JP2001250861A - Semiconductor device and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To manufacture a semiconductor device having a multilayer wiring structure without peeling of an interlayer film and of metal wiring and with an easy and simple process. SOLUTION: The semiconductor device 8 contains a lower layer metal wiring 2 formed on a base film 1, an organic interlayer film 4 composed of an insulating material formed on the base film 1 and on the lower layer metal wiring 2, an upper layer metal wiring 7 formed on the organic interlayer film 4, contact metal members 12 that are connected to the lower layer metal wiring 2 piercing the organic interlayer film 4. The adhesion between the metal wiring and the interlayer film is enhanced by inserting a first insulating film 10 between the lower layer metal film 2 and the organic interlayer film 4 and a second insulating film 14 between the upper layer metal wiring 7 and the organic interlayer film 4. Forming the first insulating film 10 with a material that can be etched selectively against the second insulating film 14 makes the mask of photo-resist unnecessary in removing the first insulating film 10 in through holes 11 on the lower layer metal wiring 2.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a multilayer wiring structure and a method for manufacturing the semiconductor device.

[0002]

2. Description of the Related Art Compound semiconductor devices such as GaAs are widely used as MMICs (microwave monolithic ICs) for mobile communication. Miniaturization and multifunctionality are required. In order to reduce the size of this type of semiconductor device, multilayer wiring is an essential technology. It is important for the wiring to be multilayered that it is important to surely cut off between the wirings. For this reason, in order to suppress the interlayer capacitance to be low, a material having a low dielectric constant is used for the interlayer film and the film thickness is as large as 5 μm or more. Is set.

Further, in LSIs mainly using a Si substrate, the influence of inter-wiring capacitance becomes remarkable as miniaturization progresses. Therefore, the spread of an electric field between wirings by using a low dielectric constant film as an inter-wiring and interlayer film. Attempts have been made to reduce the capacitance and reduce the capacitance between wires. As these interlayer films, low-dielectric-constant organic films containing fluorine have the lowest relative dielectric constant and are less than 3, and thus are promising.

A conventional method for manufacturing a semiconductor device having a multilayer wiring structure using a 5 μm thick organic film as an interlayer film will be described below. When an organic film such as benzocyclobutene (BCB) is processed by dry etching, the selectivity with the photoresist is almost 1 because the components are similar to the photoresist. Therefore, when dry-etching an organic film using only a photoresist as a mask, a photoresist that is sufficiently thicker than the organic film and has a thickness that allows for over-etching is required.

However, in this case, a problem arises that the photoresist is too thick to resolve a fine pattern. To solve this problem, a dry etching method using a photoresist and a hard mask such as an insulating film is proposed. Have been. For this method, see Robert D. et al.
A paper by Tacito et al. (“Patterning of
Benzocyclobutene by Reac
five Ion Etching ", J. Elect
rochem. Soc. , Vol. 143, No. 8,
1996), JP-A-02-244625, and JP-A-10-256240.

FIGS. 3A to 3C are cross-sectional side views showing a semiconductor device in each step in the conventional method of manufacturing a semiconductor device. In the first conventional method shown in FIG.
First, a base film 1 made of an insulating film such as a silicon oxide film is formed on a semiconductor substrate (not shown), and then a lower metal wiring 2 made of Au plating is formed. Next, benzocyclobutene (BCB) as an organic interlayer film is formed on the entire surface to a thickness of 5 μm.
And cured at 300 ° C. for 20 minutes to form an organic interlayer film 4.

Further, a thickness of 0.2 μm is formed on the organic interlayer film 4.
An m ₂ SiO ₂ film 14 is formed, and a 1 μm thick photoresist 6 is formed thereon (FIG. 3A). Next, using the photoresist layer 6 as a mask, the SiO ₂
RIE (Re) using a mixed gas of HF ₃ , CF ₄ and Ar
Dry etching is performed anisotropically by active ion etching. Further, the photoresist layer 6
The organic interlayer film 4 is dry-etched using the SiO2 film 5 and the mask as a mask to obtain a through hole 11 (FIG. 3B).

In the dry etching at this time, by using a mixed gas of Cl ₂ and O ₂ , the organic interlayer film 4 is made anisotropic and the selectivity to SiO ₂ is 40.
Thus, etching can be performed. Therefore, after the organic interlayer film 4 is dry-etched, the photoresist layer 6 is removed, but the SiO ₂ film 14 remains. Then, the contact metal 12 and the upper metal wiring 7 are sequentially formed by plating or sputtering to obtain a multilayer wiring structure (FIG. 3C).

