JP2001185354A5 - - Google Patents

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Publication number
JP2001185354A5
JP2001185354A5 JP2000308742A JP2000308742A JP2001185354A5 JP 2001185354 A5 JP2001185354 A5 JP 2001185354A5 JP 2000308742 A JP2000308742 A JP 2000308742A JP 2000308742 A JP2000308742 A JP 2000308742A JP 2001185354 A5 JP2001185354 A5 JP 2001185354A5
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JP
Japan
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JP2000308742A
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Japanese (ja)
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JP4780826B2 (ja
JP2001185354A (ja
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Priority to JP2000308742A priority Critical patent/JP4780826B2/ja
Priority claimed from JP2000308742A external-priority patent/JP4780826B2/ja
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Publication of JP2001185354A5 publication Critical patent/JP2001185354A5/ja
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Publication of JP4780826B2 publication Critical patent/JP4780826B2/ja
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Expired - Lifetime legal-status Critical Current

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JP2000308742A 1999-10-12 2000-10-10 電気光学装置の作製方法 Expired - Lifetime JP4780826B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000308742A JP4780826B2 (ja) 1999-10-12 2000-10-10 電気光学装置の作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1999290314 1999-10-12
JP29031499 1999-10-12
JP11-290314 1999-10-12
JP2000308742A JP4780826B2 (ja) 1999-10-12 2000-10-10 電気光学装置の作製方法

Publications (3)

Publication Number Publication Date
JP2001185354A JP2001185354A (ja) 2001-07-06
JP2001185354A5 true JP2001185354A5 (enrdf_load_stackoverflow) 2007-11-08
JP4780826B2 JP4780826B2 (ja) 2011-09-28

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Family Applications (1)

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JP2000308742A Expired - Lifetime JP4780826B2 (ja) 1999-10-12 2000-10-10 電気光学装置の作製方法

Country Status (1)

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JP (1) JP4780826B2 (enrdf_load_stackoverflow)

Cited By (3)

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US8216875B2 (en) 2003-09-26 2012-07-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
US8420227B2 (en) 2005-03-23 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Composite material, light emitting element and light emitting device
US8994007B2 (en) 2003-10-03 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Light emitting element and manufacturing method thereof, and light emitting device using the light emitting element

