JP2001352268A - High frequency switch module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a structure adaptable to high frequency switch modules miniaturized also in future. SOLUTION: The invention is a switch circuit for switching over a transmitter circuit and a receiver circuit. The switch circuit has diodes and transmission lines as main components, the transmission lines are composed of electrode patterns and electrode patterns of a laminate of dielectric layers, the diodes are disposed on the laminate, and the layers of the laminate are electrically connected through through-holes, thus forming a high frequency switch module. This module can be miniaturized and formed in one chip structure, preferably using a laminate structure. Thus it is effective for miniaturizing the apparatus in dual-band portable telephones, etc.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency composite component used in a high-frequency band such as a quasi-microwave band, and relates to a high-frequency switch module in which a transmitting / receiving system is handled by at least one antenna.

[0002]

2. Description of the Related Art In recent years, the spread of mobile phones has been remarkable, and the functions and services of mobile phones have been improved. Initially, it began with a single-band mobile phone that shared one antenna for one transmitting and receiving system. A high-frequency switch using a laminate for this purpose has also been developed (see, for example, JP-A-6-197040 and JP-A-9-36603). Subsequently, with the rapid increase in the number of subscribers, dual-band mobile phones and the like have appeared on the market. This dual-band mobile phone handles two transmission / reception systems while a normal mobile phone handles only one transmission / reception system. As a result, the user can select and use a convenient transmission / reception system. For example, in a dual-band mobile phone, the GSM1800 system (transmission TX.1
710-1785 MHz, RX RX. 1805-1880M
Hz), an EGSM900 system (TX TX 880-915 MHz, RX RX 925-
960 MHz). In such a mobile phone, a switch module configured using a demultiplexing circuit and a switch circuit is used as a signal path corresponding to each frequency and a switch for switching a plurality of frequencies (for example, Japanese Patent Application Laid-Open No. 9-36604). No., JP-A-11-55002).

[0003]

As shown in FIG. 9, a conventional high-frequency switch module has external connection terminals E on its side.
XT is provided. This is because when the high-frequency switch module is soldered to a printed circuit board, a fillet is formed to increase the solder strength. The external connection terminals include a transmission terminal TX, a reception terminal RX, a control terminal VC of a switch circuit, a ground terminal GND, and the like. However, when the external connection terminal EXT is provided on the side surface, the laminate M
There is also a possibility that a short circuit may occur due to a solder bridge with an electronic component DP such as a PIN diode that constitutes a switch circuit for antenna switching mounted on the L. This is because the distance between the two is too close. This has become remarkable in the trend of downsizing the high-frequency switch module.
The miniaturization trend has often caused not only a short circuit between the external connection terminal EXT and the electronic component DP but also a short circuit between the external connection terminals EXT. This has been a problem in the high-frequency switch module in which the tendency to miniaturize is an inevitable flow, significantly restricting the degree of freedom in design. Therefore, the present invention has been made in order to solve such a problem, and an object of the present invention is to provide a high-frequency switch module that is ultra-small, has no fear of a solder bridge, and has excellent electrical characteristics. is there.

[0004]

The gist of the present invention is as follows. (1) A switch circuit for switching between a transmission circuit and a reception circuit, wherein the switch circuit has a main configuration including a switch element and a laminate including an electrode pattern and a dielectric layer, and the switch element includes the laminate. A high-frequency switch module, which is disposed on the upper side, wherein all electrical connections of each layer of the laminate are made through holes. (2) A multi-band high-frequency switch module including a branching circuit that divides a plurality of transmission / reception systems having different pass bands into respective transmission / reception systems, and a switch circuit that switches a transmission circuit and a reception circuit in each of the transmission / reception systems. The demultiplexing circuit includes a transmission line and a capacitor, and the switch circuit mainly includes a switch element and a laminate including an electrode pattern and a dielectric layer, and includes at least one of the demultiplexing circuit and the switch circuit. The portion is constituted by an electrode pattern in a laminate composed of an electrode pattern and a dielectric layer, the switch element is disposed on the laminate, and all the electrical connections of the layers of the laminate are made through holes. A high-frequency switch module characterized by the above-mentioned. (3) In the high-frequency switch module according to (1) or (2), it is more preferable to use a diode or a transistor as the switch element. (4) In the high-frequency switch module according to (1) or (2), it is more preferable that a surface acoustic wave element is used for at least one of the bandpass filters of the reception system. (5) In the high-frequency switch module according to (1) or (2), a diode or a transistor is used as the switch element, and a surface acoustic wave element is used as at least one of the bandpass filters of the reception system. preferable. (6) In the high-frequency switch module according to (1) or (2), it is more preferable that an external connection terminal is formed by a solder ball on a bottom portion of the laminate. (7) In the high-frequency switch module according to the above (1) or (2), it is more preferable that a diode or a transistor is used as the switch element, and an external connection terminal is formed by a solder ball on the bottom of the laminate.

