JP2000500292A - 磁界センサ及び磁界センサの製造方法 - Google Patents
磁界センサ及び磁界センサの製造方法Info
- Publication number
- JP2000500292A JP2000500292A JP10504968A JP50496898A JP2000500292A JP 2000500292 A JP2000500292 A JP 2000500292A JP 10504968 A JP10504968 A JP 10504968A JP 50496898 A JP50496898 A JP 50496898A JP 2000500292 A JP2000500292 A JP 2000500292A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- magnetic
- magnetic field
- sensor
- exchange
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000004544 sputter deposition Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229910000480 nickel oxide Inorganic materials 0.000 claims abstract description 10
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 19
- 230000004907 flux Effects 0.000 claims description 15
- 229910000889 permalloy Inorganic materials 0.000 abstract description 13
- 238000000151 deposition Methods 0.000 abstract description 4
- 230000008021 deposition Effects 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 32
- 230000005415 magnetization Effects 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 229910015136 FeMn Inorganic materials 0.000 description 7
- 210000003128 head Anatomy 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000003795 desorption Methods 0.000 description 3
- 241000238366 Cephalopoda Species 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 229910000914 Mn alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000005347 demagnetization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 210000000887 face Anatomy 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- DALUDRGQOYMVLD-UHFFFAOYSA-N iron manganese Chemical compound [Mn].[Fe] DALUDRGQOYMVLD-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/90—Magnetic feature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/11—Magnetic recording head
- Y10T428/1107—Magnetoresistive
- Y10T428/1121—Multilayer
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP96201884 | 1996-07-05 | ||
| EP96201884.2 | 1996-07-05 | ||
| PCT/IB1997/000657 WO1998001762A2 (en) | 1996-07-05 | 1997-06-06 | A magnetic field sensor and a method of manufacturing such a sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000500292A true JP2000500292A (ja) | 2000-01-11 |
| JP2000500292A5 JP2000500292A5 (enExample) | 2005-03-10 |
Family
ID=8224149
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10504968A Ceased JP2000500292A (ja) | 1996-07-05 | 1997-06-06 | 磁界センサ及び磁界センサの製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5904996A (enExample) |
| EP (1) | EP0910800B1 (enExample) |
| JP (1) | JP2000500292A (enExample) |
| DE (1) | DE69727574T2 (enExample) |
| WO (1) | WO1998001762A2 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69722860T2 (de) * | 1996-01-31 | 2004-05-19 | Koninklijke Philips Electronics N.V. | Magnetkopf mit magnetoresistivem sensor und mit den magnetkopf versehende abtastvorrichtung |
| US6184680B1 (en) * | 1997-03-28 | 2001-02-06 | Tdk Corporation | Magnetic field sensor with components formed on a flexible substrate |
| WO1999001778A1 (en) * | 1997-07-01 | 1999-01-14 | Koninklijke Philips Electronics N.V. | Magnetic field sensor |
| US6472868B1 (en) * | 1998-08-05 | 2002-10-29 | Minebea Co., Ltd. | Magnetic impedance element having at least two thin film-magnetic cores |
| US6306311B1 (en) | 1999-11-01 | 2001-10-23 | Headway Technologies, Inc. | Method to make a high data rate stitched writer for a giant magneto-resistive head |
| DE10028640B4 (de) * | 2000-06-09 | 2005-11-03 | Institut für Physikalische Hochtechnologie e.V. | Wheatstonebrücke, beinhaltend Brückenelemente, bestehend aus einem Spin-Valve-System, sowie ein Verfahren zu deren Herstellung |
| FR2845075B1 (fr) * | 2002-09-27 | 2005-08-05 | Thales Sa | Microcommutateurs a actuation electrostatique a faible temps de reponse et commutation de puissance et procede de realisation associe |
| JP2004356338A (ja) * | 2003-05-28 | 2004-12-16 | Res Inst Electric Magnetic Alloys | 薄膜磁気センサ及びその製造方法 |
| JP2004363157A (ja) * | 2003-06-02 | 2004-12-24 | Res Inst Electric Magnetic Alloys | 薄膜磁気センサ及びその製造方法 |
| US20040246649A1 (en) * | 2003-06-03 | 2004-12-09 | Mks Instruments, Inc. | Flow control valve with magnetic field sensor |
| US10816615B2 (en) * | 2017-05-19 | 2020-10-27 | Asahi Kasei Microdevices Corporation | Magnetic sensor |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0594243A3 (en) * | 1992-10-19 | 1994-09-21 | Philips Electronics Nv | Magnetic field sensor |
| US5446613A (en) * | 1994-02-28 | 1995-08-29 | Read-Rite Corporation | Magnetic head assembly with MR sensor |
| JPH08129721A (ja) * | 1994-09-08 | 1996-05-21 | Sumitomo Metal Ind Ltd | ＮｉＯ反強磁性膜の製造方法並びに磁気抵抗効果素子の製造方法とその素子 |
| JP2738312B2 (ja) * | 1994-09-08 | 1998-04-08 | 日本電気株式会社 | 磁気抵抗効果膜およびその製造方法 |
| JP2748876B2 (ja) * | 1995-01-27 | 1998-05-13 | 日本電気株式会社 | 磁気抵抗効果膜 |
| JPH0983039A (ja) * | 1995-09-14 | 1997-03-28 | Nec Corp | 磁気抵抗効果素子 |
-
1997
- 1997-06-06 JP JP10504968A patent/JP2000500292A/ja not_active Ceased
- 1997-06-06 EP EP97923275A patent/EP0910800B1/en not_active Expired - Lifetime
- 1997-06-06 WO PCT/IB1997/000657 patent/WO1998001762A2/en not_active Ceased
- 1997-06-06 DE DE69727574T patent/DE69727574T2/de not_active Expired - Fee Related
- 1997-06-19 US US08/879,165 patent/US5904996A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| WO1998001762A2 (en) | 1998-01-15 |
| EP0910800A2 (en) | 1999-04-28 |
| EP0910800B1 (en) | 2004-02-11 |
| US5904996A (en) | 1999-05-18 |
| DE69727574T2 (de) | 2004-12-16 |
| DE69727574D1 (de) | 2004-03-18 |
| WO1998001762A3 (en) | 1999-04-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040607 |
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| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040607 |
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| A72 | Notification of change in name of applicant |
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| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20071030 |
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| A313 | Final decision of rejection without a dissenting response from the applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A313 Effective date: 20080403 |
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| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20080610 |