JP2001257305A - Resin-sealed semiconductor device and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a low-cost and thin semiconductor device which can be manufactured by rationalized processes by directly bonding an electrode of a semiconductor chip and an inner lead, and also to provide a method of manufacturing the same. SOLUTION: A top part of a bonding projection 5a, embossed like a warhead in a flat face near a leading edge of the inner lead 5, is brought into pressure contact with the electrode 3 of the semiconductor chip 2. Under this condition, the semiconductor chip 2 and the inner lead 5 are bonded by an insulating adhesive member 8 applied on both faces with a thermosetting epoxy adhesive to hold the pressure contact conditions between the electrode 3 and the bonding projection 5a. Then, the semiconductor chip 2, the insulating adhesive member 8, and the inner lead 5 are sealed integrally by a sealing resin 9, to form a resin-sealed semiconductor device 1.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor chip and an inner lead bonded to each other by an insulating adhesive member while an electrode of the semiconductor chip is pressed against a bonding projection formed on a flat end portion of the inner lead. The present invention relates to a resin-encapsulated semiconductor device whose production process is rationalized by resin-encapsulation, and a method of manufacturing the same.

[0002]

2. Description of the Related Art In a conventional resin-encapsulated semiconductor device, the connection between an electrode of a semiconductor chip and an inner lead is generally performed by a wire bonding method. The development of high integration, miniaturization, and high functionality has been remarkable, and the connection between the electrode of the semiconductor chip and the inner lead has been correspondingly increased through the solder bump formed on the electrode of the semiconductor chip. Many devices using a flip-chip connection method for directly connecting to a device have been used. A conventional resin-encapsulated semiconductor device to which the flip-chip connection method is applied is disclosed in, for example, Japanese Patent Application Laid-Open No. 4-85837. The frame is placed and pressed with a heating block to apply an insulating adhesive film (tape) on the circuit forming surface of the semiconductor chip and to melt and join the inner lead of the lead and the solder bump electrode of the semiconductor chip. A technique for performing this is disclosed.

[0003]

However, the leads in the above-mentioned conventional resin-encapsulated semiconductor device are connected to the external terminals (aluminum electrodes) of the semiconductor chip by heating and melting and solidifying the solder bump electrodes. Therefore, as shown in FIG. 6 of the publication, the configuration of the solder bump electrode is such that a Cu / Ti two-layer barrier metal layer is formed on an external terminal (aluminum electrode) of a semiconductor chip, and a Ni layer is formed thereon. Formed, and a solder bump (Pb / Sn) is formed thereon, and there is a problem that the configuration of the solder bump is complicated and the manufacturing cost is high.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and is intended to reduce the cost by streamlining the manufacturing process by directly joining the electrodes (aluminum electrodes) of a semiconductor chip and inner leads. It is an object of the present invention to obtain a resin-sealed semiconductor device and a method of manufacturing the same.

[0005]

A resin-encapsulated semiconductor device according to the present invention comprises a semiconductor chip having an electrode of an integrated circuit formed on a main surface thereof, and a tip portion disposed closely along the main surface of the semiconductor chip. The top of the bonding protrusion formed on the nearby flat surface has a lead having an inner lead pressed against the electrode, and a predetermined region of the main surface near the electrode and the inner lead facing the region are bonded to each other to form an electrode. And an insulating adhesive member for maintaining a contact pressure state at the top of the joint protrusion, and a sealing resin for integrally sealing the semiconductor chip, the insulating adhesive member, and the inner leads. Further, the insulating adhesive member is arranged in a predetermined region on at least one main surface on the end side or the center side of the semiconductor chip near the electrode.

A method of manufacturing a resin-encapsulated semiconductor device according to the present invention is a method of manufacturing a resin-sealed semiconductor device by integrating a semiconductor chip and inner leads closely disposed along a main surface of the semiconductor chip and electrically connected to electrodes of an integrated circuit. In a method of manufacturing a resin-encapsulated semiconductor device for sealing, a step of forming a bonding projection by punching a flat surface near a tip portion of an inner lead, and a predetermined region on a main surface near an electrode and an inner surface facing the region. A step of heating and solidifying the insulating adhesive member in a state where the insulating adhesive member is interposed between the leads, the electrodes and the tops of the joining protrusions are aligned, and the electrodes are pressed against each other. Further, the insulating adhesive member is arranged in a predetermined region on at least one main surface on the end side or the center side of the semiconductor chip near the electrode. Further, the insulating adhesive member is formed by applying a thermosetting resin or a thermoplastic resin having a heat resistant temperature exceeding the resin sealing temperature.

[0007]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 Hereinafter, a resin-sealed semiconductor device and a method of manufacturing the same according to an embodiment of the present invention will be described with reference to the drawings. 1 is a cross-sectional view of a resin-sealed semiconductor device according to Embodiment 1 of the present invention. FIG. 2 is a plan view showing a state in which a lead connection step of the resin-sealed semiconductor device of FIG. 1 has been completed. 3 is an enlarged cross-sectional view of a portion A in FIG. 1, and FIG. 4 is a diagram illustrating a method of manufacturing the resin-sealed semiconductor device of FIG.

