JP2001176795A5 - - Google Patents
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- JP2001176795A5 JP2001176795A5 JP2000368421A JP2000368421A JP2001176795A5 JP 2001176795 A5 JP2001176795 A5 JP 2001176795A5 JP 2000368421 A JP2000368421 A JP 2000368421A JP 2000368421 A JP2000368421 A JP 2000368421A JP 2001176795 A5 JP2001176795 A5 JP 2001176795A5
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- JP
- Japan
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/452,878 US6503693B1 (en) | 1999-12-02 | 1999-12-02 | UV assisted chemical modification of photoresist |
| US09/452878 | 1999-12-02 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001176795A JP2001176795A (ja) | 2001-06-29 |
| JP2001176795A5 true JP2001176795A5 (enExample) | 2008-01-24 |
| JP4805448B2 JP4805448B2 (ja) | 2011-11-02 |
Family
ID=23798317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000368421A Expired - Fee Related JP4805448B2 (ja) | 1999-12-02 | 2000-12-04 | フォトレジストのｕｖ支援による化学的修飾 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6503693B1 (enExample) |
| EP (1) | EP1117008A3 (enExample) |
| JP (1) | JP4805448B2 (enExample) |
| KR (1) | KR100563242B1 (enExample) |
| TW (1) | TWI261735B (enExample) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6582891B1 (en) * | 1999-12-02 | 2003-06-24 | Axcelis Technologies, Inc. | Process for reducing edge roughness in patterned photoresist |
| US20030008968A1 (en) * | 2001-07-05 | 2003-01-09 | Yoshiki Sugeta | Method for reducing pattern dimension in photoresist layer |
| DE10154966A1 (de) * | 2001-10-31 | 2003-05-22 | Infineon Technologies Ag | Verfahren zur Herstellung einer Halbleitervorrichtung |
| US7060617B2 (en) * | 2002-06-28 | 2006-06-13 | Intel Corporation | Method of protecting a seed layer for electroplating |
| US8564780B2 (en) * | 2003-01-16 | 2013-10-22 | Jordan Valley Semiconductors Ltd. | Method and system for using reflectometry below deep ultra-violet (DUV) wavelengths for measuring properties of diffracting or scattering structures on substrate work pieces |
| US6730458B1 (en) * | 2003-03-03 | 2004-05-04 | Samsung Electronics Co., Ltd. | Method for forming fine patterns through effective glass transition temperature reduction |
| JP4150660B2 (ja) * | 2003-12-16 | 2008-09-17 | 松下電器産業株式会社 | パターン形成方法 |
| US7258965B2 (en) * | 2003-12-30 | 2007-08-21 | Intel Corporation | Pre-exposure of patterned photoresist films to achieve critical dimension reduction during temperature reflow |
| US20050250346A1 (en) * | 2004-05-06 | 2005-11-10 | Applied Materials, Inc. | Process and apparatus for post deposition treatment of low k dielectric materials |
| US20050279453A1 (en) * | 2004-06-17 | 2005-12-22 | Uvtech Systems, Inc. | System and methods for surface cleaning |
| US20060096081A1 (en) * | 2004-06-30 | 2006-05-11 | Hitachi Global Storage Technologies | Methods of making magnetic write heads with use of a resist channel shrinking solution having corrosion inhibitors |
| US7343666B2 (en) | 2004-06-30 | 2008-03-18 | Hitachi Global Storage Technologies Netherlands B.V. | Methods of making magnetic write heads with use of linewidth shrinkage techniques |
