JP2000243784A - Semiconductor device and method of manufacturing semiconductor device - Google Patents

Abstract

(57) [Problem] To provide a smaller and thinner semiconductor device. The semiconductor device according to the present invention includes a semiconductor chip mounted on a first base substrate via a metal bump, a surface of the semiconductor chip opposite to a surface on which the metal bump is mounted, and a first chip.
The second base substrate 22 formed on the same surface as the first base substrate 21 separately from the base substrate 21 is connected by the metal foil 4. Thus, the above object can be achieved.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device and a method for manufacturing a semiconductor device. In particular, the present invention relates to a small and thin semiconductor device having higher stability and a method for manufacturing a semiconductor device having high productivity.

[Prior art]

In recent years, new types of semiconductor devices have been developed one after another in order to respond to demands for higher functionality, smaller size, lighter weight, and higher speed of electronic equipment.

FIG. 6 shows a conventional transistor and a manufacturing process thereof. After the diced semiconductor chip 1 is placed on the island 52 in the lead frame 51 as shown in FIG. 6A (see FIGS. 6B and 6C).
The internal leads 57 in the lead frame 51 and the semiconductor chip 1 are wire-bonded with the bonding wires 53 (see FIG. 6D). Next, after the semiconductor chip 1 is sealed with the resin 55 and molded, (FIG.
(See (e)), the resin material that has protruded to the front and back surfaces of the lead frame 51 and has been solidified is removed. Further, after cutting for each individual semiconductor chip 1, lead molding is performed to obtain individual transistors as shown in FIG. 6 (g).

[0004]

However, the conventional transistor shown in FIG. 6 has the following problems. In order to respond to recent demands for miniaturization and thinning of semiconductor devices as described above, in a conventional transistor, a semiconductor wafer has been polished to make a semiconductor chip thinner, so that a package has been made thinner. On the other hand, as shown in FIG. 6D, a conventional transistor is obtained by bonding the internal leads 57 in the lead frame 51 and the semiconductor chip 1 by wire bonding using bonding wires 53. In this case, it is necessary that the portion other than the pad 59 bonded to the bonding wire 53 on the semiconductor chip 1 is insulated from the bonding wire 53. Therefore, it is necessary to set the distance h between the upper surface of the semiconductor chip 1 and the bonding wires 53 at least so that the edge 58 of the semiconductor chip 1 does not contact the bonding wires 53. Therefore, even if the thickness of the package is reduced to some extent by thinning the semiconductor chip 1 by polishing or the like, a portion other than the pad 59 bonded to the bonding wire 53 on the semiconductor chip 1 is in contact with the bonding wire 53. So that the semiconductor chip 1
Since the distance between the upper surface of the substrate and the bonding wire 53 must be longer than a predetermined length, there has been a problem that the size and thickness cannot be sufficiently reduced.

In the above-described conventional transistor manufacturing process, a wire bonding process is used. In this wire bonding step, as shown in FIG. 6 (d), an enormous amount of labor is required for bonding the bonding wires 53 to the pads 59 provided on the semiconductor chip 1 one by one for each semiconductor chip 1, There has been a problem that the production cost is high and the productivity is low. Similarly, demands for smaller and thinner integrated circuits have been increasing. In the manufacturing process of such an integrated circuit, a similar problem occurs because the above-described wire bonding process is used.

The present invention has been made in view of the above-mentioned problems in the prior art. An object of the present invention is to provide a smaller and thinner semiconductor device. Another object of the present invention is to provide a method for manufacturing a semiconductor device having excellent productivity.

[0007]

According to a first aspect of the present invention, which is provided to solve the above-mentioned problems, a mounting surface of a semiconductor chip mounted on a first base substrate via a metal bump is provided. And a second base substrate formed on the same surface as the first base substrate separately from the first base substrate and connected by metal foil. is there.

According to the semiconductor device of the first invention of the present application having the above structure, the semiconductor chip mounted on the first base substrate via the metal bump has a surface opposite to the surface on which the metal bump is mounted, and A second base substrate formed on the same surface as the first base substrate separately from the first base substrate is connected by a metal foil, so that a gap is provided on the upper surface of the semiconductor chip to prevent a short circuit. Since the necessity is eliminated, the thickness of the entire semiconductor device can be reduced. On the other hand, in the conventional semiconductor device, it is necessary to provide a gap on the upper surface of the semiconductor chip so that the semiconductor chip and the bonding wire are not contacted and short-circuited as a result of connecting the semiconductor chip and the internal lead with the bonding wire. It can be said that the semiconductor device according to the present embodiment can improve the space efficiency as compared with the conventional semiconductor device.

