JP2000311916A - Hybrid integrated circuit device - Google Patents

Hybrid integrated circuit device

Info

Publication number
JP2000311916A
JP2000311916A JP11870399A JP11870399A JP2000311916A JP 2000311916 A JP2000311916 A JP 2000311916A JP 11870399 A JP11870399 A JP 11870399A JP 11870399 A JP11870399 A JP 11870399A JP 2000311916 A JP2000311916 A JP 2000311916A
Authority
JP
Japan
Prior art keywords
wire
connection electrode
wiring board
connection
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11870399A
Other languages
Japanese (ja)
Other versions
JP3612238B2 (en
Inventor
Yoshihiro Takeshita
良博 竹下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP11870399A priority Critical patent/JP3612238B2/en
Publication of JP2000311916A publication Critical patent/JP2000311916A/en
Application granted granted Critical
Publication of JP3612238B2 publication Critical patent/JP3612238B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/2076Diameter ranges equal to or larger than 100 microns

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To connect a wiring board and an insulative case housing it with high connection reliability, without breaking wires even under an environment with an operating atmosphere tending to a high temp. with rapid changes in the temp. SOLUTION: This device comprises a wiring board 2, having connection electrodes 7 provided on the surface of an insulation board 4, an insulative case 3 which is made of an insulation material having a thermal expansion coefficient higher than that of the board 4, houses the wiring board 2 inside, and has connection electrodes 9 provided at positions facing the electrodes 7 of the wiring board 2, and a cover 15 for sealing the wiring board 2 in the insulative case 3, and the connection electrodes 7, 9 are electrically connected through looped wires 10 of 500 μm or smaller diameter, so that the valve represented by (θ/h)/h is 6 or less where the max. rise angle is θ( deg.) and the max. loop height of the wire 10 from the connection electrodes 7, 9 is h(mm).

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、 半導体素子が収容
搭載される半導体素子収納用パッケージや、半導体素子
の他にコンデンサや抵抗体等の各種電子部品が搭載され
る混成集積回路基板などのセラミック配線基板を、絶縁
性のケースと蓋体とから成る容器内に封止してなり、特
に自動車などの車載用として好適な混成集積回路装置に
関するものであって、特に、前記セラミック配線基板と
絶縁性ケースとのボンディングワイヤによる接続信頼性
を高めるための改良に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic package such as a semiconductor integrated circuit board in which various electronic components such as a capacitor and a resistor are mounted in addition to a semiconductor element. The present invention relates to a hybrid integrated circuit device in which a wiring board is sealed in a container formed of an insulating case and a lid, and is particularly suitable for use in a vehicle such as an automobile. The present invention relates to an improvement for improving the connection reliability of a bonding case with a bonding case.

【0002】[0002]

【従来技術】従来より、混成集積回路装置は、半導体素
子収納用パッケージや複数の各種電子部品を搭載した混
成集積回路基板等から成る配線基板を適宜、所定の容器
に封入することにより構成されている。
2. Description of the Related Art Conventionally, a hybrid integrated circuit device is constructed by appropriately enclosing a wiring board composed of a package for accommodating a semiconductor element and a hybrid integrated circuit board on which a plurality of various electronic components are mounted in a predetermined container. I have.

【0003】かかる混成集積回路装置としては、例え
ば、図4に示すように、半導体素子20や抵抗素子など
の各種電子部品21から発生する熱を外部に放熱するた
めに、半導体素子20や電子部品21を搭載した配線基
板22の裏面にヒートシンク23が取着されている。そ
して、ヒートシンク23が取着された配線基板22は、
絶縁性ケース24内に収納される。
As shown in FIG. 4, for example, as shown in FIG. 4, in order to radiate heat generated from various electronic parts 21 such as a semiconductor element 20 and a resistance element to the outside, a semiconductor element 20 and an electronic part A heat sink 23 is attached to the back surface of the wiring board 22 on which the circuit board 21 is mounted. Then, the wiring board 22 to which the heat sink 23 is attached is
It is stored in the insulating case 24.

【0004】また、配線基板22の表面には、外部回路
と接続するための接続電極25が被着形成されており、
絶縁性ケース24には、配線基板22の接続電極25と
電気的に接続するために、配線基板22の接続電極25
と対向する位置に、ケース側接続電極26が形成されて
いる。そして、この接続電極25とケース側接続電極2
6とは、ワイヤボンディング法などによって、アルミニ
ウムなどの金属からなる線径が約100μm〜500μ
mの大径のワイヤ27によって電気的に接続されてい
る。また、ケース24内の配線基板22およびワイヤ2
7による接続部は保護用ゲル材28によって埋設され、
蓋体29をケース24の開口部に接合して封止すること
により集積回路装置となる。
A connection electrode 25 for connecting to an external circuit is formed on the surface of the wiring board 22.
In order to electrically connect with the connection electrode 25 of the wiring board 22, the insulating case 24 has a connection electrode 25 of the wiring board 22.
A case-side connection electrode 26 is formed at a position opposite to. The connection electrode 25 and the case-side connection electrode 2
6 means that the wire diameter of a metal such as aluminum is about 100 μm to 500 μm by a wire bonding method or the like.
are electrically connected by a large diameter wire 27 of m. The wiring board 22 and the wire 2
7 is buried by a protective gel material 28,
The integrated circuit device is obtained by joining and sealing the lid 29 to the opening of the case 24.

【0005】[0005]

【発明が解決しようとする課題】ところが、上記従来の
混成集積回路装置では、稼働中の雰囲気温度の急激な変
化や、半導体素子20や電子部品21の発熱による温度
変化等で、前記ケース24が熱変形を起こし、該ケース
24の接続電極26と配線基板22の接続電極25との
接続を担うワイヤ27が断線するという問題があった。
However, in the above-described conventional hybrid integrated circuit device, the case 24 is caused by a sudden change in the ambient temperature during operation or a temperature change due to heat generation of the semiconductor element 20 or the electronic component 21. There has been a problem that thermal deformation occurs and the wire 27 that connects the connection electrode 26 of the case 24 and the connection electrode 25 of the wiring board 22 is broken.

