JP2000506287A - 屈折率を最適化して性能を改善した光吸収性の反射防止層 - Google Patents

屈折率を最適化して性能を改善した光吸収性の反射防止層

Info

Publication number
JP2000506287A
JP2000506287A JP9532003A JP53200397A JP2000506287A JP 2000506287 A JP2000506287 A JP 2000506287A JP 9532003 A JP9532003 A JP 9532003A JP 53200397 A JP53200397 A JP 53200397A JP 2000506287 A JP2000506287 A JP 2000506287A
Authority
JP
Japan
Prior art keywords
reflective coating
refractive index
reflective
coating
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9532003A
Other languages
English (en)
Japanese (ja)
Inventor
ダメル・ラルフ・アール
ノーウッド・ロバート・エイ
Original Assignee
クラリアント・インターナショナル・リミテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by クラリアント・インターナショナル・リミテッド filed Critical クラリアント・インターナショナル・リミテッド
Publication of JP2000506287A publication Critical patent/JP2000506287A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/111—Anti-reflection coatings using layers comprising organic materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Paints Or Removers (AREA)
  • Laminated Bodies (AREA)
JP9532003A 1996-03-07 1997-03-06 屈折率を最適化して性能を改善した光吸収性の反射防止層 Pending JP2000506287A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US1300796P 1996-03-07 1996-03-07
US60/013,007 1996-03-07
PCT/US1997/003754 WO1997033200A1 (en) 1996-03-07 1997-03-06 Light-absorbing antireflective layers with improved performance due to refractive index optimization

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009288151A Division JP5097960B2 (ja) 1996-03-07 2009-12-18 屈折率を最適化して性能を改善した光吸収性の反射防止層

Publications (1)

Publication Number Publication Date
JP2000506287A true JP2000506287A (ja) 2000-05-23

Family

ID=21757832

Family Applications (2)

Application Number Title Priority Date Filing Date
JP9532003A Pending JP2000506287A (ja) 1996-03-07 1997-03-06 屈折率を最適化して性能を改善した光吸収性の反射防止層
JP2009288151A Expired - Lifetime JP5097960B2 (ja) 1996-03-07 2009-12-18 屈折率を最適化して性能を改善した光吸収性の反射防止層

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2009288151A Expired - Lifetime JP5097960B2 (ja) 1996-03-07 2009-12-18 屈折率を最適化して性能を改善した光吸収性の反射防止層

Country Status (7)

Country Link
EP (1) EP0885406B1 (enExample)
JP (2) JP2000506287A (enExample)
KR (1) KR100458685B1 (enExample)
CN (1) CN1091264C (enExample)
DE (1) DE69703283T2 (enExample)
TW (1) TW357395B (enExample)
WO (1) WO1997033200A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009511969A (ja) * 2005-10-13 2009-03-19 インターナショナル・ビジネス・マシーンズ・コーポレーション １９３ｎｍの放射波長において低屈折率を有する上面反射防止コーティング組成物
JP2009517874A (ja) * 2005-12-02 2009-04-30 コミシリア ア レネルジ アトミック 吸収性の空洞を有する極紫外線フォトリソグラフィマスク

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997033201A1 (en) * 1996-03-07 1997-09-12 Clariant International, Ltd. Bottom antireflective coatings through refractive index modification by anomalous dispersion
US5733714A (en) * 1996-09-30 1998-03-31 Clariant Finance (Bvi) Limited Antireflective coating for photoresist compositions
US5981145A (en) * 1997-04-30 1999-11-09 Clariant Finance (Bvi) Limited Light absorbing polymers
US5994430A (en) * 1997-04-30 1999-11-30 Clariant Finance Bvi) Limited Antireflective coating compositions for photoresist compositions and use thereof
US20030054117A1 (en) * 2001-02-02 2003-03-20 Brewer Science, Inc. Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition
JP2015172606A (ja) * 2012-07-25 2015-10-01 日産化学工業株式会社 リソグラフィー用レジスト上層膜形成組成物及びそれを用いた半導体装置の製造方法
FR3012132B1 (fr) * 2013-10-18 2016-08-05 Centre Nat Rech Scient Procede de fabrication de supports amplificateurs de contraste
CN103941548A (zh) * 2014-04-28 2014-07-23 吴钟达 具有吸光层的感光层结构与使用感光层结构的光刻工艺
CN116978780A (zh) * 2023-07-31 2023-10-31 湖北江城芯片中试服务有限公司 半导体器件及其制备方法
CN117024652A (zh) * 2023-08-25 2023-11-10 复旦大学 一种光交联聚合物近红外光子材料及其制备方法和应用

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63110725A (ja) * 1986-10-29 1988-05-16 Nec Corp 半導体装置の製造方法
JP2897569B2 (ja) * 1991-12-30 1999-05-31 ソニー株式会社 レジストパターン形成時に用いる反射防止膜の条件決定方法と、レジストパターン形成方法
JP2829555B2 (ja) * 1992-08-20 1998-11-25 三菱電機株式会社 微細レジストパターンの形成方法
JP3334304B2 (ja) * 1993-11-30 2002-10-15 ソニー株式会社 半導体装置の製造方法
JP3248353B2 (ja) * 1994-06-29 2002-01-21 ソニー株式会社 反射防止膜の設計方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009511969A (ja) * 2005-10-13 2009-03-19 インターナショナル・ビジネス・マシーンズ・コーポレーション １９３ｎｍの放射波長において低屈折率を有する上面反射防止コーティング組成物
JP2009517874A (ja) * 2005-12-02 2009-04-30 コミシリア ア レネルジ アトミック 吸収性の空洞を有する極紫外線フォトリソグラフィマスク

Also Published As

Publication number Publication date
DE69703283D1 (de) 2000-11-16
DE69703283T2 (de) 2001-05-17
JP5097960B2 (ja) 2012-12-12
JP2010107996A (ja) 2010-05-13
TW357395B (en) 1999-05-01
WO1997033200A1 (en) 1997-09-12
EP0885406B1 (en) 2000-10-11
CN1212767A (zh) 1999-03-31
EP0885406A1 (en) 1998-12-23
KR19990087480A (ko) 1999-12-27
CN1091264C (zh) 2002-09-18
KR100458685B1 (ko) 2005-06-02

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