JP2001115267A - プラズマ処理装置及び処理方法 - Google Patents

プラズマ処理装置及び処理方法

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Publication number
JP2001115267A
JP2001115267A JP29706499A JP29706499A JP2001115267A JP 2001115267 A JP2001115267 A JP 2001115267A JP 29706499 A JP29706499 A JP 29706499A JP 29706499 A JP29706499 A JP 29706499A JP 2001115267 A JP2001115267 A JP 2001115267A
Authority
JP
Japan
Prior art keywords
plasma processing
substrate
plasma
processing chamber
conductance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP29706499A
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English (en)
Japanese (ja)
Other versions
JP2001115267A5 (enExample
Inventor
Nobumasa Suzuki
伸昌 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP29706499A priority Critical patent/JP2001115267A/ja
Publication of JP2001115267A publication Critical patent/JP2001115267A/ja
Publication of JP2001115267A5 publication Critical patent/JP2001115267A5/ja
Withdrawn legal-status Critical Current

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  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP29706499A 1999-10-19 1999-10-19 プラズマ処理装置及び処理方法 Withdrawn JP2001115267A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29706499A JP2001115267A (ja) 1999-10-19 1999-10-19 プラズマ処理装置及び処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29706499A JP2001115267A (ja) 1999-10-19 1999-10-19 プラズマ処理装置及び処理方法

Publications (2)

Publication Number Publication Date
JP2001115267A true JP2001115267A (ja) 2001-04-24
JP2001115267A5 JP2001115267A5 (enExample) 2006-11-30

Family

ID=17841760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29706499A Withdrawn JP2001115267A (ja) 1999-10-19 1999-10-19 プラズマ処理装置及び処理方法

Country Status (1)

Country Link
JP (1) JP2001115267A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005015628A1 (ja) * 2003-08-12 2005-02-17 Shibaura Mechatronics Corporation プラズマ処理装置及びアッシング方法
JP2006086449A (ja) * 2004-09-17 2006-03-30 Tokyo Electron Ltd プラズマ処理装置およびプラズマ処理方法
KR101360970B1 (ko) * 2011-11-08 2014-02-21 가부시키가이샤 히다치 하이테크놀로지즈 열처리 장치

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005015628A1 (ja) * 2003-08-12 2005-02-17 Shibaura Mechatronics Corporation プラズマ処理装置及びアッシング方法
KR100835630B1 (ko) * 2003-08-12 2008-06-09 시바우라 메카트로닉스 가부시끼가이샤 플라즈마 처리 장치 및 에싱 방법
EP1655770A4 (en) * 2003-08-12 2009-01-14 Shibaura Mechatronics Corp PLASMA PROCESSING DEVICE AND ASHING METHOD
US7491908B2 (en) 2003-08-12 2009-02-17 Shibaura Mechatronics Corporation Plasma processing device and ashing method
CN100466193C (zh) * 2003-08-12 2009-03-04 芝浦机械电子装置股份有限公司 等离子体处理装置和灰化方法
KR100895253B1 (ko) * 2003-08-12 2009-04-29 시바우라 메카트로닉스 가부시끼가이샤 플라즈마 처리 장치 및 에싱 방법
JP2006086449A (ja) * 2004-09-17 2006-03-30 Tokyo Electron Ltd プラズマ処理装置およびプラズマ処理方法
KR101360970B1 (ko) * 2011-11-08 2014-02-21 가부시키가이샤 히다치 하이테크놀로지즈 열처리 장치

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