JP2001135781A - Semiconductor device and manufacturing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve a problem such that a high frequency, multi-pin semiconductor element can not be effectively laminated and mounted and an ultra-thin, miniaturized semiconductor device of high density can not be achieved in conventional QFP, QFN type semiconductor devices. SOLUTION: The device has a structure where a first semiconductor element 12 is mounted by a bump electrode 13 on a support member 11 with an outer terminal 21 with an insulation sheet interposed, a second semiconductor element 15 is laminated and mounted in the backside of the first semiconductor element 12 and is connected to an inner lead 17 by a metallic fine line 18, and one-sided sealing is carried out by sealing resin 19 for exposing the bottom surface of the support member 11 and the bottom surface and the outer side surface of the inner lead 17. AN area-like external terminal is arranged in a package bottom surface by an outer terminal 20, in the bottom surface of the inner lead and the outer terminal 21 of the support member 11. Thereby, an ultra-thin and compact semiconductor device of high density can be realized.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which the outer periphery of a semiconductor element is sealed, and in particular, a single-sided sealing for exposing the lower surface of peripheral external terminals, and a method of manufacturing the same. The present invention relates to a semiconductor device and a manufacturing method which realize high integration by high frequency and lamination.

[0002]

2. Description of the Related Art In recent years, electronic equipment has been increasingly portable, and accordingly, there has been a remarkable movement to demand a package structure that is compatible with higher frequencies and higher integration, as well as demands for thinner and smaller semiconductor packages. Was.

Conventional semiconductor devices tend to focus on thinning and miniaturization, and among them, QFPs (Quad F
A package called “lat Package” has been widely used. Hereinafter, a conventional semiconductor device will be described using the QFP as an example.

[0004] The QFP is a package having a square appearance.
It has a structure in which gull-wing-shaped lead terminals are arranged at a constant pitch on each side surface. FIG. 12 is a sectional view of a conventional QFP.

[0005] As shown in FIG. 12, a QFP is mounted on a die pad 1 of a lead frame by using a conductive adhesive 3 by which a semiconductor element 2 is thermally cured, and is connected to electrodes of the semiconductor element 2 and external terminals of the lead frame. An outer lead 4 and an inner lead 5 connected thereto are electrically connected by a thin metal wire 6. The surrounding area including the die pad 1, the semiconductor element 2, the fine metal wires 6, and the inner leads 5 is fully molded with the sealing resin 7, and the outer leads 4 constituting the external terminals are formed and protrude from the sealing resin 7. It has a configuration.

A method of manufacturing a QFP will be described with reference to FIG. 12. A step of mounting a semiconductor element 2 on a die pad 1 of a lead frame, and a step of mounting an inner lead 5 connected to an outer lead 4 constituting an external terminal. A step of electrically connecting the electrodes of the semiconductor element 1 with the thin metal wires 6, a step of fully molding the die pad 1 and its surrounding area with a sealing resin 7, and a step of gull-wing the outer leads 4 protruding from the sealing resin 7. And separating from the lead frame. In order to reduce the mounting area, the pitch of the external terminals is reduced and the external terminals are thinned.

However, the external terminal pitch is 0.3
If the thickness is less than [mm], there is a problem that the solder paste remains on the mask, and it has been found that mass production is difficult with the current mounting technology. Therefore, the QFN (Quad Flat) has further reduced the mounting area and thickness.
Non-Leaded Package). Hereinafter, the QFN will be described.

[0008] By realizing the single-sided sealing technology, the QFN can be made ultra-thin and small in area. FIG. 13 is a diagram showing a QFN, FIG. 13A is a cross-sectional view, and FIG. 13B is a bottom view of a half region. FIG. 13A shows A-A1 in FIG.
The cross section of the location is shown.

As shown in FIG. 13, QFN is a lead frame PSD (Point Support Diego).
d) The semiconductor element 2 is mounted on the die pad 8 having a structure via the thermosetting conductive adhesive 3. In addition,
The PSD structure is to support the semiconductor element at several points, improve the adhesion between the sealing resin and the semiconductor element, improve the package crack resistance during mounting, and prolong the mounting period from shipment to the set board. It is intended for. The electrodes of the semiconductor element 2 and the inner leads 9 of the lead frame
Are electrically connected to each other by a thin metal wire 6, the die pad 8 and its outer periphery are molded on one side by a sealing resin 7, and the bottom surface and the outer side surface of the inner lead 9 are exposed on the bottom surface of the package to form an external terminal 10. It is what constitutes.