【0006】例えば、混成集積回路装置を構成する配線
基板の絶縁基板がアルミナ(Al23 )セラミックス
の場合、熱膨張率は約7×10-6/℃であり、ケース材
として代表されるPBT樹脂の熱膨張率は50×10-6
/℃であることから、前述のような温度変化によりケー
ス24の伸縮が配線基板22のそれより極めて大きいた
めに、前記ワイヤ27のケース側接続電極26との接続
点に大きな歪みが発生する。そして、温度変化が繰り返
し発生するような環境に保持されると、この歪みが繰り
返し発生することから、やがてワイヤ27のケース側接
続電極26との接続点付近で断線してしまうのである。
For example, when the insulating substrate of the wiring substrate constituting the hybrid integrated circuit device is made of alumina (Al 2 O 3 ) ceramics, the coefficient of thermal expansion is about 7 × 10 −6 / ° C., and is represented as a case material. The thermal expansion coefficient of PBT resin is 50 × 10 -6
/ ° C., since the expansion and contraction of the case 24 is much larger than that of the wiring board 22 due to the above-mentioned temperature change, a large distortion occurs at the connection point of the wire 27 with the case-side connection electrode 26. If the environment is maintained such that a temperature change is repeatedly generated, the distortion is repeatedly generated, and eventually the wire 27 is disconnected near the connection point with the case-side connection electrode 26.

【0007】そのために、ワイヤ27による接続構造で
は、稼働雰囲気が高温になり易く、温度変化が激しい自
動車などの車載用の混成集積回路装置としては、高い接
続信頼性を確保することが非常に困難であった。
For this reason, in the connection structure using the wires 27, the operating atmosphere tends to be high in temperature, and it is very difficult to secure high connection reliability as a hybrid integrated circuit device for a vehicle such as an automobile whose temperature changes rapidly. Met.

【0008】このような課題に対しては、配線基板を収
納するケースを、所定方向に配向した強化用繊維と、該
強化用繊維の配向方向を変更するためのじゃま板とを備
えて構成された混成集積回路装置が特開平1−3904
9号公報にて提案されているが、このようなケースの構
造や材質の変更による対策は、部品点数、部品コストの
増加及び工数の増加を招き、量産性に問題が発生するこ
とが多く、より簡単な対策が必要とされてきた。
In order to solve such a problem, a case for accommodating a wiring board is provided with a reinforcing fiber oriented in a predetermined direction and a baffle for changing the orientation direction of the reinforcing fiber. Japanese Patent Application Laid-Open No. Hei.
However, such measures by changing the structure or material of the case cause an increase in the number of parts, an increase in the cost of parts, and an increase in man-hours, and often cause a problem in mass productivity. Simpler measures have been needed.

【0009】また、構造を変更することなくボンディン
グワイヤの耐久接続信頼性を確保する方法として、ワイ
ヤのループ高さhを高くする方法が知られている。しか
し、装置の小型化が進み、収容空間の高さが制約された
り、ワイヤの保護のための保護用ゲル材28が多量に必
要になるなどの問題があり、限られた収容空間内で大径
のワイヤによる接続法による高い耐久性を有する接続信
頼性を確保するのは非常に困難であった。
[0009] As a method for ensuring the durable connection reliability of the bonding wire without changing the structure, a method of increasing the loop height h of the wire is known. However, there are problems such as the miniaturization of the device progressing, the height of the accommodation space is restricted, and a large amount of the protective gel material 28 for protecting the wires is required. It has been very difficult to ensure connection reliability with high durability by a connection method using a wire having a diameter.

【0010】従って、発明の目的は、稼働雰囲気が高温
になり易く、温度変化の激しい環境下においても、ケー
スの接続電極と、配線基板の接続電極とを接続するワイ
ヤが断線することなく、高い接続信頼性を有する混成集
積回路装置を提供することにある。
Accordingly, an object of the present invention is to provide a high operating atmosphere without a break in a wire connecting a connection electrode of a case and a connection electrode of a wiring board even in an environment where the temperature is easily changed and the temperature is drastically changed. An object of the present invention is to provide a hybrid integrated circuit device having connection reliability.

【0011】[0011]

【課題を解決するための手段】本発明者は、前記課題を
解決するためにワイヤによる接続構造について検討を重
ねた結果、ワイヤによる接続信頼性がループ高さhのみ
でなく、ケース側の接続電極におけるワイヤの立上り角
θに大きく依存することに着目し、また、ワイヤの破断
寿命が(θ/h)/hが小さくなるほど長くなることを
見出し、本発明に至った。
The inventor of the present invention has studied the connection structure using wires in order to solve the above-mentioned problems. As a result, the connection reliability of the wires is not limited to the loop height h, but also to the case side connection. The inventors have focused on the fact that they greatly depend on the rising angle θ of the wire in the electrode, and found that the breaking life of the wire becomes longer as (θ / h) / h becomes smaller, leading to the present invention.

【0012】即ち、本発明の混成集積回路装置は、絶縁
基板の表面に第1の接続電極が設けられた配線基板と、
前記絶縁基板よりも熱膨張係数の大きい絶縁材料からな
り、内部に前記配線基板を収納するとともに、該配線基
板の第1の接続電極と対向する位置に第2の接続電極が
設けられてなる絶縁性ケースと、前記絶縁性ケース内に
前記配線基板を封止するための蓋体とを具備し、前記第
1の接続電極と前記第2の接続電極とをループ形状の線
径が500μm以下のワイヤによって電気的に接続して
なる混成集積回路装置において、前記ワイヤの前記接続
電極からの最大立上り角をθ(°)、該ワイヤの前記接
続電極面からの最大ループ高さをh(mm)とした時、
(θ/h)/hで表される値が6以下であることを特徴
とするものであり、特に、前記ワイヤの線径が100μ
m以下であること、前記ワイヤがアルミニウムを主成分
とする金属からなること、前記第1の接続電極面と前記
第2の接続電極面が、実質的に同一高さであること、前
記配線基板における絶縁基板がセラミックスからなり、
前記前記絶縁性ケースが、有機樹脂を含有する絶縁材料
からなること等をさらなる特徴とするものであり、ま
た、かかる混成集積回路装置は、車載用として好適に用
いられるものである。
That is, a hybrid integrated circuit device according to the present invention comprises: a wiring board having a first connection electrode provided on a surface of an insulating substrate;
An insulating material which is made of an insulating material having a larger thermal expansion coefficient than the insulating substrate, houses the wiring substrate therein, and has a second connection electrode provided at a position facing the first connection electrode of the wiring substrate. And a lid for sealing the wiring board in the insulating case, wherein the first connection electrode and the second connection electrode have a loop-shaped wire diameter of 500 μm or less. In a hybrid integrated circuit device electrically connected by wires, the maximum rise angle of the wire from the connection electrode is θ (°), and the maximum loop height of the wire from the connection electrode surface is h (mm). When
The value represented by (θ / h) / h is 6 or less, and particularly, the wire diameter of the wire is 100 μm.
m, the wire is made of a metal containing aluminum as a main component, the first connection electrode surface and the second connection electrode surface are substantially the same height, The insulating substrate in is made of ceramics,
The insulating case is further characterized by being made of an insulating material containing an organic resin, and the hybrid integrated circuit device is suitably used for a vehicle.