However, in this method, when the lower metal wiring 2 is made of Au or Cu, the adhesion between the organic interlayer film and the lower metal wiring 2 is poor. This causes a problem that the organic interlayer film 4 is peeled off from the lower metal wiring 2. Further, since there is no etching stopper at the time of etching the organic film, Au and Cu of the lower metal wiring 2 are also partially etched by the over-etching, and as a result, are re-adhered to the side wall of the through hole 11 and the surface of the SiO ₂ film 14. 13 may occur, causing a short circuit between the lower layer and the upper layer wiring.

In order to solve this problem, a method of inserting an SiO ₂ film on the lower metal wiring 2 has been proposed. This second conventional method will be described with reference to FIG. 4A to 4D are cross-sectional side views showing a semiconductor device in each step in a second conventional manufacturing method. In addition,
In the figure, the same elements as those in FIG. 3 are denoted by the same reference numerals.

After a base film 1 made of an insulating film such as a silicon oxide film is formed on a semiconductor substrate (not shown), Au
The lower metal wiring 2 made of plating is formed, and a 0.2 μm thick SiO ₂ film 3A is formed thereon. Thereafter, benzocyclobutene (BCB) which is an organic interlayer film 4 is formed on the entire surface.
Is formed, and a 0.2 μm thick SiO ₂ film 8A is formed thereon.
Is formed, and a photoresist layer 6 having a thickness of 1 μm is formed on the oxide film (FIG. 4A). Next, using the photoresist layer 6 as a mask, the SiO ₂ film 8A CHF ₃
Dry etching is performed anisotropically by RIE using a mixed gas of CF ₄ and Ar, and a mixed gas of Cl ₂ and O ₂ is further etched using the photoresist layer 6 and the SiO ₂ film 8A as a mask. The organic interlayer film 4 is dry-etched by the used RIE (FIG. 4B). In the dry etching of the organic interlayer film 4, since the selectivity of the SiO ₂ can be etched at least 40, SiO ₂ film 3 on the lower layer wiring
A serves as an etching stopper, and the lower wiring is not etched. Although the photoresist layer 6 has been removed, the SiO ₂ film 8A on the organic interlayer film 4 remains.

Then, in order to obtain a contact with the lower metal wiring 2, the SiO ₂ film 3A is etched on the entire surface by RIE using a mixed gas of CHF ₃ , CF ₄ and Ar,
The SiO ₂ film 3A on the lower wiring is removed. At this time, the SiO ₂ film 8A on the organic interlayer film 4 is simultaneously removed (FIG. 4C). Then, the contact metal 12 and the upper metal wiring 7 are sequentially formed by plating or sputtering to obtain a multilayer wiring structure (FIG. 4D).

However, in this method, since the metal wiring on the organic interlayer film 4 has poor adhesion, the upper metal wiring 7
Is removed from the organic interlayer film 4. To solve this problem, an SiO ₂ film 8A on the organic interlayer film 4 is used.
And the upper metal wiring 7 may be formed thereon. Therefore, after the organic interlayer film 4 is dry-etched by the second conventional method, a photoresist layer having only a through-hole is formed, and the SiO ₂ film 3A on the lower metal wiring 2 is formed with the photoresist layer. An etching method is conceivable. However, it is technically difficult to form a photoresist layer capable of finely resolving a thickness of 5 μm in the through hole. Even if it can be created, it is undeniable that the number of processes increases.

The present invention has been made to solve such a problem, and an object of the present invention is to provide a multilayer wiring structure which can be manufactured by an easy and simple process without peeling of an interlayer film or a metal wiring. And a semiconductor device having the same. Another object of the present invention is to provide a manufacturing method capable of manufacturing a semiconductor device having a multilayer wiring structure in an easy and simple process without peeling of an interlayer film or a metal wiring.

[0015]

In order to achieve the above object, the present invention provides a first metal wiring formed on a base film, and a first metal wiring formed on the base film and the first metal wiring. Semiconductor device including an interlayer film made of an insulating material, a second metal wire formed on the interlayer film, and a contact metal connected to the first metal wire through a through hole penetrating the interlayer film. And a first insulating film interposed between the first metal wiring and the interlayer film, and a second insulating film interposed between the second metal wiring and the interlayer film. And wherein the first insulating film is made of a material that can be selectively etched with respect to the second insulating film.

