JP2000277493A - 半導体基板のプラズマエッチング方法および半導体エッチング基板 - Google Patents
半導体基板のプラズマエッチング方法および半導体エッチング基板Info
- Publication number
- JP2000277493A JP2000277493A JP8408899A JP8408899A JP2000277493A JP 2000277493 A JP2000277493 A JP 2000277493A JP 8408899 A JP8408899 A JP 8408899A JP 8408899 A JP8408899 A JP 8408899A JP 2000277493 A JP2000277493 A JP 2000277493A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- plasma
- plasma etching
- semiconductor substrate
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims abstract description 61
- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 title claims abstract description 34
- 238000001020 plasma etching Methods 0.000 title claims abstract description 27
- 239000007789 gas Substances 0.000 claims abstract description 28
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 25
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 25
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 23
- 239000001257 hydrogen Substances 0.000 claims abstract description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 16
- 239000001301 oxygen Substances 0.000 claims abstract description 12
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 10
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims abstract description 10
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims abstract description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000005977 Ethylene Substances 0.000 claims abstract description 4
- 239000001294 propane Substances 0.000 claims abstract description 4
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 claims abstract description 4
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- -1 acethylene Natural products 0.000 abstract description 5
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 240000002329 Inga feuillei Species 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 101150042515 DA26 gene Proteins 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
Landscapes
- Led Devices (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8408899A JP2000277493A (ja) | 1999-03-26 | 1999-03-26 | 半導体基板のプラズマエッチング方法および半導体エッチング基板 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8408899A JP2000277493A (ja) | 1999-03-26 | 1999-03-26 | 半導体基板のプラズマエッチング方法および半導体エッチング基板 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000277493A true JP2000277493A (ja) | 2000-10-06 |
| JP2000277493A5 JP2000277493A5 (https=) | 2005-09-15 |
Family
ID=13820760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8408899A Pending JP2000277493A (ja) | 1999-03-26 | 1999-03-26 | 半導体基板のプラズマエッチング方法および半導体エッチング基板 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000277493A (https=) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003067293A1 (en) * | 2002-02-06 | 2003-08-14 | Matsushita Electric Industrial Co., Ltd. | Optical waveguide manufacturing method |
| JP2015062210A (ja) * | 2013-09-22 | 2015-04-02 | 国立大学法人名古屋大学 | Ｉｉｉ族窒化物半導体のエッチング方法およびｉｉｉ族窒化物半導体装置の製造方法 |
| KR20210065045A (ko) * | 2019-11-26 | 2021-06-03 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 방법 및 플라즈마 처리 장치 |
-
1999
- 1999-03-26 JP JP8408899A patent/JP2000277493A/ja active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003067293A1 (en) * | 2002-02-06 | 2003-08-14 | Matsushita Electric Industrial Co., Ltd. | Optical waveguide manufacturing method |
| US7095934B2 (en) | 2002-02-06 | 2006-08-22 | Matsushita Electric Industrial Co., Ltd. | Optical waveguide manufacturing method |
| JP2015062210A (ja) * | 2013-09-22 | 2015-04-02 | 国立大学法人名古屋大学 | Ｉｉｉ族窒化物半導体のエッチング方法およびｉｉｉ族窒化物半導体装置の製造方法 |
| KR20210065045A (ko) * | 2019-11-26 | 2021-06-03 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 방법 및 플라즈마 처리 장치 |
| JP2021086873A (ja) * | 2019-11-26 | 2021-06-03 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| CN112951698A (zh) * | 2019-11-26 | 2021-06-11 | 东京毅力科创株式会社 | 等离子体处理方法及等离子体处理装置 |
| JP2023054031A (ja) * | 2019-11-26 | 2023-04-13 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| JP7262375B2 (ja) | 2019-11-26 | 2023-04-21 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| JP7374362B2 (ja) | 2019-11-26 | 2023-11-06 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| US12033832B2 (en) | 2019-11-26 | 2024-07-09 | Tokyo Electron Limited | Plasma processing method and plasma processing apparatus |
| CN112951698B (zh) * | 2019-11-26 | 2025-10-17 | 东京毅力科创株式会社 | 等离子体处理方法及等离子体处理装置 |
| KR102887088B1 (ko) * | 2019-11-26 | 2025-11-17 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 방법 및 플라즈마 처리 장치 |
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