Further, the second invention of the present application is to form the first base substrate and the second base substrate separately on the same surface,
After joining a semiconductor chip on the first base substrate via a metal bump, a resin is deposited after connecting the second base substrate and the opposite surface of the semiconductor chip to the metal bump installation surface with a metal foil, A method of manufacturing a semiconductor device, comprising cutting the semiconductor device into predetermined units thereafter.

In a conventional semiconductor device manufacturing process using a wire bonding method, a bonding wire is provided for each semiconductor chip to a pad provided on the semiconductor chip one by one.
In addition to requiring a great deal of labor to include a bonding step, a wire bonder used for the bonding, a die bonder used for positioning and mounting the semiconductor chip 1 on an island on a lead frame, and molding with a resin are performed. A device such as a molding device is required. However,
According to the method of manufacturing a semiconductor device of the second invention of the present application having the above configuration, a first base substrate and a second base substrate are formed separately on the same surface, and a metal bump is formed on the first base substrate via a metal bump. After joining the semiconductor chip, the resin is deposited after connecting the second base substrate and the surface opposite to the metal bump mounting surface of the semiconductor chip with a metal foil, and then the resin is cut into predetermined units. Since a semiconductor device can be manufactured without using the device, investment in the device is not required, and a plurality of semiconductor chips and the corresponding first base substrate are collectively joined. Therefore, productivity can be improved, and processing cost for joining can be reduced, so that manufacturing cost can be reduced. As described above, the productivity of the semiconductor device can be improved.

[0011] The third invention of the present application is directed to a third aspect of the present invention, wherein a plurality of first base substrates and a second base substrate corresponding to the plurality of first base substrates are separately formed on the same surface, and the plurality of first base substrates are formed. The plurality of first substrates are provided on a base substrate via metal bumps.
After bonding the semiconductor chip corresponding to the base substrate, the sheet on which the metal foil corresponding to the semiconductor chip is placed is placed so that the metal foil contacts the set of the semiconductor chip and the second base substrate. A method for manufacturing a semiconductor device, comprising: after joining together, depositing a resin, and thereafter cutting the resin into predetermined units.

The second base substrate corresponding to the plurality of first base substrates referred to in the present application is primarily defined as the second bases provided in the same number as the plurality of first base substrates. Refers to a substrate. In addition, the semiconductor chips corresponding to the plurality of first base substrates referred to in the present application primarily refer to the semiconductor chips provided in the same number as the plurality of first base substrates. The metal foil corresponding to the semiconductor chip refers to the metal foil provided in the same number as the number of the semiconductor chips. Furthermore, "so that the metal foil and the set of the semiconductor chip and the second base substrate are in contact with each other" means, in the first sense, that the one semiconductor chip and the second base substrate Contact with metal foil. According to the method of manufacturing a semiconductor device of the third invention of the present application having the above-described configuration, the sheet on which the metal foil corresponding to the semiconductor chip is placed is placed on the metal foil and a set of the semiconductor chip and the second base substrate. When the plurality of semiconductor chips and the corresponding first base substrate can be collectively joined by installing them together so as to be in contact with the first base substrate, it is possible to reduce the processing cost for the joining. Therefore, productivity can be improved. Further, since the metal foil can be provided only at the minimum necessary positions on the semiconductor chip and the second base substrate, the risk of short-circuiting between the wirings can be reduced.

Further, the fourth invention of the present application is directed to the first invention, wherein a plurality of first base substrates and a second base substrate corresponding to the plurality of first base substrates are separately formed on the same surface, and the plurality of first base substrates are formed. The plurality of first substrates are provided on a base substrate via metal bumps.
After bonding the semiconductor chip corresponding to the base substrate,
A sheet of metal foil is placed on the semiconductor chip and the second base substrate and bonded together, and then, after cutting the metal foil for each semiconductor chip, a resin is deposited, and then, for each predetermined unit, A method for manufacturing a semiconductor device, comprising cutting.

