JP2001311964A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JP2001311964A JP2001311964A JP2000128558A JP2000128558A JP2001311964A JP 2001311964 A JP2001311964 A JP 2001311964A JP 2000128558 A JP2000128558 A JP 2000128558A JP 2000128558 A JP2000128558 A JP 2000128558A JP 2001311964 A JP2001311964 A JP 2001311964A
- Authority
- JP
- Japan
- Prior art keywords
- light
- conductive film
- film
- electrode
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 104
- 239000003990 capacitor Substances 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 35
- 239000000758 substrate Substances 0.000 abstract description 121
- 239000010408 film Substances 0.000 description 260
- 239000010410 layer Substances 0.000 description 122
- 239000012535 impurity Substances 0.000 description 53
- 239000004973 liquid crystal related substance Substances 0.000 description 47
- 239000011159 matrix material Substances 0.000 description 40
- 238000005530 etching Methods 0.000 description 34
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 24
- 239000011229 interlayer Substances 0.000 description 24
- 238000003860 storage Methods 0.000 description 22
- 239000000463 material Substances 0.000 description 19
- 238000010586 diagram Methods 0.000 description 18
- 238000000059 patterning Methods 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 230000003287 optical effect Effects 0.000 description 15
- 230000008569 process Effects 0.000 description 13
- 239000011787 zinc oxide Substances 0.000 description 12
- 239000000956 alloy Substances 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000000460 chlorine Substances 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 238000000137 annealing Methods 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 6
- 230000003197 catalytic effect Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical group [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 238000005401 electroluminescence Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910000846 In alloy Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000005247 gettering Methods 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 101000592773 Halobacterium salinarum (strain ATCC 700922 / JCM 11081 / NRC-1) 50S ribosomal protein L22 Proteins 0.000 description 1
- 101000988591 Homo sapiens Minor histocompatibility antigen H13 Proteins 0.000 description 1
- 101000650817 Homo sapiens Semaphorin-4D Proteins 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 102100029083 Minor histocompatibility antigen H13 Human genes 0.000 description 1
- 102100027744 Semaphorin-4D Human genes 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- 229910004529 TaF 5 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000128558A JP2001311964A (ja) | 2000-04-27 | 2000-04-27 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000128558A JP2001311964A (ja) | 2000-04-27 | 2000-04-27 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010129219A Division JP5873623B2 (ja) | 2010-06-04 | 2010-06-04 | 表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001311964A true JP2001311964A (ja) | 2001-11-09 |
| JP2001311964A5 JP2001311964A5 (enExample) | 2007-06-21 |
Family
ID=18637980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000128558A Withdrawn JP2001311964A (ja) | 2000-04-27 | 2000-04-27 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001311964A (enExample) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100598035B1 (ko) * | 2004-02-24 | 2006-07-07 | 삼성전자주식회사 | 전하 전송 이미지 소자의 제조 방법 |
| US7161193B2 (en) | 2002-10-31 | 2007-01-09 | Seiko Epson Corporation | Electro-optical device and electronic apparatus |
| JP2007017619A (ja) * | 2005-07-06 | 2007-01-25 | Hitachi Displays Ltd | 表示装置 |
| JP2010139918A (ja) * | 2008-12-15 | 2010-06-24 | Epson Imaging Devices Corp | 液晶表示パネル |
| JP2010224090A (ja) * | 2009-03-23 | 2010-10-07 | Sony Corp | 液晶表示装置および電子機器 |
| JP2010266869A (ja) * | 2010-06-04 | 2010-11-25 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
| JP2011100170A (ja) * | 2011-02-25 | 2011-05-19 | Hitachi Displays Ltd | 表示装置 |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0267524A (ja) * | 1988-09-01 | 1990-03-07 | Sharp Corp | マトリックス型表示装置 |
| JPH03146927A (ja) * | 1989-11-02 | 1991-06-21 | Casio Comput Co Ltd | Ｔｆｔアクティブマトリックス型液晶表示パネルおよびその製造方法 |
| JPH05203994A (ja) * | 1991-09-24 | 1993-08-13 | Toshiba Corp | 液晶表示装置 |
| JPH07159771A (ja) * | 1993-12-06 | 1995-06-23 | Hitachi Ltd | カラー液晶表示装置 |
| JPH0829778A (ja) * | 1994-07-15 | 1996-02-02 | Casio Comput Co Ltd | カラー液晶表示素子 |
| JPH08234212A (ja) * | 1995-02-28 | 1996-09-13 | Casio Comput Co Ltd | 液晶表示素子 |
| JPH09325358A (ja) * | 1996-06-04 | 1997-12-16 | Sharp Corp | 液晶表示装置およびその製造方法 |
| JPH1082996A (ja) * | 1996-09-09 | 1998-03-31 | Advanced Display:Kk | 液晶表示パネル |
| JP2000029074A (ja) * | 1991-11-29 | 2000-01-28 | Seiko Epson Corp | 液晶表示装置 |
-
2000
- 2000-04-27 JP JP2000128558A patent/JP2001311964A/ja not_active Withdrawn
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0267524A (ja) * | 1988-09-01 | 1990-03-07 | Sharp Corp | マトリックス型表示装置 |
| JPH03146927A (ja) * | 1989-11-02 | 1991-06-21 | Casio Comput Co Ltd | Ｔｆｔアクティブマトリックス型液晶表示パネルおよびその製造方法 |
| JPH05203994A (ja) * | 1991-09-24 | 1993-08-13 | Toshiba Corp | 液晶表示装置 |
| JP2000029074A (ja) * | 1991-11-29 | 2000-01-28 | Seiko Epson Corp | 液晶表示装置 |
| JPH07159771A (ja) * | 1993-12-06 | 1995-06-23 | Hitachi Ltd | カラー液晶表示装置 |
| JPH0829778A (ja) * | 1994-07-15 | 1996-02-02 | Casio Comput Co Ltd | カラー液晶表示素子 |
| JPH08234212A (ja) * | 1995-02-28 | 1996-09-13 | Casio Comput Co Ltd | 液晶表示素子 |
| JPH09325358A (ja) * | 1996-06-04 | 1997-12-16 | Sharp Corp | 液晶表示装置およびその製造方法 |
| JPH1082996A (ja) * | 1996-09-09 | 1998-03-31 | Advanced Display:Kk | 液晶表示パネル |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7161193B2 (en) | 2002-10-31 | 2007-01-09 | Seiko Epson Corporation | Electro-optical device and electronic apparatus |
| US7268843B2 (en) | 2002-10-31 | 2007-09-11 | Seiko Epson Corporation | Liquid crystal display with capacitive light shield between data line and pixel electrode |
| KR100598035B1 (ko) * | 2004-02-24 | 2006-07-07 | 삼성전자주식회사 | 전하 전송 이미지 소자의 제조 방법 |
| JP2007017619A (ja) * | 2005-07-06 | 2007-01-25 | Hitachi Displays Ltd | 表示装置 |
| JP2010139918A (ja) * | 2008-12-15 | 2010-06-24 | Epson Imaging Devices Corp | 液晶表示パネル |
| JP2010224090A (ja) * | 2009-03-23 | 2010-10-07 | Sony Corp | 液晶表示装置および電子機器 |
| JP2010266869A (ja) * | 2010-06-04 | 2010-11-25 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
| JP2011100170A (ja) * | 2011-02-25 | 2011-05-19 | Hitachi Displays Ltd | 表示装置 |
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