JP3612238B2 - Hybrid integrated circuit device - Google Patents

Hybrid integrated circuit device Download PDF

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Publication number
JP3612238B2
JP3612238B2 JP11870399A JP11870399A JP3612238B2 JP 3612238 B2 JP3612238 B2 JP 3612238B2 JP 11870399 A JP11870399 A JP 11870399A JP 11870399 A JP11870399 A JP 11870399A JP 3612238 B2 JP3612238 B2 JP 3612238B2
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Japan
Prior art keywords
wire
connection electrode
integrated circuit
circuit device
hybrid integrated
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Expired - Fee Related
Application number
JP11870399A
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Japanese (ja)
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JP2000311916A (en
Inventor
良博 竹下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Aisin AW Co Ltd
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Kyocera Corp
Aisin AW Co Ltd
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Priority to JP11870399A priority Critical patent/JP3612238B2/en
Publication of JP2000311916A publication Critical patent/JP2000311916A/en
Application granted granted Critical
Publication of JP3612238B2 publication Critical patent/JP3612238B2/en
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    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/2076—Diameter ranges equal to or larger than 100 microns

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  • Wire Bonding (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は、 半導体素子が収容搭載される半導体素子収納用パッケージや、半導体素子の他にコンデンサや抵抗体等の各種電子部品が搭載される混成集積回路基板などのセラミック配線基板を、絶縁性のケースと蓋体とから成る容器内に封止してなり、特に自動車などの車載用として好適な混成集積回路装置に関するものであって、特に、前記セラミック配線基板と絶縁性ケースとのボンディングワイヤによる接続信頼性を高めるための改良に関する。
【０００２】
【従来技術】
従来より、混成集積回路装置は、半導体素子収納用パッケージや複数の各種電子部品を搭載した混成集積回路基板等から成る配線基板を適宜、所定の容器に封入することにより構成されている。
【０００３】
かかる混成集積回路装置としては、例えば、図４に示すように、半導体素子２０や抵抗素子などの各種電子部品２１から発生する熱を外部に放熱するために、半導体素子２０や電子部品２１を搭載した配線基板２２の裏面にヒートシンク２３が取着されている。そして、ヒートシンク２３が取着された配線基板２２は、絶縁性ケース２４内に収納される。
【０００４】
また、配線基板２２の表面には、外部回路と接続するための接続電極２５が被着形成されており、絶縁性ケース２４には、配線基板２２の接続電極２５と電気的に接続するために、配線基板２２の接続電極２５と対向する位置に、ケース側接続電極２６が形成されている。そして、この接続電極２５とケース側接続電極２６とは、ワイヤボンディング法などによって、アルミニウムなどの金属からなる線径が約１００μｍ〜５００μｍの大径のワイヤ２７によって電気的に接続されている。また、ケース２４内の配線基板２２およびワイヤ２７による接続部は保護用ゲル材２８によって埋設され、蓋体２９をケース２４の開口部に接合して封止することにより集積回路装置となる。
【０００５】
【発明が解決しようとする課題】
ところが、上記従来の混成集積回路装置では、稼働中の雰囲気温度の急激な変化や、半導体素子２０や電子部品２１の発熱による温度変化等で、前記ケース２４が熱変形を起こし、該ケース２４の接続電極２６と配線基板２２の接続電極２５との接続を担うワイヤ２７が断線するという問題があった。
【０００６】
例えば、混成集積回路装置を構成する配線基板の絶縁基板がアルミナ（Ａｌ２ Ｏ３ ）セラミックスの場合、熱膨張率は約７×１０−６／℃であり、ケース材として代表されるＰＢＴ樹脂の熱膨張率は５０×１０−６／℃であることから、前述のような温度変化によりケース２４の伸縮が配線基板２２のそれより極めて大きいために、前記ワイヤ２７のケース側接続電極２６との接続点に大きな歪みが発生する。そして、温度変化が繰り返し発生するような環境に保持されると、この歪みが繰り返し発生することから、やがてワイヤ２７のケース側接続電極２６との接続点付近で断線してしまうのである。
【０００７】
そのために、ワイヤ２７による接続構造では、稼働雰囲気が高温になり易く、温度変化が激しい自動車などの車載用の混成集積回路装置としては、高い接続信頼性を確保することが非常に困難であった。
【０００８】
このような課題に対しては、配線基板を収納するケースを、所定方向に配向した強化用繊維と、該強化用繊維の配向方向を変更するためのじゃま板とを備えて構成された混成集積回路装置が特開平１−３９０４９号公報にて提案されているが、このようなケースの構造や材質の変更による対策は、部品点数、部品コストの増加及び工数の増加を招き、量産性に問題が発生することが多く、より簡単な対策が必要とされてきた。
【０００９】