In the present application, the second base substrate corresponding to the plurality of first base substrates is primarily defined as the second base substrate.
This means that the same number of base substrates as the number of the plurality of first base substrates are provided. Further, the semiconductor chip corresponding to the plurality of first base substrates referred to in the present application means that the semiconductor chips are provided in the same number as the plurality of first base substrates. According to the method of manufacturing a semiconductor device of the fourth invention of the present application having the above configuration, one sheet of metal foil is placed on the semiconductor chip and the second base substrate and joined together, and then, By cutting the metal foil at a time, a plurality of semiconductor chips and the corresponding first base substrate can be joined together at a time, so that the processing cost required for joining can be reduced, and productivity can be reduced. Can be improved. Further, the manufacturing cost of the semiconductor device can be reduced by cutting the metal foil for each of the semiconductor chips after bonding one metal foil to a plurality of semiconductor chips and the second base substrate at once. Thus, the productivity of the semiconductor device can be improved.

The method of manufacturing a semiconductor device according to the fifth invention of the present application is the method of manufacturing a semiconductor device according to any one of the second invention to the fourth invention of the present application, wherein a plurality of semiconductor chips are provided. After bonding and expanding a dicing sheet on a dicing sheet, placing a first base substrate and a second base substrate on the semiconductor chip, and bonding the semiconductor chip to the first base substrate via metal bumps It is characterized by.

According to the method of manufacturing a semiconductor device of the fifth aspect of the present invention having the above structure, after the semiconductor chip is attached to the dicing sheet and expanded, the first base substrate and the second base substrate are formed on the semiconductor chip. Since a plurality of semiconductor chips and the corresponding first base substrate can be collectively bonded by mounting the semiconductor chip on the first base substrate via the metal bumps by mounting the semiconductor chip. In addition, the processing cost required for joining can be reduced, and productivity can be improved.

According to a sixth aspect of the present invention, a first base substrate and a second base substrate are formed separately on the same surface,
After bonding the semiconductor chip on the first base substrate,
After connecting the second base substrate and the semiconductor chip with a metal foil and depositing a resin, and then cutting the resin into predetermined units, the height of the semiconductor device obtained is not more than the length of the short side of the bottom surface. There is provided a semiconductor device.

In the present application, the bottom surface is primarily
In a semiconductor device having a rectangular parallelepiped shape, a surface on a side parallel to the semiconductor chip, the first base substrate, and the second base substrate is referred to, and the height is, in the first place, a rectangular parallelepiped shape. Refers to a side that is vertically in contact with the bottom surface in the semiconductor device. According to the semiconductor device of the sixth invention of the present application having the above configuration, the first base substrate and the second base substrate are separately formed on the same surface, and a semiconductor chip is bonded on the first base substrate. Depositing a resin after connecting the second base substrate and the semiconductor chip with a metal foil,
Then, since the height of the semiconductor device obtained by cutting each predetermined unit is equal to or less than the length of the short side of the bottom surface, it is possible to prevent the semiconductor device from falling when mounted on a circuit board or the like. Therefore, stability during mounting can be improved.

The semiconductor device according to the seventh aspect of the present invention includes:
A semiconductor device according to the first invention of the present application or a semiconductor device according to the sixth invention of the present application, wherein a plurality of semiconductor chips are included and configured as one unit.

According to the semiconductor device of the seventh aspect of the present invention having the above structure, since a plurality of semiconductor chips can be mounted at one time by being configured as one unit including a plurality of semiconductor chips, The labor at the time of mounting the device can be reduced. Further, since the number of semiconductor chips included in one unit and the arrangement of the semiconductor chips can be changed as required, a semiconductor device having an optimum shape according to the application can be obtained.

[0021]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a semiconductor device and a method of manufacturing a semiconductor device according to embodiments of the present invention will be described with reference to the drawings. This is only an example of a method of manufacturing the device. FIG.
1A and 1B are a cross-sectional view and a perspective view illustrating a semiconductor device according to the present embodiment. FIG. 2 is a diagram showing one manufacturing process of the semiconductor device according to the present embodiment. FIG. 3 is a cross-sectional view showing one manufacturing step of the semiconductor device according to the present embodiment. FIG.
FIG. 4 is a cross-sectional view showing an example according to the present embodiment.
FIG. 5 is a sectional view showing an example according to the present embodiment.