[0005] The present inventor anticipates the inevitable trend of miniaturization of the high-frequency switch module, and uses through holes (also called via holes and via holes) without using side electrodes.
It was foreseen that configuring a high-frequency switch module circuit with only this would be a future design concept. Furthermore, a design concept for converting a conventional pattern electrode into a BGA (ball grid array) was foreseen. In pattern printing, the width of a printable pattern is at most about 0.3 mm, which is considered to be a limit to be able to be manufactured accurately without blurring. If the pitch is smaller than that, it is expected that a grid array, especially a BGA (ball grid array) will be used. .

[0006]

DESCRIPTION OF THE PREFERRED EMBODIMENTS First, a high-frequency switch module according to the present invention will be described with reference to the drawings. FIG. 1 shows an equivalent circuit when applied to a single band, and FIG. 2 shows an equivalent circuit when applied to a dual band.

FIG. 1 shows a circuit of a high-frequency switch module used in a single-band mobile phone using a diode as a switch element according to an embodiment of the present invention. The function of the switch circuit is to electrically switch and separate the transmission circuit and the reception circuit at a high speed and connect them to the antenna via the antenna terminal. This switch circuit includes two diodes DP1 and DP2 and two transmission lines LP1 and LP2. The diode DP1 has an anode connected to the antenna terminal ANT, a cathode connected to the transmission TX, and a ground connected to the cathode. Is connected to the transmission line LP1. Usually, a lot-shaped or wire-shaped antenna is attached outside the high-frequency switch module,
It is connected to the antenna terminal ANT of the high-frequency switch module. However, as the demand for modularization further increases in the future, a high-frequency switch module in which a planar antenna is further compounded and incorporated may be considered. Although the present invention exemplifies a case where an antenna is externally mounted as an embodiment, the present invention can also be applied to a composite module including an antenna. A transmission line LP2 is connected between the antenna side and the reception RX, a diode DP2 having a cathode connected to the reception RX side is connected, and a capacitor CP6 is connected between the anode of the diode DP2 and the ground. , An inductor is connected therebetween, and is connected to the control circuit VC2. A voltage (for example, +3 V, +
When (2.6 V) is applied, the diodes DP2 and DP1 are turned on, and the transmission circuit TX and the antenna terminal ANT are connected. When no voltage is applied to the control circuit, the antenna terminal ANT and the receiving system RX are connected. In this way, one antenna can be shared by both the transmitting and receiving systems. The inductor LP connected to the terminal VC2 of the control circuit has a function of preventing the influence of the impedance on the power supply side even if the impedance on the power supply side fluctuates due to load fluctuation or the like by increasing the impedance when viewed from the power supply side. In this embodiment, since a diode is used for the switch circuit, it has an effect of excellent power durability at high frequencies and low loss. In this embodiment, a low-pass filter circuit is further inserted on the transmission TX circuit side. That is, the switch circuit S includes the transmission line LP3 and the capacitors CP3, CP4, and CP7.
It is inserted between the W diode DP1 and the transmission line LP1. When a low-pass filter is provided, harmonics generated from an amplifier (amplifier) or the like can be suppressed. FIG. 2 is a perspective view of an embodiment in which the single-band high-frequency switch module of FIG. 1 is mounted. DP is an electronic component in which a diode DP1 and a diode DP2 are packaged.
No side electrodes were used at all, and all electrical connections between layers of the laminate were made through holes. In FIG. 3, the external electrodes on the bottom surface are formed by a pattern printing method in the case of FIG. 2, but in this case, a BGA (ball
Grid array). Grid arrays other than BGA can also be used.