【0013】[0013]

【作用】配線基板における接続電極と、配線基板を収納
するケースにおける接続電極とのワイヤによる接続構造
において、接続電極との接続点付近でのワイヤの断線
は、配線基板の絶縁基板とケースとの熱膨張差によっ
て、接続電極間の距離が繰り返し変化することにより、
ワイヤの電極との接続点付近に塑性歪みが蓄積し、ワイ
ヤが疲労破壊することによるものである。
In the connection structure of the wiring between the connection electrode on the wiring board and the connection electrode in the case for housing the wiring board, the disconnection of the wire near the connection point with the connection electrode causes the connection between the insulating substrate of the wiring board and the case. Due to the thermal expansion difference, the distance between the connection electrodes changes repeatedly,
This is because plastic strain accumulates near the connection point between the wire and the electrode, and the wire undergoes fatigue failure.

【0014】このワイヤの接続電極との接続点付近の塑
性歪みは、ループの高さhが大きいほど、また接続電極
におけるワイヤの最大立上り角θが小さいほど、小さく
なる傾向がある。具体的には、(θ/h)/hに比例し
て塑性歪みも小さくなる。この原理から、(θ/h)/
hの値を小さいする、言い換えれば、ワイヤの最大ルー
プ高さhに対して、ワイヤの最大立上り角θを小さくす
ることによって、ワイヤのループ高さを高くすることな
しに、ワイヤの長期接続信頼性を向上させることができ
る。また、この構造によれば、配線基板やケースなどの
構造を変更する必要がないために生産性の問題点も発生
することがない。
The plastic strain in the vicinity of the connection point of the wire with the connection electrode tends to decrease as the height h of the loop increases and as the maximum rise angle θ of the wire at the connection electrode decreases. Specifically, the plastic strain decreases in proportion to (θ / h) / h. From this principle, (θ / h) /
By reducing the value of h, in other words, by reducing the maximum rising angle θ of the wire with respect to the maximum loop height h of the wire, the long-term connection reliability of the wire can be reduced without increasing the loop height of the wire. Performance can be improved. Further, according to this structure, there is no need to change the structure of the wiring board, the case, and the like, so that there is no problem in productivity.

【0015】また、かかる構造は、ワイヤの線径が50
0μmよりも大きい場合には、ワイヤの剛性が高くなり
接続電極間の変位差をワイヤが吸収できないために断線
しやすくなるためにワイヤの線径が500μmであるこ
とが必要である。なお、ワイヤとして、アルミニウムを
主成分とする金属によって構成することにより、ボンデ
ィング作業を容易にできるとともに、製品コストを低減
できる。
Further, such a structure has a wire diameter of 50 mm.
When it is larger than 0 μm, the wire diameter is required to be 500 μm in order to increase the rigidity of the wire and to make it difficult for the wire to absorb the displacement difference between the connection electrodes and to easily break the wire. In addition, by configuring the wire with a metal containing aluminum as a main component, the bonding operation can be facilitated and the product cost can be reduced.

【0016】さらに、前記第1の接続電極面と前記第2
の接続電極面とは、実質的に同一高さであることが、ワ
イヤボンディング法による生産性を高める上で望まし
い。
Further, the first connection electrode surface and the second connection electrode surface
It is desirable that the connection electrode surface has substantially the same height as the connection electrode surface in order to increase the productivity by the wire bonding method.

【0017】また、上記の構成は、前記配線基板におけ
る絶縁基板が、セラミックスからなり、前記絶縁性ケー
スが、有機樹脂を含有する絶縁材料からなる場合におい
て、最も有効的である。
Further, the above configuration is most effective when the insulating substrate in the wiring substrate is made of ceramics and the insulating case is made of an insulating material containing an organic resin.

【0018】かかる構成によれば、高温および低温雰囲
気に晒される過酷な条件下においても優れた接続信頼性
を発揮することができ、特に、自動車等のエンジン制御
やトランスミッション制御、シャーシー制御などを担う
車載用の混成集積回路装置に最も好適に使用される。
According to this configuration, excellent connection reliability can be exhibited even under severe conditions exposed to high-temperature and low-temperature atmospheres, and is particularly responsible for engine control, transmission control, chassis control, etc. of an automobile or the like. It is most suitably used for hybrid integrated circuit devices for vehicles.

【0019】[0019]

【発明の実施の形態】以下、本発明の混成集積回路装置
を図面に基づき詳細に説明する。図1は、本発明の混成
集積回路装置の概略断面図である。図1において、1
は、混成集積回路装置、2は配線基板、3は絶縁性ケー
スである。配線基板2によれば、絶縁基板4の表面に
は、配線回路11が被着形成され、絶縁基板4の表面に
搭載された半導体素子5や抵抗素子などの電子部品6等
と電気的に接続されて電気回路が形成されている。ま
た、配線基板2の端部には、外部回路と接続するための
接続電極7が被着形成されている。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a hybrid integrated circuit device according to the present invention will be described in detail with reference to the drawings. FIG. 1 is a schematic sectional view of a hybrid integrated circuit device according to the present invention. In FIG. 1, 1
Denotes a hybrid integrated circuit device, 2 denotes a wiring board, and 3 denotes an insulating case. According to the wiring board 2, the wiring circuit 11 is formed on the surface of the insulating substrate 4 and electrically connected to the electronic components 6 such as the semiconductor element 5 and the resistance element mounted on the surface of the insulating substrate 4. Thus, an electric circuit is formed. A connection electrode 7 for connecting to an external circuit is formed on an end of the wiring board 2.

【0020】また、配線基板2の裏面には、表面に搭載
された半導体素子5や電子部品6から発生した熱を放散
させるために高熱伝導性セラミックスからなるヒートシ
ンク8が接合されている。
A heat sink 8 made of highly thermally conductive ceramic is joined to the back surface of the wiring board 2 to dissipate the heat generated from the semiconductor elements 5 and the electronic components 6 mounted on the front surface.

【0021】また、上記配線基板2は、絶縁性ケース3
内にて、配線基板2に接合されたヒートシンクがケース
3の下面から露出するようにして収納固定されている。
また、絶縁性ケース3の配線基板2における接続電極7
と対向するケース3の表面に、接続電極9が形成されて
おり、この接続電極9は、ケース3に設けられた接続端
子(図示せず)と電気的に接続されている。
The wiring board 2 is made of an insulating case 3
Inside, the heat sink joined to the wiring board 2 is stored and fixed so as to be exposed from the lower surface of the case 3.
Also, the connection electrodes 7 on the wiring board 2 of the insulating case 3
A connection electrode 9 is formed on the surface of the case 3 facing the substrate 3, and the connection electrode 9 is electrically connected to a connection terminal (not shown) provided on the case 3.

