JP2001223386A - 窒化物半導体素子 - Google Patents

窒化物半導体素子

Info

Publication number
JP2001223386A
JP2001223386A JP2000038195A JP2000038195A JP2001223386A JP 2001223386 A JP2001223386 A JP 2001223386A JP 2000038195 A JP2000038195 A JP 2000038195A JP 2000038195 A JP2000038195 A JP 2000038195A JP 2001223386 A JP2001223386 A JP 2001223386A
Authority
JP
Japan
Prior art keywords
nitride semiconductor
conductive thin
thin film
semiconductor layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000038195A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001223386A5 (https=
Inventor
Tatsunori Toyoda
達憲 豊田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP2000038195A priority Critical patent/JP2001223386A/ja
Publication of JP2001223386A publication Critical patent/JP2001223386A/ja
Publication of JP2001223386A5 publication Critical patent/JP2001223386A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2000038195A 2000-02-10 2000-02-10 窒化物半導体素子 Pending JP2001223386A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000038195A JP2001223386A (ja) 2000-02-10 2000-02-10 窒化物半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000038195A JP2001223386A (ja) 2000-02-10 2000-02-10 窒化物半導体素子

Publications (2)

Publication Number Publication Date
JP2001223386A true JP2001223386A (ja) 2001-08-17
JP2001223386A5 JP2001223386A5 (https=) 2007-03-29

Family

ID=18561967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000038195A Pending JP2001223386A (ja) 2000-02-10 2000-02-10 窒化物半導体素子

Country Status (1)

Country Link
JP (1) JP2001223386A (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7679097B2 (en) 2004-10-21 2010-03-16 Nichia Corporation Semiconductor light emitting device and method for manufacturing the same
JP2012151415A (ja) * 2011-01-21 2012-08-09 Stanley Electric Co Ltd 半導体発光素子
JP2012169435A (ja) * 2011-02-14 2012-09-06 Stanley Electric Co Ltd 光半導体素子
US8569772B2 (en) 2009-07-20 2013-10-29 Samsung Electronics Co., Ltd. Light-emitting element and method of fabricating the same

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05299690A (ja) * 1992-04-16 1993-11-12 Nippon Sheet Glass Co Ltd 半導体発光素子
JPH09293936A (ja) * 1996-02-26 1997-11-11 Toshiba Corp 半導体装置
JPH11103135A (ja) * 1997-07-30 1999-04-13 Mitsubishi Cable Ind Ltd ＧａＮ系結晶成長用基板およびその用途
JPH11112107A (ja) * 1997-10-08 1999-04-23 Fuji Electric Co Ltd Ｉｉｉ 族窒化物半導体素子およびその製造方法
JPH11145057A (ja) * 1997-11-07 1999-05-28 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体基板の製造方法
JPH11186178A (ja) * 1997-12-22 1999-07-09 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体及びその製造方法
JPH11224969A (ja) * 1997-12-05 1999-08-17 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JPH11274642A (ja) * 1998-03-19 1999-10-08 Toshiba Corp 半導体発光素子及びその製造方法
JPH11284226A (ja) * 1998-03-27 1999-10-15 Sanken Electric Co Ltd 半導体発光素子
JPH11312840A (ja) * 1998-04-28 1999-11-09 Sharp Corp 半導体レーザ素子及びその製造方法
JP2000021789A (ja) * 1997-08-29 2000-01-21 Toshiba Corp 窒化物系半導体素子、発光素子及びその製造方法
JP2000031068A (ja) * 1998-07-14 2000-01-28 Mitsubishi Cable Ind Ltd ＧａＮ系結晶成長用基板

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05299690A (ja) * 1992-04-16 1993-11-12 Nippon Sheet Glass Co Ltd 半導体発光素子
JPH09293936A (ja) * 1996-02-26 1997-11-11 Toshiba Corp 半導体装置
JPH11103135A (ja) * 1997-07-30 1999-04-13 Mitsubishi Cable Ind Ltd ＧａＮ系結晶成長用基板およびその用途
JP2000021789A (ja) * 1997-08-29 2000-01-21 Toshiba Corp 窒化物系半導体素子、発光素子及びその製造方法
JPH11112107A (ja) * 1997-10-08 1999-04-23 Fuji Electric Co Ltd Ｉｉｉ 族窒化物半導体素子およびその製造方法
JPH11145057A (ja) * 1997-11-07 1999-05-28 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体基板の製造方法
JPH11224969A (ja) * 1997-12-05 1999-08-17 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JPH11186178A (ja) * 1997-12-22 1999-07-09 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体及びその製造方法
JPH11274642A (ja) * 1998-03-19 1999-10-08 Toshiba Corp 半導体発光素子及びその製造方法
JPH11284226A (ja) * 1998-03-27 1999-10-15 Sanken Electric Co Ltd 半導体発光素子
JPH11312840A (ja) * 1998-04-28 1999-11-09 Sharp Corp 半導体レーザ素子及びその製造方法
JP2000031068A (ja) * 1998-07-14 2000-01-28 Mitsubishi Cable Ind Ltd ＧａＮ系結晶成長用基板

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7679097B2 (en) 2004-10-21 2010-03-16 Nichia Corporation Semiconductor light emitting device and method for manufacturing the same
USRE44163E1 (en) 2004-10-21 2013-04-23 Nichia Corporation Semiconductor light emitting device and method for manufacturing the same
US8569772B2 (en) 2009-07-20 2013-10-29 Samsung Electronics Co., Ltd. Light-emitting element and method of fabricating the same
US8889448B2 (en) 2009-07-20 2014-11-18 Samsung Electronics Co., Ltd. Method of fabricating a light-emitting element
JP2012151415A (ja) * 2011-01-21 2012-08-09 Stanley Electric Co Ltd 半導体発光素子
JP2012169435A (ja) * 2011-02-14 2012-09-06 Stanley Electric Co Ltd 光半導体素子

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