JP2001319915A5 - - Google Patents

Info

Publication number

JP2001319915A5

JP2001319915A5 JP2000174442A JP2000174442A JP2001319915A5 JP 2001319915 A5 JP2001319915 A5 JP 2001319915A5 JP 2000174442 A JP2000174442 A JP 2000174442A JP 2000174442 A JP2000174442 A JP 2000174442A JP 2001319915 A5 JP2001319915 A5 JP 2001319915A5

Authority

JP

Japan

Prior art keywords

wafer

plating

processing

liquid

liquid processing

Prior art date

2000-05-08

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Pending

Links

• Espacenet
• Global Dossier
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• 238000012545 processing Methods 0.000 description 340
• 239000007788 liquid Substances 0.000 description 213
• 238000007747 plating Methods 0.000 description 187
• 235000012431 wafers Nutrition 0.000 description 161
• 238000004140 cleaning Methods 0.000 description 78
• 238000000034 method Methods 0.000 description 47
• 239000000758 substrate Substances 0.000 description 36
• 238000012546 transfer Methods 0.000 description 23
• XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
• 238000010438 heat treatment Methods 0.000 description 14
• 230000032258 transport Effects 0.000 description 13
• 239000003595 mist Substances 0.000 description 12
• 238000000137 annealing Methods 0.000 description 10
• 239000007789 gas Substances 0.000 description 10
• 230000002093 peripheral effect Effects 0.000 description 9
• 239000004065 semiconductor Substances 0.000 description 9
• 238000010586 diagram Methods 0.000 description 8
• 238000012423 maintenance Methods 0.000 description 7
• 238000001035 drying Methods 0.000 description 6
• 238000011109 contamination Methods 0.000 description 5
• 230000003028 elevating effect Effects 0.000 description 5
• 238000004519 manufacturing process Methods 0.000 description 5
• 238000009792 diffusion process Methods 0.000 description 4
• 239000002184 metal Substances 0.000 description 4
• 229910052751 metal Inorganic materials 0.000 description 4
• 239000000203 mixture Substances 0.000 description 4
• 239000000126 substance Substances 0.000 description 4
• RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
• 238000013459 approach Methods 0.000 description 3
• 229910052802 copper Inorganic materials 0.000 description 3
• 239000010949 copper Substances 0.000 description 3
• 239000010419 fine particle Substances 0.000 description 3
• 238000003672 processing method Methods 0.000 description 3
• 239000011347 resin Substances 0.000 description 3
• 229920005989 resin Polymers 0.000 description 3
• IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
• KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
• 238000005260 corrosion Methods 0.000 description 2
• 230000007797 corrosion Effects 0.000 description 2
• 229910001873 dinitrogen Inorganic materials 0.000 description 2
• 239000000428 dust Substances 0.000 description 2
• 238000009713 electroplating Methods 0.000 description 2
• 230000001965 increasing effect Effects 0.000 description 2
• 239000004973 liquid crystal related substance Substances 0.000 description 2
• 239000007791 liquid phase Substances 0.000 description 2
• 239000000463 material Substances 0.000 description 2
• 229910021645 metal ion Inorganic materials 0.000 description 2
• 239000002245 particle Substances 0.000 description 2
• 239000002253 acid Substances 0.000 description 1
• 150000007513 acids Chemical class 0.000 description 1
• 239000003513 alkali Substances 0.000 description 1
• 230000001174 ascending effect Effects 0.000 description 1
• 230000015572 biosynthetic process Effects 0.000 description 1
• 229910000365 copper sulfate Inorganic materials 0.000 description 1
• ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
• 230000007547 defect Effects 0.000 description 1
• 238000007599 discharging Methods 0.000 description 1
• 230000000694 effects Effects 0.000 description 1
• 239000011521 glass Substances 0.000 description 1
• 239000011261 inert gas Substances 0.000 description 1
• 238000007689 inspection Methods 0.000 description 1
• 150000002500 ions Chemical class 0.000 description 1
• 229910001120 nichrome Inorganic materials 0.000 description 1
• 239000012071 phase Substances 0.000 description 1
• 238000012805 post-processing Methods 0.000 description 1
• 238000007781 pre-processing Methods 0.000 description 1
• 238000003825 pressing Methods 0.000 description 1
• 238000004544 sputter deposition Methods 0.000 description 1
• 238000004381 surface treatment Methods 0.000 description 1
• HOWHQWFXSLOJEF-MGZLOUMQSA-N systemin Chemical compound NCCCC[C@H](N)C(=O)N[C@@H](CCSC)C(=O)N[C@@H](CCC(N)=O)C(=O)N[C@@H]([C@@H](C)O)C(=O)N[C@@H](CC(O)=O)C(=O)OC(=O)[C@@H]1CCCN1C(=O)[C@H]1N(C(=O)[C@H](CC(O)=O)NC(=O)[C@H](CCCN=C(N)N)NC(=O)[C@H](CCCCN)NC(=O)[C@H](CO)NC(=O)[C@H]2N(CCC2)C(=O)[C@H]2N(CCC2)C(=O)[C@H](CCCCN)NC(=O)[C@H](CO)NC(=O)[C@H](CCC(N)=O)NC(=O)[C@@H](NC(=O)[C@H](C)N)C(C)C)CCC1 HOWHQWFXSLOJEF-MGZLOUMQSA-N 0.000 description 1
• 108010050014 systemin Proteins 0.000 description 1
• 238000011144 upstream manufacturing Methods 0.000 description 1
• 238000009423 ventilation Methods 0.000 description 1
• 239000002699 waste material Substances 0.000 description 1