【0022】そして、配線基板2側の接続電極7と、ケ
ース3側の接続電極9とは、線径が100〜500μm
のワイヤ10によって電気的に接続されている。このワ
イヤ10による接続は、一般的なワイヤボンディング装
置によって行われる。
The connection electrode 7 on the wiring board 2 and the connection electrode 9 on the case 3 have a wire diameter of 100 to 500 μm.
Are electrically connected by wires 10. The connection by the wire 10 is performed by a general wire bonding apparatus.

【0023】このワイヤーボンディング装置によれば、
図3(a)に示すように、まず、接続電極9に超音波ボ
ンディング用ツール12によってクランプ13により保
持されたワイヤ10を接続する。次に、図3(b)に示
すように、ツール12を移動させ、接続電極7にワイヤ
10をボンディング接続し、図3(c)に示すようにワ
イヤ10の端部を切断することにより、接続電極7、9
をループ形状のワイヤ10によって接続することができ
る。なお、超音波ボンディング用ツール12による接続
の順序としては、接続電極7から接続電極9に接続して
もよい。
According to this wire bonding apparatus,
As shown in FIG. 3A, first, the wire 10 held by the clamp 13 is connected to the connection electrode 9 by the ultrasonic bonding tool 12. Next, as shown in FIG. 3B, the tool 12 is moved, the wire 10 is bonded and connected to the connection electrode 7, and the end of the wire 10 is cut off as shown in FIG. 3C. Connection electrodes 7, 9
Can be connected by a loop-shaped wire 10. The order of connection by the ultrasonic bonding tool 12 may be from the connection electrode 7 to the connection electrode 9.

【0024】本発明によれば、上記ループ形状におい
て、図2に示すように、接続電極7、9におけるループ
形状の内側におけるワイヤ10の立上り角θ1 、θ2
うち、大きい方の角度(図2ではθ1 )を最大立上り角
θ(°)、ループ形状の接続電極7、9面からのループ
形状の頂点までの高さのうち、大きい方の高さを最大ル
ープ高さh(mm)とした時、(θ/h)/hで表され
る値が、6以下、特に5以下、さらには4以下であるこ
とが重要である。
According to the present invention, in the above loop shape, as shown in FIG. 2, the larger one of the rising angles θ 1 and θ 2 of the wire 10 inside the loop shape of the connection electrodes 7 and 9 ( In FIG. 2, θ 1 ) is the maximum rising angle θ (°), and the larger one of the heights from the loop-shaped connection electrodes 7 and 9 to the top of the loop is defined as the maximum loop height h (mm). )), It is important that the value represented by (θ / h) / h is 6 or less, particularly 5 or less, and more preferably 4 or less.

【0025】これは、接続電極7、9間の接続信頼性を
高める上で重要であり、上記の値が6よりも大きいと、
立上り角の大きい接続部に大きな塑性歪みが発生し、ワ
イヤ10の立上り角の大きい接続電極側で断線が発生し
やすくなり、接続信頼性が確保できなくなる。
This is important for improving the connection reliability between the connection electrodes 7 and 9. If the above value is larger than 6,
A large plastic strain is generated in the connection portion having a large rising angle, and a disconnection is likely to occur on the connection electrode side of the wire 10 having a large rising angle, so that connection reliability cannot be secured.

【0026】また、ワイヤ10の線径は500μm以
下、特に400μm以下であることも重要である。これ
は、ワイヤの線径が500μmよりも大きいと、ワイヤ
10自体の剛性が高くなってしまい接続電極7、9間の
変位差をワイヤ10自体が吸収できず断線を引き起こす
ためである。なお、ワイヤ10の線径は100μm以上
であることが望ましい。これは、ワイヤ10の線径が1
00μmよりも細すぎると、一般的に混成集積回路に対
して適用される0.1A以上の電流に対してワイヤが許
容できず、接続電極7、9間を2本以上のワイヤによっ
て接続する必要が生じ、その結果、工数、コストが増え
てしまうためである。
It is also important that the wire diameter of the wire 10 is 500 μm or less, particularly 400 μm or less. This is because if the wire diameter of the wire is larger than 500 μm, the rigidity of the wire 10 itself becomes high, and the wire 10 itself cannot absorb the displacement difference between the connection electrodes 7 and 9, causing disconnection. Note that the wire diameter of the wire 10 is desirably 100 μm or more. This means that the wire diameter of the wire 10 is 1
If the thickness is smaller than 00 μm, the wires cannot accept a current of 0.1 A or more generally applied to a hybrid integrated circuit, and it is necessary to connect the connection electrodes 7 and 9 with two or more wires. This results in an increase in man-hours and costs.

【0027】なお、上記ワイヤ10の最大ループ高さh
が低すぎると装置的にループ形状を形成することが困難
であると同時に接続電極7、9間の変位差を十分に吸収
できず断線してしまう恐れがあるため2mm以上である
ことが望ましい。一方、最大ループ高さが高すぎると、
混成集積回路装置の外形状が大きくなる他、ワイヤの腐
食防止に用いる保護ゲルの必要量が多くなり、コスト高
につながるといった問題が生じるためこの高さは10m
m以下が適当である。
The maximum loop height h of the wire 10
If the ratio is too low, it is difficult to form a loop shape in a device, and at the same time, the displacement difference between the connection electrodes 7 and 9 cannot be sufficiently absorbed, and there is a possibility of disconnection. On the other hand, if the maximum loop height is too high,
Since the external shape of the hybrid integrated circuit device becomes large, the required amount of the protective gel used for preventing corrosion of the wire increases, and the cost increases, the height is 10 m.
m or less is appropriate.

