JP2000298347A5 - - Google Patents

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Publication number
JP2000298347A5
JP2000298347A5 JP1999283271A JP28327199A JP2000298347A5 JP 2000298347 A5 JP2000298347 A5 JP 2000298347A5 JP 1999283271 A JP1999283271 A JP 1999283271A JP 28327199 A JP28327199 A JP 28327199A JP 2000298347 A5 JP2000298347 A5 JP 2000298347A5
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JP
Japan
Prior art keywords
photoresist
group
polymer
carbon atoms
alkyl
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JP1999283271A
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English (en)
Japanese (ja)
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JP4421710B2 (ja
JP2000298347A (ja
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Priority claimed from US09/143,462 external-priority patent/US6136501A/en
Application filed filed Critical
Publication of JP2000298347A publication Critical patent/JP2000298347A/ja
Publication of JP2000298347A5 publication Critical patent/JP2000298347A5/ja
Application granted granted Critical
Publication of JP4421710B2 publication Critical patent/JP4421710B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP28327199A 1998-08-28 1999-08-30 新規なポリマー及びそれらを含有してなるフォトレジスト組成物 Expired - Lifetime JP4421710B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US143462 1998-08-28
US09/143,462 US6136501A (en) 1998-08-28 1998-08-28 Polymers and photoresist compositions comprising same

Publications (3)

Publication Number Publication Date
JP2000298347A JP2000298347A (ja) 2000-10-24
JP2000298347A5 true JP2000298347A5 (US20040106767A1-20040603-C00005.png) 2006-10-12
JP4421710B2 JP4421710B2 (ja) 2010-02-24

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ID=22504190

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28327199A Expired - Lifetime JP4421710B2 (ja) 1998-08-28 1999-08-30 新規なポリマー及びそれらを含有してなるフォトレジスト組成物

Country Status (3)

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US (1) US6136501A (US20040106767A1-20040603-C00005.png)
JP (1) JP4421710B2 (US20040106767A1-20040603-C00005.png)
KR (1) KR100735889B1 (US20040106767A1-20040603-C00005.png)

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EP2204694A1 (en) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
EP2204392A1 (en) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
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US9851639B2 (en) 2012-03-31 2017-12-26 International Business Machines Corporation Photoacid generating polymers containing a urethane linkage for lithography
US9171720B2 (en) 2013-01-19 2015-10-27 Rohm And Haas Electronic Materials Llc Hardmask surface treatment
US9136123B2 (en) 2013-01-19 2015-09-15 Rohm And Haas Electronic Materials Llc Hardmask surface treatment
JP6421449B2 (ja) 2013-05-20 2018-11-14 Jsr株式会社 感放射線性樹脂組成物、レジストパターン形成方法、酸発生体及び化合物
KR102248827B1 (ko) 2013-05-20 2021-05-07 제이에스알 가부시끼가이샤 감방사선성 수지 조성물, 레지스트 패턴 형성 방법, 산 발생체 및 화합물
JP6304246B2 (ja) 2013-05-24 2018-04-04 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
JP6572899B2 (ja) 2014-09-17 2019-09-11 Jsr株式会社 パターン形成方法
KR20170059992A (ko) 2014-09-17 2017-05-31 제이에스알 가부시끼가이샤 패턴 형성 방법
US9244345B1 (en) 2014-11-06 2016-01-26 International Business Machines Corporation Non-ionic photo-acid generating polymers for resist applications
KR101785426B1 (ko) 2015-04-30 2017-10-17 롬엔드하스전자재료코리아유한회사 포토레지스트 조성물 및 방법
KR102648061B1 (ko) 2015-12-01 2024-03-18 제이에스알 가부시끼가이샤 감방사선성 조성물, 패턴 형성 방법 및 감방사선성 산 발생제
US10113024B2 (en) 2015-12-21 2018-10-30 Dow Global Technologies Llc Arylcyclobutenes
US10120277B2 (en) 2016-02-19 2018-11-06 Jsr Corporation Radiation-sensitive composition and pattern-forming method
KR20170098173A (ko) 2016-02-19 2017-08-29 제이에스알 가부시끼가이샤 감방사선성 조성물 및 패턴 형성 방법
KR102341492B1 (ko) 2016-03-03 2021-12-22 제이에스알 가부시끼가이샤 감방사선성 수지 조성물, 레지스트 패턴 형성 방법, 감방사선성 산 발생제 및 화합물
JPWO2018043506A1 (ja) 2016-08-29 2019-06-24 Jsr株式会社 感放射線性組成物及びパターン形成方法
US11480878B2 (en) 2016-08-31 2022-10-25 Rohm And Haas Electronic Materials Korea Ltd. Monomers, polymers and photoresist compositions
KR20190099429A (ko) 2016-12-28 2019-08-27 제이에스알 가부시끼가이샤 감방사선성 조성물, 패턴 형성 방법 및 금속 산화물
KR20190099428A (ko) 2016-12-28 2019-08-27 제이에스알 가부시끼가이샤 감방사선성 조성물, 패턴 형성 방법 그리고 금속 함유 수지 및 그의 제조 방법
CN108264605A (zh) 2016-12-30 2018-07-10 罗门哈斯电子材料韩国有限公司 单体、聚合物和光致抗蚀剂组合物
WO2018139109A1 (ja) 2017-01-26 2018-08-02 Jsr株式会社 感放射線性組成物及びパターン形成方法
KR20190124205A (ko) 2017-03-13 2019-11-04 제이에스알 가부시끼가이샤 감방사선성 조성물 및 패턴 형성 방법
KR102482292B1 (ko) 2017-03-30 2022-12-29 제이에스알 가부시끼가이샤 감방사선성 조성물 및 레지스트 패턴 형성 방법
KR20190129916A (ko) 2017-04-11 2019-11-20 제이에스알 가부시끼가이샤 감방사선성 조성물 및 레지스트 패턴 형성 방법
KR20200039665A (ko) 2017-08-10 2020-04-16 제이에스알 가부시끼가이샤 감방사선성 조성물 및 레지스트 패턴 형성 방법
JP6730417B2 (ja) 2017-12-31 2020-07-29 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトレジスト組成物および方法
WO2022202402A1 (ja) 2021-03-26 2022-09-29 Jsr株式会社 半導体基板の製造方法及びレジスト下層膜形成用組成物
KR20230165224A (ko) 2021-04-01 2023-12-05 제이에스알 가부시끼가이샤 반도체 기판의 제조 방법 및 레지스트 하층막 형성용 조성물
US11874603B2 (en) 2021-09-15 2024-01-16 Rohm And Haas Electronic Materials Korea Ltd. Photoresist composition comprising amide compound and pattern formation methods using the same
JPWO2023089946A1 (US20040106767A1-20040603-C00005.png) 2021-11-16 2023-05-25

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