JP2001284342A - 電気光学装置の作製方法 - Google Patents
電気光学装置の作製方法Info
- Publication number
- JP2001284342A JP2001284342A JP2001013099A JP2001013099A JP2001284342A JP 2001284342 A JP2001284342 A JP 2001284342A JP 2001013099 A JP2001013099 A JP 2001013099A JP 2001013099 A JP2001013099 A JP 2001013099A JP 2001284342 A JP2001284342 A JP 2001284342A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thickness
- flattening
- wiring
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 238000000034 method Methods 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 25
- 239000004925 Acrylic resin Substances 0.000 claims description 11
- 229920000178 Acrylic resin Polymers 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000011347 resin Substances 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 10
- 238000004528 spin coating Methods 0.000 claims description 10
- 229920001721 polyimide Polymers 0.000 claims description 7
- 239000009719 polyimide resin Substances 0.000 claims description 5
- -1 siloxane structure Chemical group 0.000 claims description 5
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 33
- 239000010408 film Substances 0.000 description 191
- 239000000758 substrate Substances 0.000 description 40
- 239000010410 layer Substances 0.000 description 39
- 238000005401 electroluminescence Methods 0.000 description 31
- 239000012535 impurity Substances 0.000 description 31
- 239000011159 matrix material Substances 0.000 description 20
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 description 11
- 238000000137 annealing Methods 0.000 description 11
- 239000011521 glass Substances 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 11
- 239000011229 interlayer Substances 0.000 description 11
- 229910052698 phosphorus Inorganic materials 0.000 description 11
- 239000011574 phosphorus Substances 0.000 description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 9
- 229910052796 boron Inorganic materials 0.000 description 9
- 229910021419 crystalline silicon Inorganic materials 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 238000002161 passivation Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
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- 229910052760 oxygen Inorganic materials 0.000 description 5
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- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
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- 239000000945 filler Substances 0.000 description 4
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000003197 catalytic effect Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
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- 230000003287 optical effect Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
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- 229920002620 polyvinyl fluoride Polymers 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000009751 slip forming Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000005041 Mylar™ Substances 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000002966 varnish Substances 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001013099A JP2001284342A (ja) | 2000-01-25 | 2001-01-22 | 電気光学装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000-16309 | 2000-01-25 | ||
| JP2000016309 | 2000-01-25 | ||
| JP2001013099A JP2001284342A (ja) | 2000-01-25 | 2001-01-22 | 電気光学装置の作製方法 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004315626A Division JP2005148728A (ja) | 2000-01-25 | 2004-10-29 | 集積回路 |
| JP2004315625A Division JP4963158B2 (ja) | 2000-01-25 | 2004-10-29 | 表示装置の作製方法、電気光学装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001284342A true JP2001284342A (ja) | 2001-10-12 |
| JP2001284342A5 JP2001284342A5 (enExample) | 2005-07-07 |
Family
ID=26584138
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001013099A Withdrawn JP2001284342A (ja) | 2000-01-25 | 2001-01-22 | 電気光学装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001284342A (enExample) |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004214683A (ja) * | 2002-12-31 | 2004-07-29 | Samsung Electronics Co Ltd | 可撓性基板上に保護キャップを具備する薄膜半導体素子、これを利用する電子装置及びその製造方法 |
| JP2005223034A (ja) * | 2004-02-04 | 2005-08-18 | Sony Corp | 配線構造及びパネル型表示装置 |
| US7160768B2 (en) | 2003-07-10 | 2007-01-09 | Seiko Epson Corporation | Method of manufacturing electronic device and method of manufacturing semiconductor device |
| JP2007242895A (ja) * | 2006-03-08 | 2007-09-20 | Mitsubishi Electric Corp | 薄膜トランジスタ装置及びその製造方法 |
| US7282736B2 (en) | 2002-12-10 | 2007-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting structure including an exposed electrode overlapping a wiring or conductive layer |
| US7436032B2 (en) | 2003-12-19 | 2008-10-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor integrated circuit comprising read only memory, semiconductor device comprising the semiconductor integrated circuit, and manufacturing method of the semiconductor integrated circuit |