The semiconductor device according to this embodiment is an integrated circuit that requires an individual semiconductor such as a transistor, a diode, or a thyristor and a back electrode. As shown in FIG. And the first base substrate 2
The surface opposite to the surface on which the metal bumps 3 of the semiconductor chip 1 are mounted on the first base substrate 21 is separated from the first base substrate 21 and formed on the same surface as the first base substrate 21. The two base substrates 22 are connected by the metal foil 4. A bonding material or a metal eutectic 7 is provided between the semiconductor chip 1 and the first base substrate 21. When using a metal eutectic, a joining material is not necessarily required. In addition, as the bonding material, a material having a high insulating property, an anisotropic conductive resin, or the like can be given. The semiconductor chip 1 that has been diffused, is diced and divided into individual pieces, and has metal bumps formed on the surface by electrolytic plating or the like is used. Further, the base substrate 21 and the base substrate 22 are conductive electrodes formed using a metal on the substrate 8 made of an insulating material, and are formed separately on the same surface of the substrate 8 to be insulated from each other. In addition, these base substrates 2
The base 1 and the base substrate 22 are connected to the semiconductor chip 1 on one main surface of the semiconductor chip 1 and on the opposite surface, respectively.
Here, the one main surface refers to a surface on which the metal bumps of the semiconductor chip 1 are provided. The first base substrate 21 is connected to the semiconductor chip 1 via the metal bumps 3, and the second base substrate 22 is connected from the upper surface of the semiconductor chip 1 (the surface opposite to the surface on which the metal bumps 3 are provided) via the metal foil 4. Connected to semiconductor chip 1. That is, a first base substrate 21 for depositing the semiconductor chip 1 via the metal bumps 3, and a base substrate formed separately from the first base substrate 21 and connected to the semiconductor chip 1 via the metal foil 4. 22 are used to form one semiconductor device. Here, being separated from the first base substrate 21 means that the first base substrate 21 and the second base substrate 22 are not in contact with each other. Also,
The substrate 8 is made of glass epoxy resin, polyimide resin, BT
It is made of an insulating material such as a resin, a tape made of a ceramic substrate, or a ceramic. The metal bumps 3 are provided for connecting the semiconductor chip 1 and the first base substrate 21, and are obtained by electrolytic plating or the like using Cu, Al, Au, Ag, Sn, Pb or an alloy of these metals. . The metal foil 4 is made of Al, Cu, Au, or an alloy containing them, and the semiconductor chip 1 and the second base substrate 22
In order to connect the semiconductor chip 1 to the surface opposite to the surface on which the metal bumps 3 are provided on the semiconductor chip 1 and the upper surface of the second base substrate 22. Here, the surface opposite to the mounting surface of the metal bump 3 refers to the surface of the semiconductor chip 1 on the opposite side to the connection surface with the first base substrate 21. As described above, in the semiconductor device according to the present embodiment, since the semiconductor chip 1 and the second base substrate 22 are connected by the metal foil 4, it is necessary to provide a gap on the upper surface of the semiconductor chip 1 to prevent a short circuit. Therefore, the thickness of the entire semiconductor device can be reduced.
On the other hand, in the conventional semiconductor device, as a result of the semiconductor chip and the internal lead being connected by the bonding wire, it is necessary to provide a gap on the upper surface of the semiconductor chip so that the semiconductor chip and the bonding wire do not come into contact and short-circuit. It can be said that the semiconductor device according to the present embodiment can improve the space efficiency as compared with the conventional semiconductor device.

