JP2001352041A - 光電流から集積回路電荷蓄積素子を保護する方法及び装置 - Google Patents

光電流から集積回路電荷蓄積素子を保護する方法及び装置

Info

Publication number
JP2001352041A
JP2001352041A JP2001089146A JP2001089146A JP2001352041A JP 2001352041 A JP2001352041 A JP 2001352041A JP 2001089146 A JP2001089146 A JP 2001089146A JP 2001089146 A JP2001089146 A JP 2001089146A JP 2001352041 A JP2001352041 A JP 2001352041A
Authority
JP
Japan
Prior art keywords
storage node
light
circuit
node circuit
photocurrent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001089146A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001352041A5 (enExample
Inventor
John J Corcoran
ジョン・ジェイ・コーコラン
Travis N Blalock
トラビス・エヌ・ブラロック
Voorde Paul J Vande
ポール・ジェイ・バンデ・ブールデ
Thomas A Knotts
トーマス・エイ・ノッツ
Neela B Gaddis
ニーラ・ビー・ガディス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of JP2001352041A publication Critical patent/JP2001352041A/ja
Publication of JP2001352041A5 publication Critical patent/JP2001352041A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures

Landscapes

  • Liquid Crystal (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP2001089146A 2000-03-30 2001-03-27 光電流から集積回路電荷蓄積素子を保護する方法及び装置 Pending JP2001352041A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/539,490 US6586283B2 (en) 2000-03-30 2000-03-30 Apparatus and method for protecting integrated circuit charge storage elements from photo-induced currents
US09/539490 2000-03-30

Publications (2)

Publication Number Publication Date
JP2001352041A true JP2001352041A (ja) 2001-12-21
JP2001352041A5 JP2001352041A5 (enExample) 2008-10-09

Family

ID=24151436

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001089146A Pending JP2001352041A (ja) 2000-03-30 2001-03-27 光電流から集積回路電荷蓄積素子を保護する方法及び装置

Country Status (4)

Country Link
US (1) US6586283B2 (enExample)
EP (1) EP1139417B1 (enExample)
JP (1) JP2001352041A (enExample)
DE (1) DE60127335T2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7194470B2 (en) 2002-06-19 2007-03-20 Matsushita Electric Industrial Co., Ltd. Data delivery management system
JP2024134489A (ja) * 2023-03-20 2024-10-03 聯華電子股▲ふん▼有限公司 半導体素子

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6552597B1 (en) * 2001-11-02 2003-04-22 Power Integrations, Inc. Integrated circuit with closely coupled high voltage output and offline transistor pair
US20060086974A1 (en) * 2004-10-26 2006-04-27 Power Integrations, Inc. Integrated circuit with multi-length power transistor segments
US7135748B2 (en) * 2004-10-26 2006-11-14 Power Integrations, Inc. Integrated circuit with multi-length output transistor segment

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60140862A (ja) * 1983-12-28 1985-07-25 Nec Corp 半導体記憶装置
JPH01309354A (ja) * 1988-06-07 1989-12-13 Nec Corp 半導体集積回路
JPH0316156A (ja) * 1989-06-14 1991-01-24 Nissan Motor Co Ltd 半導体装置
JPH04316362A (ja) * 1991-04-15 1992-11-06 Sony Corp 半導体装置
JPH10229182A (ja) * 1997-02-14 1998-08-25 Nikon Corp 半導体集積回路の容量

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279787A (en) * 1975-12-26 1977-07-05 Toshiba Corp Integrated circuit device
US4597805A (en) * 1979-10-11 1986-07-01 Texas Instruments Incorporated Making guard ring for reducing pattern sensitivity in MOS/LSI dynamic RAM
FR2481553A1 (fr) * 1980-04-23 1981-10-30 Thomson Csf Dispositif photosensible lu par transfert de charges et camera de television comportant un tel dispositif
JPS62117361A (ja) * 1985-11-15 1987-05-28 Mitsubishi Electric Corp 半導体メモリ装置
JPS62298105A (ja) * 1986-06-18 1987-12-25 Hitachi Micro Comput Eng Ltd 半導体集積回路装置
JP3075892B2 (ja) * 1993-07-09 2000-08-14 株式会社東芝 半導体装置
US5614744A (en) * 1995-08-04 1997-03-25 National Semiconductor Corporation CMOS-based, low leakage active pixel array with anti-blooming isolation
JP4140071B2 (ja) * 1997-11-04 2008-08-27 沖電気工業株式会社 半導体集積回路、半導体集積回路のレイアウト方法およびレイアウト装置
US6066883A (en) * 1998-03-16 2000-05-23 Xerox Corporation Guarding for a CMOS photosensor chip
US6218692B1 (en) * 1999-11-23 2001-04-17 Eastman Kodak Company Color active pixel sensor with electronic shuttering, anti-blooming and low cross talk

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60140862A (ja) * 1983-12-28 1985-07-25 Nec Corp 半導体記憶装置
JPH01309354A (ja) * 1988-06-07 1989-12-13 Nec Corp 半導体集積回路
JPH0316156A (ja) * 1989-06-14 1991-01-24 Nissan Motor Co Ltd 半導体装置
JPH04316362A (ja) * 1991-04-15 1992-11-06 Sony Corp 半導体装置
JPH10229182A (ja) * 1997-02-14 1998-08-25 Nikon Corp 半導体集積回路の容量

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7194470B2 (en) 2002-06-19 2007-03-20 Matsushita Electric Industrial Co., Ltd. Data delivery management system
JP2024134489A (ja) * 2023-03-20 2024-10-03 聯華電子股▲ふん▼有限公司 半導体素子
JP7623433B2 (ja) 2023-03-20 2025-01-28 聯華電子股▲ふん▼有限公司 半導体素子

Also Published As

Publication number Publication date
US6586283B2 (en) 2003-07-01
EP1139417B1 (en) 2007-03-21
EP1139417A2 (en) 2001-10-04
US20030075770A1 (en) 2003-04-24
DE60127335T2 (de) 2007-12-20
DE60127335D1 (de) 2007-05-03
EP1139417A3 (en) 2004-07-14

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