Further, according to the present invention, a first metal wiring is formed on a base film, and an interlayer film made of an insulating material is formed on the base film and the first metal wiring. A through hole is formed on the first metal wiring to penetrate and expose the first metal wiring, a conductive material is filled in the through hole to form a contact metal, and a through hole is formed on the interlayer film. A method of manufacturing a semiconductor device for forming a second metal wiring, wherein the first and second insulating films are formed on the first metal wiring and the interlayer film, respectively. Forming a first insulating film on the first metal wiring and the base film before forming the interlayer film by using a material capable of selectively etching a film with respect to the second insulating film; And thereafter, the layer is formed on the first insulating film. Forming a film, forming the second insulating film on the interlayer film before forming the through hole, forming the second insulating film on the interlayer film by etching using the first insulating film as an etching stopper; After the first insulating film in the through hole is selectively etched with respect to the second insulating film, the first insulating film in the through hole is formed through the insulating film and the interlayer film. The contact metal is formed by filling a conductive material, and the second insulating film is formed on the second insulating film on the interlayer film.
Is formed.

According to the present invention, between the first metal wiring and the interlayer film, and between the second metal wiring and the interlayer film,
Since the first and second insulating films having good adhesion to both the metal wiring and the interlayer film can be interposed,
The problem that the interlayer film is peeled off from the first metal wiring and the second metal wiring is peeled off from the interlayer film are solved.
Then, the contact metal is first placed through the through hole.
When removing the first insulating film on the first metal wiring to connect to the first metal wiring, the first insulating film is made of a material that can be selectively etched with respect to the second insulating film. Without forming a photoresist layer or the like on the second insulating film,
Only the first insulating film can be selectively etched. Therefore, a multilayer wiring structure including the first and second insulating films can be formed by an easy and simple process.

[0018]

Embodiments of the present invention will be described below with reference to the drawings. (A) to (D) of FIG.
FIG. 4 is a cross-sectional side view illustrating a semiconductor device in each step according to an example of the manufacturing method of the present invention. And (D) of FIG.
Shows an example of a semiconductor device according to the present invention. In the figure,
The same elements as those in FIG. 3 and the like are denoted by the same reference numerals.

First, an example of a semiconductor device of the present invention will be described with reference to FIG. The semiconductor device 8 having the multilayer wiring structure shown in FIG. 1D has a 0.2 μm-thick first insulating film on the lower metal wiring 2 (first metal wiring) and the underlying film 1. A film 10, an organic interlayer film 4 having a thickness of 5 μm, and a second insulating film 14 having a composition different from that of the first insulating film 10 and having a thickness of 0.2 μm are sequentially formed. Then, an upper metal wiring 7 (second metal wiring) is formed on the second insulating film 14, passes through the first insulating film 10, the organic interlayer film 4, and the second insulating film 14, and passes through the upper metal wiring 7. Contact metal 1 connecting wiring 7 and lower metal wiring 2
2 are formed.

The organic interlayer film 4 is made of carbon (C) such as a benzocyclobutene (BCB) film or a polyimide film.
Any film may be used as long as it contains. Of course, in order to suppress the interlayer capacitance, the lower the dielectric constant of the organic interlayer film 4, the better the result.
Further, as a material of the first and second insulating films 10 and 14, the first insulating film 10
A material that can be selectively etched with respect to the insulating film 14 is used. For example, a silicon nitride film (SiN
Film) and a silicon oxide film (SiO ₂ film) are one example, and the first insulating film 10 on the lower metal wiring 2 is made of S
When an iN film is used, an SiO ₂ film is used as the second insulating film 14 on the organic interlayer film 4. Conversely, when a SiO ₂ film is used as the first insulating film 10, a SiN film is used as the second insulating film 14.

As described above, in the semiconductor device 8 of the present embodiment, each metal wiring is provided between the lower metal wiring 2 and the organic interlayer film 4 and between the upper metal wiring 7 and the organic interlayer film 4. Since the first and second insulating films 10 and 14 having good adhesion can be interposed in both the first and second organic interlayer films 4, the organic interlayer film 4 can be separated from the lower metal wiring 2,
In addition, the problem that the upper metal wiring 7 is separated from the organic interlayer film 4 is solved.

