JP2001110719A - 露光方法 - Google Patents

露光方法

Info

Publication number
JP2001110719A
JP2001110719A JP29278299A JP29278299A JP2001110719A JP 2001110719 A JP2001110719 A JP 2001110719A JP 29278299 A JP29278299 A JP 29278299A JP 29278299 A JP29278299 A JP 29278299A JP 2001110719 A JP2001110719 A JP 2001110719A
Authority
JP
Japan
Prior art keywords
pattern
exposure
divided
photomask
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29278299A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001110719A5 (https=
Inventor
Akira Imai
彰 今井
Norio Hasegawa
昇雄 長谷川
Katsuya Hayano
勝也 早野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP29278299A priority Critical patent/JP2001110719A/ja
Publication of JP2001110719A publication Critical patent/JP2001110719A/ja
Publication of JP2001110719A5 publication Critical patent/JP2001110719A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP29278299A 1999-10-14 1999-10-14 露光方法 Pending JP2001110719A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29278299A JP2001110719A (ja) 1999-10-14 1999-10-14 露光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29278299A JP2001110719A (ja) 1999-10-14 1999-10-14 露光方法

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2006206430A Division JP2006303541A (ja) 2006-07-28 2006-07-28 半導体集積回路装置の製造方法
JP2006206428A Division JP2006319368A (ja) 2006-07-28 2006-07-28 半導体集積回路装置の製造方法
JP2006206429A Division JP2006319369A (ja) 2006-07-28 2006-07-28 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JP2001110719A true JP2001110719A (ja) 2001-04-20
JP2001110719A5 JP2001110719A5 (https=) 2004-09-24

Family

ID=17786275

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29278299A Pending JP2001110719A (ja) 1999-10-14 1999-10-14 露光方法

Country Status (1)

Country Link
JP (1) JP2001110719A (https=)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004110035A (ja) * 2002-09-16 2004-04-08 Numerical Technologies Inc 大きいフィーチャに隣接する狭いスペースをプリントする際にｐｓｍ露光を支援するための第２の露光の使用
JP2004272228A (ja) * 2003-02-21 2004-09-30 Canon Inc マスク及びその製造方法、露光装置及び方法、並びに、デバイス製造方法
JP2005055878A (ja) * 2003-07-23 2005-03-03 Canon Inc マスク及びその製造方法、並びに、露光方法
JP2006128255A (ja) * 2004-10-27 2006-05-18 Renesas Technology Corp パターン形成方法、半導体装置の製造方法及び露光用マスクセット
JP2006519480A (ja) * 2003-02-27 2006-08-24 ザ ユニバーシティ オブ ホンコン 回路性能向上のための多重露光方法
KR100688723B1 (ko) 2006-02-17 2007-03-02 삼성전기주식회사 인쇄회로기판의 노광 방법
JP2008299332A (ja) * 2007-05-30 2008-12-11 Nikon Corp 露光方法、フラットパネルディスプレイ用基板の製造方法、及び露光装置
US7919231B2 (en) 2007-09-04 2011-04-05 Hitachi Global Storage Technologies Netherlands B.V. Photolithographic method and mask devices utilized for multiple exposures in the field of a feature
CN102880012A (zh) * 2012-09-17 2013-01-16 上海华力微电子有限公司 一种可提高工艺套准精度的曝光方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004110035A (ja) * 2002-09-16 2004-04-08 Numerical Technologies Inc 大きいフィーチャに隣接する狭いスペースをプリントする際にｐｓｍ露光を支援するための第２の露光の使用
JP2004272228A (ja) * 2003-02-21 2004-09-30 Canon Inc マスク及びその製造方法、露光装置及び方法、並びに、デバイス製造方法
JP2006519480A (ja) * 2003-02-27 2006-08-24 ザ ユニバーシティ オブ ホンコン 回路性能向上のための多重露光方法
JP2005055878A (ja) * 2003-07-23 2005-03-03 Canon Inc マスク及びその製造方法、並びに、露光方法
JP2006128255A (ja) * 2004-10-27 2006-05-18 Renesas Technology Corp パターン形成方法、半導体装置の製造方法及び露光用マスクセット
US8017305B2 (en) 2004-10-27 2011-09-13 Renesas Electronics Corporation Pattern forming method, semiconductor device manufacturing method and exposure mask set
KR100688723B1 (ko) 2006-02-17 2007-03-02 삼성전기주식회사 인쇄회로기판의 노광 방법
JP2008299332A (ja) * 2007-05-30 2008-12-11 Nikon Corp 露光方法、フラットパネルディスプレイ用基板の製造方法、及び露光装置
JP2013057963A (ja) * 2007-05-30 2013-03-28 Nikon Corp 露光方法及びフラットパネルディスプレイ用基板の製造方法
US7919231B2 (en) 2007-09-04 2011-04-05 Hitachi Global Storage Technologies Netherlands B.V. Photolithographic method and mask devices utilized for multiple exposures in the field of a feature
US8268517B2 (en) 2007-09-04 2012-09-18 Hitachi Global Storage Technologies Netherlands B.V. Photolithographic method and mask devices utilized for multiple exposures in the field of a feature
CN102880012A (zh) * 2012-09-17 2013-01-16 上海华力微电子有限公司 一种可提高工艺套准精度的曝光方法

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