JP2001210832A5 - - Google Patents
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- JP2001210832A5 JP2001210832A5 JP2000347343A JP2000347343A JP2001210832A5 JP 2001210832 A5 JP2001210832 A5 JP 2001210832A5 JP 2000347343 A JP2000347343 A JP 2000347343A JP 2000347343 A JP2000347343 A JP 2000347343A JP 2001210832 A5 JP2001210832 A5 JP 2001210832A5
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- JP
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000347343A JP4801249B2 (ja) | 1999-11-19 | 2000-11-14 | 半導体装置の作製方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33017499 | 1999-11-19 | ||
| JP11-330174 | 1999-11-19 | ||
| JP1999330174 | 1999-11-19 | ||
| JP2000347343A JP4801249B2 (ja) | 1999-11-19 | 2000-11-14 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001210832A JP2001210832A (ja) | 2001-08-03 |
| JP2001210832A5 true JP2001210832A5 (enExample) | 2007-12-27 |
| JP4801249B2 JP4801249B2 (ja) | 2011-10-26 |
Family
ID=26573434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000347343A Expired - Fee Related JP4801249B2 (ja) | 1999-11-19 | 2000-11-14 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4801249B2 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW495854B (en) | 2000-03-06 | 2002-07-21 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
| TW513753B (en) | 2000-03-27 | 2002-12-11 | Semiconductor Energy Lab | Semiconductor display device and manufacturing method thereof |
| JP5046452B2 (ja) | 2000-10-26 | 2012-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4954366B2 (ja) | 2000-11-28 | 2012-06-13 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2004031409A (ja) * | 2002-06-21 | 2004-01-29 | Sanyo Electric Co Ltd | 薄膜トランジスタの製造方法 |
| US7508034B2 (en) | 2002-09-25 | 2009-03-24 | Sharp Kabushiki Kaisha | Single-crystal silicon substrate, SOI substrate, semiconductor device, display device, and manufacturing method of semiconductor device |
| JP4872197B2 (ja) * | 2004-08-25 | 2012-02-08 | カシオ計算機株式会社 | 薄膜トランジスタパネル及びその製造方法 |
| KR100659758B1 (ko) | 2004-09-22 | 2006-12-19 | 삼성에스디아이 주식회사 | 박막트랜지스터 제조 방법 |
| JP2007258453A (ja) * | 2006-03-23 | 2007-10-04 | Toshiba Matsushita Display Technology Co Ltd | 薄膜トランジスタ、及びその製造方法 |
| JP2013054359A (ja) * | 2012-09-18 | 2013-03-21 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| US10338446B2 (en) * | 2014-12-16 | 2019-07-02 | Sharp Kabushiki Kaisha | Semiconductor device having low resistance source and drain regions |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2719252B2 (ja) * | 1991-08-26 | 1998-02-25 | シャープ株式会社 | 薄膜トランジスタ |
| JP3474604B2 (ja) * | 1993-05-25 | 2003-12-08 | 三菱電機株式会社 | 薄膜トランジスタおよびその製法 |
| JP3871736B2 (ja) * | 1996-06-25 | 2007-01-24 | 株式会社半導体エネルギー研究所 | 液晶表示装置及び撮影装置及び情報処理装置 |
| JPH10125928A (ja) * | 1996-10-23 | 1998-05-15 | Semiconductor Energy Lab Co Ltd | 半導体集積回路及びその作製方法 |
| JP3883706B2 (ja) * | 1998-07-31 | 2007-02-21 | シャープ株式会社 | エッチング方法、及び薄膜トランジスタマトリックス基板の製造方法 |
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2000
- 2000-11-14 JP JP2000347343A patent/JP4801249B2/ja not_active Expired - Fee Related