The method of manufacturing the QFN is such that the semiconductor element 2 is formed on the die pad 8 having the PSD structure of the lead frame.
Mounting, electrically connecting the electrode of the semiconductor element 2 to the inner lead 9 with the thin metal wire 6, and sealing the area including the die pad 8, the semiconductor element 2 and the thin metal wire 6 with the sealing resin 7. It comprises a molding step and a step of cutting the inner leads 9 to make a single package.

As described above, the QFN is characterized in that the external terminals 10 protruding from the sealing resin 7 in the QFP are exposed on substantially the same surface as the back surface of the package, and the thickness (package thickness) of the sealing resin 7 is reduced. And the package thickness is 0.8
It is an ultra-thin and miniaturized package of [mm] or less.

[0012]

However, in the conventional QFN type semiconductor device, when a high-frequency semiconductor element is mounted, the electrodes of the semiconductor element and the external terminals are connected by wire bonds (fine metal wires). Is long and 4 [mm], the wiring delay becomes remarkable, the pitch between the external terminals becomes narrow, the effect of the capacitance between the terminals is large, and there is a problem that the characteristics of the high-frequency semiconductor element cannot be sufficiently exhibited. Also, since the external terminals are arranged around, the limit of the number of external terminals is reduced when considering the area reduction,
Since the semiconductor elements are individually mounted, there is a problem of high integration.

An object of the present invention is to solve the above-mentioned conventional problems and to provide a semiconductor device capable of coping with high-frequency semiconductor elements, achieving high integration, and using conventional facilities, and a method of manufacturing the same. With the goal.

[0014]

In order to solve the above-mentioned conventional problems, a semiconductor device according to the present invention has the following configuration. That is, it has a connection electrode corresponding to an electrode pad of a semiconductor element mounted face-down, is connected to the connection electrode by a lead-out wiring, and has an electrode arranged in an area in the plane, and the electrode has an internal shape. A support member that is electrically connected to the bottom surface with a via to form an external terminal,
By the bump electrode provided on the surface of the support member,
A first semiconductor element mounted face-down on the connection electrode via an insulating material, a second semiconductor element stacked and mounted on a back surface of the first semiconductor element, and a front surface of the second semiconductor element A metal thin wire connecting the electrode pad and the inner lead, and a bottom surface of the support member, a sealing resin that exposes the bottom surface and the outer side surface of the inner lead and seals the outer periphery, and A semiconductor device in which an area-shaped external terminal is constituted by a portion exposed from a sealing resin and external terminals arranged on a bottom surface of the support member.

Specifically, the supporting member is a semiconductor device formed of silicon.

Further, the semiconductor device has a thin portion on an upper part in a sectional shape of the support member.

A method of manufacturing a semiconductor device according to the present invention includes a step of forming a protruding electrode on an electrode pad of a first semiconductor element and a connection electrode corresponding to the electrode pad of the semiconductor element mounted face down. A step of preparing a supporting member that is connected to the connection electrode by a lead-out wiring and disposed in the plane of the supporting member, the electrode being electrically connected to the bottom surface to form an external terminal; and After placing the insulating sheet on the upper surface, the first semiconductor element having the protruding electrode formed on the supporting member is mounted face down, and the connection electrode of the supporting member and the protruding electrode of the first semiconductor element are connected. Connecting, applying an adhesive to the back surface of the first semiconductor element, and mounting the second semiconductor element on the first semiconductor element via the adhesive by bonding the second semiconductor element on the bottom side. Process and A frame member having a knurled lead and having an opening region in which the support member can be arranged is prepared, and a support member on which the first semiconductor element and the second semiconductor element are mounted is arranged in the opening region of the frame member. ,
Electrically connecting the electrode pad of the second semiconductor element to the inner lead of the frame member by a thin metal wire, exposing a bottom surface of the support member, a bottom surface and an outer side surface of the inner lead, And a step of sealing the first semiconductor element, the second semiconductor element, the thin metal wire region, and the outer periphery of the inner lead with a sealing resin.

Specifically, after the insulating sheet is placed on the upper surface of the support member, the first semiconductor element having the protruding electrode formed on the support member is mounted face down, and the connection electrode of the support member is mounted. Manufacturing the semiconductor device in which the insulating sheet is penetrated by the projecting electrode, connected to the connecting electrode of the support member, and the insulating sheet is inserted between the projecting electrodes in the step of connecting the projecting electrode to the projecting electrode of the first semiconductor element. Is the way.