また、構造を変更することなくボンディングワイヤの耐久接続信頼性を確保する方法として、ワイヤのループ高さｈを高くする方法が知られている。しかし、装置の小型化が進み、収容空間の高さが制約されたり、ワイヤの保護のための保護用ゲル材２８が多量に必要になるなどの問題があり、限られた収容空間内で大径のワイヤによる接続法による高い耐久性を有する接続信頼性を確保するのは非常に困難であった。
【００１０】
従って、発明の目的は、稼働雰囲気が高温になり易く、温度変化の激しい環境下においても、ケースの接続電極と、配線基板の接続電極とを接続するワイヤが断線することなく、高い接続信頼性を有する混成集積回路装置を提供することにある。
【００１１】
【課題を解決するための手段】
本発明者は、前記課題を解決するためにワイヤによる接続構造について検討を重ねた結果、ワイヤによる接続信頼性がループ高さｈのみでなく、ケース側の接続電極におけるワイヤの立上り角θに大きく依存することに着目し、また、ワイヤの破断寿命が（θ／ｈ）／ｈが小さくなるほど長くなることを見出し、本発明に至った。
【００１２】
即ち、本発明の混成集積回路装置は、絶縁基板の表面に第１の接続電極が設けられた配線基板と、前記絶縁基板よりも熱膨張係数の大きい絶縁材料からなり、内部に前記配線基板を収納するとともに、該配線基板の第１の接続電極と対向する位置に第２の接続電極が設けられてなる絶縁性ケースと、前記絶縁性ケース内に前記配線基板を封止するための蓋体とを具備し、前記第１の接続電極と前記第２の接続電極とをループ形状の線径が５００μｍ以下のワイヤによって電気的に接続してなる混成集積回路装置において、前記ワイヤがアルミニウム、金、銅の群から選ばれる少なくとも１種を主成分とする金属からなり、前記ワイヤの前記接続電極からの最大立上り角をθ（°）、該ワイヤの前記接続電極面からの最大ループ高さをｈ（ｍｍ）とした時、（θ／ｈ）／ｈで表される値が６以下であることを特徴とするものであり、特に、前記ワイヤの線径が１００μｍ以下であること、前記ワイヤがアルミニウムを主成分とする金属からなること、前記第１の接続電極面と前記第２の接続電極面が、実質的に同一高さであること、前記配線基板における絶縁基板がセラミックスからなり、前記前記絶縁性ケースが、有機樹脂を含有する絶縁材料からなること等をさらなる特徴とするものであり、また、かかる混成集積回路装置は、車載用として好適に用いられるものである。
【００１３】
【作用】
配線基板における接続電極と、配線基板を収納するケースにおける接続電極とのワイヤによる接続構造において、接続電極との接続点付近でのワイヤの断線は、配線基板の絶縁基板とケースとの熱膨張差によって、接続電極間の距離が繰り返し変化することにより、ワイヤの電極との接続点付近に塑性歪みが蓄積し、ワイヤが疲労破壊することによるものである。
【００１４】
このワイヤの接続電極との接続点付近の塑性歪みは、ループの高さｈが大きいほど、また接続電極におけるワイヤの最大立上り角θが小さいほど、小さくなる傾向がある。具体的には、（θ／ｈ）／ｈに比例して塑性歪みも小さくなる。この原理から、（θ／ｈ）／ｈの値を小さいする、言い換えれば、ワイヤの最大ループ高さｈに対して、ワイヤの最大立上り角θを小さくすることによって、ワイヤのループ高さを高くすることなしに、ワイヤの長期接続信頼性を向上させることができる。また、この構造によれば、配線基板やケースなどの構造を変更する必要がないために生産性の問題点も発生することがない。
【００１５】
また、かかる構造は、ワイヤの線径が５００μｍよりも大きい場合には、ワイヤの剛性が高くなり接続電極間の変位差をワイヤが吸収できないために断線しやすくなるためにワイヤの線径が５００μｍであることが必要である。なお、ワイヤとして、アルミニウムを主成分とする金属によって構成することにより、ボンディング作業を容易にできるとともに、製品コストを低減できる。
【００１６】
さらに、前記第１の接続電極面と前記第２の接続電極面とは、実質的に同一高さであることが、ワイヤボンディング法による生産性を高める上で望ましい。
【００１７】
また、上記の構成は、前記配線基板における絶縁基板が、セラミックスからなり、前記絶縁性ケースが、有機樹脂を含有する絶縁材料からなる場合において、最も有効的である。
【００１８】
かかる構成によれば、高温および低温雰囲気に晒される過酷な条件下においても優れた接続信頼性を発揮することができ、特に、自動車等のエンジン制御やトランスミッション制御、シャーシー制御などを担う車載用の混成集積回路装置に最も好適に使用される。
【００１９】
【発明の実施の形態】
以下、本発明の混成集積回路装置を図面に基づき詳細に説明する。
図１は、本発明の混成集積回路装置の概略断面図である。図１において、１は、混成集積回路装置、２は配線基板、３は絶縁性ケースである。配線基板２によれば、絶縁基板４の表面には、配線回路１１が被着形成され、絶縁基板４の表面に搭載された半導体素子５や抵抗素子などの電子部品６等と電気的に接続されて電気回路が形成されている。また、配線基板２の端部には、外部回路と接続するための接続電極７が被着形成されている。
【００２０】
また、配線基板２の裏面には、表面に搭載された半導体素子５や電子部品６から発生した熱を放散させるために高熱伝導性セラミックスからなるヒートシンク８が接合されている。
【００２１】
また、上記配線基板２は、絶縁性ケース３内にて、配線基板２に接合されたヒートシンクがケース３の下面から露出するようにして収納固定されている。また、絶縁性ケース３の配線基板２における接続電極７と対向するケース３の表面に、接続電極９が形成されており、この接続電極９は、ケース３に設けられた接続端子（図示せず）と電気的に接続されている。
【００２２】
そして、配線基板２側の接続電極７と、ケース３側の接続電極９とは、線径が１００〜５００μｍのワイヤ１０によって電気的に接続されている。このワイヤ１０による接続は、一般的なワイヤボンディング装置によって行われる。
【００２３】
このワイヤーボンディング装置によれば、図３（ａ）に示すように、まず、接続電極９に超音波ボンディング用ツール１２によってクランプ１３により保持されたワイヤ１０を接続する。次に、図３（ｂ）に示すように、ツール１２を移動させ、接続電極７にワイヤ１０をボンディング接続し、図３（ｃ）に示すようにワイヤ１０の端部を切断することにより、接続電極７、９をループ形状のワイヤ１０によって接続することができる。なお、超音波ボンディング用ツール１２による接続の順序としては、接続電極７から接続電極９に接続してもよい。
【００２４】
本発明によれば、上記ループ形状において、図２に示すように、接続電極７、９におけるループ形状の内側におけるワイヤ１０の立上り角θ１ 、θ２ のうち、大きい方の角度（図２ではθ１ ）を最大立上り角θ（°）、ループ形状の接続電極７、９面からのループ形状の頂点までの高さのうち、大きい方の高さを最大ループ高さｈ（ｍｍ）とした時、（θ／ｈ）／ｈで表される値が、６以下、特に５以下、さらには４以下であることが重要である。
【００２５】
これは、接続電極７、９間の接続信頼性を高める上で重要であり、上記の値が６よりも大きいと、立上り角の大きい接続部に大きな塑性歪みが発生し、ワイヤ１０の立上り角の大きい接続電極側で断線が発生しやすくなり、接続信頼性が確保できなくなる。