FIG. 4 shows an embodiment of a high-frequency switch module used in a dual band portable telephone using a diode as a switch element. This embodiment is a high-frequency switch module that handles a first transmission / reception system (EGSM900) and a second transmission / reception system (GSM1800) having different passbands, and switches between a transmission signal and a reception signal of the first transmission / reception system (EGSM900). A first switch circuit, a first low-pass filter circuit connected to a transmission line of the first switch circuit, and a second transmission / reception system (GSM1800)
A second switch circuit for switching between the transmission signal and the reception signal of the second switch circuit, and a second switch circuit connected to the transmission line of the second switch circuit.
And a demultiplexing circuit for demultiplexing the first transmitting / receiving system and the second transmitting / receiving system. The main part of the branching circuit portion connected to the antenna terminal ANT is two notch circuits. That is, the transmission line LF1 and the capacitor CF1 constitute one notch circuit, and the transmission line LF2 and the capacitor CF2 constitute another notch circuit. The capacitor CF3 connected to the ground is connected to one notch circuit. This capacitor CF3 is connected for the purpose of improving the low-pass filter characteristics of the demultiplexing characteristics. Another notch circuit includes a transmission line LF3 connected to the ground.
And the capacitor CF4 are connected in series. The transmission line LF3 and the capacitor CF4 are connected for the purpose of improving the high-pass filter characteristics of the demultiplexing characteristics. This demultiplexing circuit is, for example, a bandpass circuit other than the notch circuit,
A low-pass circuit, a high-pass circuit, or the like may be used, and these may be appropriately combined. Next, the first switch circuit will be described. The first switch circuit is the switch circuit on the upper side of FIG.
The transmission TX and the reception RX of the system are switched. This switch circuit SW includes two diodes DG1, DG2
And two transmission lines LG1 and LG2. The diode DG1 has an anode connected to the antenna terminal ANT side, a cathode connected to the transmission TX side, and a transmission line LG1 connected to the ground connected to the cathode side. I have. A transmission line LG2 is provided between the antenna side and the reception RX.
Is connected, a diode DG2 having a cathode connected to the receiving side is connected, and a capacitor CG6 is connected between the anode of the diode DG2 and the ground,
In the meantime, the inductor LG is connected and connected to the control circuit VC1. The low-pass filter circuit inserted on the transmission TX circuit side includes a transmission line LG3 and capacitors CG3, CG4, and CG7, and is inserted between the diode DG1 of the switch circuit SW and the transmission line LG1. Next, the second switch circuit will be described. The second switch circuit is a switch circuit on the lower side in FIG. 4 and switches between transmission TX and reception RX of the GSM1800 system. The switch circuit SW includes two diodes DP1 and DP2 and two transmission lines LP1 and L2.
P2, and the diode DP1 is connected to the antenna terminal ANT.
The transmission line L is connected to an anode on the transmission side, connected to a cathode on the transmission TX side, and connected to the ground on the cathode side.
P1 is connected. And the antenna side and the reception RX
A transmission line LP2 is connected therebetween, a diode DP2 having a cathode connected to the reception RX side thereof is connected, a capacitor CP6 is connected between the diode DP2 and the ground, and an inductor is connected therebetween. , And a control circuit VC2. The operation of the control circuit will be described. To enable the transmission of the EGSM900 system, a predetermined voltage is applied to the voltage terminal VC1. Similarly, when a predetermined voltage is applied to the voltage terminal VC2, GSM1800 transmission becomes effective. When receiving,
No voltage is applied to either of the voltage terminals VC1 and VC2. The low-pass filter circuit inserted on the transmission TX circuit side includes a transmission line LP3 and capacitors CP3 and C3.
P4 and CP7, which are inserted between the diode DP1 of the switch circuit SW and the transmission line LP1.