Next, a method of manufacturing the semiconductor device shown in FIG. 1 will be described with reference to FIGS. First, a step of bonding a semiconductor chip 1 used when manufacturing the semiconductor device according to the present embodiment and a base substrate 21 connected to the semiconductor chip 1 via the metal bumps 3 with reference to FIG. explain. First, as shown in FIG. 2A, the semiconductor chips 1 individually cut by dicing
Is adhered to a dicing sheet 10 stretched on a ring 11, and as shown in FIG.
2 by expanding the dicing sheet 10 from the outer periphery and expanding the semiconductor chip 1 as shown in FIG.
As shown in (c), a semiconductor chip 1 with a widened interval between them is obtained. If the expansion is insufficient, as shown in FIG. 2 (d), after the sheet is replaced, the sheet 13 is placed on an expanding device and expanded again (see FIG. 2 (e)), and the semiconductor chip is expanded. 1 is further enlarged (see FIG. 2 (f)). If further expansion is required, the steps of FIGS. 2D and 2E are repeated. Next, following the step shown in FIG. 2 (e), as shown in FIG. 2 (g), the dicing sheet 10 on which the semiconductor chip 1 is stuck is joined to the joining tool 1
6, the ring 14 to which the base substrate 2 is attached is placed on the dicing sheet 10, and the electrode pads 5 on the semiconductor chip 1 and the electrode pads 6 on the first base substrate 21 of the base substrate 2 are placed. Are bonded via the metal bumps 3. For such bonding, a bonding material or a metal eutectic is used. When using a metal eutectic, a joining material is not necessarily required. In addition, as the bonding material, a material having a high insulating property, an anisotropic conductive resin, or the like can be given. Note that the joining method is not limited to the method shown in FIG. 2G as long as the method can join the semiconductor chip 1 and the first base substrate 21. The base substrate 2 used in the present embodiment is
The first base substrate 21 and the second base substrate 22 are separated from each other (see FIG. 2H), and the first base substrate 21 and the second base substrate 22 are alternately provided on the same surface. . In this manner, the semiconductor chip 1 and the first base substrate 21 are joined to obtain the semiconductor device shown in FIG. 2H (enlarged view of the connection between the semiconductor chip 1 and the base substrate 2). Each of the semiconductor chips 1 is a base substrate 21
Installed and connected above. The connection between the semiconductor chip 1 and the first base substrate 21 can be increased by performing the connection between the semiconductor chip 1 and the first base substrate 21 by the process shown in FIG. Can be performed collectively, the productivity of the semiconductor device can be improved, and the processing cost required for the manufacturing can be reduced. Further, instead of the process shown in FIG. 2, the first base substrate 21 and the semiconductor chip 1 may be connected by inner lead bonding.
The bonding between the semiconductor chip 1 and the second base substrate 21 as shown in FIG. 2 (g) may be performed without the step of expanding the semiconductor chip 1 shown in FIGS. 2 (a) to 2 (f).

After the step shown in FIG. 2G, the sheet 17 in which the metal foil 4 is arranged on the surface facing the base substrate 2 so as to be in contact with the semiconductor chip 1 and the second base substrate 22
(See FIG. 3A) The semiconductor chip 1 and the base substrate 2
After being stacked on the top (see FIG. 3B), the metal foil 4 and the semiconductor chip 1 and the second
The base substrate 22 is bonded (see FIG. 3C). The bonding is performed by ultrasonic waves, heat, or a combination thereof. Further, as the metal foil 4, the sheet 1 is separated for each semiconductor chip 1.
7 is used. As a result, the metal foil 4 is placed at the minimum required position, so that the risk of short-circuiting between the wirings during operation of the device can be reduced. Next, after the metal foil 4 is peeled off from the sheet 17 (see FIG. 3D), the resin 19 is applied to the semiconductor chip 1 and the first
It is applied to the entire device including the base substrate 21 and the second base substrate 22 (see FIG. 3E). Finally, a semiconductor device is obtained by cutting the semiconductor chip 1 from the resin 19 at the cut surface A.

In a conventional semiconductor device manufacturing process, FIG.
As shown in (d), a huge amount of labor is required because a method of bonding the bonding wires 53 to the pads 59 provided on the semiconductor chip 1 one by one for each semiconductor chip 1 is required. Devices such as a wire bonder used for bonding, a die bonder used for positioning and mounting the semiconductor chip 1 on the island 52 on the lead frame, and a molding device for performing molding with the resin 55 are required. On the other hand, in the method for manufacturing a semiconductor device according to the present embodiment, since a semiconductor device can be manufactured without using these devices, investment in these devices is not required, and thus manufacturing costs are reduced. be able to.

FIG. 1 is a perspective view of the semiconductor device according to the present embodiment obtained by the steps shown in FIGS.
(B). The semiconductor device according to the present embodiment includes a semiconductor chip 1, a first base substrate 21, and a second base substrate 2.
2, and the metal foil 4 is molded in the resin 19,
1 formed by the process shown in FIG.
As shown in (b), the height Z is smaller than the length of the short side X of the bottom surface. That is, in the present embodiment, the semiconductor device can be made thinner than the conventional semiconductor device by being formed by the process shown in FIG. The shape can be set to be equal to or less than the length of X. Thus, the semiconductor device according to the present embodiment can be prevented from tipping over when it is mounted, so that the stability during mounting can be improved.

