP2001502754A JP2001502754A JP10501529A JP50152998A JP2001502754A JP 2001502754 A JP2001502754 A JP 2001502754A JP 10501529 A JP10501529 A JP 10501529A JP 50152998 A JP50152998 A JP 50152998A JP 2001502754 A JP2001502754 A JP 2001502754A
- Authority
- JP
- Japan
- Prior art keywords
- magnetron
- substrate
- chamber
- gas
- torr
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0047—Activation or excitation of reactive gases outside the coating chamber
- C23C14/0052—Bombardment of substrates by reactive ion beams
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US1996/009742 WO1997047781A1 (en) | 1996-06-10 | 1996-06-10 | Reactive magnetron sputtering apparatus and method |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2001502754A true JP2001502754A (ja) | 2001-02-27 |
Family
ID=22255287
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10501529A Ceased JP2001502754A (ja) | 1996-06-10 | 1996-06-10 | リアクティブ・マグネトロンスパッタリング装置および方法 |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0956375A1 (de) |
JP (1) | JP2001502754A (de) |
CA (1) | CA2254354A1 (de) |
WO (1) | WO1997047781A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003013217A (ja) * | 2001-06-28 | 2003-01-15 | Ulvac Japan Ltd | 誘電体膜の成膜方法及び成膜装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6500676B1 (en) * | 2001-08-20 | 2002-12-31 | Honeywell International Inc. | Methods and apparatus for depositing magnetic films |
KR20040046571A (ko) * | 2002-11-27 | 2004-06-05 | 주식회사 피앤아이 | 이온빔을 이용한 재료의 표면 처리 장치 |
EP1628322A1 (de) * | 2004-08-17 | 2006-02-22 | Applied Films GmbH & Co. KG | Haltevorrichtung für eine Blende |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3331707A1 (de) * | 1983-09-02 | 1985-03-21 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren und vorrichtung zum reaktiven aufstaeuben von verbindungen von metallen und halbleitern |
US4716340A (en) * | 1985-12-10 | 1987-12-29 | Denton Vacuum Inc | Pre-ionization aided sputter gun |
US4931158A (en) * | 1988-03-22 | 1990-06-05 | The Regents Of The Univ. Of Calif. | Deposition of films onto large area substrates using modified reactive magnetron sputtering |
DE3920835C2 (de) * | 1989-06-24 | 1997-12-18 | Leybold Ag | Einrichtung zum Beschichten von Substraten |
-
1996
- 1996-06-10 WO PCT/US1996/009742 patent/WO1997047781A1/en not_active Application Discontinuation
- 1996-06-10 EP EP96918398A patent/EP0956375A1/de not_active Withdrawn
- 1996-06-10 JP JP10501529A patent/JP2001502754A/ja not_active Ceased
- 1996-06-10 CA CA002254354A patent/CA2254354A1/en not_active Abandoned
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003013217A (ja) * | 2001-06-28 | 2003-01-15 | Ulvac Japan Ltd | 誘電体膜の成膜方法及び成膜装置 |
JP4678996B2 (ja) * | 2001-06-28 | 2011-04-27 | 株式会社アルバック | 誘電体膜の成膜方法及び成膜装置 |
Also Published As
Publication number | Publication date |
---|---|
WO1997047781A1 (en) | 1997-12-18 |
EP0956375A1 (de) | 1999-11-17 |
CA2254354A1 (en) | 1997-12-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5525199A (en) | Low pressure reactive magnetron sputtering apparatus and method | |
US5824197A (en) | Shield for a physical vapor deposition chamber | |
US6274014B1 (en) | Method for forming a thin film of a metal compound by vacuum deposition | |
EP0908531B1 (de) | Vorrichtung und Verfahren zur Herstellung einer Dünnschicht einer Verbindung | |
US4793908A (en) | Multiple ion source method and apparatus for fabricating multilayer optical films | |
US5334302A (en) | Magnetron sputtering apparatus and sputtering gun for use in the same | |
KR100278190B1 (ko) | 박막형성장치및이를이용한박막형성방법 | |
EP1350864A2 (de) | Verfahren zur Herstellung einer dünnen Schicht und Vorrrichtung zur Durchführung dieses Verfahrens | |
JP2002069634A (ja) | 薄膜作製方法および薄膜作製装置 | |
JPH04371578A (ja) | マグネトロンスパッタリング装置 | |
JP2001502754A (ja) | リアクティブ・マグネトロンスパッタリング装置および方法 | |
US5670030A (en) | Methods for preparing low scatter optical coatings | |
US6494997B1 (en) | Radio frequency magnetron sputtering for lighting applications | |
JPH11106911A (ja) | 薄膜形成装置及びそれを用いた化合物薄膜の形成法 | |
JPH0878333A (ja) | 膜形成用プラズマ装置 | |
JP2002294446A (ja) | スパッタ源及び成膜装置 | |
KR20000016453A (ko) | 반응 자전관 스퍼터링 장치 및 방법 | |
Musil | Basic properties of low-pressure plasma | |
JPH07268624A (ja) | 放電装置 | |
JP3727679B2 (ja) | 薄膜の製造方法 | |
JPH02290966A (ja) | スパッタリング装置およびその制御方法 | |
JPH067548B2 (ja) | 薄膜形成方法 | |
JPH11199377A (ja) | 結晶性薄膜形成方法 | |
JP2001140068A (ja) | 光学薄膜の成膜方法および成膜装置 | |
JP2000171606A (ja) | 酸化チタン被覆プラスチックフィルムの製造方法および酸化チタン被覆プラスチックフィルム |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20040106 |
|
A313 | Final decision of rejection without a dissenting response from the applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A313 Effective date: 20040524 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20040622 |