[0009] In the embodiment shown in FIG.
LP2 and RX (RX / EGSM900, RX / GS
M1800), a band pass filter using a surface acoustic wave element (SAW) represented by SG and SP is connected. By using the SAW filter, the size can be reduced, the filter can be electrically high in Q (the sharpness of the resonance circuit), and the size and the selectivity of the received signal can be improved. In FIG. 4, the function of the capacitor CGP is to lower the impedance between the connection point N1 of the transmission lines LG1 and LP1 and the ground at high frequencies.
The function of the resistor R in FIG. 4 is to control the value of the current flowing through the diode. In this embodiment, the EGSM900 system and G
Each control circuit VC1, VC1 of SM1800 series
2, the number of components can be reduced. In FIG. 4, a DC (direct current) cut capacitor is not required between the transmission line and the SAW filter. S
This is because the AW filter can cut off DC (direct current) due to its structure. As described above, the present invention has been described with respect to a single band and a dual band high frequency switch module.
Applicable to multiple bands of triple band or more.

FIG. 5 is a perspective view of a high-frequency switch module using a band pass filter using a surface acoustic wave element (SAW) represented by SG and SP. In Fig. 3, the circuit is composed only of through holes without using side electrodes,
The electrodes were concentrated on the bottom of the high-frequency switch module. S
AW filter (SG, SP), PIN diode (DG
1, DG2, DP1, DP2) and capacitors (CG1,
Except for CGP) and the resistor R, all were formed as printed circuits on the laminate ML. The outline of the arrangement is shown in FIG.
W filters SP, SG, a duplexer is arranged on the left side of FIG.
Via a dielectric layer on which a ground pattern is formed, a switch circuit and a low-pass filter thereunder, and further a dielectric layer on which a ground pattern is formed is sandwiched, a dielectric layer on which a capacitor pattern is printed, and The ground pattern was arranged at the bottom. In the mounting shown in FIG. 5, since the SAW filters (SG, SP) are arranged by providing steps in the stacked bodies ML1 and ML2, the height can be reduced.
Further miniaturization has become possible. The laminates ML1 and ML2 have an integral structure.

According to the present invention, as shown in FIG. 5, a high-frequency switch module can be miniaturized by arranging chip components on a laminated structure and the laminated body. The antenna terminal ANT, which is a common terminal of the plurality of transmission / reception systems, the transmission system terminal TX, and the reception system terminal RX of each transmission / reception system are terminals for high-frequency signals, and are called high-frequency terminals. The high-frequency terminals are formed on the back surface of the laminate as illustrated in FIG. 6, and are arranged so that the high-frequency terminals are not adjacent to each other. The symbol of each high-frequency terminal corresponds to the equivalent circuit of FIG. An antenna terminal ANT is a common terminal of the EGSM900 and the GSM1800. This is an input / output terminal for an antenna connected to the outside. In this embodiment, the example of the external mounting of the antenna is shown.
It is also conceivable to combine a planar antenna with the laminate.
The present invention can be applied to this case as well. In FIG. 6, TX, R
In X, the former is a transmitting terminal and the latter is a receiving terminal in both EGSM900 and GSM1800. VC1 and VC2 are:
A control terminal for switching a switch circuit from an external power supply via a control circuit and controlling transmission / reception switching. Between the high-frequency terminals, a ground terminal GND or a switch circuit control terminal (VC1, VC2)
Is arranged. It is preferable that at least one ground terminal GND is arranged between the high-frequency terminals. Thus, by preventing the high-frequency terminals from being adjacent to each other, and by arranging the ground terminals between the high-frequency terminals, the interference between the high-frequency terminals is suppressed,
Also, it is possible to reduce the loss.

It is preferable that the transmission system terminal and the reception system terminal are arranged so close to each other that the transmission system terminals and the reception system terminals are not adjacent to each other. In addition, it is preferable that the transmission system terminal and the reception system terminal are respectively arranged in different regions with respect to the center line of the laminate. Further, it is preferable that the transmission system terminal and the reception system terminal are arranged in line symmetry. With this configuration, in a device that handles a plurality of transmission / reception systems on which the high-frequency switch module is mounted, it is easy to connect to the transmission system circuit and the reception system circuit.

It is preferable that the common terminal and the transmission terminal and the reception terminal of each transmission / reception system are formed in different regions when the laminate is divided into two parts by a plane perpendicular to the mounting surface. Since the high-frequency switch module is disposed between the antenna and the transmission / reception circuit, this terminal arrangement allows the antenna and the high-frequency switch module and the transmission / reception circuit and the high-frequency switch module to be connected with the shortest line, and an extra loss Can be prevented.