【0028】この最大ループ高さ位置は、特に限定する
ものではないが、図2に示したように超音波ボンディン
グツールによって、ケース3の接続電極9から配線基板
2側の接続電極7にワイヤを接続する場合、最大ループ
高さ位置は、接続電極7、9の中間位置よりもケース3
の接続電極9側にシフトする。逆に、配線基板2側の接
続電極7からケース3の接続電極9にワイヤを接続する
場合、最大ループ高さ位置は、接続電極7、9の中間位
置よりも配線基板2の接続電極7側にシフトする。
Although the maximum loop height position is not particularly limited, as shown in FIG. 2, a wire is connected from the connection electrode 9 of the case 3 to the connection electrode 7 of the wiring board 2 by an ultrasonic bonding tool. In the case of connection, the maximum loop height position is higher than the middle position of the connection electrodes 7 and 9 in case 3.
To the connection electrode 9 side. Conversely, when a wire is connected from the connection electrode 7 on the wiring board 2 side to the connection electrode 9 on the case 3, the maximum loop height position is closer to the connection electrode 7 side of the wiring board 2 than the intermediate position between the connection electrodes 7 and 9. Shift to

【0029】ワイヤ10の上記最大立上り角θは、ルー
プ高さhを高くすることなく(θ/h)/hを6以下に
するためにはできるだけ小さい方がよいが、あまりにも
小さすぎるとボンディングワイヤの剛性が高くなってし
まい接続電極間の変位差を吸収できずボンディングワイ
ヤ接続部での剥離破壊を生じてしまう場合がある。よっ
て、最大立上り角θは30°以上であることが望まし
い。一方、最大立上り角θを大きすぎると、ボンディン
グワイヤの立上り部に大きな塑性変形が生じ、この塑性
歪みのために長期信頼性が確保できず断線してしまう場
合がある。よって、最大立上り角θは120°以下、特
に100°以下であることが望ましい。
The maximum rising angle θ of the wire 10 is preferably as small as possible in order to make (θ / h) / h 6 or less without increasing the loop height h. In some cases, the rigidity of the wire is increased, so that the displacement difference between the connection electrodes cannot be absorbed, and peeling failure may occur at the bonding wire connection portion. Therefore, the maximum rising angle θ is desirably 30 ° or more. On the other hand, if the maximum rising angle θ is too large, large plastic deformation occurs at the rising portion of the bonding wire, and long-term reliability cannot be ensured due to this plastic strain, and disconnection may occur. Therefore, the maximum rising angle θ is desirably 120 ° or less, and particularly desirably 100 ° or less.

【0030】接続電極7、9間距離が近いと、ボンディ
ングツールの干渉が発生する恐れが生じやすく、また、
この接続電極7、9間距離が長くなるに従い、混成集積
回路装置の外形状も大きくなってしまうため、接続電極
7、9間距離は3〜20mmが適当である。
If the distance between the connection electrodes 7 and 9 is short, there is a possibility that the interference of the bonding tool may occur.
As the distance between the connection electrodes 7 and 9 increases, the outer shape of the hybrid integrated circuit device also increases. Therefore, the distance between the connection electrodes 7 and 9 is suitably 3 to 20 mm.

【0031】また、接続電極7、9の両電極面の高さ
は、ワイヤーボンディング装置によるワイヤ接続性の点
から、実質的に同一高さ、言い換えれば、同一平面内に
存在することが望ましい。
It is desirable that the heights of both electrode surfaces of the connection electrodes 7 and 9 are substantially the same, in other words, in the same plane, from the viewpoint of wire connectivity by a wire bonding apparatus.

【0032】本発明の混成集積回路装置における配線基
板を構成する絶縁基板4としては、過酷な環境下におい
ても優れた耐久性と信頼性を高める上で、セラミックス
からなることが望ましく、具体的には、アルミナ(Al
2 3 )セラミックス、窒化アルミニウム(AlN)セ
ラミックス、窒化珪素(Si3 4 )セラミックス、ム
ライト(3Al2 3 ・2SiO2 )セラミックス、ガ
ラスセラミックスの群から選ばれる少なくとも1種、ま
たは2種以上の複合セラミックス等が好適に使用され
る。
The insulating substrate 4 constituting the wiring substrate in the hybrid integrated circuit device of the present invention is desirably made of ceramics in order to enhance excellent durability and reliability even in a severe environment. Is alumina (Al
At least one selected from the group consisting of 2 O 3 ) ceramics, aluminum nitride (AlN) ceramics, silicon nitride (Si 3 N 4 ) ceramics, mullite (3Al 2 O 3 .2SiO 2 ) ceramics, and glass ceramics Are preferably used.

【0033】配線基板2を構成する配線回路11や接続
電極7は、W、Mo、Mo−Mn、Cu、Alなどの金
属によって構成され、さらに、それらの表面には、Ni
メッキやAuメッキが施されてもよい。特に、接続電極
7の表面やボンディングワイヤとの接続性の点で、Ni
メッキを施し、さらにAuメッキが施されていることが
望ましい。
The wiring circuit 11 and the connection electrodes 7 constituting the wiring board 2 are made of a metal such as W, Mo, Mo-Mn, Cu, or Al.
Plating or Au plating may be applied. In particular, in terms of the connectivity with the surface of the connection electrode 7 and the bonding wire, Ni
It is desirable that plating be performed and further that Au plating be performed.

【0034】配線基板2に接合されるヒートシンク8と
しては、熱膨張率が23×10-6/℃であるアルミニウ
ム(Al)、同じく17×10-6/℃である銅(Cu)
等の金属製、あるいは熱膨張率が5×10-6/℃である
窒化アルミニウム(AlN)や同じく4×10-6/℃で
ある炭化珪素(SiC)等のセラミックス等が挙げら
れ、かかる材料から成るヒートシンク8は、例えばシリ
コーン系の接着剤等で配線基板2と接合される。
The heat sink 8 joined to the wiring board 2 is aluminum (Al) having a coefficient of thermal expansion of 23 × 10 −6 / ° C. and copper (Cu) having a coefficient of thermal expansion of 17 × 10 −6 / ° C.
And ceramics such as aluminum nitride (AlN) having a coefficient of thermal expansion of 5 × 10 −6 / ° C. and silicon carbide (SiC) also having a coefficient of thermal expansion of 4 × 10 −6 / ° C. Is bonded to the wiring board 2 with, for example, a silicone-based adhesive or the like.

【0035】また、前記絶縁性ケース3としては、その
配線基板2の保護、気密性の確保及び外部回路との電気
的接続を行うための接続電極を絶縁保護する上で、有機
樹脂を含有する絶縁材料から構成されることが望まし
い。
The insulating case 3 contains an organic resin in order to protect the wiring board 2, secure airtightness, and insulate and protect connection electrodes for making an electrical connection to an external circuit. It is desirable to be made of an insulating material.

【0036】含有される有機樹脂としては、公知のPP
S樹脂やPBT樹脂などが挙げられる。なお、この絶縁
材料中には、機械的強度等の特性向上のために、20〜
40重量%程度のガラス繊維、カーボン繊維などの無機
繊維、あるいはガラス、SiO2 、Al2 3 、Al
N、Si3 4 、ムライトなどの無機粉末を添加混合し
た複合材であってもよい。
As the organic resin contained, a known PP
S resin, PBT resin, etc. are mentioned. In addition, in order to improve characteristics, such as mechanical strength, this insulating material is 20-.
About 40% by weight of glass fiber, inorganic fiber such as carbon fiber, glass, SiO 2 , Al 2 O 3 , Al
A composite material obtained by adding and mixing an inorganic powder such as N, Si 3 N 4 or mullite may be used.