Then, as described in detail below, the first insulating film 10 on the lower metal interconnection 2 is connected to connect the contact metal 12 to the lower metal interconnection 2 through the through hole.
Is removed, the first insulating film 10 becomes the second insulating film 14
Therefore, only the first insulating film 10 can be selectively etched without forming a photoresist layer or the like on the second insulating film 14. Therefore, in an easy and simple process,
A multilayer wiring structure including the first and second insulating films 10 and 14 can be formed.

Next, one example of a method of manufacturing a semiconductor device according to the present invention will be described.
Examples will be described with reference to FIGS.
You. First, silicon oxide is placed on a semiconductor substrate (not shown).
After forming the base film 1 made of an insulating film such as a film, the Au film is formed.
The lower metal wiring 2 composed of a pin is formed. Next, all
A 0.2 μm thick SiN film is used as the first insulating film 10 on the surface.
Benzocyclobute to form an organic interlayer film
(BCB) is applied to a thickness of 5 μm,
After curing for minutes, an organic interlayer film 4 is formed. Organic interlayer film
4 is a SiO 2 layer having a thickness of 0.2 μm._TwoThe film is a second insulating film
14 and a 1 μm thick photoresist on top of it.
A layer 6 is formed (FIG. 1A). Next, the photo cashier
Using the strike layer 6 as a mask, the second insulating film 14 is_Three
And CF_FourIs anisotropic by RIE using a mixed gas of Ar and Ar
Dry etching. In addition, a photoresist layer
6 and the second insulating film 14 as a mask,
Is dry-etched to obtain a through hole 11 (FIG. 1).
(B)). In this case, as dry etching
Is Cl_TwoAnd O_TwoBy using a mixed gas with
An interlayer film 4 is formed anisotropically and SiO_TwoIs 4
0, Etching with a selectivity to SiN of 50 or more
Can be. Therefore, the organic interlayer film 4 is dry-etched.
After the first metallization, the first
The insulating film 10 functions as an etching stopper, and
2, the first insulating film 10 remains. Also the organic layer
Although the photoresist layer 6 on the interlayer film 4 has been removed,
iO _TwoThe second insulating film 14 is left.

Next, the first insulating film 1 on the lower metal wiring 2
0 is anisotropically etched under etching conditions having selectivity to SiO _{2 as} the material of the second insulating film 14 (FIG. 1C). For example, by RIE using a mixed gas of CHF ₃ and O ₂ , a selectivity ratio of about 10 is obtained for SiN / SiO ₂ . Then, a plating pass made of Ti / Au is sputtered on the entire surface to form a photoresist layer (not shown) having an opening in the through-hole portion and the upper wiring portion, and then Au plating is applied to the through-hole portion and the upper wiring portion. Form. Subsequently, the entire surface is etched back by ion milling using the Au plating as a mask, and the plating path is removed to obtain the upper metal wiring 7 and the contact metal 12 (FIG. 1D).

In the semiconductor device 8 manufactured as described above, the first insulating film 10 is interposed between the lower metal wiring 2 and the organic interlayer film 4, and is provided between the organic interlayer film 4 and the upper metal wiring 7. Since the second insulating film 14 is interposed therebetween, the adhesiveness is excellent, and even when the organic interlayer film 4 having a thickness of 5 μm is used, the organic interlayer film 4 is peeled off from the lower metal wiring 2 or the upper metal The wiring 7 does not peel off from the organic interlayer film 4.

In the manufacturing method according to the present embodiment,
When the first insulating film 10 on the lower metal wiring 2 in the through hole 11 is removed, the first insulating film 10
4, the first insulating film 10 can be selectively etched without forming a photoresist layer or the like on the second insulating film 14. Therefore, a multilayer wiring structure including the first and second insulating films 10 and 14 can be formed by an easy and simple process. Further, when dry etching the thick organic interlayer film 4, the first insulating film 10 serves as an etching stopper, so that the lower metal wiring 2 is not etched. Therefore, the problem that the lower metal wiring 2 and the upper metal wiring 7 are short-circuited does not occur.

When an SiO ₂ film is used as the first insulating film 10 and a SiN film is used as the second insulating film 14,
The SiO ₂ film is formed under conditions having selectivity to the SiN film, for example, RIE using a mixed gas of C ₂ F ₆ and CO and Ar.
May be etched. The material of the first and second insulating films 10 and 14 is not limited to SiO ₂ and SiN, but has good adhesion to metal wirings and interlayer films. Any material can be used as long as the first insulating film 10 can be selectively etched with respect to the above. In the present embodiment,
The organic interlayer film 4 is formed by coating as an example,
D may be used to form the organic interlayer film 4. Further, the organic interlayer film 4 is formed by BCB as an example, but any material may be used as long as it is an organic film.