In the present invention, it is preferable to arrange a metal case so as to surround the chip components arranged on the laminate. This is because not only the shielding effect, but also the vacuum suction is easy for the user of the high-frequency switch module in the case of the metal when soldering with the chip mounter. If a shielding effect is not required and it is only for forming a flat surface for supplying the chip mounter, mold the high-frequency switch module with a heat-resistant resin that can withstand the heat during reflow soldering, or coat the surface with a metal coating Is also good. The metal case can be fixed to the upper or lower surface of the laminate by soldering. Further, the high-frequency switch module of the present invention can be mounted on the mounter device by using the metal case. When a SAW (Surface Acoustic Wave) filter is used as a bandpass filter of a receiving system, a commercially available SAW filter that has already been packaged may be used, but a high-frequency switch module using a bare-chip or flip-chip SAW filter may be used. If it is packaged as a whole, it can still be made smaller and higher in performance.

The internal structure of the laminate will be described.
FIGS. 7 and 8 show print patterns of each layer. This embodiment is an example in which electrodes of each layer are printed on a dielectric sheet having a thickness of 50 μm (dimensions after integrally firing) and connected by through holes. In FIGS. 7 and 8, through holes are lands marked with “x”. A hole is formed in the X portion to form a through hole. Examples of the dielectric include an alumina-based glass ceramic low-temperature sintering material. FIG. 7 shows the eighth layer (8) every 50 μm from the top layer (1) of the laminate.
FIG. 8 shows the further lower layers from the ninth layer (9) to the eighteenth layer (18). DG1, C attached to the pattern
Symbols such as G1 and DG2 correspond to the equivalent circuit in FIG.

In this laminate, a green sheet made of a ceramic dielectric material that can be fired at a low temperature is prepared, and a conductive paste such as Ag, Pd, or Cu is printed on the green sheet to form a desired electrode pattern. Then, they are laminated as appropriate and fired integrally. The thickness of the sheet is generally in the range of 80 to 250 μm, and is controlled by a doctor blade method or the like depending on the intended use. After laminating a large sheet on which a large number of predetermined internal electrode patterns are formed, cutting each one into chip sizes, baking and forming terminal electrodes,
A dielectric laminate body is manufactured. The terminal electrode is usually Ag-
It has a three-layer structure of Ni-solder. The Ni layer can provide sufficient solder heat resistance, and the solder layer can provide sufficient solder wettability. Solder printing using a metal mask is performed on this dielectric laminate body, and then a PIN diode, a chip capacitor with a large capacitance value that could not be formed in the laminate body, and in some cases, a surface acoustic wave filter, etc. are mounted, Reflow soldering. Hereinafter, the configuration of each layer after firing will be described in order from the lowest layer. First, on the lowermost eighteenth layer (FIG. 8 (18)), a ground electrode GND is formed on almost the entire surface (for the GND electrode, a pattern is painted out for easy understanding). This ensures a stable ground. In particular, in this embodiment, a plurality of through-holes (six through-holes on each of the right and left sides in the case of FIG. 8 (18)) communicate with the back surface, and the wide and elongated GN shown in FIG.
D can be used for connection to an external circuit, and a stable ground effect can be obtained. On the seventeenth layer (FIG. 8 (17)), capacitor electrodes (CG6, CGL, CP6, CPL) are formed. These capacitors are used in a control circuit that controls the opening and closing of the diode of the switch circuit. Sixteenth
The GND electrode is also formed on almost the entire surface of the layer (FIG. 8 (16)). The 15th layer (FIG. 8 (15)) is bordered by the dashed line, and the GSM1800 series is on the near side and the EGSM90 is on the opposite side.
System 0 was arranged. As a result, the connection can be minimized, and the electrical characteristics can be improved. From the fifteenth layer (FIG. 8 (15)) to the eleventh layer (FIG. 8 (11)), the coils LG and LP of the control circuit inductances LG and LP were formed in the right half of the layers. The left half of the fifteenth layer (FIG. 8 (15)) has a low-pass filter capacitor pattern (CG3,
CG4, CP3, CP4). Layer 14 (FIG. 8)
(14)) In the right half, the above-mentioned inductance LG,
Low-pass filter capacitors CG7 and CP7 are arranged in the left half of the LP pattern. Layer 13 (FIG. 8)
(13)) In the right half, the above-mentioned inductance LG,
A transmission line of a switch circuit, LG1, LG2, LP2, LP3 is arranged on a part of the LP pattern on the left side. Since the switch circuit and the low-pass filter are arranged on the same plane, the matching between the two is further improved. The twelfth layer (FIG. 8)
(12)) has the above-mentioned inductance LG in the right half,
A part of the pattern of the LP, the transmission line of the switch circuit described above, a part of the pattern of the LG1, LG2, LP2, and LP3 on the left side, and the transmission lines LG1 and LP1 of the switch circuit.
Was placed. In the eleventh layer (FIG. 8 (11)), a part of the pattern of the above-described inductances LG and LP is provided on the right half, and the transmission lines of the above-described switch circuit, LG1, LG2,
A part of the pattern of LP2 and LP3 and a part of the pattern of the transmission lines LG1 and LP1 of the switch circuit are also arranged. On the tenth layer (FIG. 8 (10)), a part of the pattern of the transmission lines LG2 and LG3 of the EGSM900-based switch circuit is arranged. On the ninth layer (FIG. 8 (9)), the SAW which is a low-pass filter of the receiving system is located on the right side from the vertical line shown in the center.
Patterns for filters SG and SP were arranged. The pattern of the branching circuit was arranged on the left side of the vertical line shown in the center.

