JP2000254900A5 - - Google Patents

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Publication number
JP2000254900A5
JP2000254900A5 JP1999353094A JP35309499A JP2000254900A5 JP 2000254900 A5 JP2000254900 A5 JP 2000254900A5 JP 1999353094 A JP1999353094 A JP 1999353094A JP 35309499 A JP35309499 A JP 35309499A JP 2000254900 A5 JP2000254900 A5 JP 2000254900A5
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JP
Japan
Prior art keywords
aluminum
pore arrangement
arrangement regulating
containing aluminum
main component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999353094A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000254900A (ja
JP4146978B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP35309499A priority Critical patent/JP4146978B2/ja
Priority claimed from JP35309499A external-priority patent/JP4146978B2/ja
Priority to US09/472,125 priority patent/US6464853B1/en
Priority to EP99310595A priority patent/EP1020545A3/en
Publication of JP2000254900A publication Critical patent/JP2000254900A/ja
Priority to US10/222,901 priority patent/US6790787B2/en
Publication of JP2000254900A5 publication Critical patent/JP2000254900A5/ja
Application granted granted Critical
Publication of JP4146978B2 publication Critical patent/JP4146978B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP35309499A 1999-01-06 1999-12-13 細孔を有する構造体の製造方法、該製造方法により製造された構造体 Expired - Fee Related JP4146978B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP35309499A JP4146978B2 (ja) 1999-01-06 1999-12-13 細孔を有する構造体の製造方法、該製造方法により製造された構造体
US09/472,125 US6464853B1 (en) 1999-01-06 1999-12-23 Method of producing structure having narrow pores by anodizing
EP99310595A EP1020545A3 (en) 1999-01-06 1999-12-24 Method of producing structure having narrow pores and structure produced by the same method
US10/222,901 US6790787B2 (en) 1999-01-06 2002-08-19 Structure having narrow pores

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP11-1269 1999-01-06
JP126899 1999-01-06
JP126999 1999-01-06
JP11-1268 1999-01-06
JP35309499A JP4146978B2 (ja) 1999-01-06 1999-12-13 細孔を有する構造体の製造方法、該製造方法により製造された構造体

Publications (3)

Publication Number Publication Date
JP2000254900A JP2000254900A (ja) 2000-09-19
JP2000254900A5 true JP2000254900A5 (cg-RX-API-DMAC7.html) 2004-12-09
JP4146978B2 JP4146978B2 (ja) 2008-09-10

Family

ID=27274847

Family Applications (1)

Application Number Title Priority Date Filing Date
JP35309499A Expired - Fee Related JP4146978B2 (ja) 1999-01-06 1999-12-13 細孔を有する構造体の製造方法、該製造方法により製造された構造体

Country Status (3)

Country Link
US (2) US6464853B1 (cg-RX-API-DMAC7.html)
EP (1) EP1020545A3 (cg-RX-API-DMAC7.html)
JP (1) JP4146978B2 (cg-RX-API-DMAC7.html)

