JP2000305247A5 - - Google Patents

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Publication number
JP2000305247A5
JP2000305247A5 JP1999114939A JP11493999A JP2000305247A5 JP 2000305247 A5 JP2000305247 A5 JP 2000305247A5 JP 1999114939 A JP1999114939 A JP 1999114939A JP 11493999 A JP11493999 A JP 11493999A JP 2000305247 A5 JP2000305247 A5 JP 2000305247A5
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JP
Japan
Prior art keywords
photomask
phase
degrees
degree
light
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JP1999114939A
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English (en)
Japanese (ja)
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JP4402195B2 (ja
JP2000305247A (ja
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Priority to JP11493999A priority Critical patent/JP4402195B2/ja
Priority claimed from JP11493999A external-priority patent/JP4402195B2/ja
Publication of JP2000305247A publication Critical patent/JP2000305247A/ja
Publication of JP2000305247A5 publication Critical patent/JP2000305247A5/ja
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Publication of JP4402195B2 publication Critical patent/JP4402195B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP11493999A 1999-04-22 1999-04-22 フォトマスク、パターン形成方法及びデバイス製造方法 Expired - Fee Related JP4402195B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11493999A JP4402195B2 (ja) 1999-04-22 1999-04-22 フォトマスク、パターン形成方法及びデバイス製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11493999A JP4402195B2 (ja) 1999-04-22 1999-04-22 フォトマスク、パターン形成方法及びデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2000305247A JP2000305247A (ja) 2000-11-02
JP2000305247A5 true JP2000305247A5 (enExample) 2006-06-01
JP4402195B2 JP4402195B2 (ja) 2010-01-20

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ID=14650402

Family Applications (1)

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JP11493999A Expired - Fee Related JP4402195B2 (ja) 1999-04-22 1999-04-22 フォトマスク、パターン形成方法及びデバイス製造方法

Country Status (1)

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JP (1) JP4402195B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4950411B2 (ja) * 2003-07-01 2012-06-13 大日本印刷株式会社 光学リソグラフィー用ボルテックス位相シフトマスク
US7560197B2 (en) 2004-02-23 2009-07-14 Kabushiki Kaisha Toshiba Mask pattern data producing method, patterning method, reticle correcting method, reticle manufacturing method, and semiconductor apparatus manufacturing method
TW200636820A (en) 2005-04-04 2006-10-16 Adv Lcd Tech Dev Ct Co Ltd Thin film transistor, integrated circuit, liquid crystal display, method of producing thin film transistor, and method of exposure using attenuated type mask
JP2007103108A (ja) * 2005-10-03 2007-04-19 Sii Nanotechnology Inc 集束イオンビームによる加工方法
JP2010102354A (ja) * 2009-12-24 2010-05-06 Dainippon Printing Co Ltd 光学リソグラフィー用ボルテックス位相シフトマスク
CN103370654B (zh) * 2010-11-16 2015-09-02 尤利塔股份公司 用于印刷高分辨率二维周期性图案的方法和装置
US20120237858A1 (en) * 2011-03-18 2012-09-20 Nanya Technology Corporation Photomask and a method for determining a pattern of a photomask
JP5757413B2 (ja) * 2011-06-29 2015-07-29 大日本印刷株式会社 位相変調マスク、露光装置および露光方法
JP5838622B2 (ja) * 2011-07-05 2016-01-06 大日本印刷株式会社 露光装置および露光方法

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