JP2001210832A5 - - Google Patents
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- JP2001210832A5 JP2001210832A5 JP2000347343A JP2000347343A JP2001210832A5 JP 2001210832 A5 JP2001210832 A5 JP 2001210832A5 JP 2000347343 A JP2000347343 A JP 2000347343A JP 2000347343 A JP2000347343 A JP 2000347343A JP 2001210832 A5 JP2001210832 A5 JP 2001210832A5
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000347343A JP4801249B2 (ja) | 1999-11-19 | 2000-11-14 | 半導体装置の作製方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11-330174 | 1999-11-19 | ||
JP33017499 | 1999-11-19 | ||
JP1999330174 | 1999-11-19 | ||
JP2000347343A JP4801249B2 (ja) | 1999-11-19 | 2000-11-14 | 半導体装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2001210832A JP2001210832A (ja) | 2001-08-03 |
JP2001210832A5 true JP2001210832A5 (ja) | 2007-12-27 |
JP4801249B2 JP4801249B2 (ja) | 2011-10-26 |
Family
ID=26573434
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000347343A Expired - Fee Related JP4801249B2 (ja) | 1999-11-19 | 2000-11-14 | 半導体装置の作製方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4801249B2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW495854B (en) | 2000-03-06 | 2002-07-21 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
JP5046452B2 (ja) | 2000-10-26 | 2012-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4954366B2 (ja) | 2000-11-28 | 2012-06-13 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2004031409A (ja) * | 2002-06-21 | 2004-01-29 | Sanyo Electric Co Ltd | 薄膜トランジスタの製造方法 |
US7508034B2 (en) | 2002-09-25 | 2009-03-24 | Sharp Kabushiki Kaisha | Single-crystal silicon substrate, SOI substrate, semiconductor device, display device, and manufacturing method of semiconductor device |
JP4872197B2 (ja) * | 2004-08-25 | 2012-02-08 | カシオ計算機株式会社 | 薄膜トランジスタパネル及びその製造方法 |
KR100659758B1 (ko) | 2004-09-22 | 2006-12-19 | 삼성에스디아이 주식회사 | 박막트랜지스터 제조 방법 |
JP2007258453A (ja) * | 2006-03-23 | 2007-10-04 | Toshiba Matsushita Display Technology Co Ltd | 薄膜トランジスタ、及びその製造方法 |
JP2013054359A (ja) * | 2012-09-18 | 2013-03-21 | Semiconductor Energy Lab Co Ltd | 表示装置 |
WO2016098651A1 (ja) * | 2014-12-16 | 2016-06-23 | シャープ株式会社 | 半導体装置、その製造方法、および半導体装置を備えた表示装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3883706B2 (ja) * | 1998-07-31 | 2007-02-21 | シャープ株式会社 | エッチング方法、及び薄膜トランジスタマトリックス基板の製造方法 |
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2000
- 2000-11-14 JP JP2000347343A patent/JP4801249B2/ja not_active Expired - Fee Related