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JP4250287B2 (ja) * 1999-01-07 2009-04-08 キヤノン株式会社 シリカメソ構造体の製造方法
JP3387897B2 (ja) * 1999-08-30 2003-03-17 キヤノン株式会社 構造体の製造方法、並びに該製造方法により製造される構造体及び該構造体を用いた構造体デバイス
JP3762277B2 (ja) 2000-09-29 2006-04-05 キヤノン株式会社 磁気記録媒体及びその製造方法
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JP2002356400A (ja) * 2001-03-22 2002-12-13 Canon Inc 酸化亜鉛の針状構造体の製造方法及びそれを用いた電池、光電変換装置
US6804081B2 (en) 2001-05-11 2004-10-12 Canon Kabushiki Kaisha Structure having pores and its manufacturing method
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US6596187B2 (en) * 2001-08-29 2003-07-22 Motorola, Inc. Method of forming a nano-supported sponge catalyst on a substrate for nanotube growth
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US6982217B2 (en) * 2002-03-27 2006-01-03 Canon Kabushiki Kaisha Nano-structure and method of manufacturing nano-structure
US6878634B2 (en) * 2002-04-10 2005-04-12 Canon Kabushiki Kaisha Structure having recesses and projections, method of manufacturing structure, and functional device
US7507987B2 (en) * 2002-10-11 2009-03-24 Massachusetts Institute Of Technology Method of making packets of nanostructures
US7892489B2 (en) * 2003-05-27 2011-02-22 Optotrace Technologies, Inc. Light scattering device having multi-layer micro structure
US7384792B1 (en) * 2003-05-27 2008-06-10 Opto Trace Technologies, Inc. Method of fabricating nano-structured surface and configuration of surface enhanced light scattering probe
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JP4583307B2 (ja) * 2003-07-28 2010-11-17 富士通株式会社 移動式無線通信装置
JP4583025B2 (ja) 2003-12-18 2010-11-17 Ｊｘ日鉱日石エネルギー株式会社 ナノアレイ電極の製造方法およびそれを用いた光電変換素子
EP1578173A1 (en) * 2004-03-18 2005-09-21 C.R.F. Società Consortile per Azioni Light emitting device comprising porous alumina and manufacturing process thereof
DE102004052445A1 (de) * 2004-11-17 2006-06-01 Westfälische Wilhelms-Universität Münster Nanostrukturträger, Verfahren zu dessen Herstellung sowie dessen Verwendung
JP4878168B2 (ja) * 2006-02-13 2012-02-15 富士通株式会社 ナノホール構造体及びその製造方法、並びに、磁気記録媒体及びその製造方法
US8323580B2 (en) * 2007-05-29 2012-12-04 OptoTrace (SuZhou) Technologies, Inc. Multi-layer micro structure for sensing substance
US8958070B2 (en) 2007-05-29 2015-02-17 OptoTrace (SuZhou) Technologies, Inc. Multi-layer variable micro structure for sensing substance
US7869044B2 (en) * 2008-01-16 2011-01-11 Optotrace Technologies, Inc. Optical sensing system based on a micro-array structure
US9494615B2 (en) * 2008-11-24 2016-11-15 Massachusetts Institute Of Technology Method of making and assembling capsulated nanostructures
EP2504643B1 (en) * 2009-11-10 2018-06-06 Unilever Plc Frost free surfaces and method for manufacturing the same
KR20110064702A (ko) * 2009-12-08 2011-06-15 삼성전자주식회사 요철 구조를 지닌 코어-쉘 나노 와이어 및 이를 이용한 열전 소자
EP2540469A1 (en) * 2010-02-24 2013-01-02 Sharp Kabushiki Kaisha Die, die production method, and production of antireflection film
KR101067091B1 (ko) * 2010-03-31 2011-09-22 삼성전기주식회사 방열기판 및 그 제조방법
CN102560650B (zh) * 2010-12-29 2014-10-22 中国科学院合肥物质科学研究院 多孔氧化铝光子晶体及其制备方法和用途
US9401247B2 (en) * 2011-09-21 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Negative electrode for power storage device and power storage device
JP5868219B2 (ja) * 2012-02-29 2016-02-24 株式会社フジキン 流体制御装置
KR101904243B1 (ko) * 2012-06-22 2018-11-27 애플 인크. 백색으로 보이는 양극산화 필름 및 이를 형성하기 위한 방법
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US9181629B2 (en) 2013-10-30 2015-11-10 Apple Inc. Methods for producing white appearing metal oxide films by positioning reflective particles prior to or during anodizing processes
US9839974B2 (en) 2013-11-13 2017-12-12 Apple Inc. Forming white metal oxide films by oxide structure modification or subsurface cracking
US9812395B2 (en) * 2014-10-07 2017-11-07 Taiwan Semiconductor Manufacturing Company Limited & National Taiwan University Methods of forming an interconnect structure using a self-ending anodic oxidation
EP3431637A1 (en) * 2017-07-18 2019-01-23 IMEC vzw Porous solid materials and methods for fabrication
DE102018102419B4 (de) * 2018-02-02 2021-11-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Passives elektrisches Bauteil mit einer Indikatorschicht und einer Schutzbeschichtung
EP3848988B1 (en) * 2020-01-09 2025-12-31 Murata Manufacturing Co., Ltd. METHOD FOR MANUFACTURING A SEMICONDUCTIVE STRUCTURE EXHIBITING IMPROVED DICE-CUTTING PROPERTIES
CN111333022B (zh) * 2020-03-17 2023-04-07 中北大学 一种高密度微纳线圈柔性异质集成方法

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US5178967A (en) * 1989-02-03 1993-01-12 Alcan International Limited Bilayer oxide film and process for producing same
JPH06296023A (ja) * 1993-02-10 1994-10-21 Semiconductor Energy Lab Co Ltd 薄膜状半導体装置およびその作製方法
JP3030368B2 (ja) * 1993-10-01 2000-04-10 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2873660B2 (ja) * 1994-01-08 1999-03-24 株式会社半導体エネルギー研究所 半導体集積回路の作製方法
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US5741435A (en) * 1995-08-08 1998-04-21 Nano Systems, Inc. Magnetic memory having shape anisotropic magnetic elements
US6139713A (en) * 1996-08-26 2000-10-31 Nippon Telegraph And Telephone Corporation Method of manufacturing porous anodized alumina film
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JP4532634B2 (ja) * 1998-12-25 2010-08-25 キヤノン株式会社 細孔の製造方法
JP4146978B2 (ja) * 1999-01-06 2008-09-10 キヤノン株式会社 細孔を有する構造体の製造方法、該製造方法により製造された構造体

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