In the manufacturing process of the semiconductor device shown in FIG. 3, the metal foil 4 which is formed by separating the metal foil 4 into a predetermined size in advance is placed on the sheet 17 and then the semiconductor chip 1 and the second base substrate 22 are formed. Instead of this method, as shown in FIGS. 4A and 4B, a metal foil 41 having a continuous shape is formed on the semiconductor chip 1 and the base substrate 2 as shown in FIGS. After connecting to the semiconductor chip 1 and the second base substrate 22 (FIG. 4C)
Alternatively, a method of cutting the metal foil 41 at the cut surface A may be used (see FIG. 4D). By using this method, there is no need to position the metal foil 4 and connect it to the semiconductor chip 1 and the second base substrate 22. Can be connected to the semiconductor chip 1 and the second base substrate 22.

On the other hand, in the steps shown in FIGS. 3 and 4, by cutting one semiconductor chip 1 at a time,
Although a semiconductor device including one semiconductor chip 1 is manufactured per semiconductor device, following the process shown in FIG. 3E, as shown in FIG. By cutting from the cut surface B so as to include the semiconductor chip 1, a semiconductor device including a plurality of semiconductor chips and configured as one unit can be obtained.
Thus, when it becomes necessary to mount a plurality of semiconductor devices at the same time, by changing the position of the cut surface B, as shown in FIG. 5B, a plurality of semiconductor chips 1 are provided as one unit. By mounting such a semiconductor device, a plurality of semiconductor chips 1 can be mounted at one time, so that labor for mounting the semiconductor device can be reduced. Although FIG. 5B shows an example of a unit in which the semiconductor chips 1 are arranged in parallel, the arrangement of the semiconductor chips 1 is not limited to the order, and the application is changed by changing the position of the cut plane B. Can be arranged in a shape corresponding to As described above, by changing the number of semiconductor chips 1 included in one unit and the arrangement of the semiconductor chips 1 as required, a predetermined number of semiconductor chips and a predetermined unit shape can be obtained. Thus, a semiconductor device having an optimal shape can be obtained.

[0029]

As described above, according to the semiconductor device of the present invention, the semiconductor chip mounted on the first base substrate via the metal bump has a surface opposite to the surface on which the metal bump is mounted, and The semiconductor chip and the internal leads are connected by a wire bonding method by connecting a second base substrate formed on the same surface as the first base substrate separately from the first base substrate with a metal foil. Unlike a conventional semiconductor device obtained by connection, there is no need to insulate the semiconductor chip and the bonding wires, so there is no need to provide a space on the upper surface of the semiconductor chip. Therefore, a smaller and thinner semiconductor device can be obtained.

According to the method of manufacturing a semiconductor device of the present invention, a first base substrate and a second base substrate are formed separately on the same surface, and a semiconductor is formed on the first base substrate via a metal bump. After bonding the chips, the second base substrate and the surface opposite to the metal bump mounting surface of the semiconductor chip are connected by a metal foil, and then the resin is deposited. Since the semiconductor chip and the first base substrate corresponding to the semiconductor chip can be joined together, the productivity can be improved and the processing cost for joining can be reduced.
Manufacturing costs can be reduced. As described above, the productivity of the semiconductor device can be improved.

According to the method of manufacturing a semiconductor device of the present invention, a plurality of first base substrates and a second base substrate corresponding to the plurality of first base substrates are separately formed on the same surface. After bonding the semiconductor chips corresponding to the plurality of first base substrates via the metal bumps on the plurality of first base substrates, a sheet on which the metal foil corresponding to the semiconductor chip is placed is referred to as the metal foil. A set of the semiconductor chip and the second base substrate are placed so as to be in contact with each other, the resin is deposited after collectively joining the resin, and then the resin is cut into predetermined units. Since the corresponding first base substrate can be collectively joined, the processing cost for the joining can be reduced, and the productivity can be improved.

According to the method of manufacturing a semiconductor device of the present invention, a plurality of first base substrates and a second base substrate corresponding to the plurality of first base substrates are formed separately on the same surface, A semiconductor chip corresponding to the plurality of first base substrates is bonded to the plurality of first base substrates via metal bumps, and then one metal foil is placed on the semiconductor chip and the second base substrate to collectively Then, after cutting the metal foil for each of the semiconductor chips, depositing a resin, and thereafter cutting the resin for each predetermined unit, a plurality of semiconductor chips and the corresponding first base substrate are cut. Can be joined together, so that the processing cost required for joining can be reduced, and the productivity can be improved. Further, the manufacturing cost of the semiconductor device can be reduced by cutting the metal foil for each of the semiconductor chips after bonding one metal foil to a plurality of semiconductor chips and the second base substrate at once. Thus, the productivity of the semiconductor device can be improved.