【００２６】
また、ワイヤ１０の線径は５００μｍ以下、特に４００μｍ以下であることも重要である。これは、ワイヤの線径が５００μｍよりも大きいと、ワイヤ１０自体の剛性が高くなってしまい接続電極７、９間の変位差をワイヤ１０自体が吸収できず断線を引き起こすためである。なお、ワイヤ１０の線径は１００μｍ以上であることが望ましい。これは、ワイヤ１０の線径が１００μｍよりも細すぎると、一般的に混成集積回路に対して適用される０．１Ａ以上の電流に対してワイヤが許容できず、接続電極７、９間を２本以上のワイヤによって接続する必要が生じ、その結果、工数、コストが増えてしまうためである。
【００２７】
なお、上記ワイヤ１０の最大ループ高さｈが低すぎると装置的にループ形状を形成することが困難であると同時に接続電極７、９間の変位差を十分に吸収できず断線してしまう恐れがあるため２ｍｍ以上であることが望ましい。一方、最大ループ高さが高すぎると、混成集積回路装置の外形状が大きくなる他、ワイヤの腐食防止に用いる保護ゲルの必要量が多くなり、コスト高につながるといった問題が生じるためこの高さは１０ｍｍ以下が適当である。
【００２８】
この最大ループ高さ位置は、特に限定するものではないが、図２に示したように超音波ボンディングツールによって、ケース３の接続電極９から配線基板２側の接続電極７にワイヤを接続する場合、最大ループ高さ位置は、接続電極７、９の中間位置よりもケース３の接続電極９側にシフトする。逆に、配線基板２側の接続電極７からケース３の接続電極９にワイヤを接続する場合、最大ループ高さ位置は、接続電極７、９の中間位置よりも配線基板２の接続電極７側にシフトする。
【００２９】
ワイヤ１０の上記最大立上り角θは、ループ高さｈを高くすることなく（θ／ｈ）／ｈを６以下にするためにはできるだけ小さい方がよいが、あまりにも小さすぎるとボンディングワイヤの剛性が高くなってしまい接続電極間の変位差を吸収できずボンディングワイヤ接続部での剥離破壊を生じてしまう場合がある。よって、最大立上り角θは３０°以上であることが望ましい。一方、最大立上り角θを大きすぎると、ボンディングワイヤの立上り部に大きな塑性変形が生じ、この塑性歪みのために長期信頼性が確保できず断線してしまう場合がある。よって、最大立上り角θは１２０°以下、特に１００°以下であることが望ましい。
【００３０】
接続電極７、９間距離が近いと、ボンディングツールの干渉が発生する恐れが生じやすく、また、この接続電極７、９間距離が長くなるに従い、混成集積回路装置の外形状も大きくなってしまうため、接続電極７、９間距離は３〜２０ｍｍが適当である。
【００３１】
また、接続電極７、９の両電極面の高さは、ワイヤーボンディング装置によるワイヤ接続性の点から、実質的に同一高さ、言い換えれば、同一平面内に存在することが望ましい。
【００３２】
本発明の混成集積回路装置における配線基板を構成する絶縁基板４としては、過酷な環境下においても優れた耐久性と信頼性を高める上で、セラミックスからなることが望ましく、具体的には、アルミナ（Ａｌ２ Ｏ３ ）セラミックス、窒化アルミニウム（ＡｌＮ）セラミックス、窒化珪素（Ｓｉ３ Ｎ４ ）セラミックス、ムライト（３Ａｌ２ Ｏ３ ・２ＳｉＯ２ ）セラミックス、ガラスセラミックスの群から選ばれる少なくとも１種、または２種以上の複合セラミックス等が好適に使用される。
【００３３】
配線基板２を構成する配線回路１１や接続電極７は、Ｗ、Ｍｏ、Ｍｏ−Ｍｎ、Ｃｕ、Ａｌなどの金属によって構成され、さらに、それらの表面には、ＮｉメッキやＡｕメッキが施されてもよい。特に、接続電極７の表面やボンディングワイヤとの接続性の点で、Ｎｉメッキを施し、さらにＡｕメッキが施されていることが望ましい。
【００３４】
配線基板２に接合されるヒートシンク８としては、熱膨張率が２３×１０−６／℃であるアルミニウム（Ａｌ）、同じく１７×１０−６／℃である銅（Ｃｕ）等の金属製、あるいは熱膨張率が５×１０−６／℃である窒化アルミニウム（ＡｌＮ）や同じく４×１０−６／℃である炭化珪素（ＳｉＣ）等のセラミックス等が挙げられ、かかる材料から成るヒートシンク８は、例えばシリコーン系の接着剤等で配線基板２と接合される。
【００３５】
また、前記絶縁性ケース３としては、その配線基板２の保護、気密性の確保及び外部回路との電気的接続を行うための接続電極を絶縁保護する上で、有機樹脂を含有する絶縁材料から構成されることが望ましい。
【００３６】
含有される有機樹脂としては、公知のＰＰＳ樹脂やＰＢＴ樹脂などが挙げられる。なお、この絶縁材料中には、機械的強度等の特性向上のために、２０〜４０重量％程度のガラス繊維、カーボン繊維などの無機繊維、あるいはガラス、ＳｉＯ２ 、Ａｌ２ Ｏ３ 、ＡｌＮ、Ｓｉ３ Ｎ４ 、ムライトなどの無機粉末を添加混合した複合材であってもよい。
【００３７】
ケース３の表面に形成される接続電極９としては、銅、あるいは銅を主成分とする公知の合金から成ることが望ましく、特に、接続電極９の表面は、配線基板２の接続電極７と同様の理由から、ＮｉメッキおよびＡｕメッキが順次施してあることが望ましい。
【００３８】
一方、前記ワイヤ１０を構成する線材としては、Ａｌ、Ａｕ、Ｃｕの群から選ばれる少なくとも１種を主成分とする金属が低抵抗であることから好適に使用されるが、Ａｕを主成分とする金属の場合には、ボンディング時に接続電極を所定温度に加熱する必要性があり、また、線径が大きく、またループ長さが長いために装置面およびコストの点で難しいことから、アルミニウム、銅のいずれかを主成分とする金属、特にアルミニウムを主成分とする金属からなることが最も望ましい。なお、このワイヤ１０としては、上記線材の表面にＮｉメッキやＡｕメッキを施してもよい。
【００３９】
また、他の形態として、例えば、アルミニウムワイヤで接続する場合、接続電極７、９の表面に、４２アロイやアルミニウムからなる板片（ポスト）を半田等で取付け、このポストにワイヤを接続することによって、ワイヤによる接続電極との接続信頼性を高めることができる。
【００４０】
また、ワイヤ１０によって接続電極７、９間を接続する場合、ワイヤ１０による接続点の高さが実質的に同一高さからなることが望ましい。これは、接続点の高さが異なると、ワイヤーボンディング装置のツールが、前記絶縁性ケースや配線基板と干渉し、ボンディング作業が困難となったり、ワイヤが段差部と接触しワイヤの断線の原因となる場合がある。なお、実質的に同一高さとは、接続点における高さの違いが±０．５ｍｍ以内であればよい。
【００４１】
上記のように、絶縁性ケース３と接続電極７、９のワイヤ１０による接続によって接続した配線基板２は、ワイヤ１０による接続部とともにシリコーン系ゲルなどの絶縁性ゲル１４をケース３内に充填することにより埋め込まれ、さらに、ケース３の開口部に公知のＰＰＳ樹脂やＰＢＴ樹脂、アルミニウム合金等の金属からなる蓋体１５を接合することによって、ケース３および蓋体１５からなる容器内に配線基板２が収納され、混成集積回路装置となる。
【００４２】
【実施例】
次に、本発明の混成集積回路装置を以下に詳述するようにして評価した。