Next, another embodiment of the present invention will be described. 2A to 2D are cross-sectional side views showing a semiconductor device in each step according to another example of the manufacturing method of the present invention. FIG. 2D shows another example of the semiconductor device according to the present invention. In the figure, the same elements as those in FIG. 1 are denoted by the same reference numerals.

The semiconductor device 16 shown in FIG.
This is different from the semiconductor device 8 in that a third insulating film 18 is further interposed between the organic interlayer film 4 and the second insulating film 14. The semiconductor device 16 having a multilayer wiring structure is shown in FIG.
(D), the first insulating film 10 having a thickness of 0.2 μm, the organic interlayer film 4 having a thickness of 5 μm, and the same material as the first insulating film 10 are formed on the lower metal wiring 2. Thickness 0.2
A third insulating film 18 having a thickness of 0.2 μm and a second insulating film 14 having a thickness different from that of the first insulating film 10 and a thickness of 0.2 μm are sequentially formed. The upper metal wiring 7 is formed on the second insulating film 14, passes through the first insulating film 10, the organic interlayer film 4, the third insulating film 18, and the second insulating film 14, and passes through the upper metal wiring 7. 7
A contact metal 12 is formed for connecting the lower metal wiring 2 to the contact metal 12.

Therefore, in the semiconductor device 16 as well, for example, the first and third insulating films 10 and 18 are formed of silicon nitride, and the second insulating film 14 is formed of silicon oxide. High adhesion can be ensured between the metal wirings, and peeling of the organic interlayer film 4 and the metal wirings can be prevented.

Next, a method of manufacturing the semiconductor device 16 will be described.
This will be described with reference to FIGS. The above
As in the case of the embodiment, the first insulating film 10 and the second insulating film
If the edge film 14 is a film having selectivity at the time of etching,
Any insulating film is acceptable, but here is an example.
The first and third insulating films are SiN films, and the second insulating film 1
4 for SiO _TwoA membrane.

First, a base film 1 made of an insulating film such as a silicon oxide film is formed on a semiconductor substrate (not shown), and then a lower metal wiring 2 made of Au plating is formed. Subsequently, after forming a 0.2 μm thick SiN film as the first insulating film 10 on the entire surface, benzocyclobutene (BCB) is formed.
Thereby, an organic interlayer film 4 having a thickness of 5 μm is formed. On the organic interlayer film 4, a 0.2 μm thick SiN film is formed as a third insulating film 18, and a SiO ₂ film is further formed on the _second insulating film 18.
Then, a 1 μm-thick photoresist layer 6 is formed on the second insulating film 14 (FIG. 2A). Next, using the photoresist layer 6 as a mask,
The second insulating film 14 made of SiO ₂ and the third insulating film 18 made of SiN are anisotropically dry-etched by RIE using a mixed gas of CHF ₃ , CF ₄ and Ar. Further, the photoresist layer 6 and the second and third insulating films 1 are formed by RIE using a mixed gas of Cl ₂ and O _2.
The organic interlayer film 4 is dry-etched using the masks 4 and 18 as masks to obtain through holes 11 (FIG. 2B).

After that, the first insulating film 10 made of SiN on the lower metal wiring 2 is anisotropically etched under etching conditions having selectivity to SiO ₂ (FIG. 2C). For example, in the case of RIE using a mixed gas of CHF ₃ and O ₂ , a selectivity of about 10 is obtained for SiN / SiO ₂ . Then, a plating path made of Ti / Au is sputtered on the entire surface to form a photoresist layer (not shown) having openings in the contact portion and the upper wiring portion, and then Au plating is formed on the contact portion and the upper wiring portion. Then A
Using the u plating as a mask, the entire surface is etched back by ion milling, and the plating path is removed to obtain the upper metal wiring 7 (FIG. 2D).

Therefore, also in this case, the first insulating film 10 in the through hole 11 can be selectively etched with respect to the second insulating film 14, so that the case where the semiconductor device 8 is manufactured is different. Similarly, the semiconductor device 16 can be manufactured by an easy and simple process. In the present manufacturing method, since the third insulating film 18 made of the same material as the first insulating film 10 is interposed between the organic interlayer film 4 and the second insulating film 14, Even when there is only one kind of insulating film material that can provide high adhesion to the organic interlayer film 4, the first and third insulating films 1
By forming 0 and 18 from the material, good adhesion between the interlayer film and the upper metal wiring 7 can be ensured.