In FIG. 1 to FIG. 4, reference numeral 2 denotes a semiconductor chip on which an integrated circuit is formed, and a plurality of 80 to 100 μm square electrodes 3 formed of an aluminum film are arranged around the main surface edge. Have been. And 160-300
The inner lead 5 of the lead 4 having a width of about μm and a thickness of about 90 to 200 μm is formed along the main surface of the semiconductor chip 2 as shown in FIGS.
, And the top of the joint protrusion 5a formed on a plane near the tip is pressed against the electrode 3 with a force of, for example, about 40 to 70 g. In addition, the joining protrusion 5
a has a root diameter of about 100 μm and a height of about 100 μm and is formed in a warhead shape. The end of the main surface of the semiconductor chip 2 in the vicinity of the region where the electrode 3 is formed is connected to the inner lead 5 which is opposed via the insulating bonding member 8 having both surfaces to which a thermosetting epoxy adhesive is adhered. It is adhered, and the contact pressure state between the joining protrusion 5a and the electrode 3 is maintained. Reference numeral 7 denotes a lead frame (not shown) in which a plurality of leads 4 having an inner lead 5 and an outer lead 6 are formed in a frame. Here, the insulating joint member 8 is a member in which a thermosetting epoxy adhesive is adhered to both sides using a polyimide resin film having a thickness of, for example, about 50 μm as a base material. Reference numeral 9 denotes a sealing resin made of a thermosetting epoxy. The semiconductor chip 2, the electrodes 3, the inner leads 5, the bonding protrusions 5a, and the insulating bonding members 8 are integrally sealed with the sealing resin 9 to form a resin sealing type. The semiconductor device 1 is configured.

Next, the resin-sealed semiconductor device 1 having the above configuration
Will be described with reference to FIG. First, die 2
The lead frame 7 is set on the die 20 by aligning the processing hole 20a of No. 0 and the warhead-shaped projection 21a of the pressing tool 21 with the tip of the inner lead 5, and lowering the pressing tool 21 in the direction of the arrow to the inner lead. A joint projection 5a is formed on a plane near the front end of the joint 5 in the form of a warhead.
(A)). A plurality of semiconductor chips 2 having the bonding member 8 adhered to the main surface are fixed at predetermined positions on a heat block 22 in which a heater 23 is embedded, and the semiconductor chips 2 are preheated to, for example, about 100 ° C. (FIG. 4B )). Next, the lead frame 7 is mounted on the semiconductor chip 2 with the top of the joint protrusion 5 a of the inner lead 5 aligned with the electrode 3 of the semiconductor chip 2. Then, the pressing tool 24 is lowered in the direction of the arrow to press the tip of the inner lead 5, and the semiconductor chip 2 is pressed against the electrode 3 and the top of the joint protrusion 5 a.
Is heated to about 170 ° C. and maintained for about 10 to 20 seconds, and the thermosetting epoxy adhesive of the insulating joint member 8 is cured to cure the electrode of the semiconductor chip 2 of the inner lead 5. 3 is completed (Fig. 4
(C)). Then, the lead frame 7 to which the semiconductor chip 2 is adhered is set in the cavities 31a, 30a of the upper and lower sealing dies 31, 30, and the molten resin injected into the pot 31c is pressed by the plunger 32. The semiconductor chip 2, the insulating adhesive member 8, and the inner lead 5 are integrally resin-sealed with the sealing resin 9 after being injected into the cavities 31a, 30a via the runners 31b, 30b (FIG. 4E).

As described above, according to the first embodiment of the present invention, the joint protrusion 5a of the inner lead 5 is formed by being pushed out by the pressing tool 21 having the warhead-shaped protrusion 21a, and the electrode 3 of the semiconductor chip 2 and the joint protrusion 5a are formed. In a state in which the top of the semiconductor chip 2 is brought into contact with the top of the semiconductor chip 2, the area between the inner leads 5 facing the area of the main surface end of the semiconductor chip 2 is bonded and solidified via an insulating adhesive member 8 between the electrode 3 and the bonding projection 5 a. Is firmly held in contact pressure and is integrally resin-sealed, so that the thickness of the package can be reduced, and electrical bonding between each electrode 3 of the semiconductor chip 2 and the inner lead 5 can be obtained at low cost. A resin-sealed semiconductor device is obtained. Further, since the electrode 3 and the inner lead 5 are not connected by the bonding wire, the resin sealing can be performed with high reliability.

Embodiment 2 FIG. 5 is a sectional view of a resin-encapsulated semiconductor device according to Embodiment 2 of the present invention, and FIG.
FIG. 7 is an enlarged sectional view of a portion B in FIG. 1 showing a state after the lead connection step of the resin-sealed semiconductor device has been completed.

