JP2001196702A - Ｉｉｉ族窒化物系化合物半導体発光素子 - Google Patents
Ｉｉｉ族窒化物系化合物半導体発光素子Info
- Publication number
- JP2001196702A JP2001196702A JP2000002095A JP2000002095A JP2001196702A JP 2001196702 A JP2001196702 A JP 2001196702A JP 2000002095 A JP2000002095 A JP 2000002095A JP 2000002095 A JP2000002095 A JP 2000002095A JP 2001196702 A JP2001196702 A JP 2001196702A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- iii nitride
- compound semiconductor
- group iii
- nitride compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 55
- -1 nitride compound Chemical class 0.000 title claims description 40
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims description 20
- 238000005253 cladding Methods 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 14
- 150000004767 nitrides Chemical class 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 abstract description 22
- 229910052594 sapphire Inorganic materials 0.000 abstract description 15
- 239000010980 sapphire Substances 0.000 abstract description 15
- 230000004888 barrier function Effects 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 166
- 239000011777 magnesium Substances 0.000 description 35
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 22
- 229910002601 GaN Inorganic materials 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 229910052749 magnesium Inorganic materials 0.000 description 15
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 14
- 238000005530 etching Methods 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 229910021480 group 4 element Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910007541 Zn O Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910021476 group 6 element Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000002095A JP2001196702A (ja) | 2000-01-11 | 2000-01-11 | Ｉｉｉ族窒化物系化合物半導体発光素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000002095A JP2001196702A (ja) | 2000-01-11 | 2000-01-11 | Ｉｉｉ族窒化物系化合物半導体発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001196702A true JP2001196702A (ja) | 2001-07-19 |
| JP2001196702A5 JP2001196702A5 (OSRAM) | 2006-11-30 |
Family
ID=18531241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000002095A Withdrawn JP2001196702A (ja) | 2000-01-11 | 2000-01-11 | Ｉｉｉ族窒化物系化合物半導体発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001196702A (OSRAM) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006344930A (ja) * | 2005-04-07 | 2006-12-21 | Showa Denko Kk | Ｉｉｉ族窒化物半導体素子の製造方法 |
| CN100356593C (zh) * | 2004-03-30 | 2007-12-19 | 晶元光电股份有限公司 | 高效率氮化物系发光元件 |
| US7674643B2 (en) | 2003-12-24 | 2010-03-09 | Samsung Electro-Mechanics Co., Ltd. | Gallium nitride semiconductor light emitting device and method of manufacturing the same |
| US7700384B2 (en) | 2006-02-20 | 2010-04-20 | Sharp Kabushiki Kaisha | Nitride semiconductor light emitting device and manufacturing method thereof |
| US8211726B2 (en) * | 2006-02-27 | 2012-07-03 | Sharp Kabushiki Kaisha | Method of manufacturing nitride semiconductor light emitting device |
| EP1869717A4 (en) * | 2005-04-07 | 2012-07-25 | Showa Denko Kk | METHOD OF MANUFACTURING A GROUP III NITRIDE SEMICONDUCTOR ELEMENT |
| CN103165773A (zh) * | 2011-12-15 | 2013-06-19 | 日立电线株式会社 | 氮化物半导体模板和发光二极管 |
| US9263639B2 (en) | 2013-07-25 | 2016-02-16 | Toyoda Gosei Co., Ltd. | Group III nitride semiconductor light-emitting device |
| US9437776B2 (en) | 2008-03-31 | 2016-09-06 | Toshiba Corporation | Method for manufacturing light emitting diodes with smooth surface for reflective electrode |
| JP2023108178A (ja) * | 2022-01-25 | 2023-08-04 | 日機装株式会社 | 窒化物半導体発光素子の製造方法 |
-
2000
- 2000-01-11 JP JP2000002095A patent/JP2001196702A/ja not_active Withdrawn
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7674643B2 (en) | 2003-12-24 | 2010-03-09 | Samsung Electro-Mechanics Co., Ltd. | Gallium nitride semiconductor light emitting device and method of manufacturing the same |
| JP2010098336A (ja) * | 2003-12-24 | 2010-04-30 | Samsung Electro-Mechanics Co Ltd | ＧａＮ半導体発光素子及びその製造方法 |
| CN100356593C (zh) * | 2004-03-30 | 2007-12-19 | 晶元光电股份有限公司 | 高效率氮化物系发光元件 |
| EP1869717A4 (en) * | 2005-04-07 | 2012-07-25 | Showa Denko Kk | METHOD OF MANUFACTURING A GROUP III NITRIDE SEMICONDUCTOR ELEMENT |
| JP2006344930A (ja) * | 2005-04-07 | 2006-12-21 | Showa Denko Kk | Ｉｉｉ族窒化物半導体素子の製造方法 |
| US7700384B2 (en) | 2006-02-20 | 2010-04-20 | Sharp Kabushiki Kaisha | Nitride semiconductor light emitting device and manufacturing method thereof |
| US8211726B2 (en) * | 2006-02-27 | 2012-07-03 | Sharp Kabushiki Kaisha | Method of manufacturing nitride semiconductor light emitting device |
| US9437776B2 (en) | 2008-03-31 | 2016-09-06 | Toshiba Corporation | Method for manufacturing light emitting diodes with smooth surface for reflective electrode |
| CN103165773A (zh) * | 2011-12-15 | 2013-06-19 | 日立电线株式会社 | 氮化物半导体模板和发光二极管 |
| US9263639B2 (en) | 2013-07-25 | 2016-02-16 | Toyoda Gosei Co., Ltd. | Group III nitride semiconductor light-emitting device |
| JP2023108178A (ja) * | 2022-01-25 | 2023-08-04 | 日機装株式会社 | 窒化物半導体発光素子の製造方法 |
| JP7340047B2 (ja) | 2022-01-25 | 2023-09-06 | 日機装株式会社 | 窒化物半導体発光素子の製造方法 |
| US12446357B2 (en) | 2022-01-25 | 2025-10-14 | Nikkiso Co., Ltd. | Method for manufacturing nitride semiconductor light-emitting element |
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