| JP2009003434A (ja) * | 2007-05-18 | 2009-01-08 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| US7566010B2 (en) | 2003-12-26 | 2009-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Securities, chip mounting product, and manufacturing method thereof |
| US7566640B2 (en) | 2003-12-15 | 2009-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film integrated circuit device, noncontact thin film integrated circuit device and method for manufacturing the same, and idtag and coin including the noncontact thin film integrated circuit device |
| US7632721B2 (en) | 2004-02-06 | 2009-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film integrated circuit, and element substrate |
| JP2014063808A (ja) * | 2012-09-20 | 2014-04-10 | Seiko Epson Corp | 光電変換装置および医療機器 |
| US8830436B2 (en) | 2010-12-24 | 2014-09-09 | Japan Display West Inc. | Pixel structure, display device, and electronic apparatus |
| US9224759B2 (en) | 2010-12-20 | 2015-12-29 | Japan Display Inc. | Pixel array substrate structure, method of manufacturing pixel array substrate structure, display device, and electronic apparatus |
| JP2018503118A (ja) * | 2014-12-19 | 2018-02-01 | 深▲せん▼市華星光電技術有限公司Ｓｈｅｎｚｈｅｎ Ｃｈｉｎａ Ｓｔａｒ Ｏｐｔｏｅｌｅｃｔｒｏｎｉｃｓ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．， Ｌｔｄ． | 液晶表示パネルの製造方法 |
| KR20180021286A (ko) * | 2016-08-18 | 2018-03-02 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조방법 |
| KR20180025431A (ko) * | 2016-08-30 | 2018-03-09 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| CN111146215A (zh) * | 2020-02-21 | 2020-05-12 | 京东方科技集团股份有限公司 | 一种阵列基板、其制作方法及显示装置 |
| CN111725281A (zh) * | 2020-06-12 | 2020-09-29 | 维沃移动通信有限公司 | 显示模组及电子设备 |
| JP2021005113A (ja) * | 2005-12-05 | 2021-01-14 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
-
2001
- 2001-01-22 JP JP2001013099A patent/JP2001284342A/ja not_active Withdrawn
Cited By (47)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7282736B2 (en) | 2002-12-10 | 2007-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting structure including an exposed electrode overlapping a wiring or conductive layer |
| US7491562B2 (en) | 2002-12-10 | 2009-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
| JP2004214683A (ja) * | 2002-12-31 | 2004-07-29 | Samsung Electronics Co Ltd | 可撓性基板上に保護キャップを具備する薄膜半導体素子、これを利用する電子装置及びその製造方法 |
| US7160768B2 (en) | 2003-07-10 | 2007-01-09 | Seiko Epson Corporation | Method of manufacturing electronic device and method of manufacturing semiconductor device |
| US7566640B2 (en) | 2003-12-15 | 2009-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film integrated circuit device, noncontact thin film integrated circuit device and method for manufacturing the same, and idtag and coin including the noncontact thin film integrated circuit device |
| US8202238B2 (en) | 2003-12-15 | 2012-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film integrated circuit device, noncontact thin film integrated circuit device and method for manufacturing the same, and idtag and coin including the noncontact thin film integrated circuit device |
| US7436032B2 (en) | 2003-12-19 | 2008-10-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor integrated circuit comprising read only memory, semiconductor device comprising the semiconductor integrated circuit, and manufacturing method of the semiconductor integrated circuit |
| US7842561B2 (en) | 2003-12-19 | 2010-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor integrated circuit, semiconductor device, and manufacturing method of the semiconductor integrated circuit |
| US8662402B2 (en) | 2003-12-26 | 2014-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Securities, chip mounting product, and manufacturing method thereof |
| US7566010B2 (en) | 2003-12-26 | 2009-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Securities, chip mounting product, and manufacturing method thereof |
| US8083153B2 (en) | 2003-12-26 | 2011-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Securities, chip mounting product, and manufacturing method thereof |
| US7857229B2 (en) | 2003-12-26 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Securities, chip mounting product, and manufacturing method thereof |
| JP2005223034A (ja) * | 2004-02-04 | 2005-08-18 | Sony Corp | 配線構造及びパネル型表示装置 |
| US8685835B2 (en) | 2004-02-06 | 2014-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film integrated circuit, and element substrate |
| US7968386B2 (en) | 2004-02-06 | 2011-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film integrated circuit, and element substrate |
| US7632721B2 (en) | 2004-02-06 | 2009-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film integrated circuit, and element substrate |
| JP7522266B2 (ja) | 2005-12-05 | 2024-07-24 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| US11592719B2 (en) | 2005-12-05 | 2023-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| JP7554378B2 (ja) | 2005-12-05 | 2024-09-19 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| US11899329B2 (en) | 2005-12-05 | 2024-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| JP2023113972A (ja) * | 2005-12-05 | 2023-08-16 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
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