JP2001284317A5 - - Google Patents

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Publication number
JP2001284317A5
JP2001284317A5 JP2000095197A JP2000095197A JP2001284317A5 JP 2001284317 A5 JP2001284317 A5 JP 2001284317A5 JP 2000095197 A JP2000095197 A JP 2000095197A JP 2000095197 A JP2000095197 A JP 2000095197A JP 2001284317 A5 JP2001284317 A5 JP 2001284317A5
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Japan
Prior art keywords
gas
film
etching
oxygen atom
osmium
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JP2000095197A
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Japanese (ja)
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JP3658269B2 (ja
JP2001284317A (ja
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Publication of JP2001284317A5 publication Critical patent/JP2001284317A5/ja
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JP2000095197A 2000-03-29 2000-03-29 固体表面及び半導体製造装置の処理方法並びにそれを用いた半導体装置の製造方法 Expired - Fee Related JP3658269B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000095197A JP3658269B2 (ja) 2000-03-29 2000-03-29 固体表面及び半導体製造装置の処理方法並びにそれを用いた半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000095197A JP3658269B2 (ja) 2000-03-29 2000-03-29 固体表面及び半導体製造装置の処理方法並びにそれを用いた半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2001284317A JP2001284317A (ja) 2001-10-12
JP2001284317A5 true JP2001284317A5 (https=) 2004-11-25
JP3658269B2 JP3658269B2 (ja) 2005-06-08

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JP2000095197A Expired - Fee Related JP3658269B2 (ja) 2000-03-29 2000-03-29 固体表面及び半導体製造装置の処理方法並びにそれを用いた半導体装置の製造方法

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JP (1) JP3658269B2 (https=)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3822804B2 (ja) 2001-06-18 2006-09-20 株式会社日立製作所 半導体装置の製造方法
JP2005187880A (ja) * 2003-12-25 2005-07-14 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude 成膜装置のクリーニング方法
JP5481547B2 (ja) * 2006-08-24 2014-04-23 富士通セミコンダクター株式会社 金属付着物の除去方法、基板処理装置、および記録媒体
KR101483318B1 (ko) 2007-02-21 2015-01-16 레르 리키드 쏘시에떼 아노님 뿌르 레?드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 기판상에 루테늄계 막을 형성하는 방법
JP5190215B2 (ja) * 2007-03-30 2013-04-24 東京エレクトロン株式会社 ターボ分子ポンプの洗浄方法
US9482755B2 (en) 2008-11-17 2016-11-01 Faro Technologies, Inc. Measurement system having air temperature compensation between a target and a laser tracker
WO2012141810A1 (en) 2011-03-03 2012-10-18 Faro Technologies, Inc. Target apparatus and method
WO2011106072A2 (en) 2010-02-23 2011-09-01 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Use of ruthenium tetroxide as a precursor and reactant for thin film depositions
US9772394B2 (en) 2010-04-21 2017-09-26 Faro Technologies, Inc. Method and apparatus for following an operator and locking onto a retroreflector with a laser tracker
US9377885B2 (en) 2010-04-21 2016-06-28 Faro Technologies, Inc. Method and apparatus for locking onto a retroreflector with a laser tracker
US8619265B2 (en) 2011-03-14 2013-12-31 Faro Technologies, Inc. Automatic measurement of dimensional data with a laser tracker
US9400170B2 (en) 2010-04-21 2016-07-26 Faro Technologies, Inc. Automatic measurement of dimensional data within an acceptance region by a laser tracker
US9164173B2 (en) 2011-04-15 2015-10-20 Faro Technologies, Inc. Laser tracker that uses a fiber-optic coupler and an achromatic launch to align and collimate two wavelengths of light
US9482529B2 (en) 2011-04-15 2016-11-01 Faro Technologies, Inc. Three-dimensional coordinate scanner and method of operation
US9686532B2 (en) 2011-04-15 2017-06-20 Faro Technologies, Inc. System and method of acquiring three-dimensional coordinates using multiple coordinate measurement devices
GB2504890A (en) 2011-04-15 2014-02-12 Faro Tech Inc Enhanced position detector in laser tracker
EP2762452B1 (en) 2011-05-31 2019-02-20 National University Corporation Hamamatsu University School of Medicine Recovery of reusable osmium tetroxide
JP6099675B2 (ja) 2012-01-27 2017-03-22 ファロ テクノロジーズ インコーポレーテッド バーコード識別による検査方法
US9041914B2 (en) 2013-03-15 2015-05-26 Faro Technologies, Inc. Three-dimensional coordinate scanner and method of operation
US9395174B2 (en) 2014-06-27 2016-07-19 Faro Technologies, Inc. Determining retroreflector orientation by optimizing spatial fit
SG11201703033RA (en) 2014-10-17 2017-05-30 Acm Research Shanghai Inc Barrier layer removal method and semiconductor structure forming method
JP7077108B2 (ja) * 2018-04-05 2022-05-30 東京エレクトロン株式会社 被加工物の処理方法
US11183398B2 (en) * 2018-08-10 2021-11-23 Tokyo Electron Limited Ruthenium hard mask process
JP7330046B2 (ja) 2019-09-30 2023-08-21 東京エレクトロン株式会社 基板処理方法、及び基板処理装置
JP7576920B2 (ja) * 2020-03-27 2024-11-01 株式会社Screenホールディングス 基板処理装置
US12400842B2 (en) * 2021-01-19 2025-08-26 Lam Research Corporation Method of cleaning chamber components with metal etch residues
US11798813B2 (en) * 2021-04-26 2023-10-24 Applied Materials, Inc. Selective removal of ruthenium-containing materials
JP7693481B2 (ja) * 2021-09-21 2025-06-17 東京エレクトロン株式会社 成膜装置、成膜方法及び成膜システム

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