| US7395595B2 (en) * | 2005-04-19 | 2008-07-08 | Hitachi Global Storage Technologies Netherlands B.V. | Method for manufacturing P3 layer of a perpendicular magnetic write head |
| US20060249175A1 (en) * | 2005-05-09 | 2006-11-09 | Applied Materials, Inc. | High efficiency UV curing system |
| US20060251827A1 (en) * | 2005-05-09 | 2006-11-09 | Applied Materials, Inc. | Tandem uv chamber for curing dielectric materials |
| JP4530980B2 (ja) * | 2005-08-26 | 2010-08-25 | 東京応化工業株式会社 | 膜形成用材料およびパターン形成方法 |
| US7396482B2 (en) * | 2005-10-28 | 2008-07-08 | Infineon Technologies Ag | Post exposure resist bake |
| US20080296258A1 (en) * | 2007-02-08 | 2008-12-04 | Elliott David J | Plenum reactor system |
| TWI460535B (zh) * | 2007-03-12 | 2014-11-11 | 羅門哈斯電子材料有限公司 | 酚系聚合物及含該酚系聚合物之光阻 |
| JP5448536B2 (ja) * | 2009-04-08 | 2014-03-19 | 東京エレクトロン株式会社 | レジスト塗布現像装置およびレジスト塗布現像方法、並びにレジスト膜処理装置およびレジスト膜処理方法 |
| JP5193121B2 (ja) * | 2009-04-17 | 2013-05-08 | 東京エレクトロン株式会社 | レジスト塗布現像方法 |
| JP5704093B2 (ja) * | 2011-03-01 | 2015-04-22 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法並びに記憶媒体 |
| KR20130120586A (ko) * | 2012-04-26 | 2013-11-05 | 삼성전자주식회사 | 패턴 형성 방법 |
| US9875916B2 (en) * | 2012-07-09 | 2018-01-23 | Tokyo Electron Limited | Method of stripping photoresist on a single substrate system |
| US9966280B2 (en) | 2012-10-05 | 2018-05-08 | Tokyo Electron Limited | Process gas generation for cleaning of substrates |
| US10249509B2 (en) | 2012-11-09 | 2019-04-02 | Tokyo Electron Limited | Substrate cleaning method and system using atmospheric pressure atomic oxygen |
| TWI526257B (zh) * | 2012-11-27 | 2016-03-21 | 東京威力科創股份有限公司 | 使用噴嘴清洗基板上之一層的控制 |
| JP6145065B2 (ja) * | 2014-03-19 | 2017-06-07 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置及び記録媒体 |
| CN106662816B (zh) * | 2014-07-08 | 2020-10-23 | 东京毅力科创株式会社 | 负性显影剂相容性的光致抗蚀剂组合物及使用方法 |
| US9520270B2 (en) * | 2014-07-25 | 2016-12-13 | Tokyo Eelctron Limited | Direct current superposition curing for resist reflow temperature enhancement |
| JP6239466B2 (ja) * | 2014-08-15 | 2017-11-29 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
| JP7039865B2 (ja) * | 2017-05-26 | 2022-03-23 | 大日本印刷株式会社 | パターン形成方法、凹凸構造体の製造方法、レプリカモールドの製造方法、レジストパターン改質装置及びパターン形成システム |
| US20230130753A1 (en) * | 2021-10-27 | 2023-04-27 | Meta Platforms Technologies, Llc | Gray-tone resists and processes |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3873319A (en) * | 1974-01-31 | 1975-03-25 | Minnesota Mining & Mfg | Dry-film negative photoresist having amidized styrene-maleic anhydride binder material |
| US4125650A (en) * | 1977-08-08 | 1978-11-14 | International Business Machines Corporation | Resist image hardening process |
| JPS58157135A (ja) * | 1982-03-15 | 1983-09-19 | Matsushita Electric Ind Co Ltd | パタ−ン形成方法 |
| US4548688A (en) * | 1983-05-23 | 1985-10-22 | Fusion Semiconductor Systems | Hardening of photoresist |
| JPS60169852A (ja) * | 1984-02-14 | 1985-09-03 | Fuji Photo Film Co Ltd | 湿し水不要ネガ型感光性平版印刷版の製版法 |
