JP2000298347A5 - - Google Patents
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- Publication number
- JP2000298347A5 JP2000298347A5 JP1999283271A JP28327199A JP2000298347A5 JP 2000298347 A5 JP2000298347 A5 JP 2000298347A5 JP 1999283271 A JP1999283271 A JP 1999283271A JP 28327199 A JP28327199 A JP 28327199A JP 2000298347 A5 JP2000298347 A5 JP 2000298347A5
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- group
- polymer
- carbon atoms
- alkyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920002120 photoresistant polymer Polymers 0.000 description 30
- 229920000642 polymer Polymers 0.000 description 16
- 125000004432 carbon atom Chemical group C* 0.000 description 12
- 125000004185 ester group Chemical group 0.000 description 10
- 125000000217 alkyl group Chemical group 0.000 description 9
- 125000002015 acyclic group Chemical group 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 150000001721 carbon Chemical group 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 3
- ZHUXMBYIONRQQX-UHFFFAOYSA-N hydroxidodioxidocarbon(.) Chemical group [O]C(O)=O ZHUXMBYIONRQQX-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 125000002950 monocyclic group Chemical group 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 125000005647 linker group Chemical group 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 125000000582 cycloheptyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000000640 cyclooctyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M methacrylate group Chemical group C(C(=C)C)(=O)[O-] CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US143462 | 1988-01-13 | ||
| US09/143,462 US6136501A (en) | 1998-08-28 | 1998-08-28 | Polymers and photoresist compositions comprising same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000298347A JP2000298347A (ja) | 2000-10-24 |
| JP2000298347A5 true JP2000298347A5 (OSRAM) | 2006-10-12 |
| JP4421710B2 JP4421710B2 (ja) | 2010-02-24 |
Family
ID=22504190
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28327199A Expired - Lifetime JP4421710B2 (ja) | 1998-08-28 | 1999-08-30 | 新規なポリマー及びそれらを含有してなるフォトレジスト組成物 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US6136501A (OSRAM) |
| JP (1) | JP4421710B2 (OSRAM) |
| KR (1) | KR100735889B1 (OSRAM) |
Families Citing this family (62)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6852466B2 (en) * | 1998-12-23 | 2005-02-08 | Shipley Company, L.L.C. | Photoresist compositions particularly suitable for short wavelength imaging |
| US6379861B1 (en) * | 2000-02-22 | 2002-04-30 | Shipley Company, L.L.C. | Polymers and photoresist compositions comprising same |
| KR100660513B1 (ko) * | 2000-04-27 | 2006-12-22 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 고분자 화합물, 화학 증폭 레지스트 재료 및 패턴 형성 방법 |
| US6492090B2 (en) | 2000-04-28 | 2002-12-10 | Shin-Etsu Chemical Co., Ltd. | Polymers, resist compositions and patterning process |
| JP2005508512A (ja) * | 2001-03-22 | 2005-03-31 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | フォトレジスト組成物 |
| JP4554889B2 (ja) * | 2001-03-22 | 2010-09-29 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | フォトレジスト組成物 |
| US6641971B2 (en) * | 2001-06-15 | 2003-11-04 | International Business Machines Corporation | Resist compositions comprising silyl ketals and methods of use thereof |
| US7022455B2 (en) * | 2001-12-28 | 2006-04-04 | Shipley Company, L.L.C. | Photoacid-labile polymers and photoresists comprising same |
| US6767688B2 (en) * | 2001-12-31 | 2004-07-27 | Shipley Company, L.L.C. | Photoresist compositions |
| JP4048824B2 (ja) * | 2002-05-09 | 2008-02-20 | Ｊｓｒ株式会社 | 感放射線性樹脂組成物 |
