JP2000286222A5 - - Google Patents
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- Publication number
- JP2000286222A5 JP2000286222A5 JP2000002644A JP2000002644A JP2000286222A5 JP 2000286222 A5 JP2000286222 A5 JP 2000286222A5 JP 2000002644 A JP2000002644 A JP 2000002644A JP 2000002644 A JP2000002644 A JP 2000002644A JP 2000286222 A5 JP2000286222 A5 JP 2000286222A5
- Authority
- JP
- Japan
- Prior art keywords
- solution
- substance
- chemical
- cleaning
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000243 solution Substances 0.000 description 29
- 238000000034 method Methods 0.000 description 26
- 239000000126 substance Substances 0.000 description 24
- 239000000758 substrate Substances 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 14
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- 239000007800 oxidant agent Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- 229910017855 NH 4 F Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical group Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Applications Claiming Priority (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP99870002 | 1999-01-08 | ||
| EP99870003 | 1999-01-11 | ||
| EP99870057A EP1039518A1 (en) | 1999-03-24 | 1999-03-24 | Chemical solution and method for reducing the metal contamination on the surface of a semiconductor substrate |
| US13130999P | 1999-04-27 | 1999-04-27 | |
| US60/131309 | 1999-04-27 | ||
| US99870057-9 | 1999-04-27 | ||
| US99870003-3 | 1999-04-27 | ||
| US99870002-5 | 1999-04-27 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000286222A JP2000286222A (ja) | 2000-10-13 |
| JP2000286222A5 true JP2000286222A5 (enExample) | 2007-02-15 |
| JP4441033B2 JP4441033B2 (ja) | 2010-03-31 |
Family
ID=27443860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000002644A Expired - Lifetime JP4441033B2 (ja) | 1999-01-08 | 2000-01-11 | 半導体基板の表面における金属汚染を低減する方法及び化学溶液 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6592676B1 (enExample) |
| JP (1) | JP4441033B2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8092707B2 (en) * | 1997-04-30 | 2012-01-10 | 3M Innovative Properties Company | Compositions and methods for modifying a surface suited for semiconductor fabrication |
| US8070884B2 (en) * | 2005-04-01 | 2011-12-06 | Fsi International, Inc. | Methods for rinsing microelectronic substrates utilizing cool rinse fluid within a gas enviroment including a drying enhancement substance |
| US7732225B2 (en) * | 2006-06-29 | 2010-06-08 | Texas Instruments Incorporated | Method for measuring contamination in liquids at PPQ levels |
| CN102632055A (zh) * | 2012-03-31 | 2012-08-15 | 江苏鑫和泰光电科技有限公司 | 一种蓝宝石衬底的清洗方法 |
| CN102962226A (zh) * | 2012-12-06 | 2013-03-13 | 江苏吉星新材料有限公司 | 蓝宝石衬底晶片抛光后的清洗方法 |
| CN105903694A (zh) * | 2016-04-27 | 2016-08-31 | 上海超硅半导体有限公司 | 大尺寸蓝宝石衬底退火前的清洗及背面不良返工方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6160799A (ja) * | 1984-08-31 | 1986-03-28 | 株式会社東芝 | 洗浄液 |
| US5158100A (en) * | 1989-05-06 | 1992-10-27 | Dainippon Screen Mfg. Co., Ltd. | Wafer cleaning method and apparatus therefor |
| CA2059841A1 (en) | 1991-01-24 | 1992-07-25 | Ichiro Hayashida | Surface treating solutions and cleaning method |
| JP3075290B2 (ja) | 1991-02-28 | 2000-08-14 | 三菱瓦斯化学株式会社 | 半導体基板の洗浄液 |
| TW263531B (enExample) | 1992-03-11 | 1995-11-21 | Mitsubishi Gas Chemical Co | |
| JP2857042B2 (ja) * | 1993-10-19 | 1999-02-10 | 新日本製鐵株式会社 | シリコン半導体およびシリコン酸化物の洗浄液 |
| US5656097A (en) * | 1993-10-20 | 1997-08-12 | Verteq, Inc. | Semiconductor wafer cleaning system |
| US5466389A (en) | 1994-04-20 | 1995-11-14 | J. T. Baker Inc. | PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates |
| DE69522617T2 (de) * | 1994-06-28 | 2002-07-04 | Ebara Corp., Tokio/Tokyo | Verfahren und Vorrichtung zum Reinigen von Werkstücken |
| FR2722511B1 (fr) | 1994-07-15 | 1999-04-02 | Ontrak Systems Inc | Procede pour enlever les metaux dans un dispositif de recurage |
| JPH0969509A (ja) * | 1995-09-01 | 1997-03-11 | Matsushita Electron Corp | 半導体ウェーハの洗浄・エッチング・乾燥装置及びその使用方法 |
| TW322605B (enExample) * | 1995-12-07 | 1997-12-11 | Tokyo Electron Co Ltd | |
| KR100207469B1 (ko) * | 1996-03-07 | 1999-07-15 | 윤종용 | 반도체기판의 세정액 및 이를 사용하는 세정방법 |
| DE19611241A1 (de) | 1996-03-21 | 1997-09-25 | Wacker Siltronic Halbleitermat | Verfahren zum Trocknen von Gegenständen |
-
1999
- 1999-12-20 US US09/467,528 patent/US6592676B1/en not_active Expired - Lifetime
-
2000
- 2000-01-11 JP JP2000002644A patent/JP4441033B2/ja not_active Expired - Lifetime
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