JP2000305247A5 - - Google Patents
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- JP2000305247A5 JP2000305247A5 JP1999114939A JP11493999A JP2000305247A5 JP 2000305247 A5 JP2000305247 A5 JP 2000305247A5 JP 1999114939 A JP1999114939 A JP 1999114939A JP 11493999 A JP11493999 A JP 11493999A JP 2000305247 A5 JP2000305247 A5 JP 2000305247A5
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- photomask
- phase
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- degree
- light
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- 239000000758 substrate Substances 0.000 description 6
- 230000003287 optical Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Description
【特許請求の範囲】
【請求項1】 露光波長λ、開口数NAの光学系を有する投影露光装置で用いられるフォトマスクであって、該フォトマスク上のパターンは縦横方向に周期dを有する二次元格子状の4個の領域を有し、当該4個の領域はこれらを透過する光束が、時計回り、或いは反時計回りの方向において、0、π/2、π、3π/2[ラジアン]の相対位相を有するように構成してあり、更に、
【数1】
の関係を満足することを特徴とするフォトマスク。
【請求項2】 露光波長λ、開口数NAの光学系を有する投影露光装置で用いられるフォトマスクであって、該フォトマスク上のパターンは縦横方向に周期dを有する二次元格子状の複数の領域から構成され、該複数の領域から任意に抽出した縦2、横2の隣接する4個の領域を透過する光束は、時計回り、或いは反時計回りの方向において、0、π/2、π、3π/2[ラジアン]の相対位相を有しており、更に、
【数2】
の関係を満足することを特徴とするフォトマスク。
【請求項3】 前記パターンは透明な基板上に形成され、該基板の厚さ分布を制御することにより、前記0、π/2、π、3π/2[ラジアン]の相対位相を発生させることを特徴とする請求項1又は2に記載のフォトマスク。
【請求項4】 前記複数の領域の各々の全面は、開口部であることを特徴とする請求項1乃至3のいずれか1項に記載のフォトマスク。
【請求項5】 前記複数の領域の各々は、遮光部と該遮光部に囲まれた開口部を有することを特徴とする請求項1乃至3のいずれか1項に記載のフォトマスク。
【請求項6】 基板上にパターンを形成するパターン形成方法において、請求項1乃至5のいずれか1項に記載のフォトマスクを原板として用いて基板を露光する工程を有することを特徴とするパターン形成方法。
【請求項7】 請求項6に記載のパターン形成方法を用いてデバイスのデバイスパターンを感光基板上に転写するステップと、前記感光基板を現像するステップとを有することを特徴とするデバイスの製造方法。
[Claims]
1. A photomask used in a projection exposure apparatus having an optical system having an exposure wavelength λ and a numerical aperture NA, and four patterns on the photomask are two-dimensional lattice-like patterns having a period d in the vertical and horizontal directions. The four regions have relative phases of 0, π / 2, π, 3π / 2 [radian] in the clockwise or counterclockwise direction of the light beam transmitted through them. In addition,
[Number 1]
A photomask characterized by satisfying the relationship between.
2. A photomask used in a projection exposure apparatus having an optical system having an exposure wavelength of λ and a numerical aperture of NA, wherein the pattern on the photomask is a plurality of two-dimensional lattice-like patterns having a period d in the vertical and horizontal directions. The light beam that is composed of regions and that passes through four adjacent regions of length 2 and width 2 that are arbitrarily extracted from the plurality of regions is 0, π / 2, π in the clockwise or counterclockwise direction. It has a relative phase of 3, π / 2 [radian], and further
[Number 2]
A photomask characterized by satisfying the relationship between.
3. The pattern is formed on a transparent substrate, and by controlling the thickness distribution of the substrate, the relative phases of 0, π / 2, π, and 3π / 2 [radians] are generated. The photomask according to claim 1 or 2.
4. The photomask according to claim 1, wherein the entire surface of each of the plurality of regions is an opening.
5. The photomask according to claim 1, wherein each of the plurality of regions has a light-shielding portion and an opening surrounded by the light-shielding portion.
6. The pattern forming method for forming a pattern on a substrate includes a step of exposing the substrate using the photomask according to any one of claims 1 to 5 as a base plate. Forming method.
7. A step of transferring the devices in the device pattern on a photosensitive substrate using the pattern forming method according to claim 6, a device manufacturing method characterized by a step of developing the photosensitive substrate ..