【0037】ケース3の表面に形成される接続電極9と
しては、銅、あるいは銅を主成分とする公知の合金から
成ることが望ましく、特に、接続電極9の表面は、配線
基板2の接続電極7と同様の理由から、Niメッキおよ
びAuメッキが順次施してあることが望ましい。
It is desirable that the connection electrode 9 formed on the surface of the case 3 be made of copper or a known alloy containing copper as a main component. For the same reason as in No. 7, it is desirable that Ni plating and Au plating are sequentially applied.

【0038】一方、前記ワイヤ10を構成する線材とし
ては、Al、Au、Cuの群から選ばれる少なくとも1
種を主成分とする金属が低抵抗であることから好適に使
用されるが、Auを主成分とする金属の場合には、ボン
ディング時に接続電極を所定温度に加熱する必要性があ
り、また、線径が大きく、またループ長さが長いために
装置面およびコストの点で難しいことから、アルミニウ
ム、銅のいずれかを主成分とする金属、特にアルミニウ
ムを主成分とする金属からなることが最も望ましい。な
お、このワイヤ10としては、上記線材の表面にNiメ
ッキやAuメッキを施してもよい。
On the other hand, the wire constituting the wire 10 is at least one selected from the group consisting of Al, Au and Cu.
Although a metal containing a seed as a main component is preferably used because of its low resistance, in the case of a metal containing Au as a main component, it is necessary to heat a connection electrode to a predetermined temperature during bonding, and Since the wire diameter is large and the loop length is long, it is difficult in terms of equipment and cost, so it is best to use a metal mainly composed of aluminum or copper, especially a metal mainly composed of aluminum. desirable. The wire 10 may be plated with Ni or Au on the surface of the wire.

【0039】また、他の形態として、例えば、アルミニ
ウムワイヤで接続する場合、接続電極7、9の表面に、
42アロイやアルミニウムからなる板片(ポスト)を半
田等で取付け、このポストにワイヤを接続することによ
って、ワイヤによる接続電極との接続信頼性を高めるこ
とができる。
As another form, for example, when connecting with an aluminum wire, the surfaces of the connection electrodes 7 and 9 are
By attaching a plate (post) made of 42 alloy or aluminum with solder or the like and connecting a wire to the post, the reliability of connection of the wire to the connection electrode can be increased.

【0040】また、ワイヤ10によって接続電極7、9
間を接続する場合、ワイヤ10による接続点の高さが実
質的に同一高さからなることが望ましい。これは、接続
点の高さが異なると、ワイヤーボンディング装置のツー
ルが、前記絶縁性ケースや配線基板と干渉し、ボンディ
ング作業が困難となったり、ワイヤが段差部と接触しワ
イヤの断線の原因となる場合がある。なお、実質的に同
一高さとは、接続点における高さの違いが±0.5mm
以内であればよい。
The connection electrodes 7 and 9 are connected by wires 10.
In the case where the connection is made, it is desirable that the connection points of the wires 10 have substantially the same height. This is because if the height of the connection point is different, the tool of the wire bonding apparatus will interfere with the insulating case or the wiring board, making the bonding work difficult or causing the wire to come into contact with the stepped portion and cause the wire to break. It may be. In addition, the difference in height at the connection point is ± 0.5 mm with substantially the same height.
It is good if it is within.

【0041】上記のように、絶縁性ケース3と接続電極
7、9のワイヤ10による接続によって接続した配線基
板2は、ワイヤ10による接続部とともにシリコーン系
ゲルなどの絶縁性ゲル14をケース3内に充填すること
により埋め込まれ、さらに、ケース3の開口部に公知の
PPS樹脂やPBT樹脂、アルミニウム合金等の金属か
らなる蓋体15を接合することによって、ケース3およ
び蓋体15からなる容器内に配線基板2が収納され、混
成集積回路装置となる。
As described above, the wiring board 2 connected to the insulating case 3 and the connection electrodes 7 and 9 by the wires 10 is connected to the insulating gel 14 such as a silicone-based gel in the case 3 together with the connection portion by the wires 10. By filling a cover 15 made of a known metal such as PPS resin, PBT resin, or aluminum alloy into the opening of the case 3, the inside of the container formed of the case 3 and the cover 15 is filled. The wiring board 2 is housed in the hybrid integrated circuit device.

【0042】[0042]

【実施例】次に、本発明の混成集積回路装置を以下に詳
述するようにして評価した。先ず、配線基板の絶縁基体
を作製するにあたり、Al2 3 に対して、助剤として
SiO2 、MgO、CaOを合計で8重量%の割合で添
加した原料粉末に公知の有機バインダーと可塑剤、溶剤
を適量添加して混合し、泥漿を調製した後、該泥漿を周
知のドクターブレード法やカレンダーロール法等のテー
プ成形技術により厚さ約300μmのセラミックグリー
ンシートを成形した。
Next, the hybrid integrated circuit device of the present invention was evaluated as described in detail below. First, in preparing an insulating substrate for a wiring board, a known organic binder and a plasticizer were added to a raw material powder in which SiO 2 , MgO, and CaO were added in a total ratio of 8% by weight to Al 2 O 3 as an auxiliary agent. After adding an appropriate amount of a solvent and mixing to prepare a slurry, the slurry was formed into a ceramic green sheet having a thickness of about 300 μm by a well-known tape forming technique such as a doctor blade method or a calendar roll method.

【0043】次いで、前記セラミックグリーンシートの
所定位置に打ち抜き加工を施してスルーホールを形成し
た。その後、W、Mo等の高融点金属を主成分とする粉
末に、アルミナ粉末を適量添加し、公知の有機バインダ
ーと可塑剤、溶剤を添加混合して調製した金属ペースト
を前記セラミックグリーンシートに所望のパターンでス
クリーン印刷すると共に、スルーホール部分にも、前記
スクリーン印刷あるいは圧力充填法により前記金属ペー
ストを充填した。
Next, a through hole was formed at a predetermined position of the ceramic green sheet by punching. Then, a metal paste prepared by adding an appropriate amount of alumina powder to a powder mainly composed of a high melting point metal such as W or Mo and adding and mixing a known organic binder, a plasticizer, and a solvent to the ceramic green sheet is desired. And the metal paste was also filled into the through-hole portions by the screen printing or pressure filling method.