According to the semiconductor device of the present invention,
A first base substrate and a second base substrate were separately formed on the same surface, and a semiconductor chip was bonded on the first base substrate. Then, the second base substrate and the semiconductor chip were connected with a metal foil. When mounting the semiconductor device on an integrated circuit or the like, since the height of the semiconductor device obtained by depositing the post-resin and then cutting the predetermined unit is shorter than the length of the short side of the bottom surface, Can be prevented, so that the stability during mounting can be improved.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view and a perspective view illustrating a semiconductor device according to an embodiment.

FIG. 2 is a view illustrating one manufacturing process of the semiconductor device according to the present embodiment;

FIG. 3 is a cross-sectional view showing one manufacturing step of the semiconductor device according to the present embodiment;

FIG. 4 is a sectional view showing an example according to the present embodiment.

FIG. 5 is a sectional view showing an example according to the present embodiment.

FIG. 6 is a view showing a conventional semiconductor device and a manufacturing process thereof.

[Explanation of symbols]

 Reference Signs List 1 semiconductor chip 2 base substrate 3 metal bump 4 metal foil 5, 6 electrode pad 7 bonding material or metal eutectic 8 substrate 10 dicing sheet 11, 14 ring 12 expanding device 13 sheet 15 holding stage 16 bonding tool 17 sheet 18 tool 19, 55 Resin 21 First base substrate 22 Second base substrate 41 Metal ribbon 42 Cutter 51 Lead frame 52 Island 53 Bonding wire 54 Ball 56 External lead 57 Internal lead 58 Edge portion 59 Pad A, B Cut surface h Height X height Z The length of the short side of the bottom

Claims (7)

[Claims] 1. A semiconductor chip mounted on a first base substrate via a metal bump, the surface of the semiconductor chip opposite to the mounting surface of the metal bump and the first base substrate being separated from the first base substrate. A semiconductor device, wherein a second base substrate formed on the same surface is connected with a metal foil. 2. A semiconductor device comprising: a first base substrate and a second base substrate formed separately on the same surface; a semiconductor chip bonded to the first base substrate via a metal bump; A method for manufacturing a semiconductor device, comprising: connecting a surface of the semiconductor chip opposite to a surface on which the metal bumps are mounted with a metal foil, depositing a resin, and thereafter cutting the resin into predetermined units. 3. A plurality of first base substrates and a second base substrate corresponding to the plurality of first base substrates are separately formed on the same surface, and are formed on the plurality of first base substrates via metal bumps. After bonding the semiconductor chips corresponding to the plurality of first base substrates, the sheet on which the metal foil corresponding to the semiconductor chip is placed is placed on the metal foil and a set of the semiconductor chip and the second base substrate. A method for manufacturing a semiconductor device, comprising: mounting a resin so as to be in contact with each other, performing collective bonding, depositing a resin, and thereafter cutting the resin in predetermined units. 4. A plurality of first base substrates and a second base substrate corresponding to the plurality of first base substrates are formed separately on the same surface, and are formed on the plurality of first base substrates via metal bumps. Then, after bonding the semiconductor chips corresponding to the plurality of first base substrates, one metal foil is placed on the semiconductor chip and the second base substrate and bonded together,
A method of manufacturing a semiconductor device, comprising cutting the metal foil for each semiconductor chip, depositing a resin, and then cutting the resin in predetermined units. 5. A plurality of semiconductor chips are attached to a dicing sheet and expanded, and then a first base substrate and a second base substrate are mounted on the semiconductor chips, and metal bumps on the first base substrate are formed. 5. The semiconductor chip according to claim 2, wherein the bonding of the semiconductor chips is performed.
13. The method for manufacturing a semiconductor device according to the above item. 6. A first base substrate and a second base substrate are separately formed on the same surface, and a semiconductor chip is bonded on the first base substrate. Then, the second base substrate and the semiconductor chip are separated. A semiconductor device characterized in that a height of a semiconductor device obtained by depositing a resin after connecting with a metal foil and then cutting the resin in predetermined units is equal to or less than a length of a short side of a bottom surface. 7. The semiconductor device according to claim 1, wherein said plurality of semiconductor chips are included in one unit.
3. The semiconductor device according to claim 1.