ここで本発明のフォトマスクの特徴を説明する。図1に示すように、25個の開口部は、そこを透過した光束に対して4種類の位相変化を与える。まず、2で示す開口からの透過光を位相0として、他の部分の位相を表現する上での基準とする。そうすると、3で示す開口からの透過光は、開口2の透過光に比べて90度位相が進んでいる。同様に、4で示す開口からの透過光は180度、5で示す開口からの透過光は270度位相が進んでいる。使用する光の波長をλとすれば、90度の位相差はλ/4、180度の位相差はλ/2、270度の位相差は3λ/4に対応する。更にフォトマスクの特徴として、縦2、横2の隣接する4つの開口部に着目した場合、何れの位置においても、透過光の位相が0度→90度→180度→270度→0度、或いは、0度→270度→180度→90度→0度と規則的に変化していることが挙げられる。本発明のフォトマスクは、透過光の位相を制御しているという意味で一種の位相シフトマスクということもできるが、その構成が図14に示した従来の位相シフトマスクとは全く異なることは明らかである。 Here, the features of the photomask of the present invention will be described. As shown in FIG. 1, the 25 openings give four kinds of phase changes to the light flux transmitted through the openings. First, the transmitted light from the aperture shown in 2 is set to phase 0, and is used as a reference for expressing the phase of other parts. Then, the transmitted light from the aperture shown in 3 is 90 degrees out of phase with the transmitted light in the opening 2. Similarly, the transmitted light from the aperture indicated by 4 has a phase of 180 degrees, and the transmitted light from the aperture indicated by 5 has a phase advance of 270 degrees. Assuming that the wavelength of light used is λ, a 90 degree phase difference corresponds to λ / 4, a 180 degree phase difference corresponds to λ / 2, and a 270 degree phase difference corresponds to 3λ / 4. Furthermore, as a feature of the photomask, when focusing on four adjacent openings of vertical 2 and horizontal 2, the phase of the transmitted light is 0 degrees → 90 degrees → 180 degrees → 270 degrees → 0 degrees at any position. Alternatively, it can be mentioned that it changes regularly in the order of 0 degree → 270 degree → 180 degree → 90 degree → 0 degree. The photomask of the present invention can be said to be a kind of phase shift mask in the sense that it controls the phase of transmitted light, but it is clear that its configuration is completely different from the conventional phase shift mask shown in FIG. Is.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11493999A JP4402195B2 (en) | 1999-04-22 | 1999-04-22 | Photomask, pattern forming method, and device manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11493999A JP4402195B2 (en) | 1999-04-22 | 1999-04-22 | Photomask, pattern forming method, and device manufacturing method |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2000305247A JP2000305247A (en) | 2000-11-02 |
JP2000305247A5 true JP2000305247A5 (en) | 2006-06-01 |
JP4402195B2 JP4402195B2 (en) | 2010-01-20 |
Family
ID=14650402
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11493999A Expired - Fee Related JP4402195B2 (en) | 1999-04-22 | 1999-04-22 | Photomask, pattern forming method, and device manufacturing method |
Country Status (1)
Country | Link |
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JP (1) | JP4402195B2 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4950411B2 (en) * | 2003-07-01 | 2012-06-13 | 大日本印刷株式会社 | Vortex phase shift mask for optical lithography |
US7560197B2 (en) | 2004-02-23 | 2009-07-14 | Kabushiki Kaisha Toshiba | Mask pattern data producing method, patterning method, reticle correcting method, reticle manufacturing method, and semiconductor apparatus manufacturing method |
TW200636820A (en) | 2005-04-04 | 2006-10-16 | Adv Lcd Tech Dev Ct Co Ltd | Thin film transistor, integrated circuit, liquid crystal display, method of producing thin film transistor, and method of exposure using attenuated type mask |
JP2007103108A (en) * | 2005-10-03 | 2007-04-19 | Sii Nanotechnology Inc | Processing method by focusing ion beam |
JP2010102354A (en) * | 2009-12-24 | 2010-05-06 | Dainippon Printing Co Ltd | Vortex phase shift mask for photolithography |
KR101755758B1 (en) * | 2010-11-16 | 2017-07-07 | 유리타 아. 게. | Method and apparatus for printing high-resolution two-dimensional periodic patterns |
US20120237858A1 (en) * | 2011-03-18 | 2012-09-20 | Nanya Technology Corporation | Photomask and a method for determining a pattern of a photomask |
JP5757413B2 (en) * | 2011-06-29 | 2015-07-29 | 大日本印刷株式会社 | Phase modulation mask, exposure apparatus and exposure method |
JP5838622B2 (en) * | 2011-07-05 | 2016-01-06 | 大日本印刷株式会社 | Exposure apparatus and exposure method |
-
1999
- 1999-04-22 JP JP11493999A patent/JP4402195B2/en not_active Expired - Fee Related
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