JP2001284342A - 電気光学装置の作製方法 - Google Patents

電気光学装置の作製方法

Info

Publication number
JP2001284342A
JP2001284342A JP2001013099A JP2001013099A JP2001284342A JP 2001284342 A JP2001284342 A JP 2001284342A JP 2001013099 A JP2001013099 A JP 2001013099A JP 2001013099 A JP2001013099 A JP 2001013099A JP 2001284342 A JP2001284342 A JP 2001284342A
Authority
JP
Japan
Prior art keywords
film
thickness
flattening
wiring
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001013099A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001284342A5 (enExample
Inventor
Ritsukiko Nagao
里築子 長尾
Tomohito Murakami
智史 村上
Misako Nakazawa
美佐子 仲沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001013099A priority Critical patent/JP2001284342A/ja
Publication of JP2001284342A publication Critical patent/JP2001284342A/ja
Publication of JP2001284342A5 publication Critical patent/JP2001284342A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
JP2001013099A 2000-01-25 2001-01-22 電気光学装置の作製方法 Withdrawn JP2001284342A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001013099A JP2001284342A (ja) 2000-01-25 2001-01-22 電気光学装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-16309 2000-01-25
JP2000016309 2000-01-25
JP2001013099A JP2001284342A (ja) 2000-01-25 2001-01-22 電気光学装置の作製方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2004315626A Division JP2005148728A (ja) 2000-01-25 2004-10-29 集積回路
JP2004315625A Division JP4963158B2 (ja) 2000-01-25 2004-10-29 表示装置の作製方法、電気光学装置の作製方法

Publications (2)

Publication Number Publication Date
JP2001284342A true JP2001284342A (ja) 2001-10-12
JP2001284342A5 JP2001284342A5 (enExample) 2005-07-07

Family

ID=26584138

Family Applications (1)

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JP2001013099A Withdrawn JP2001284342A (ja) 2000-01-25 2001-01-22 電気光学装置の作製方法

Country Status (1)

Country Link
JP (1) JP2001284342A (enExample)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004214683A (ja) * 2002-12-31 2004-07-29 Samsung Electronics Co Ltd 可撓性基板上に保護キャップを具備する薄膜半導体素子、これを利用する電子装置及びその製造方法
JP2005223034A (ja) * 2004-02-04 2005-08-18 Sony Corp 配線構造及びパネル型表示装置
US7160768B2 (en) 2003-07-10 2007-01-09 Seiko Epson Corporation Method of manufacturing electronic device and method of manufacturing semiconductor device
JP2007242895A (ja) * 2006-03-08 2007-09-20 Mitsubishi Electric Corp 薄膜トランジスタ装置及びその製造方法
US7282736B2 (en) 2002-12-10 2007-10-16 Semiconductor Energy Laboratory Co., Ltd. Light emitting structure including an exposed electrode overlapping a wiring or conductive layer
US7436032B2 (en) 2003-12-19 2008-10-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit comprising read only memory, semiconductor device comprising the semiconductor integrated circuit, and manufacturing method of the semiconductor integrated circuit
JP2009003434A (ja) * 2007-05-18 2009-01-08 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US7566640B2 (en) 2003-12-15 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit device, noncontact thin film integrated circuit device and method for manufacturing the same, and idtag and coin including the noncontact thin film integrated circuit device
US7566010B2 (en) 2003-12-26 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Securities, chip mounting product, and manufacturing method thereof
US7632721B2 (en) 2004-02-06 2009-12-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit, and element substrate
JP2014063808A (ja) * 2012-09-20 2014-04-10 Seiko Epson Corp 光電変換装置および医療機器
US8830436B2 (en) 2010-12-24 2014-09-09 Japan Display West Inc. Pixel structure, display device, and electronic apparatus
US9224759B2 (en) 2010-12-20 2015-12-29 Japan Display Inc. Pixel array substrate structure, method of manufacturing pixel array substrate structure, display device, and electronic apparatus
JP2018503118A (ja) * 2014-12-19 2018-02-01 深▲せん▼市華星光電技術有限公司Ｓｈｅｎｚｈｅｎ Ｃｈｉｎａ Ｓｔａｒ Ｏｐｔｏｅｌｅｃｔｒｏｎｉｃｓ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．， Ｌｔｄ． 液晶表示パネルの製造方法
KR20180021286A (ko) * 2016-08-18 2018-03-02 삼성디스플레이 주식회사 표시 장치 및 그 제조방법
KR20180025431A (ko) * 2016-08-30 2018-03-09 삼성디스플레이 주식회사 유기 발광 표시 장치
CN111146215A (zh) * 2020-02-21 2020-05-12 京东方科技集团股份有限公司 一种阵列基板、其制作方法及显示装置
CN111725281A (zh) * 2020-06-12 2020-09-29 维沃移动通信有限公司 显示模组及电子设备
JP2021005113A (ja) * 2005-12-05 2021-01-14 株式会社半導体エネルギー研究所 液晶表示装置