| WO2004092831A2 (en) * | 2003-04-09 | 2004-10-28 | Rohm And Haas, Electronic Materials, L.L.C. | Photoresists and methods for use thereof |
| US7488565B2 (en) * | 2003-10-01 | 2009-02-10 | Chevron U.S.A. Inc. | Photoresist compositions comprising diamondoid derivatives |
| JP4789599B2 (ja) | 2004-12-06 | 2011-10-12 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | フォトレジスト組成物 |
| EP1691238A3 (en) | 2005-02-05 | 2009-01-21 | Rohm and Haas Electronic Materials, L.L.C. | Coating compositions for use with an overcoated photoresist |
| KR20070021749A (ko) * | 2005-08-19 | 2007-02-23 | 삼성전자주식회사 | 유기 조성물, 이를 포함하는 액정 표시 장치 및 이의 제조방법 |
| EP1762895B1 (en) | 2005-08-29 | 2016-02-24 | Rohm and Haas Electronic Materials, L.L.C. | Antireflective Hard Mask Compositions |
| EP1829942B1 (en) * | 2006-02-28 | 2012-09-26 | Rohm and Haas Electronic Materials, L.L.C. | Coating compositions for use with an overcoated photoresist |
| US7809632B2 (en) * | 2006-04-12 | 2010-10-05 | Uat, Inc. | System and method for assigning responsibility for trade order execution |
| US7476492B2 (en) * | 2006-05-26 | 2009-01-13 | International Business Machines Corporation | Low activation energy photoresist composition and process for its use |
| EP2420891B1 (en) | 2006-10-30 | 2021-06-23 | Rohm and Haas Electronic Materials LLC | Process for immersion lithography |
| TWI374478B (en) | 2007-02-13 | 2012-10-11 | Rohm & Haas Elect Mat | Electronic device manufacture |
| CN101308329B (zh) | 2007-04-06 | 2013-09-04 | 罗门哈斯电子材料有限公司 | 涂料组合物 |
| JP5171422B2 (ja) * | 2008-06-19 | 2013-03-27 | ルネサスエレクトロニクス株式会社 | 感光性組成物、これを用いたパターン形成方法、半導体素子の製造方法 |
| EP2189845B1 (en) | 2008-11-19 | 2017-08-02 | Rohm and Haas Electronic Materials LLC | Compositions and processes for photolithography |
| EP2204392A1 (en) | 2008-12-31 | 2010-07-07 | Rohm and Haas Electronic Materials LLC | Compositions and processes for photolithography |
| EP2204694A1 (en) | 2008-12-31 | 2010-07-07 | Rohm and Haas Electronic Materials LLC | Compositions and processes for photolithography |
| CN101943860B (zh) | 2009-06-08 | 2013-12-11 | 罗门哈斯电子材料有限公司 | 平版印刷方法 |
| IL213195A0 (en) | 2010-05-31 | 2011-07-31 | Rohm & Haas Elect Mat | Photoresist compositions and emthods of forming photolithographic patterns |
| JP2012113302A (ja) | 2010-11-15 | 2012-06-14 | Rohm & Haas Electronic Materials Llc | 塩基反応性成分を含む組成物およびフォトリソグラフィーのための方法 |
| EP2472329B1 (en) | 2010-12-31 | 2013-06-05 | Rohm and Haas Electronic Materials LLC | Coating compositions for use with an overcoated photoresist |
| US9851639B2 (en) | 2012-03-31 | 2017-12-26 | International Business Machines Corporation | Photoacid generating polymers containing a urethane linkage for lithography |
| US9171720B2 (en) | 2013-01-19 | 2015-10-27 | Rohm And Haas Electronic Materials Llc | Hardmask surface treatment |
| US9136123B2 (en) | 2013-01-19 | 2015-09-15 | Rohm And Haas Electronic Materials Llc | Hardmask surface treatment |
| JP6421449B2 (ja) | 2013-05-20 | 2018-11-14 | Jsr株式会社 | 感放射線性樹脂組成物、レジストパターン形成方法、酸発生体及び化合物 |
| KR102248827B1 (ko) | 2013-05-20 | 2021-05-07 | 제이에스알 가부시끼가이샤 | 감방사선성 수지 조성물, 레지스트 패턴 형성 방법, 산 발생체 및 화합물 |
| WO2014188762A1 (ja) | 2013-05-24 | 2014-11-27 | Jsr株式会社 | 感放射線性樹脂組成物、レジストパターン形成方法、酸拡散制御剤、化合物及び化合物の製造方法 |
| JP6572898B2 (ja) | 2014-09-17 | 2019-09-11 | Jsr株式会社 | パターン形成方法 |
| WO2016043200A1 (ja) | 2014-09-17 | 2016-03-24 | Jsr株式会社 | パターン形成方法 |
| JP6646990B2 (ja) * | 2014-10-02 | 2020-02-14 | 東京応化工業株式会社 | レジストパターン形成方法 |
| US9244345B1 (en) | 2014-11-06 | 2016-01-26 | International Business Machines Corporation | Non-ionic photo-acid generating polymers for resist applications |