In FIG. 5 to FIG. 7, reference numeral 10 denotes an insulating adhesive member bonded between the front end surface of the inner lead 5 and the area near the electrode 3 on the main surface of the semiconductor chip 2;
It has the same configuration as the insulating adhesive member 8. In the second embodiment, as shown in the figure, the insulating adhesive members 8 and 9 are adhered to each other with the joint between the electrode 3 and the joint protrusion 5a interposed therebetween, thereby more reliably maintaining the contact pressure. Embodiment 1
It is different from the case. Therefore, the method of manufacturing the resin-encapsulated semiconductor device is the same as that of the first embodiment, and has the same effect as that of the first embodiment.

In the first and second embodiments,
Although the case where the electrodes of the semiconductor chip are arranged at the ends of the main surface is shown, the invention is not limited to this, and the present invention provides a LOC (Lead On Chip) in which the electrodes are arranged at the center of the main surface.
It can also be applied to die semiconductor chips. Also, the insulating adhesive member provided on the end side main surface of the semiconductor chip near the electrode and the one provided on the end side and center side main surface of the semiconductor chip near the electrode are shown. The same effect can be obtained by providing the device on the center-side main surface. Further, the insulating adhesive member has a thermosetting epoxy resin adhered to both surfaces, but a known thermoplastic polyester resin adhesive having a heat resistance temperature exceeding the temperature at the time of resin sealing (about 180 ° C.) is shown. An agent may be used, and resin sealing can be performed without losing the contact pressure holding force between the electrode and the joining protrusion.

[0014]

The present invention is configured as described above.
The following effects are obtained. A resin-encapsulated semiconductor device and a method of manufacturing the same are described by using an inner lead facing a semiconductor chip surface near an electrode in a state where an electrode of a semiconductor chip and a top of a joint protrusion formed on a plane near an end of an inner lead are brought into pressure contact with each other. The space between the electrodes is bonded with an insulating adhesive member to maintain the contact pressure between the electrodes and the joint protrusions and is integrally sealed with resin, so that the electrical connection between the inner leads and the electrodes can be realized at low cost and the resin The sealing can be performed with high reliability and the package thickness can be reduced.

[Brief description of the drawings]

FIG. 1 is a sectional view of a resin-sealed semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a plan view showing a state in which a lead connection step of the resin-encapsulated semiconductor device according to the first embodiment of the present invention has been completed;

FIG. 3 is an enlarged sectional view of a portion A in FIG.

FIG. 4 is a diagram illustrating a method for manufacturing the resin-encapsulated semiconductor device according to the first embodiment of the present invention.

FIG. 5 is a sectional view of a resin-sealed semiconductor device according to a second embodiment of the present invention;

FIG. 6 is a plan view showing a state in which a lead connection step of a resin-sealed semiconductor device according to a second embodiment of the present invention has been completed;

FIG. 7 is an enlarged sectional view of a portion B in FIG.

[Explanation of symbols]

1, 11; resin-encapsulated semiconductor device 2: semiconductor chip
3; electrode 4; lead 5; inner lead 5a; bonding projection 8, 10; insulating adhesive member 9;

Claims (5)

[Claims] 1. A semiconductor chip having an electrode of an integrated circuit formed on a main surface thereof, and a top portion of a bonding projection formed on a plane near the front end portion of the semiconductor chip near the main surface and in contact with the electrode. A lead having a pressed inner lead, a predetermined area of the main surface in the vicinity of the electrode and the inner lead facing the area are bonded to each other to maintain a contact pressure state between the electrode and the top of the joining protrusion. And a sealing resin for integrally sealing the insulating adhesive member, the semiconductor chip, the insulating adhesive member, and the inner lead. 2. The semiconductor device according to claim 1, wherein the insulating adhesive member is disposed in a predetermined region of at least one of the main surfaces on the edge side or the center side of the semiconductor chip near the electrode.
The resin-encapsulated semiconductor device according to claim 1. 3. A method of manufacturing a resin-encapsulated semiconductor device in which a semiconductor chip and an inner lead which is disposed closely along a main surface of the semiconductor chip and electrically connected to an electrode of an integrated circuit are integrally resin-encapsulated. Forming a bonding projection by stamping out on a plane near the tip of the inner lead, interposing an insulating adhesive member between a predetermined region of the main surface near the electrode and the inner lead facing this region. And a step of heating and solidifying the insulating adhesive member in a state where the electrode and the top of the joining protrusion are aligned and pressed against each other. 4. The resin encapsulation according to claim 3, wherein the insulating adhesive member is arranged in a predetermined region on at least one of the main surfaces on the end side or the center side of the semiconductor chip near the electrodes. Of manufacturing a semiconductor device. 5. The resin according to claim 3, wherein the insulating adhesive member is coated with a thermosetting resin or a thermoplastic resin having a heat-resistant temperature exceeding a resin sealing temperature. A method for manufacturing a sealed semiconductor device.