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JP4789341B2 (ja) * 2001-03-30 2011-10-12 三洋電機株式会社 半導体装置及び半導体装置製造用マスク
TW548860B (en) 2001-06-20 2003-08-21 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
US7211828B2 (en) 2001-06-20 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic apparatus
JP5202673B2 (ja) * 2001-07-27 2013-06-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7488986B2 (en) * 2001-10-26 2009-02-10 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP3825395B2 (ja) * 2001-10-30 2006-09-27 株式会社半導体エネルギー研究所 発光装置および電気器具
US6956240B2 (en) 2001-10-30 2005-10-18 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7483001B2 (en) 2001-11-21 2009-01-27 Seiko Epson Corporation Active matrix substrate, electro-optical device, and electronic device
TWI264121B (en) 2001-11-30 2006-10-11 Semiconductor Energy Lab A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device
SG126714A1 (en) * 2002-01-24 2006-11-29 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
JP2003264067A (ja) * 2002-03-07 2003-09-19 Ricoh Co Ltd 機能性素子基板、その製造装置、画像表示装置および画像表示システム
JP4481292B2 (ja) * 2002-03-13 2010-06-16 株式会社リコー 機能性素子基板の製造装置及び方法
US7148508B2 (en) 2002-03-20 2006-12-12 Seiko Epson Corporation Wiring substrate, electronic device, electro-optical device, and electronic apparatus
JP4217428B2 (ja) 2002-05-31 2009-02-04 キヤノン株式会社 表示装置
WO2004057920A1 (ja) 2002-12-19 2004-07-08 Semiconductor Energy Laboratory Co., Ltd. 表示装置及び表示装置の作製方法
JP2005032704A (ja) * 2003-06-18 2005-02-03 Sharp Corp 表示素子および表示装置
CN101673808B (zh) 2003-12-26 2012-05-23 株式会社半导体能源研究所 发光元件
JP2006295104A (ja) 2004-07-23 2006-10-26 Semiconductor Energy Lab Co Ltd 発光素子およびそれを用いた発光装置
US20070262693A1 (en) 2004-10-29 2007-11-15 Satoshi Seo Composite Material, Light-Emitting Element, Light-Emitting Device and Manufacturing Method Thereof
JP2006201423A (ja) 2005-01-20 2006-08-03 Seiko Epson Corp 色要素付き基板、成膜方法、電気光学装置および電子機器
US7851989B2 (en) 2005-03-25 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
EP1724852A3 (en) 2005-05-20 2010-01-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device
JP4613700B2 (ja) * 2005-06-01 2011-01-19 セイコーエプソン株式会社 電気光学装置及び電子機器
JP2006344545A (ja) * 2005-06-10 2006-12-21 Toppan Printing Co Ltd 有機ｅｌ素子の製造方法および有機ｅｌ素子
US8017252B2 (en) 2005-06-22 2011-09-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic appliance using the same
US7745989B2 (en) 2005-06-30 2010-06-29 Semiconductor Energy Laboratory Co., Ltd Light emitting element, light emitting device, and electronic apparatus
JP5024021B2 (ja) 2007-12-18 2012-09-12 セイコーエプソン株式会社 発光装置及び電子機器
JP4650495B2 (ja) * 2008-02-05 2011-03-16 セイコーエプソン株式会社 発光装置及び電子機器
JP2010153365A (ja) 2008-11-19 2010-07-08 Semiconductor Energy Lab Co Ltd 発光素子、発光装置、電子機器及び照明装置
US8093803B2 (en) 2009-03-17 2012-01-10 Seiko Epson Corporation Electro-optical device, electronic device, and method for manufacturing electro-optical device
JP5545970B2 (ja) * 2009-03-26 2014-07-09 株式会社半導体エネルギー研究所 発光装置及びその作製方法
US8404500B2 (en) 2009-11-02 2013-03-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting element, light-emitting element, light-emitting device, lighting device, and electronic appliance
JP5969216B2 (ja) 2011-02-11 2016-08-17 株式会社半導体エネルギー研究所 発光素子、表示装置、照明装置、及びこれらの作製方法
JP2017004950A (ja) * 2015-06-15 2017-01-05 住友化学株式会社 有機ｅｌ素子の製造方法
JP2017188478A (ja) * 2017-06-19 2017-10-12 株式会社半導体エネルギー研究所 発光装置
JP2019149385A (ja) * 2019-05-29 2019-09-05 株式会社半導体エネルギー研究所 発光装置
JP2019149384A (ja) * 2019-05-29 2019-09-05 株式会社半導体エネルギー研究所 発光装置
CN117813915A (zh) 2021-08-12 2024-04-02 株式会社半导体能源研究所 显示装置及显示装置的制造方法

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JP3180978B2 (ja) * 1992-01-21 2001-07-03 京セラ株式会社 光磁気記録素子
JPH05315360A (ja) * 1992-05-08 1993-11-26 Fuji Xerox Co Ltd 薄膜トランジスタの製造方法
JP2677167B2 (ja) * 1993-07-08 1997-11-17 日本電気株式会社 駆動回路内蔵型液晶表示装置の製造方法
TW345654B (en) * 1995-02-15 1998-11-21 Handotai Energy Kenkyusho Kk Active matrix display device
JP3111024B2 (ja) * 1995-07-19 2000-11-20 キヤノン株式会社 カラーフィルタの製造装置及び製造方法及び表示装置の製造方法及び表示装置を備えた装置の製造方法
JP3383535B2 (ja) * 1995-12-14 2003-03-04 株式会社半導体エネルギー研究所 半導体装置
JP3786427B2 (ja) * 1996-09-19 2006-06-14 セイコーエプソン株式会社 発光装置の製造方法
JPH10107266A (ja) * 1996-09-27 1998-04-24 New Japan Radio Co Ltd Ｍｏｓ型ｆｅｔの製造方法
JPH10275682A (ja) * 1997-02-03 1998-10-13 Nec Corp 有機ｅｌ素子
JP3830238B2 (ja) * 1997-08-29 2006-10-04 セイコーエプソン株式会社 アクティブマトリクス型装置
JPH11231805A (ja) * 1998-02-10 1999-08-27 Sanyo Electric Co Ltd 表示装置
WO1999048339A1 (en) * 1998-03-17 1999-09-23 Seiko Epson Corporation Substrate for patterning thin film and surface treatment thereof
JPH11273855A (ja) * 1998-03-25 1999-10-08 Tdk Corp 有機ｅｌ表示器

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8216875B2 (en) 2003-09-26 2012-07-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
US8994007B2 (en) 2003-10-03 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Light emitting element and manufacturing method thereof, and light emitting device using the light emitting element
US8420227B2 (en) 2005-03-23 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Composite material, light emitting element and light emitting device

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