先ず、配線基板の絶縁基体を作製するにあたり、Ａｌ２ Ｏ３ に対して、助剤としてＳｉＯ２ 、ＭｇＯ、ＣａＯを合計で８重量％の割合で添加した原料粉末に公知の有機バインダーと可塑剤、溶剤を適量添加して混合し、泥漿を調製した後、該泥漿を周知のドクターブレード法やカレンダーロール法等のテープ成形技術により厚さ約３００μｍのセラミックグリーンシートを成形した。
【００４３】
次いで、前記セラミックグリーンシートの所定位置に打ち抜き加工を施してスルーホールを形成した。その後、Ｗ、Ｍｏ等の高融点金属を主成分とする粉末に、アルミナ粉末を適量添加し、公知の有機バインダーと可塑剤、溶剤を添加混合して調製した金属ペーストを前記セラミックグリーンシートに所望のパターンでスクリーン印刷すると共に、スルーホール部分にも、前記スクリーン印刷あるいは圧力充填法により前記金属ペーストを充填した。
【００４４】
次に、前記グリーンシートを積層し、これを水素（Ｈ２ ）と窒素（Ｎ２ ）の混合ガスから成る還元性雰囲気中、約１６００℃の温度で焼成した後、絶縁基板の表面に形成した配線回路および接続電極表面に無電解メッキ法によりＮｉメッキおよびＡｕメッキをそれぞれ５μｍ、０．５μｍの厚さで施し、さらにその上に銅ペーストを印刷塗布して約１０００℃の温度で焼き付け処理して、厚さ約１．２５ｍｍの配線基板を作製した。
【００４５】
一方、ヒートシンクとしては、ダイキャスト用アルミニウム合金を用い、所定の形状にダイキャスト法により成形した。
【００４６】
他方、絶縁性ケースとして、Ｃｕ板からなる接続電極を金型に入子して３０重量％のガラス繊維を混合したＰＢＴ樹脂を用いて射出成形して作製した。
【００４７】
かくして得られた前記配線基板の裏面に熱硬化性のシリコーン系接着剤によりヒートシンクと位置合わせして接着固定した後、さらに、配線基板を絶縁性ケースに対して、熱硬化性のシリコーン系接着剤で固着した。
【００４８】
その後、ワイヤボンディング法により配線基板の接続電極と樹脂製ケースの接続電極とを線径３００μｍのアルミニウム線で接続した。
【００４９】
この時のワイヤボンディング時のボンディングツールの動きを変えたり、接続後にワイヤループを上より押圧あるいは引張って強制的にワイヤのループ形状を調整し表１のように形状の異なるループを形成した。その後、樹脂製ケース内にシリコーンゲルを充填した後、ケースの開口部に、板金加工により作製したアルミニウム合金製の蓋体を接着剤で取り付け、評価用の混成集積回路装置とした。
【００５０】
かくして得られた評価用の混成集積回路装置を用いて、温度範囲が−５０℃〜１５０℃の液槽冷熱サイクル試験を行い、１００サイクルごとに配線基板とケースの電極間の電気抵抗を測定し、初期抵抗に対して抵抗が増大した時のサイクル数を表１に示した。
【００５１】
【表１】

Figure 0003612238
【００５２】
その結果、本発明外の比較例の試料Ｎｏ．１〜４は、いずれも従来の形状のままループ高さを低くした場合であり、８００サイクル以下でケースの接続電極側でワイヤが断線して導通不良となっていた。また、ワイヤの線径が５００μｍよりも大きい試料Ｎｏ．１４では耐久性が極端に低下した。
【００５３】
これに対して、本発明では、比較例と同じループ高さであってもワイヤの最大立上り角θを小さくし（θ／ｈ）／ｈが６以下となるようにループを形成したことにより、１０００サイクル以上の接続信頼性が確保できることが確認できた。さらに、（θ／ｈ）／ｈが６以下においても、最大ループ高さが２ｍｍ以上、θが３０°〜１２０°の範囲で前記値が５以下では、１５００サイクル以上、４以下では２５００サイクル以上の高信頼性を有することが確認された。
【００５４】
【発明の効果】
叙上の如く、本発明の混成集積回路装置によれば、配線基板とそれを収納する絶縁性ケースとにそれぞれ形成された接続電極をワイヤボンディング法によって接続した構造において、ワイヤ形状を特定条件を満足するように制御することにより、稼働雰囲気が高温になり易く、温度変化が激しい使用環境条件下でもワイヤの接続電極との接続点付近の歪みの発生が抑えられ、上記過酷な雰囲気下において長期間稼働してもワイヤ自体が破断することがなく高い接続信頼性が得られ、これによって自動車などの車載用の混成集積回路装置としての信頼性も同時に高めることができる。
【図面の簡単な説明】
【図１】本発明の混成集積回路装置の一実施例を示す概略断面図である。
【図２】図１の混成集積回路装置におけるワイヤによる接続部の拡大断面図である。
【図３】接続電極間のワイヤによる接続方法を説明するための図である。
【図４】従来の混成集積回路装置を示す概略断面図である。
【符号の説明】
１ 混成集積回路装置
２ 配線基板
３ 絶縁性ケース
４ 絶縁基板
５ 半導体素子
６ 電子部品
７、９ 接続電極
８ ヒートシンク
１０ ワイヤ
１１ 配線回路[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor element housing package in which a semiconductor element is accommodated and a ceramic wiring board such as a hybrid integrated circuit board in which various electronic components such as a capacitor and a resistor are mounted in addition to the semiconductor element. The present invention relates to a hybrid integrated circuit device which is sealed in a container composed of a case and a lid, and particularly suitable for in-vehicle use such as an automobile, and in particular, by a bonding wire between the ceramic wiring board and the insulating case The present invention relates to an improvement for improving connection reliability.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, a hybrid integrated circuit device is configured by appropriately enclosing a wiring board composed of a semiconductor element storage package, a hybrid integrated circuit board mounted with a plurality of various electronic components, and the like in a predetermined container.