【0044】次に、前記グリーンシートを積層し、これ
を水素(H2 )と窒素(N2 )の混合ガスから成る還元
性雰囲気中、約1600℃の温度で焼成した後、絶縁基
板の表面に形成した配線回路および接続電極表面に無電
解メッキ法によりNiメッキおよびAuメッキをそれぞ
れ5μm、0.5μmの厚さで施し、さらにその上に銅
ペーストを印刷塗布して約1000℃の温度で焼き付け
処理して、厚さ約1.25mmの配線基板を作製した。
Next, the green sheets are laminated and fired at a temperature of about 1600 ° C. in a reducing atmosphere comprising a mixed gas of hydrogen (H 2 ) and nitrogen (N 2 ). Ni plating and Au plating are applied to the surface of the wiring circuit and the connection electrode formed at a thickness of 5 μm and 0.5 μm, respectively, by an electroless plating method, and then a copper paste is applied thereon by printing and coating at a temperature of about 1000 ° C. By baking, a wiring board having a thickness of about 1.25 mm was produced.

【0045】一方、ヒートシンクとしては、ダイキャス
ト用アルミニウム合金を用い、所定の形状にダイキャス
ト法により成形した。
On the other hand, an aluminum alloy for die casting was used as a heat sink, and was formed into a predetermined shape by die casting.

【0046】他方、絶縁性ケースとして、Cu板からな
る接続電極を金型に入子して30重量%のガラス繊維を
混合したPBT樹脂を用いて射出成形して作製した。
On the other hand, as an insulating case, a connection electrode made of a Cu plate was inserted into a mold and injection-molded using a PBT resin mixed with 30% by weight of glass fiber.

【0047】かくして得られた前記配線基板の裏面に熱
硬化性のシリコーン系接着剤によりヒートシンクと位置
合わせして接着固定した後、さらに、配線基板を絶縁性
ケースに対して、熱硬化性のシリコーン系接着剤で固着
した。
After the wiring substrate thus obtained is aligned and fixed to the heat sink with a thermosetting silicone-based adhesive on the back surface of the wiring substrate, the wiring substrate is further fixed to the insulating case by the thermosetting silicone. It was fixed with a system adhesive.

【0048】その後、ワイヤボンディング法により配線
基板の接続電極と樹脂製ケースの接続電極とを線径30
0μmのアルミニウム線で接続した。
Thereafter, the connection electrode of the wiring board and the connection electrode of the resin case are connected by a wire bonding method to a wire diameter of 30 mm.
The connection was made with a 0 μm aluminum wire.

【0049】この時のワイヤボンディング時のボンディ
ングツールの動きを変えたり、接続後にワイヤループを
上より押圧あるいは引張って強制的にワイヤのループ形
状を調整し表1のように形状の異なるループを形成し
た。その後、樹脂製ケース内にシリコーンゲルを充填し
た後、ケースの開口部に、板金加工により作製したアル
ミニウム合金製の蓋体を接着剤で取り付け、評価用の混
成集積回路装置とした。
At this time, the movement of the bonding tool at the time of wire bonding is changed, or the wire loop is forcibly adjusted by pressing or pulling the wire loop from above after connection to form loops having different shapes as shown in Table 1. did. Then, after filling the silicone gel in the resin case, a lid made of an aluminum alloy manufactured by sheet metal processing was attached to the opening of the case with an adhesive to obtain a hybrid integrated circuit device for evaluation.

【0050】かくして得られた評価用の混成集積回路装
置を用いて、温度範囲が−50℃〜150℃の液槽冷熱
サイクル試験を行い、100サイクルごとに配線基板と
ケースの電極間の電気抵抗を測定し、初期抵抗に対して
抵抗が増大した時のサイクル数を表1に示した。
Using the thus-obtained hybrid integrated circuit device for evaluation, a liquid tank cooling / heating cycle test in a temperature range of −50 ° C. to 150 ° C. was performed, and the electric resistance between the wiring board and the electrode of the case was determined every 100 cycles. Was measured, and the number of cycles when the resistance increased with respect to the initial resistance was shown in Table 1.

【0051】[0051]

【表1】 [Table 1]

【0052】その結果、本発明外の比較例の試料No.1
〜4は、いずれも従来の形状のままループ高さを低くし
た場合であり、800サイクル以下でケースの接続電極
側でワイヤが断線して導通不良となっていた。また、ワ
イヤの線径が500μmよりも大きい試料No.14では
耐久性が極端に低下した。
As a result, the sample No. 1 of the comparative example outside the present invention was obtained.
Nos. 4 to 4 are cases in which the loop height was reduced while keeping the conventional shape, and the wire was disconnected on the connection electrode side of the case in 800 cycles or less, resulting in poor conduction. Further, in Sample No. 14 having a wire diameter larger than 500 μm, the durability was extremely reduced.

【0053】これに対して、本発明では、比較例と同じ
ループ高さであってもワイヤの最大立上り角θを小さく
し(θ/h)/hが6以下となるようにループを形成し
たことにより、1000サイクル以上の接続信頼性が確
保できることが確認できた。さらに、(θ/h)/hが
6以下においても、最大ループ高さが2mm以上、θが
30°〜120°の範囲で前記値が5以下では、150
0サイクル以上、4以下では2500サイクル以上の高
信頼性を有することが確認された。
On the other hand, in the present invention, the loop was formed such that the maximum rising angle θ of the wire was reduced and (θ / h) / h was 6 or less even with the same loop height as the comparative example. Thereby, it was confirmed that connection reliability of 1000 cycles or more can be secured. Further, even when (θ / h) / h is 6 or less, if the maximum loop height is 2 mm or more and θ is in the range of 30 ° to 120 ° and the value is 5 or less, 150
From 0 cycles to 4 cycles, high reliability of 2500 cycles or more was confirmed.

【0054】[0054]

【発明の効果】叙上の如く、本発明の混成集積回路装置
によれば、配線基板とそれを収納する絶縁性ケースとに
それぞれ形成された接続電極をワイヤボンディング法に
よって接続した構造において、ワイヤ形状を特定条件を
満足するように制御することにより、稼働雰囲気が高温
になり易く、温度変化が激しい使用環境条件下でもワイ
ヤの接続電極との接続点付近の歪みの発生が抑えられ、
上記過酷な雰囲気下において長期間稼働してもワイヤ自
体が破断することがなく高い接続信頼性が得られ、これ
によって自動車などの車載用の混成集積回路装置として
の信頼性も同時に高めることができる。
As described above, according to the hybrid integrated circuit device of the present invention, in the structure in which the connection electrodes formed on the wiring board and the insulating case accommodating the wiring board are connected by the wire bonding method, By controlling the shape to satisfy the specific conditions, the operating atmosphere tends to be high temperature, and even under the use environment conditions where the temperature changes sharply, the generation of distortion near the connection point with the connection electrode of the wire is suppressed,
Even if the wire is operated for a long time under the severe atmosphere, the wire itself is not broken, and high connection reliability is obtained, whereby the reliability as a hybrid integrated circuit device for a vehicle such as an automobile can be improved at the same time. .