Cited By (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7282736B2 (en) 2002-12-10 2007-10-16 Semiconductor Energy Laboratory Co., Ltd. Light emitting structure including an exposed electrode overlapping a wiring or conductive layer
US7491562B2 (en) 2002-12-10 2009-02-17 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
JP2004214683A (ja) * 2002-12-31 2004-07-29 Samsung Electronics Co Ltd 可撓性基板上に保護キャップを具備する薄膜半導体素子、これを利用する電子装置及びその製造方法
US7160768B2 (en) 2003-07-10 2007-01-09 Seiko Epson Corporation Method of manufacturing electronic device and method of manufacturing semiconductor device
US7566640B2 (en) 2003-12-15 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit device, noncontact thin film integrated circuit device and method for manufacturing the same, and idtag and coin including the noncontact thin film integrated circuit device
US8202238B2 (en) 2003-12-15 2012-06-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit device, noncontact thin film integrated circuit device and method for manufacturing the same, and idtag and coin including the noncontact thin film integrated circuit device
US7842561B2 (en) 2003-12-19 2010-11-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit, semiconductor device, and manufacturing method of the semiconductor integrated circuit
US7436032B2 (en) 2003-12-19 2008-10-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit comprising read only memory, semiconductor device comprising the semiconductor integrated circuit, and manufacturing method of the semiconductor integrated circuit
US8662402B2 (en) 2003-12-26 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Securities, chip mounting product, and manufacturing method thereof
US7566010B2 (en) 2003-12-26 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Securities, chip mounting product, and manufacturing method thereof
US8083153B2 (en) 2003-12-26 2011-12-27 Semiconductor Energy Laboratory Co., Ltd. Securities, chip mounting product, and manufacturing method thereof
US7857229B2 (en) 2003-12-26 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Securities, chip mounting product, and manufacturing method thereof
JP2005223034A (ja) * 2004-02-04 2005-08-18 Sony Corp 配線構造及びパネル型表示装置
US8685835B2 (en) 2004-02-06 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit, and element substrate
US7968386B2 (en) 2004-02-06 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit, and element substrate
US7632721B2 (en) 2004-02-06 2009-12-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit, and element substrate
JP7522266B2 (ja) 2005-12-05 2024-07-24 株式会社半導体エネルギー研究所 液晶表示装置
US11592719B2 (en) 2005-12-05 2023-02-28 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP7554378B2 (ja) 2005-12-05 2024-09-19 株式会社半導体エネルギー研究所 液晶表示装置
US11899329B2 (en) 2005-12-05 2024-02-13 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP2023113972A (ja) * 2005-12-05 2023-08-16 株式会社半導体エネルギー研究所 液晶表示装置
JP2024111250A (ja) * 2005-12-05 2024-08-16 株式会社半導体エネルギー研究所 液晶表示装置
JP7008114B2 (ja) 2005-12-05 2022-01-25 株式会社半導体エネルギー研究所 液晶表示装置
US12216372B2 (en) 2005-12-05 2025-02-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP2024156028A (ja) * 2005-12-05 2024-10-31 株式会社半導体エネルギー研究所 液晶表示装置
US11126053B2 (en) 2005-12-05 2021-09-21 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US11048135B2 (en) 2005-12-05 2021-06-29 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP2024133309A (ja) * 2005-12-05 2024-10-01 株式会社半導体エネルギー研究所 液晶表示装置
JP7557103B1 (ja) 2005-12-05 2024-09-26 株式会社半導体エネルギー研究所 液晶表示装置
JP2021005113A (ja) * 2005-12-05 2021-01-14 株式会社半導体エネルギー研究所 液晶表示装置
JP2007242895A (ja) * 2006-03-08 2007-09-20 Mitsubishi Electric Corp 薄膜トランジスタ装置及びその製造方法
US8471272B2 (en) 2007-05-18 2013-06-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a display portion
JP2009003434A (ja) * 2007-05-18 2009-01-08 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US10527893B2 (en) 2010-12-20 2020-01-07 Japan Display Inc. Pixel array substrate structure, method of manufacturing pixel array substrate structure, display device, and electronic apparatus
US10048548B2 (en) 2010-12-20 2018-08-14 Japan Display Inc. Pixel array substrate structure, method of manufacturing pixel array substrate structure, display device, and electronic apparatus
US9224759B2 (en) 2010-12-20 2015-12-29 Japan Display Inc. Pixel array substrate structure, method of manufacturing pixel array substrate structure, display device, and electronic apparatus
US8830436B2 (en) 2010-12-24 2014-09-09 Japan Display West Inc. Pixel structure, display device, and electronic apparatus
JP2014063808A (ja) * 2012-09-20 2014-04-10 Seiko Epson Corp 光電変換装置および医療機器
JP2018503118A (ja) * 2014-12-19 2018-02-01 深▲せん▼市華星光電技術有限公司Ｓｈｅｎｚｈｅｎ Ｃｈｉｎａ Ｓｔａｒ Ｏｐｔｏｅｌｅｃｔｒｏｎｉｃｓ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．， Ｌｔｄ． 液晶表示パネルの製造方法
KR20180021286A (ko) * 2016-08-18 2018-03-02 삼성디스플레이 주식회사 표시 장치 및 그 제조방법
KR102794829B1 (ko) * 2016-08-18 2025-04-11 삼성디스플레이 주식회사 표시 장치 및 그 제조방법
KR20180025431A (ko) * 2016-08-30 2018-03-09 삼성디스플레이 주식회사 유기 발광 표시 장치
KR102791286B1 (ko) * 2016-08-30 2025-04-04 삼성디스플레이 주식회사 유기 발광 표시 장치
CN111146215B (zh) * 2020-02-21 2022-12-09 京东方科技集团股份有限公司 一种阵列基板、其制作方法及显示装置
CN111146215A (zh) * 2020-02-21 2020-05-12 京东方科技集团股份有限公司 一种阵列基板、其制作方法及显示装置
CN111725281B (zh) * 2020-06-12 2023-08-04 维沃移动通信有限公司 显示模组及电子设备
CN111725281A (zh) * 2020-06-12 2020-09-29 维沃移动通信有限公司 显示模组及电子设备

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