[0003]
As such a hybrid integrated circuit device, for example, as shown in FIG. 4, the semiconductor element 20 and the electronic component 21 are mounted in order to dissipate heat generated from various electronic components 21 such as the semiconductor element 20 and the resistance element to the outside. A heat sink 23 is attached to the back surface of the wiring board 22. The wiring board 22 to which the heat sink 23 is attached is housed in an insulating case 24.
[0004]
In addition, a connection electrode 25 for connecting to an external circuit is formed on the surface of the wiring board 22, and the insulating case 24 is electrically connected to the connection electrode 25 of the wiring board 22. A case side connection electrode 26 is formed at a position facing the connection electrode 25 of the wiring board 22. The connection electrode 25 and the case-side connection electrode 26 are electrically connected by a large-diameter wire 27 having a wire diameter of about 100 μm to 500 μm made of a metal such as aluminum by a wire bonding method or the like. In addition, the connection portion by the wiring substrate 22 and the wire 27 in the case 24 is embedded by a protective gel material 28, and the lid 29 is joined to the opening of the case 24 and sealed to form an integrated circuit device.
[0005]
[Problems to be solved by the invention]
However, in the conventional hybrid integrated circuit device, the case 24 undergoes thermal deformation due to a rapid change in ambient temperature during operation, a temperature change due to heat generation of the semiconductor element 20 or the electronic component 21, and the like. There was a problem that the wire 27 responsible for connection between the connection electrode 26 and the connection electrode 25 of the wiring board 22 was disconnected.
[0006]
For example, when the insulating substrate of the wiring board constituting the hybrid integrated circuit device is alumina (Al 2 O 3 ) ceramics, the coefficient of thermal expansion is about 7 × 10 −6 / ° C., and the PBT resin represented by the case material is used. Since the coefficient of thermal expansion is 50 × 10 −6 / ° C., the expansion and contraction of the case 24 is extremely larger than that of the wiring board 22 due to the temperature change as described above. A large distortion occurs at the connection point. When the temperature is kept in an environment where the change of temperature repeatedly occurs, the distortion is repeatedly generated, and eventually the wire 27 is disconnected near the connection point of the case side connection electrode 26.
[0007]
Therefore, in the connection structure using the wires 27, it is very difficult to ensure high connection reliability as a vehicle-mounted hybrid integrated circuit device such as an automobile in which the operating atmosphere is likely to become high temperature and the temperature changes rapidly. .
[0008]
For such a problem, the case where the wiring board is accommodated is a hybrid integrated structure comprising reinforcing fibers oriented in a predetermined direction and baffles for changing the orientation direction of the reinforcing fibers. A circuit device has been proposed in Japanese Patent Application Laid-Open No. 1-339049. However, such a countermeasure by changing the structure and material of the case leads to an increase in the number of parts, the cost of parts, and the increase in the number of man-hours. In many cases, simpler countermeasures have been required.
[0009]
Further, as a method for ensuring the durable connection reliability of the bonding wire without changing the structure, a method for increasing the loop height h of the wire is known. However, there is a problem that the size of the apparatus is reduced, the height of the accommodation space is restricted, and a large amount of the protective gel material 28 for protecting the wire is required. It has been very difficult to ensure connection reliability having high durability by a connection method using a wire having a diameter.
[0010]
Therefore, the object of the invention is to provide high connection reliability without disconnection of the wire connecting the connection electrode of the case and the connection electrode of the wiring board even in an environment in which the operating atmosphere is likely to become high temperature and the temperature changes severely. It is another object of the present invention to provide a hybrid integrated circuit device.
[0011]
[Means for Solving the Problems]
As a result of repeated studies on a connection structure using wires in order to solve the above-described problems, the reliability of connection by wires is not only large in the loop height h but also in the rising angle θ of the wire in the connection electrode on the case side. Focusing on the dependence, it was found that the breaking life of the wire becomes longer as (θ / h) / h becomes smaller, and the present invention has been achieved.
[0012]
In other words, the hybrid integrated circuit device of the present invention comprises a wiring board having a first connection electrode provided on the surface of an insulating substrate, and an insulating material having a thermal expansion coefficient larger than that of the insulating substrate. An insulating case in which a second connection electrode is provided at a position facing the first connection electrode of the wiring board, and a lid for sealing the wiring board in the insulating case comprising the door, in the first hybrid integrated circuit device in which electrically connected by the connection electrode and the second connection electrode and a following wire the wire diameter of the loop shape 500 [mu] m, the wire is aluminum, gold , Made of a metal mainly composed of at least one selected from the group of copper, the maximum rising angle of the wire from the connection electrode is θ (°), the maximum loop height of the wire from the connection electrode surface h (mm) The value represented by (θ / h) / h is 6 or less, in particular, the wire diameter of the wire is 100 μm or less, and the wire is mainly composed of aluminum. The first connection electrode surface and the second connection electrode surface have substantially the same height, the insulating substrate in the wiring substrate is made of ceramics, and the insulating case However, it is further characterized in that it is made of an insulating material containing an organic resin, and such a hybrid integrated circuit device is suitably used for in-vehicle use.
[0013]
[Action]
In the connection structure with wires between the connection electrodes on the wiring board and the connection electrodes in the case that houses the wiring board, the disconnection of the wire near the connection point with the connection electrode is caused by the difference in thermal expansion between the insulating board of the wiring board and the case. As a result, the distance between the connection electrodes repeatedly changes, so that plastic strain accumulates in the vicinity of the connection point of the wire with the electrode, and the wire is fatigued.
[0014]
The plastic strain near the connection point of the wire with the connection electrode tends to decrease as the loop height h increases and as the maximum rising angle θ of the wire at the connection electrode decreases. Specifically, the plastic strain is also reduced in proportion to (θ / h) / h. From this principle, the value of (θ / h) / h is decreased, in other words, the wire rising height is increased by decreasing the maximum rising angle θ of the wire with respect to the maximum loop height h of the wire. Without this, the long-term connection reliability of the wire can be improved. Further, according to this structure, there is no need to change the structure of the wiring board, the case, etc., so that there is no problem with productivity.
