JP2001125138A5 - - Google Patents

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Publication number
JP2001125138A5
JP2001125138A5 JP1999302778A JP30277899A JP2001125138A5 JP 2001125138 A5 JP2001125138 A5 JP 2001125138A5 JP 1999302778 A JP1999302778 A JP 1999302778A JP 30277899 A JP30277899 A JP 30277899A JP 2001125138 A5 JP2001125138 A5 JP 2001125138A5
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JP
Japan
Prior art keywords
substrate
liquid crystal
crystal display
display device
thin film
Prior art date
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Granted
Application number
JP1999302778A
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English (en)
Japanese (ja)
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JP2001125138A (ja
JP3911929B2 (ja
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Priority to JP30277899A priority Critical patent/JP3911929B2/ja
Priority claimed from JP30277899A external-priority patent/JP3911929B2/ja
Publication of JP2001125138A publication Critical patent/JP2001125138A/ja
Publication of JP2001125138A5 publication Critical patent/JP2001125138A5/ja
Application granted granted Critical
Publication of JP3911929B2 publication Critical patent/JP3911929B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP30277899A 1999-10-25 1999-10-25 液晶表示装置の製造方法 Expired - Fee Related JP3911929B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30277899A JP3911929B2 (ja) 1999-10-25 1999-10-25 液晶表示装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30277899A JP3911929B2 (ja) 1999-10-25 1999-10-25 液晶表示装置の製造方法

Publications (3)

Publication Number Publication Date
JP2001125138A JP2001125138A (ja) 2001-05-11
JP2001125138A5 true JP2001125138A5 (fr) 2005-04-07
JP3911929B2 JP3911929B2 (ja) 2007-05-09

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ID=17913016

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30277899A Expired - Fee Related JP3911929B2 (ja) 1999-10-25 1999-10-25 液晶表示装置の製造方法

Country Status (1)

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JP (1) JP3911929B2 (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW564471B (en) 2001-07-16 2003-12-01 Semiconductor Energy Lab Semiconductor device and peeling off method and method of manufacturing semiconductor device
US7351300B2 (en) 2001-08-22 2008-04-01 Semiconductor Energy Laboratory Co., Ltd. Peeling method and method of manufacturing semiconductor device
US6953735B2 (en) 2001-12-28 2005-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device by transferring a layer to a support with curvature
JP4186502B2 (ja) * 2002-04-22 2008-11-26 ソニー株式会社 薄膜デバイスの製造方法、薄膜デバイスおよび表示装置
JP3965562B2 (ja) * 2002-04-22 2007-08-29 セイコーエプソン株式会社 デバイスの製造方法、デバイス、電気光学装置及び電子機器
DE60325669D1 (de) 2002-05-17 2009-02-26 Semiconductor Energy Lab Verfahren zum Transferieren eines Objekts und Verfahren zur Herstellung eines Halbleiterbauelements
US7183582B2 (en) 2002-05-29 2007-02-27 Seiko Epson Coporation Electro-optical device and method of manufacturing the same, element driving device and method of manufacturing the same, element substrate, and electronic apparatus
KR101005569B1 (ko) 2002-12-27 2011-01-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제조방법
JP4373085B2 (ja) 2002-12-27 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法、剥離方法及び転写方法
WO2004064018A1 (fr) 2003-01-15 2004-07-29 Semiconductor Energy Laboratory Co., Ltd. Procede de separation et procede de fabrication de dispositif d'affichage comprenant l'utilisation de ce procede de separation
JP4151420B2 (ja) 2003-01-23 2008-09-17 セイコーエプソン株式会社 デバイスの製造方法
JP2004349513A (ja) 2003-05-22 2004-12-09 Seiko Epson Corp 薄膜回路装置及びその製造方法、並びに電気光学装置、電子機器
FR2870988B1 (fr) * 2004-06-01 2006-08-11 Michel Bruel Procede de realisation d'une structure multi-couches comportant, en profondeur, une couche de separation
JP2004341557A (ja) * 2004-08-23 2004-12-02 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2006120726A (ja) 2004-10-19 2006-05-11 Seiko Epson Corp 薄膜装置の製造方法、電気光学装置、及び電子機器
US7972910B2 (en) 2005-06-03 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of integrated circuit device including thin film transistor
US7820495B2 (en) 2005-06-30 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP4610515B2 (ja) * 2006-04-21 2011-01-12 株式会社半導体エネルギー研究所 剥離方法
JP4894415B2 (ja) * 2006-08-25 2012-03-14 凸版印刷株式会社 液晶表示装置の製造方法
US7968388B2 (en) 2007-08-31 2011-06-28 Seiko Epson Corporation Thin-film device, method for manufacturing thin-film device, and display
JP2016038490A (ja) * 2014-08-08 2016-03-22 株式会社半導体エネルギー研究所 表示パネル、表示モジュール、及び電子機器

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2929704B2 (ja) * 1990-11-01 1999-08-03 松下電器産業株式会社 液晶表示用基板の製造方法
FR2679057B1 (fr) * 1991-07-11 1995-10-20 Morin Francois Structure d'ecran a cristal liquide, a matrice active et a haute definition.
JPH09197405A (ja) * 1995-11-14 1997-07-31 Sharp Corp 視角特性制御型液晶表示装置
JPH1126733A (ja) * 1997-07-03 1999-01-29 Seiko Epson Corp 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置，アクティブマトリクス基板、液晶表示装置および電子機器
JPH11243209A (ja) * 1998-02-25 1999-09-07 Seiko Epson Corp 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置、アクティブマトリクス基板、液晶表示装置および電子機器

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