JP2001237240A - 低誘電率膜及びこの低誘電率膜を有する半導体素子 - Google Patents

低誘電率膜及びこの低誘電率膜を有する半導体素子

Info

Publication number
JP2001237240A
JP2001237240A JP2000052080A JP2000052080A JP2001237240A JP 2001237240 A JP2001237240 A JP 2001237240A JP 2000052080 A JP2000052080 A JP 2000052080A JP 2000052080 A JP2000052080 A JP 2000052080A JP 2001237240 A JP2001237240 A JP 2001237240A
Authority
JP
Japan
Prior art keywords
film
dielectric constant
low dielectric
constant film
hardness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000052080A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001237240A5 (enExample
Inventor
Takenori Narita
武憲 成田
Shigeru Nobe
茂 野部
Haruaki Sakurai
治彰 桜井
Nobuko Terada
信子 寺田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP2000052080A priority Critical patent/JP2001237240A/ja
Publication of JP2001237240A publication Critical patent/JP2001237240A/ja
Publication of JP2001237240A5 publication Critical patent/JP2001237240A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP2000052080A 2000-02-23 2000-02-23 低誘電率膜及びこの低誘電率膜を有する半導体素子 Pending JP2001237240A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000052080A JP2001237240A (ja) 2000-02-23 2000-02-23 低誘電率膜及びこの低誘電率膜を有する半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000052080A JP2001237240A (ja) 2000-02-23 2000-02-23 低誘電率膜及びこの低誘電率膜を有する半導体素子

Publications (2)

Publication Number Publication Date
JP2001237240A true JP2001237240A (ja) 2001-08-31
JP2001237240A5 JP2001237240A5 (enExample) 2006-09-07

Family

ID=18573648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000052080A Pending JP2001237240A (ja) 2000-02-23 2000-02-23 低誘電率膜及びこの低誘電率膜を有する半導体素子

Country Status (1)

Country Link
JP (1) JP2001237240A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100508901B1 (ko) * 2002-04-18 2005-08-17 주식회사 엘지화학 유기실리케이트 중합체 및 이를 함유하는 절연막
KR100508902B1 (ko) * 2002-05-06 2005-08-17 주식회사 엘지화학 유기실리케이트 중합체 및 이를 함유하는 절연막
KR100508900B1 (ko) * 2002-04-18 2005-08-17 주식회사 엘지화학 유기실리케이트 중합체 및 이를 함유하는 절연막
US7345351B2 (en) 2003-04-09 2008-03-18 Lg Chem, Ltd. Coating composition for insulating film production, preparation method of insulation film by using the same, insulation film for semi-conductor device prepared therefrom, and semi-conductor device comprising the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100508901B1 (ko) * 2002-04-18 2005-08-17 주식회사 엘지화학 유기실리케이트 중합체 및 이를 함유하는 절연막
KR100508900B1 (ko) * 2002-04-18 2005-08-17 주식회사 엘지화학 유기실리케이트 중합체 및 이를 함유하는 절연막
KR100508902B1 (ko) * 2002-05-06 2005-08-17 주식회사 엘지화학 유기실리케이트 중합체 및 이를 함유하는 절연막
US7345351B2 (en) 2003-04-09 2008-03-18 Lg Chem, Ltd. Coating composition for insulating film production, preparation method of insulation film by using the same, insulation film for semi-conductor device prepared therefrom, and semi-conductor device comprising the same
US7648894B2 (en) 2003-04-09 2010-01-19 Lg Chem, Ltd. Coating composition for insulating film production, preparation method of insulation film by using the same, insulation film for semi-conductor device prepared therefrom, and semi-conductor device comprising the same

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