[0015]
In addition, in such a structure, when the wire diameter is larger than 500 μm, the rigidity of the wire becomes high and the wire cannot absorb the displacement difference between the connection electrodes, and therefore the wire diameter is 500 μm. It is necessary to be. Note that the wire is made of a metal whose main component is aluminum, so that the bonding work can be facilitated and the product cost can be reduced.
[0016]
Furthermore, it is desirable that the first connection electrode surface and the second connection electrode surface have substantially the same height in order to increase productivity by the wire bonding method.
[0017]
Further, the above configuration is most effective when the insulating substrate in the wiring substrate is made of ceramics and the insulating case is made of an insulating material containing an organic resin.
[0018]
According to such a configuration, excellent connection reliability can be exhibited even under severe conditions exposed to high temperature and low temperature atmospheres, and particularly for in-vehicle use that is responsible for engine control, transmission control, chassis control, etc. of automobiles. Most preferably used in hybrid integrated circuit devices.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, a hybrid integrated circuit device of the present invention will be described in detail with reference to the drawings.
FIG. 1 is a schematic sectional view of a hybrid integrated circuit device of the present invention. In FIG. 1, 1 is a hybrid integrated circuit device, 2 is a wiring board, and 3 is an insulating case. According to the wiring board 2, the wiring circuit 11 is formed on the surface of the insulating substrate 4, and is electrically connected to an electronic component 6 such as a semiconductor element 5 or a resistance element mounted on the surface of the insulating substrate 4. Thus, an electric circuit is formed. In addition, a connection electrode 7 for connecting to an external circuit is deposited on the end of the wiring board 2.
[0020]
Further, a heat sink 8 made of high thermal conductive ceramics is joined to the back surface of the wiring board 2 in order to dissipate heat generated from the semiconductor elements 5 and the electronic components 6 mounted on the front surface.
[0021]
The wiring board 2 is housed and fixed in the insulating case 3 so that the heat sink bonded to the wiring board 2 is exposed from the lower surface of the case 3. A connection electrode 9 is formed on the surface of the case 3 facing the connection electrode 7 in the wiring substrate 2 of the insulating case 3. The connection electrode 9 is connected to a connection terminal (not shown) provided in the case 3. ) And are electrically connected.
[0022]
The connection electrode 7 on the wiring board 2 side and the connection electrode 9 on the case 3 side are electrically connected by a wire 10 having a wire diameter of 100 to 500 μm. The connection by the wire 10 is performed by a general wire bonding apparatus.
[0023]
According to this wire bonding apparatus, as shown in FIG. 3A, first, the wire 10 held by the clamp 13 is connected to the connection electrode 9 by the ultrasonic bonding tool 12. Next, as shown in FIG. 3B, the tool 12 is moved, the wire 10 is bonded to the connection electrode 7, and the end of the wire 10 is cut as shown in FIG. The connection electrodes 7 and 9 can be connected by a loop-shaped wire 10. In addition, as an order of connection by the ultrasonic bonding tool 12, the connection electrode 7 may be connected to the connection electrode 9.
[0024]
According to the present invention, in the above loop shape, as shown in FIG. 2, the larger one of the rising angles θ 1 and θ 2 of the wire 10 inside the loop shape in the connection electrodes 7 and 9 (in FIG. 2, θ 1 ) is the maximum rising angle θ (°), and the larger one of the heights from the loop-shaped connection electrodes 7 and 9 to the top of the loop shape is defined as the maximum loop height h (mm). It is important that the value represented by (θ / h) / h is 6 or less, particularly 5 or less, and even 4 or less.
[0025]
This is important for improving the connection reliability between the connection electrodes 7 and 9. When the above value is larger than 6, a large plastic strain is generated in the connection portion having a large rising angle, and the rising angle of the wire 10 is increased. Disconnection is likely to occur on the connection electrode side having a large size, and connection reliability cannot be ensured.
[0026]
It is also important that the wire 10 has a wire diameter of 500 μm or less, particularly 400 μm or less. This is because if the wire diameter is larger than 500 μm, the rigidity of the wire 10 itself becomes high, and the wire 10 itself cannot absorb the displacement difference between the connection electrodes 7 and 9, causing disconnection. The wire diameter of the wire 10 is desirably 100 μm or more. This is because if the wire diameter of the wire 10 is too small than 100 μm, the wire cannot be allowed for a current of 0.1 A or more generally applied to a hybrid integrated circuit, and the connection electrodes 7, 9 are not connected. This is because it is necessary to connect with two or more wires, resulting in an increase in man-hours and costs.
[0027]
If the maximum loop height h of the wire 10 is too low, it is difficult to form a loop shape systematically, and at the same time, the displacement difference between the connection electrodes 7 and 9 cannot be sufficiently absorbed and the wire may be broken. Therefore, it is desirable to be 2 mm or more. On the other hand, if the maximum loop height is too high, the outer shape of the hybrid integrated circuit device becomes large, and the amount of protective gel used to prevent corrosion of the wires increases, leading to problems such as high costs. Is suitably 10 mm or less.
[0028]
The maximum loop height position is not particularly limited, but when a wire is connected from the connection electrode 9 of the case 3 to the connection electrode 7 on the wiring board 2 side by an ultrasonic bonding tool as shown in FIG. The maximum loop height position is shifted to the connection electrode 9 side of the case 3 from the intermediate position of the connection electrodes 7 and 9. Conversely, when a wire is connected from the connection electrode 7 on the wiring board 2 side to the connection electrode 9 of the case 3, the maximum loop height position is closer to the connection electrode 7 side of the wiring board 2 than the intermediate position between the connection electrodes 7 and 9. Shift to.
[0029]
The maximum rise angle θ of the wire 10 is preferably as small as possible in order to make (θ / h) / h 6 or less without increasing the loop height h, but if it is too small, the rigidity of the bonding wire May become high and the displacement difference between the connection electrodes cannot be absorbed, and the peeling failure at the bonding wire connection portion may occur. Therefore, it is desirable that the maximum rising angle θ is 30 ° or more. On the other hand, if the maximum rising angle θ is too large, a large plastic deformation occurs at the rising portion of the bonding wire, and long-term reliability cannot be ensured due to this plastic strain, which may cause disconnection. Therefore, it is desirable that the maximum rising angle θ is 120 ° or less, particularly 100 ° or less.