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の混成集積回路装置の一実施例を示す概
略断面図である。
FIG. 1 is a schematic sectional view showing one embodiment of a hybrid integrated circuit device of the present invention.

【図2】図1の混成集積回路装置におけるワイヤによる
接続部の拡大断面図である。
FIG. 2 is an enlarged cross-sectional view of a connection portion by a wire in the hybrid integrated circuit device of FIG.

【図3】接続電極間のワイヤによる接続方法を説明する
ための図である。
FIG. 3 is a diagram for explaining a connection method using wires between connection electrodes.

【図4】従来の混成集積回路装置を示す概略断面図であ
る。
FIG. 4 is a schematic sectional view showing a conventional hybrid integrated circuit device.

【符号の説明】[Explanation of symbols]

1 混成集積回路装置 2 配線基板 3 絶縁性ケース 4 絶縁基板 5 半導体素子 6 電子部品 7、9 接続電極 8 ヒートシンク 10 ワイヤ 11 配線回路 DESCRIPTION OF SYMBOLS 1 Hybrid integrated circuit device 2 Wiring board 3 Insulating case 4 Insulating substrate 5 Semiconductor element 6 Electronic component 7, 9 Connection electrode 8 Heat sink 10 Wire 11 Wiring circuit

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】絶縁基板の表面に第1の接続電極が設けら
れた配線基板と、前記絶縁基板よりも熱膨張係数の大き
い絶縁材料からなり、内部に前記配線基板を収納すると
ともに、該配線基板の第1の接続電極と対向する位置に
第2の接続電極が設けられてなる絶縁性ケースと、前記
絶縁性ケース内に前記配線基板を封止するための蓋体と
を具備し、前記第1の接続電極と前記第2の接続電極と
をループ形状の線径500μm以下のワイヤによって電
気的に接続してなる混成集積回路装置において、前記ワ
イヤの前記接続電極からの最大立上り角をθ(°)、該
ワイヤの前記接続電極面からの最大ループ高さをh(m
m)とした時、(θ/h)/hで表される値が6以下で
あることを特徴とする混成集積回路装置。
1. A wiring board having a first connection electrode provided on a surface of an insulating substrate, and an insulating material having a thermal expansion coefficient larger than that of the insulating substrate. An insulating case in which a second connection electrode is provided at a position facing the first connection electrode of the substrate, and a lid for sealing the wiring board in the insulating case; In a hybrid integrated circuit device in which a first connection electrode and the second connection electrode are electrically connected by a loop-shaped wire having a wire diameter of 500 μm or less, the maximum rising angle of the wire from the connection electrode is θ. (°), the maximum loop height of the wire from the connection electrode surface is h (m)
m), the value represented by (θ / h) / h is 6 or less.
【請求項2】前記ワイヤの線径が100μm以上である
ことを特徴とする請求項1記載の混成集積回路装置。
2. The hybrid integrated circuit device according to claim 1, wherein said wire has a wire diameter of 100 μm or more.
【請求項3】前記ワイヤがアルミニウムを主成分とする
金属からなることを特徴とする請求項1または請求項2
記載の混成集積回路装置。
3. The wire according to claim 1, wherein the wire is made of a metal containing aluminum as a main component.
A hybrid integrated circuit device as described.
【請求項4】前記第1の接続電極面と前記第2の接続電
極面が、実質的に同一高さであることを特徴とする請求
項1乃至請求項3のいずれか記載の混成集積回路装置。
4. The hybrid integrated circuit according to claim 1, wherein said first connection electrode surface and said second connection electrode surface have substantially the same height. apparatus.
【請求項5】前記配線基板における絶縁基板が、セラミ
ックスからなり、前記絶縁性ケースが、有機樹脂を含有
する絶縁材料からなることを特徴とする請求項1乃至請
求項4のいずれか記載の混成集積回路装置。
5. The hybrid according to claim 1, wherein the insulating substrate of the wiring substrate is made of ceramics, and the insulating case is made of an insulating material containing an organic resin. Integrated circuit device.
【請求項6】車載用として用いられる請求項1乃至請求
項5のいずれか記載の混成集積回路装置。
6. The hybrid integrated circuit device according to claim 1, which is used for a vehicle.
JP11870399A 1999-04-26 1999-04-26 Hybrid integrated circuit device Expired - Fee Related JP3612238B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11870399A JP3612238B2 (en) 1999-04-26 1999-04-26 Hybrid integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11870399A JP3612238B2 (en) 1999-04-26 1999-04-26 Hybrid integrated circuit device

Publications (2)

Publication Number Publication Date
JP2000311916A true JP2000311916A (en) 2000-11-07
JP3612238B2 JP3612238B2 (en) 2005-01-19

Family

ID=14743058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11870399A Expired - Fee Related JP3612238B2 (en) 1999-04-26 1999-04-26 Hybrid integrated circuit device

Country Status (1)

Country Link
JP (1) JP3612238B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005022557A1 (en) * 2003-09-01 2005-03-10 Yasuyuki Ozaki On-vehicle electromagnetic circuit conduction transmission body and connection structure body and assembly, and production methods therefor
US8578774B2 (en) 2010-01-13 2013-11-12 Denso Corporation Physical quantity sensor including bonding wire with vibration isolation performance characteristics
US9704768B2 (en) 2013-12-17 2017-07-11 Mitsubishi Electric Corporation Power semiconductor module
EP3907758A1 (en) * 2020-05-08 2021-11-10 Infineon Technologies AG Semiconductor die, semiconductor switching assembly and method of manufacturing

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005022557A1 (en) * 2003-09-01 2005-03-10 Yasuyuki Ozaki On-vehicle electromagnetic circuit conduction transmission body and connection structure body and assembly, and production methods therefor
US8578774B2 (en) 2010-01-13 2013-11-12 Denso Corporation Physical quantity sensor including bonding wire with vibration isolation performance characteristics
US9704768B2 (en) 2013-12-17 2017-07-11 Mitsubishi Electric Corporation Power semiconductor module
EP3907758A1 (en) * 2020-05-08 2021-11-10 Infineon Technologies AG Semiconductor die, semiconductor switching assembly and method of manufacturing

Also Published As

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