| US4603058A (en) * | 1984-10-05 | 1986-07-29 | Macdermid, Incorporated | Post-treatment of cured, radiation sensitive, polymerizable resins to eliminate surface tack |
| CA1282273C (en) * | 1985-03-19 | 1991-04-02 | International Business Machines Corporation | Method of creating patterned multilayer films for use in production of semiconductor circuits and systems |
| JPH01123232A (ja) * | 1987-11-09 | 1989-05-16 | Mitsubishi Electric Corp | パターン形成方法 |
| JPH0249416A (ja) * | 1988-08-10 | 1990-02-19 | Sanyo Electric Co Ltd | 微細パターンの形成方法 |
| JP2610337B2 (ja) * | 1989-02-25 | 1997-05-14 | 富士通株式会社 | パターン形成方法 |
| US5275920A (en) * | 1989-04-24 | 1994-01-04 | Siemens Aktiengesellschaft | Method of dry development utilizing quinone diazide and basic polymer resist with latent image intensification through treatment with silicon-organic compound in water |
| ES2103261T3 (es) * | 1989-04-24 | 1997-09-16 | Siemens Ag | Procedimiento para la generacion de estructuras resistentes a la corrosion. |
| US5023164A (en) * | 1989-10-23 | 1991-06-11 | International Business Machines Corporation | Highly sensitive dry developable deep UV photoresist |
| JP3057879B2 (ja) * | 1992-02-28 | 2000-07-04 | 株式会社日立製作所 | 半導体装置の製造方法 |
| JPH06116305A (ja) * | 1992-10-07 | 1994-04-26 | Toray Ind Inc | 薄膜の製造方法 |
| JPH06214402A (ja) * | 1992-10-30 | 1994-08-05 | Matsushita Electric Ind Co Ltd | 微細パターン形成方法 |
| US5347040A (en) * | 1992-12-09 | 1994-09-13 | E. I. Du Pont De Nemours And Company | Sensitized onium salts |
| JP3340493B2 (ja) * | 1993-02-26 | 2002-11-05 | 沖電気工業株式会社 | パターン形成方法、位相シフト法用ホトマスクの形成方法 |
| KR970076073A (ko) * | 1996-05-11 | 1997-12-10 | 김광호 | 반도체장치의 포토레지스트 패턴 형성방법 |
| JP3071401B2 (ja) * | 1996-07-05 | 2000-07-31 | 三菱電機株式会社 | 微細パターン形成材料及びこれを用いた半導体装置の製造方法並びに半導体装置 |
| TW329539B (en) * | 1996-07-05 | 1998-04-11 | Mitsubishi Electric Corp | The semiconductor device and its manufacturing method |
| TW353775B (en) * | 1996-11-27 | 1999-03-01 | Tokyo Electron Ltd | Production of semiconductor device |
| KR100244516B1 (ko) * | 1996-11-29 | 2000-03-02 | 전주범 | 패턴 형성 방법 |
| JPH10246959A (ja) * | 1997-03-05 | 1998-09-14 | Mitsubishi Electric Corp | レジストパターン形成方法およびレジスト材料 |
| TW372337B (en) * | 1997-03-31 | 1999-10-21 | Mitsubishi Electric Corp | Material for forming micropattern and manufacturing method of semiconductor using the material and semiconductor apparatus |
| US6057084A (en) | 1997-10-03 | 2000-05-02 | Fusion Systems Corporation | Controlled amine poisoning for reduced shrinkage of features formed in photoresist |
| JP3189773B2 (ja) * | 1998-01-09 | 2001-07-16 | 三菱電機株式会社 | レジストパターン形成方法及びこれを用いた半導体装置の製造方法並びに半導体装置 |
| JPH11202501A (ja) * | 1998-01-14 | 1999-07-30 | Mitsubishi Electric Corp | ディープｕｖキュアープロセスにおける寸法制御法 |
-
1999
- 1999-12-02 US US09/452,878 patent/US6503693B1/en not_active Expired - Fee Related
-
2000
- 2000-11-22 TW TW089124713A patent/TWI261735B/zh active
- 2000-11-30 EP EP00310639A patent/EP1117008A3/en not_active Withdrawn
- 2000-12-02 KR KR1020000072700A patent/KR100563242B1/ko not_active Expired - Fee Related
- 2000-12-04 JP JP2000368421A patent/JP4805448B2/ja not_active Expired - Fee Related