[0030]
If the distance between the connection electrodes 7 and 9 is short, there is a risk of causing interference of the bonding tool, and the outer shape of the hybrid integrated circuit device increases as the distance between the connection electrodes 7 and 9 increases. Therefore, the distance between the connection electrodes 7 and 9 is suitably 3 to 20 mm.
[0031]
Moreover, it is desirable that the heights of both electrode surfaces of the connection electrodes 7 and 9 are substantially the same height, in other words, in the same plane, from the viewpoint of wire connectivity by the wire bonding apparatus.
[0032]
The insulating substrate 4 constituting the wiring substrate in the hybrid integrated circuit device of the present invention is preferably made of ceramics in order to enhance excellent durability and reliability even in a harsh environment, specifically, alumina. (Al 2 O 3 ) ceramics, aluminum nitride (AlN) ceramics, silicon nitride (Si 3 N 4 ) ceramics, mullite (3Al 2 O 3 · 2SiO 2 ) ceramics, at least one selected from the group of glass ceramics, or 2 More than one kind of composite ceramics and the like are preferably used.
[0033]
The wiring circuit 11 and the connection electrode 7 constituting the wiring board 2 are made of metal such as W, Mo, Mo—Mn, Cu, and Al, and further, Ni plating or Au plating is applied to the surface thereof. Also good. In particular, from the viewpoint of connectivity with the surface of the connection electrode 7 and the bonding wire, it is desirable that Ni plating is performed and Au plating is further performed.
[0034]
The heat sink 8 bonded to the wiring board 2 is made of metal such as aluminum (Al) having a thermal expansion coefficient of 23 × 10 −6 / ° C., copper (Cu) which is also 17 × 10 −6 / ° C., or Ceramics such as aluminum nitride (AlN) having a thermal expansion coefficient of 5 × 10 −6 / ° C. and silicon carbide (SiC) having the same coefficient of 4 × 10 −6 / ° C. can be cited. For example, the wiring board 2 is joined with a silicone-based adhesive or the like.
[0035]
The insulating case 3 is made of an insulating material containing an organic resin for protecting the wiring substrate 2, securing airtightness, and insulating and protecting the connection electrode for electrical connection with an external circuit. Desirably configured.
[0036]
Examples of the organic resin contained include known PPS resins and PBT resins. In this insulating material, in order to improve characteristics such as mechanical strength, about 20 to 40% by weight of glass fiber, inorganic fiber such as carbon fiber, glass, SiO 2 , Al 2 O 3 , AlN, A composite material in which inorganic powder such as Si 3 N 4 and mullite is added and mixed may be used.
[0037]
The connection electrode 9 formed on the surface of the case 3 is preferably made of copper or a known alloy mainly composed of copper. In particular, the surface of the connection electrode 9 is the same as the connection electrode 7 of the wiring board 2. For this reason, it is desirable that Ni plating and Au plating are sequentially applied.
[0038]
On the other hand, as the wire constituting the wire 10, a metal mainly composed of at least one selected from the group consisting of Al, Au, and Cu is preferably used because of its low resistance. In the case of the metal to be used, it is necessary to heat the connection electrode to a predetermined temperature at the time of bonding, and since the wire diameter is large and the loop length is long, it is difficult in terms of the device surface and cost, aluminum, Most preferably, it is made of a metal containing copper as a main component, particularly a metal containing aluminum as a main component. In addition, as this wire 10, you may give Ni plating and Au plating to the surface of the said wire.
[0039]
As another form, for example, when connecting with an aluminum wire, a plate piece (post) made of 42 alloy or aluminum is attached to the surface of the connection electrodes 7 and 9 with solder or the like, and the wire is connected to this post. Thus, the connection reliability with the connection electrode by the wire can be improved.
[0040]
When connecting the connection electrodes 7 and 9 with the wire 10, it is desirable that the height of the connection point by the wire 10 is substantially the same height. This is because if the height of the connection point is different, the tool of the wire bonding apparatus may interfere with the insulating case or the wiring board, making bonding work difficult, or causing the wire to come into contact with the stepped portion and causing the wire to break. It may become. In addition, the substantially same height should just have the difference of the height in a connection point within +/- 0.5mm.
[0041]
As described above, the wiring substrate 2 connected by the connection of the insulating case 3 and the connection electrodes 7 and 9 with the wire 10 fills the case 3 with the insulating gel 14 such as silicone gel together with the connection portion with the wire 10. In addition, a lid 15 made of a metal such as a known PPS resin, PBT resin, or aluminum alloy is joined to the opening of the case 3, whereby a wiring board is placed in the container made of the case 3 and the lid 15. 2 is housed to form a hybrid integrated circuit device.
[0042]
【Example】
Next, the hybrid integrated circuit device of the present invention was evaluated as described in detail below.
First, in producing an insulating substrate of a wiring board, a known organic binder and plasticizer are added to a raw material powder in which SiO 2 , MgO, and CaO are added in a proportion of 8% by weight as auxiliary agents to Al 2 O 3 . An appropriate amount of solvent was added and mixed to prepare a slurry, and then the slurry was formed into a ceramic green sheet having a thickness of about 300 μm by a tape forming technique such as a doctor blade method or a calender roll method.
[0043]
Next, a through hole was formed by punching a predetermined position of the ceramic green sheet. Then, a desired amount of alumina paste is added to the powder containing refractory metal such as W and Mo as a main component, and a metal paste prepared by adding and mixing a known organic binder, plasticizer and solvent is desired for the ceramic green sheet. And through-holes were filled with the metal paste by the screen printing or pressure filling method.
[0044]
Next, the green sheets are stacked and fired at a temperature of about 1600 ° C. in a reducing atmosphere composed of a mixed gas of hydrogen (H 2 ) and nitrogen (N 2 ), and then formed on the surface of the insulating substrate. Ni plating and Au plating are applied to the surface of the wiring circuit and connection electrodes by electroless plating to a thickness of 5 μm and 0.5 μm, respectively, and copper paste is printed and applied thereon, followed by baking at a temperature of about 1000 ° C. Thus, a wiring board having a thickness of about 1.25 mm was produced.
[0045]
On the other hand, as the heat sink, an aluminum alloy for die casting was used and formed into a predetermined shape by a die casting method.
[0046]
On the other hand, as an insulating case, a connection electrode made of a Cu plate was inserted into a mold and injection molded using a PBT resin mixed with 30% by weight of glass fiber.
