JP2001142224A5 - - Google Patents

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Publication number
JP2001142224A5
JP2001142224A5 JP2000258450A JP2000258450A JP2001142224A5 JP 2001142224 A5 JP2001142224 A5 JP 2001142224A5 JP 2000258450 A JP2000258450 A JP 2000258450A JP 2000258450 A JP2000258450 A JP 2000258450A JP 2001142224 A5 JP2001142224 A5 JP 2001142224A5
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JP
Japan
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JP2000258450A
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JP4628531B2 (ja
JP2001142224A (ja
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Priority to JP2000258450A priority Critical patent/JP4628531B2/ja
Priority claimed from JP2000258450A external-priority patent/JP4628531B2/ja
Publication of JP2001142224A publication Critical patent/JP2001142224A/ja
Publication of JP2001142224A5 publication Critical patent/JP2001142224A5/ja
Application granted granted Critical
Publication of JP4628531B2 publication Critical patent/JP4628531B2/ja
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Expired - Fee Related legal-status Critical Current

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JP2000258450A 1999-08-31 2000-08-29 半導体装置の作製方法 Expired - Fee Related JP4628531B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000258450A JP4628531B2 (ja) 1999-08-31 2000-08-29 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP24657299 1999-08-31
JP11-246572 1999-08-31
JP2000258450A JP4628531B2 (ja) 1999-08-31 2000-08-29 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2001142224A JP2001142224A (ja) 2001-05-25
JP2001142224A5 true JP2001142224A5 (ja) 2007-10-25
JP4628531B2 JP4628531B2 (ja) 2011-02-09

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ID=26537798

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000258450A Expired - Fee Related JP4628531B2 (ja) 1999-08-31 2000-08-29 半導体装置の作製方法

Country Status (1)

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JP (1) JP4628531B2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1720484B (zh) * 2002-12-06 2010-05-05 东京应化工业株式会社 Lcd制造用正型光致抗蚀剂组合物和抗蚀图的形成方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4634673B2 (ja) * 2001-09-26 2011-02-16 シャープ株式会社 液晶表示装置及びその製造方法
US6872658B2 (en) 2001-11-30 2005-03-29 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device by exposing resist mask
JP2004342833A (ja) 2003-05-15 2004-12-02 Seiko Epson Corp 半導体装置の製造方法、電気光学装置、集積回路及び電子機器。
JP2005072573A (ja) * 2003-08-05 2005-03-17 Semiconductor Energy Lab Co Ltd 配線基板及びその作製方法、並びに半導体装置及びその作製方法
US7423343B2 (en) 2003-08-05 2008-09-09 Semiconductor Energy Laboratory Co., Ltd. Wiring board, manufacturing method thereof, semiconductor device and manufacturing method thereof
JP5398158B2 (ja) * 2008-03-27 2014-01-29 三菱電機株式会社 パターン形成方法、及び配線構造、並びに電子機器
JP6240443B2 (ja) * 2012-09-17 2017-11-29 シチズンファインデバイス株式会社 液晶表示装置
WO2016093122A1 (ja) * 2014-12-09 2016-06-16 シャープ株式会社 表示パネル用基板の製造方法
JP6650719B2 (ja) 2015-09-30 2020-02-19 キヤノン株式会社 撮像装置、撮像システムおよび半導体装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50159267A (ja) * 1974-06-12 1975-12-23
JPS6473616A (en) * 1987-09-14 1989-03-17 Nec Corp Manufacture of semiconductor device
JPH01134919A (ja) * 1987-11-19 1989-05-26 Nec Corp 光学投影露光装置
JPH08236433A (ja) * 1994-12-28 1996-09-13 Nikon Corp 露光方法
JP3892565B2 (ja) * 1997-02-28 2007-03-14 株式会社東芝 パターン形成方法
JP3101594B2 (ja) * 1997-11-06 2000-10-23 キヤノン株式会社 露光方法及び露光装置
JP3535770B2 (ja) * 1998-06-29 2004-06-07 キヤノン株式会社 露光方法及び露光装置
JP2000347416A (ja) * 1999-03-31 2000-12-15 Seiko Epson Corp 露光装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1720484B (zh) * 2002-12-06 2010-05-05 东京应化工业株式会社 Lcd制造用正型光致抗蚀剂组合物和抗蚀图的形成方法

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