A frame member having an inner lead and an opening region in which a support member can be arranged is prepared, and a supporting member in which a first semiconductor element and a second semiconductor element are mounted in the opening region of the frame member. Disposing a member, and electrically connecting the electrode pad of the second semiconductor element and the inner lead of the frame member by a thin metal wire;
When disposing the support member in the opening area of the frame member,
Using a heater plate provided with a vacuum suction hole for adsorbing the support member at a position where the support member is mounted, and a heat-resistant substance having elasticity, the support plate is provided on the heat-resistant substance of the heater plate. This is a method for manufacturing a semiconductor device in which members are arranged in a state of being fixed by suction.

With the above configuration, the semiconductor device of the present invention has not only a heat radiation effect, but also minimizes the distance between the electrode of the semiconductor element and the external terminal, reduces wiring delay, and has a higher frequency and more pins. A package structure in which a semiconductor element can be mounted and the electrode interval of the multi-pin semiconductor element can be expanded to the terminal interval of the mounting board. Further, high integration can be achieved by packaging, and the conventional wire bonding technology can be used for the connection technology between the electrode of the semiconductor element and the external terminal, which is excellent in versatility.

In the mounting means for mounting the semiconductor element on the support member, the bump electrode formed on the semiconductor element reaches the connection electrode of the support member through the sandwiched insulating sheet when the semiconductor element is mounted. In addition, since a method of joining with a load applied to the semiconductor element is used, a process of equalizing the height of each protruding electrode is not required. Also, regardless of the narrow pitch between the protruding electrodes, the insulating sheet enters between the protruding electrodes, so that a current leak between the protruding electrodes can be prevented. Furthermore, in the method of manufacturing a semiconductor device, a high elastic heat-resistant material is used for a heater plate as a manufacturing facility, so that a shock applied to the semiconductor element when a thin metal wire of the semiconductor element is connected is greatly reduced, and a crack due to damage of the semiconductor element is generated. And so on.

[0022]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor device according to the present invention and a method for manufacturing the same will be described below with reference to the drawings.

First, the semiconductor device of this embodiment will be described. FIG. 1 is a diagram showing a semiconductor device of the present embodiment,
FIG. 1A is a cross-sectional view, and FIG. 1B is a bottom view of a substantially 1/2 region. FIG. 1A is a cross-sectional view of FIG.
The cross section at B1 is shown.

As shown in FIG. 1, in the semiconductor device of the present embodiment, a first semiconductor element 12 is provided on a support member 11 having electrodes and wirings by a bump electrode 13 and a face through an insulating resin or an insulating sheet 14. The second semiconductor element 15 is mounted on the back surface of the first semiconductor element 12.
Are mounted with an adhesive 16 and have a chip-on-chip laminated structure. Then, the electrode on the surface of the second semiconductor element 15 and the inner lead 17 are electrically connected by the thin metal wire 18, and the bottom surface of the support member 11,
It has a structure in which the bottom surface and the outer side surface of the inner lead 17 are exposed and sealed on one side by a sealing resin 19. Then, as shown in the bottom view, the portion of the inner lead 17 exposed from the sealing resin 19 on the substantially same surface is the external terminal 20 outside.
In addition, the support member 11 has an inner external terminal 21 on the bottom surface, the external terminals 21 are arranged in a two-row grid shape, and the external terminals 20 and the external terminals 21 are arranged in an area on the package bottom surface. The external terminals are arranged.

Further, in the semiconductor device of this embodiment,
The support member 11 is a member having a die pad function having an electrode and a wiring, and the electrode connected to the electrode of the semiconductor element on the upper surface is routed by the wiring, and arranged in a grid.
These are arranged as external terminals on the bottom surface. FIG. 2 shows a support member used in the present embodiment. FIG. 2A is a plan view, and FIG. 2B is a bottom view.

As shown in FIG. 2, the support member 1 of the present embodiment
1 has a connection electrode 22 corresponding to an electrode pad of a semiconductor element mounted face-down on the surface thereof, and has an electrode 24 connected to the electrode 22 by a lead-out wiring 23 and arranged in an area. It is. The electrode 24 on the front surface is electrically connected to the bottom surface by a via inside the support member to form the external terminal 21. The support member 11
Have dummy terminals 25 that have no electrical connection for reliability of board mounting.