Each layer shown in FIG. 7 has a shape lacking the right side, unlike each layer shown in FIG. The broken lines in FIG. 7 indicate portions corresponding to the respective layers in FIG. 8 below. By such a combination of shapes, the stacked body ML having a step as shown in FIG.
1, ML2 are obtained, and the SAW filters SG, S
A compact high-frequency switch module equipped with P was obtained. The stacked body ML1 corresponds to FIG. 7, and the stacked body ML2 corresponds to FIG. An example of a method for forming the step will be described. First, the electrode patterns shown in FIGS. 7 and 8 are printed on green sheets having the same dimensions. In the case of the pattern of FIG. 7, only the left portion is printed, and there is no print pattern on the right portion. Next, each green sheet is laminated. After laminating the 18th layer (FIG. 8 (18)) and laminating the ninth layer (FIG. 8 (9)), the green sheet is reduced to a thickness of about 80 μm. A PET (polyethylene terephthalate) sheet or the like (referred to as a release sheet) which is sufficiently thin (about 20 μm) and which can be released from the green sheet is inserted into the portion indicated by the broken line in FIG. 7, and the eighth layer (FIG. )) To the first layer (FIG. 7)
(1)) to complete the laminate. Then, FIG.
When a cut is made from the vertical line portion to the top of the release sheet with a carbide blade and the release sheet and the green sheet laminate thereon are removed, the step portion shown in FIG. 5 can be easily formed. Hereinafter, the arrangement of each layer corresponding to the multilayer body ML1 will be described with reference to FIG. The eighth and seventh layers (FIGS. 7 (8) and (7)) include capacitors CF1, CF2 and C of the demultiplexing circuit.
Print the pattern of F4. The sixth layer (FIG. 7 (6)) is a dummy layer. Dummy layers are upper and lower layers (fifth and seventh layers).
Layer) is provided with a through hole for electrically connecting the electrode pattern formed on the layer, and no other electrode pattern is printed at all. In the laminate, the antenna terminal ANT and the transmission lines LF1, LF2, and LF3 are provided to keep the distance therebetween. Note that the antenna terminal ANT is not a dummy layer.
The layer thickness of the layer on which the transmission lines LF1, LF2, and LF3 are pattern-printed may be changed. When a dummy layer is used, all the layers can be formed by one sheet of, for example, 50 μm, which has the effect of improving productivity. The fifth and fourth layers (FIGS. 7 (5) and (4)) have transmission lines LF1 to LF3 constituting filters of the demultiplexing circuit. The third layer (FIG. 7)
(3)) is a transmission line L constituting a filter of the demultiplexing circuit.
F1 and LF2 were arranged. This allows the antenna to be arranged furthest away from the ground pattern GND (FIGS. 8 (16) and (18)) and maximizes the interval between the two, so that a sufficiently large inductance can be obtained. The first layer includes diodes DG1, DG2, and DP, which are components to be mounted on the multilayer body ML1.
1, DP2, capacitors CG1 and CGP, and a resistor R pattern. The second layer (FIG. 7 (2)) shows a pattern for connecting those mounted components to another pattern in the laminate.