[0035]

As described above, according to the present invention, both the metal wiring and the interlayer film are provided between the first metal wiring and the interlayer film and between the second metal wiring and the interlayer film, respectively. Since the first and second insulating films having good adhesion to the first and second insulating films can be interposed therebetween, the problem that the interlayer film is peeled off from the first metal wiring and the second metal wiring is peeled off from the interlayer film. To eliminate. Then, when the first insulating film on the first metal wiring is removed to connect the contact metal to the first metal wiring through the through hole, the first insulating film is selected with respect to the second insulating film. Since the first insulating film is made of a material that can be selectively etched, only the first insulating film can be selectively etched without forming a photoresist layer or the like on the second insulating film. Therefore, a multilayer wiring structure including the first and second insulating films can be formed by an easy and simple process.

[Brief description of the drawings]

FIGS. 1A to 1D are cross-sectional side views showing a semiconductor device in each step according to an example of a manufacturing method of the present invention.

FIGS. 2A to 2D are cross-sectional side views showing a semiconductor device in each step according to another example of the manufacturing method of the present invention.

FIGS. 3A to 3C are cross-sectional side views showing a semiconductor device in each step in a conventional method of manufacturing a semiconductor device.

FIGS. 4A to 4D are cross-sectional side views showing a semiconductor device in each step in a second conventional manufacturing method.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Base film, 2 ... Lower metal wiring, 4 ... Organic interlayer film, 5 ... SiO2 film, 6 ... Photoresist, 7 ...
Upper metal wiring, 8: semiconductor device, 10: first insulating film, 11: through hole, 12: contact metal, 13: redeposition, 14: second insulating film, 16:
Semiconductor device, 18... Third insulating film.

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 5F004 AA04 BA04 DA01 DA04 DA16 DA23 DA26 DB03 DB23 EA06 5F033 HH13 HH18 JJ01 JJ13 JJ18 KK13 PP15 PP26 QQ08 QQ09 QQ13 QQ14 QQ16 QQ25 QQ27 QQ28 QQ37 RR04 RR04 RR04 RR04 RR04 RR06 AA10 AB02 AC10 AD09 AD10 AF04 AG01 AH02

Claims (6)

[Claims] A first metal wiring formed on a base film; an interlayer film made of an insulating material formed on the base film and the first metal wiring; A semiconductor device comprising: a formed second metal wiring; and a contact metal connected to the first metal wiring through a through hole penetrating the interlayer film, wherein the first metal wiring, the interlayer film, The first intervening between
An insulating film, and a second insulating film interposed between the second metal wiring and the interlayer film.
A first insulating film made of a material that can be selectively etched with respect to the second insulating film. A second insulating film interposed between the interlayer film and the second insulating film, wherein the third insulating film is formed of the same material as the first insulating film. The semiconductor device according to claim 1, wherein 3. The semiconductor device according to claim 1, wherein said first and second insulating films are silicon nitride and silicon oxide, respectively. 4. The semiconductor device according to claim 1, wherein said first and second insulating films are silicon oxide and silicon nitride, respectively. 5. A method of forming a first metal wiring on a base film,
Forming an interlayer film made of an insulating material on the base film and the first metal wiring, and penetrating the interlayer film to form the first film;
Forming a through-hole on the first metal wiring, exposing a conductive material to the through-hole to form a contact metal, and forming a second metal wiring on the interlayer film. A method of manufacturing a semiconductor device to be formed, wherein the first and second insulating films formed on the first metal wiring and the interlayer film, respectively,
Using a material which can be selectively etched with respect to the second insulating film, forming the first insulating film on the first metal wiring and the base film before forming the interlayer film; Forming, then, forming the interlayer film on the first insulating film, before forming the through hole, forming the second insulating film on the interlayer film, Forming the first insulating film through the second insulating film and the interlayer film by etching using the first insulating film as an etching stopper, and then forming the first insulating film in the through hole by:
After selectively etching the second insulating film,
Manufacturing the semiconductor device, wherein the through metal is filled with a conductive material to form the contact metal, and the second metal wiring is formed on the second insulating film on the interlayer film. Method. 6. A third insulating film made of the same material as that of the first insulating film is formed on the interlayer film before forming the second insulating film, and the second insulating film is formed on the third insulating film. 6. The method according to claim 5, wherein the insulating film is formed.