| KR101785426B1 (ko) | 2015-04-30 | 2017-10-17 | 롬엔드하스전자재료코리아유한회사 | 포토레지스트 조성물 및 방법 |
| WO2017094479A1 (ja) | 2015-12-01 | 2017-06-08 | Jsr株式会社 | 感放射線性組成物、パターン形成方法及び感放射線性酸発生剤 |
| US10113024B2 (en) | 2015-12-21 | 2018-10-30 | Dow Global Technologies Llc | Arylcyclobutenes |
| KR20170098173A (ko) | 2016-02-19 | 2017-08-29 | 제이에스알 가부시끼가이샤 | 감방사선성 조성물 및 패턴 형성 방법 |
| US10120277B2 (en) | 2016-02-19 | 2018-11-06 | Jsr Corporation | Radiation-sensitive composition and pattern-forming method |
| KR102341492B1 (ko) | 2016-03-03 | 2021-12-22 | 제이에스알 가부시끼가이샤 | 감방사선성 수지 조성물, 레지스트 패턴 형성 방법, 감방사선성 산 발생제 및 화합물 |
| JPWO2018043506A1 (ja) | 2016-08-29 | 2019-06-24 | Jsr株式会社 | 感放射線性組成物及びパターン形成方法 |
| US11480878B2 (en) | 2016-08-31 | 2022-10-25 | Rohm And Haas Electronic Materials Korea Ltd. | Monomers, polymers and photoresist compositions |
| KR20190099428A (ko) | 2016-12-28 | 2019-08-27 | 제이에스알 가부시끼가이샤 | 감방사선성 조성물, 패턴 형성 방법 그리고 금속 함유 수지 및 그의 제조 방법 |
| KR20190099429A (ko) | 2016-12-28 | 2019-08-27 | 제이에스알 가부시끼가이샤 | 감방사선성 조성물, 패턴 형성 방법 및 금속 산화물 |
| CN108264605A (zh) | 2016-12-30 | 2018-07-10 | 罗门哈斯电子材料韩国有限公司 | 单体、聚合物和光致抗蚀剂组合物 |
| KR20190103229A (ko) | 2017-01-26 | 2019-09-04 | 제이에스알 가부시끼가이샤 | 감방사선성 조성물 및 패턴 형성 방법 |
| WO2018168221A1 (ja) | 2017-03-13 | 2018-09-20 | Jsr株式会社 | 感放射線性組成物及びパターン形成方法 |
| EP3605228B1 (en) | 2017-03-30 | 2022-02-09 | JSR Corporation | Radiation sensitive composition and resist pattern forming method |
| JP7071660B2 (ja) | 2017-04-11 | 2022-05-19 | Jsr株式会社 | 感放射線性組成物及びレジストパターン形成方法 |
| KR20200039665A (ko) | 2017-08-10 | 2020-04-16 | 제이에스알 가부시끼가이샤 | 감방사선성 조성물 및 레지스트 패턴 형성 방법 |
| JP6730417B2 (ja) | 2017-12-31 | 2020-07-29 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | フォトレジスト組成物および方法 |
| JPWO2022202402A1 (OSRAM) | 2021-03-26 | 2022-09-29 | ||
| JP7717793B2 (ja) | 2021-04-01 | 2025-08-04 | Jsr株式会社 | 半導体基板の製造方法及びレジスト下層膜形成用組成物 |
| US11874603B2 (en) | 2021-09-15 | 2024-01-16 | Rohm And Haas Electronic Materials Korea Ltd. | Photoresist composition comprising amide compound and pattern formation methods using the same |
| WO2023089946A1 (ja) | 2021-11-16 | 2023-05-25 | Jsr株式会社 | 半導体基板の製造方法 |
| WO2024070535A1 (ja) | 2022-09-28 | 2024-04-04 | Jsr株式会社 | レジストパターン形成方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
| EP0440374B1 (en) * | 1990-01-30 | 1997-04-16 | Wako Pure Chemical Industries Ltd | Chemical amplified resist material |
| US5258257A (en) * | 1991-09-23 | 1993-11-02 | Shipley Company Inc. | Radiation sensitive compositions comprising polymer having acid labile groups |
| EP0605089B1 (en) * | 1992-11-03 | 1999-01-07 | International Business Machines Corporation | Photoresist composition |
| JP3287057B2 (ja) * | 1993-03-30 | 2002-05-27 | 日本ゼオン株式会社 | レジスト組成物 |
| EP0663616B1 (en) * | 1993-12-28 | 2002-10-30 | Fujitsu Limited | Radiation sensitive material and method for forming pattern |
| JPH08146610A (ja) * | 1994-11-17 | 1996-06-07 | Nippon Zeon Co Ltd | レジスト組成物及びそれを用いたパターン形成方法 |
| KR100206664B1 (ko) * | 1995-06-28 | 1999-07-01 | 세키사와 다다시 | 화학증폭형 레지스트 조성물 및 레지스트 패턴의 형성방법 |
| US5962184A (en) * | 1996-12-13 | 1999-10-05 | International Business Machines Corporation | Photoresist composition comprising a copolymer of a hydroxystyrene and a (meth)acrylate substituted with an alicyclic ester substituent |
-
1998
- 1998-08-28 US US09/143,462 patent/US6136501A/en not_active Expired - Lifetime
-
1999
- 1999-07-09 KR KR1019990027828A patent/KR100735889B1/ko not_active Expired - Lifetime
- 1999-08-30 JP JP28327199A patent/JP4421710B2/ja not_active Expired - Lifetime
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