As described above, an embodiment of the high-frequency switch module which uses a SAW filter as a bandpass filter of a receiving system and is provided with a step in the laminate to reduce the size has been described. The present invention is not limited to this, and a SAW filter may be mounted by providing a cavity (recess) in the laminate.

As described above, according to the present invention, not only in a single band but also in a multi-band mobile phone having a dual band or more, a duplexer for separating and synthesizing each signal, an antenna switch for switching a transmission signal and a reception signal, and Thus, an ultra-small high-frequency switch module having a low-pass filter for high-frequency elimination and a minimum element incorporated in a dielectric laminate and a switch element mounted on the element body has been realized.

[0020]

According to the present invention, it is possible to provide a high-frequency switch module which can cope with a miniaturization. According to the present invention, this high-frequency switch module can be made compact and one-chip, preferably by using a laminated structure. This is effective for miniaturization of devices such as dual-band mobile phones.

[Brief description of the drawings]

FIG. 1 is an equivalent circuit diagram of an embodiment according to the present invention.

FIG. 2 is a perspective view of one embodiment according to the present invention.

FIG. 3 is a perspective view of another embodiment according to the present invention.

FIG. 4 is an equivalent circuit diagram of another embodiment according to the present invention.

FIG. 5 is a perspective view of another embodiment according to the present invention.

FIG. 6 is a diagram showing an electrode arrangement on the bottom surface of the high-frequency switch module according to the present invention.

FIG. 7 is a diagram showing a pattern of each layer of the laminate of the equivalent circuit shown in FIG. 4;

FIG. 8 is a diagram showing a continuation of the pattern of each layer of the laminate.

FIG. 9 is a perspective view of a conventional high-frequency switch module.

[Explanation of symbols]

 LG1, LP1 transmission line LF2, LF3 transmission line LP2, LP3 transmission line TX transmission system terminal RX reception system terminal ANT antenna terminal SG, SP Surface acoustic wave filter

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 5J012 BA02 5K011 AA10 DA04 DA22 EA05 FA01 GA04 JA01 KA00

Claims (7)

[Claims] 1. A switch circuit for switching between a transmission circuit and a reception circuit, wherein the switch circuit has a main configuration including a switch element and a laminate including an electrode pattern and a dielectric layer, and the switch element includes A high-frequency switch module disposed on a laminate, wherein all electrical connections of each layer of the laminate are made through holes. 2. A multi-band high-frequency switch module having a demultiplexing circuit for dividing a plurality of transmission / reception systems having different passbands into transmission / reception systems, and a switch circuit for switching between a transmission circuit and a reception circuit in each of the transmission / reception systems. The demultiplexing circuit includes a transmission line and a capacitor, and the switch circuit has a main configuration including a switch element and a laminate including an electrode pattern and a dielectric layer. At least a part is configured by an electrode pattern in a laminate composed of an electrode pattern and a dielectric layer, the switch element is disposed on the laminate, and all the electrical connections of each layer of the laminate are formed by through holes. A high-frequency switch module characterized by performing: 3. The high-frequency switch module according to claim 1, wherein a diode or a transistor is used as the switch element. 4. The high-frequency switch module according to claim 1, wherein a surface acoustic wave element is used in at least one of the bandpass filters of the receiving system. 5. The device according to claim 1, wherein a diode or a transistor is used as the switch element, and a surface acoustic wave element is used for at least one of the bandpass filters of the receiving system.
Or the high-frequency switch module according to 2. 6. The high-frequency switch module according to claim 1, wherein an external connection terminal is formed by a solder ball on a bottom of the laminate. 7. The high-frequency switch module according to claim 1, wherein a diode or a transistor is used as the switch element, and an external connection terminal is formed by a solder ball on a bottom of the stacked body.