[0047]
After aligning and fixing to the heat sink with a thermosetting silicone adhesive on the back surface of the wiring board thus obtained, the thermosetting silicone adhesive is further attached to the insulating case. It was fixed with.
[0048]
Then, the connection electrode of the wiring board and the connection electrode of the resin case were connected by an aluminum wire having a wire diameter of 300 μm by a wire bonding method.
[0049]
At this time, the movement of the bonding tool at the time of wire bonding was changed, or the wire loop was pressed or pulled from above after connection to forcibly adjust the loop shape of the wire to form loops having different shapes as shown in Table 1. Thereafter, after filling the resin case with silicone gel, an aluminum alloy lid body produced by sheet metal processing was attached to the opening of the case with an adhesive to obtain a hybrid integrated circuit device for evaluation.
[0050]
Using the hybrid integrated circuit device for evaluation thus obtained, a liquid bath cooling / heating cycle test with a temperature range of −50 ° C. to 150 ° C. is performed, and the electrical resistance between the wiring board and the electrode of the case is measured every 100 cycles. Table 1 shows the number of cycles when the resistance increased with respect to the initial resistance.
[0051]
[Table 1]
Figure 0003612238
[0052]
As a result, the sample No. of the comparative example outside the present invention. 1-4 are cases where the loop height was lowered with the conventional shape, and the wire was disconnected on the connection electrode side of the case in 800 cycles or less, resulting in poor conduction. Sample No. with a wire diameter larger than 500 μm was used. In 14 the durability was extremely reduced.
[0053]
On the other hand, in the present invention, even when the loop height is the same as that of the comparative example, the maximum rising angle θ of the wire is reduced, and the loop is formed so that (θ / h) / h is 6 or less. It was confirmed that connection reliability of 1000 cycles or more could be secured. Further, even when (θ / h) / h is 6 or less, the maximum loop height is 2 mm or more, and when θ is in the range of 30 ° to 120 °, the value is 5 or less, 1500 cycles or more, and 4 or less, 2500 cycles or more. It was confirmed to have high reliability.
[0054]
【The invention's effect】
As described above, according to the hybrid integrated circuit device of the present invention, in the structure in which the connection electrodes respectively formed on the wiring board and the insulating case for housing the wiring board are connected by the wire bonding method, the wire shape is specified as a specific condition. By controlling to satisfy, the working atmosphere is likely to become high temperature, and even under the usage environment conditions where the temperature changes drastically, the occurrence of distortion near the connection point of the wire connection electrode can be suppressed. Even if it operates for a period of time, the wire itself does not break, and high connection reliability is obtained. Thereby, the reliability as an in-vehicle hybrid integrated circuit device such as an automobile can be improved at the same time.
[Brief description of the drawings]
FIG. 1 is a schematic sectional view showing an embodiment of a hybrid integrated circuit device of the present invention.
2 is an enlarged cross-sectional view of a connecting portion using wires in the hybrid integrated circuit device of FIG. 1; FIG.
FIG. 3 is a diagram for explaining a connection method using wires between connection electrodes;
FIG. 4 is a schematic cross-sectional view showing a conventional hybrid integrated circuit device.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Hybrid integrated circuit device 2 Wiring board 3 Insulating case 4 Insulating board 5 Semiconductor element 6 Electronic component 7, 9 Connection electrode 8 Heat sink 10 Wire 11 Wiring circuit

Claims (6)

絶縁基板の表面に第１の接続電極が設けられた配線基板と、前記絶縁基板よりも熱膨張係数の大きい絶縁材料からなり、内部に前記配線基板を収納するとともに、該配線基板の第１の接続電極と対向する位置に第２の接続電極が設けられてなる絶縁性ケースと、前記絶縁性ケース内に前記配線基板を封止するための蓋体とを具備し、前記第１の接続電極と前記第２の接続電極とをループ形状の線径５００μｍ以下のワイヤによって電気的に接続してなる混成集積回路装置において、前記ワイヤがアルミニウム、金、銅の群から選ばれる少なくとも１種を主成分とする金属からなり、前記ワイヤの前記接続電極からの最大立上り角をθ（°）、該ワイヤの前記接続電極面からの最大ループ高さをｈ（ｍｍ）とした時、（θ／ｈ）／ｈで表される値が６以下であることを特徴とする混成集積回路装置。A wiring board having a first connection electrode provided on the surface of the insulating board, and an insulating material having a thermal expansion coefficient larger than that of the insulating board, housing the wiring board therein, and An insulating case in which a second connection electrode is provided at a position facing the connection electrode; and a lid for sealing the wiring board in the insulating case, the first connection electrode And the second connection electrode are electrically connected by a loop-shaped wire having a diameter of 500 μm or less, and the wire is mainly made of at least one selected from the group consisting of aluminum, gold, and copper. When the maximum rising angle of the wire from the connection electrode is θ (°) and the maximum loop height of the wire from the connection electrode surface is h (mm), (θ / h) ) / H Hybrid integrated circuit device, characterized in that 6 or less. 前記ワイヤの線径が１００μｍ以上であることを特徴とする請求項１記載の混成集積回路装置。The hybrid integrated circuit device according to claim 1, wherein the wire has a wire diameter of 100 μm or more. 前記ワイヤがアルミニウムを主成分とする金属からなることを特徴とする請求項１または請求項２記載の混成集積回路装置。3. The hybrid integrated circuit device according to claim 1, wherein the wire is made of a metal mainly composed of aluminum. 前記第１の接続電極面と前記第２の接続電極面が、実質的に同一高さであることを特徴とする請求項１乃至請求項３のいずれか記載の混成集積回路装置。4. The hybrid integrated circuit device according to claim 1, wherein the first connection electrode surface and the second connection electrode surface have substantially the same height. 前記配線基板における絶縁基板が、セラミックスからなり、前記絶縁性ケースが、有機樹脂を含有する絶縁材料からなることを特徴とする請求項１乃至請求項４のいずれか記載の混成集積回路装置。5. The hybrid integrated circuit device according to claim 1, wherein the insulating substrate of the wiring substrate is made of ceramics, and the insulating case is made of an insulating material containing an organic resin. 車載用として用いられる請求項１乃至請求項５のいずれか記載の混成集積回路装置。The hybrid integrated circuit device according to claim 1, wherein the hybrid integrated circuit device is used for in-vehicle use.
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