JP2001115267A5 - - Google Patents
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- Publication number
- JP2001115267A5 JP2001115267A5 JP1999297064A JP29706499A JP2001115267A5 JP 2001115267 A5 JP2001115267 A5 JP 2001115267A5 JP 1999297064 A JP1999297064 A JP 1999297064A JP 29706499 A JP29706499 A JP 29706499A JP 2001115267 A5 JP2001115267 A5 JP 2001115267A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma processing
- substrate
- processing chamber
- plasma
- processed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 description 78
- 239000007789 gas Substances 0.000 description 62
- 238000004380 ashing Methods 0.000 description 10
- 238000003672 processing method Methods 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 8
- 229910001882 dioxygen Inorganic materials 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 229910000838 Al alloy Inorganic materials 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
Images
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29706499A JP2001115267A (ja) | 1999-10-19 | 1999-10-19 | プラズマ処理装置及び処理方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29706499A JP2001115267A (ja) | 1999-10-19 | 1999-10-19 | プラズマ処理装置及び処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001115267A JP2001115267A (ja) | 2001-04-24 |
| JP2001115267A5 true JP2001115267A5 (enExample) | 2006-11-30 |
Family
ID=17841760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29706499A Withdrawn JP2001115267A (ja) | 1999-10-19 | 1999-10-19 | プラズマ処理装置及び処理方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001115267A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005064037A (ja) * | 2003-08-12 | 2005-03-10 | Shibaura Mechatronics Corp | プラズマ処理装置及びアッシング方法 |
| JP4633425B2 (ja) * | 2004-09-17 | 2011-02-16 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| JP5977986B2 (ja) * | 2011-11-08 | 2016-08-24 | 株式会社日立ハイテクノロジーズ | 熱処理装置 |
-
1999
- 1999-10-19 JP JP29706499A patent/JP2001115267A/ja not_active Withdrawn
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