As the material of the support member 11, for example, silicon or resin is used. Further, when silicon is used as the material of the support member 11, it becomes possible to form a large number of support members having a constant thickness at the same time and with high precision by using a back grinder facility by forming a wafer shape. Further, in the case of the support member 11 made of silicon, since the conventional diffusion equipment can be used for forming the external terminals 21 and the routing wiring 23, it is possible to greatly contribute to miniaturization of wiring and effective utilization of the equipment. The support member 11 can mount a high-frequency characteristic, multi-pin semiconductor element, and has a function of sufficiently transmitting the characteristic of the semiconductor element. The dummy terminal 25 has no electrical connection function, and has an object of improving stability after mounting. However, the number of external terminals 21 exceeds the number of terminals actually required in terms of standardization of the support member.
Can be added to expand the range of adoption. At this time, the surplus external terminal 21 performs the function of the dummy terminal 25.

As the support member 11, a die pad of a normal lead frame may be used in which electrodes and lead-out wiring are formed on the surface, and external terminals connected to the electrodes on the surface are formed on the bottom surface.

As described above, the semiconductor device of this embodiment has the connection electrode 22 corresponding to the electrode pad of the semiconductor element mounted face-down, and is connected to the connection electrode 22 by the lead-out wiring 23 and arranged in an area. A support member 11 having an electrode 24, the electrode 24 being electrically connected to the bottom surface by an internal via to form an external terminal 21;
1, a first semiconductor element 12 is mounted face down on a connection electrode 22 via an insulating material by a bump electrode 13 provided on the surface thereof, and a second semiconductor element 15 is mounted on the back surface of the first semiconductor element 12. Are stacked and mounted by the adhesive 16,
Electrode on inner surface of second semiconductor element 15 and inner lead 1
7 is electrically connected by a thin metal wire 18, and has a structure in which the bottom surface of the support member 11, the bottom surface and the outer side surface of the inner lead 17 are exposed, and one side is sealed by a sealing resin 19. The portion of the lead 17 exposed to the substantially same surface from the sealing resin 19 constitutes the external terminal 20, and the bottom surface of the support member 11 has the external terminal 21, and the external terminals 21 are arranged in an area in a two-row grid. Is what is being done.
Further, since the support member 11 is exposed, the heat generated from the mounted semiconductor element can be efficiently radiated.

In this embodiment, since the connection between the electrode of the semiconductor element and the external terminal is made by the metal terminal, the performance of the semiconductor element having high-frequency characteristics can be sufficiently exhibited. Since they are arranged in a lattice, a multi-pin semiconductor element can be mounted, and at the same time, terminal capacitance between external terminals can be reduced.

Next, a method of manufacturing the semiconductor device according to the present embodiment will be described with reference to the drawings. 3 to 10 are views showing the method for manufacturing the semiconductor device of the present embodiment.

First, as shown in FIG. 3, a bump electrode 13 is formed on the electrode pad of the first semiconductor element 12 as a bump electrode. This bump formation method includes electrolytic plating,
A stud bump bonding method is used. In addition, by forming the tip of the bump electrode 13 at an acute angle, it becomes easy to penetrate the insulating sheet of the support member in a later step. Gold (Au) is used as the material of the bump electrode 13.

Next, as shown in FIG. 4, the semiconductor device has connection electrodes corresponding to the electrode pads of the semiconductor element mounted face-down, and is connected to the connection electrodes by leading wiring.
An electrode is provided in an area within the plane, and the electrode is electrically connected to the bottom surface by an internal via to prepare a support member 11 constituting an external terminal, and an insulating sheet 14 is provided on the upper surface of the support member 11. After mounting, the first semiconductor element 12 having the bump electrode 13 formed on the electrode is mounted face down, and the connection electrode of the support member 11 and the bump electrode 13 of the first semiconductor element 12 are connected. At this time, the bump electrode 13
Thereby, it penetrates the insulating sheet 14 and is connected to the connection electrode of the support member 11.

Next, as shown in FIG. 5, an adhesive 16 is applied to the surface (back surface) opposite to the circuit surface of the first semiconductor element 12 mounted in the previous step. The adhesive 16 has a thermosetting property, for example, and is either conductive or non-conductive depending on the semiconductor element to be mounted.

Next, as shown in FIG. 6, the applied adhesive 1
6, the second semiconductor element 15 is mounted on the first semiconductor element 12 on the bottom surface side. That is, the second semiconductor element 15 is mounted with the electrode pad surface facing upward. In addition, the installation of the second semiconductor element 15 employs conventional equipment and construction methods, and is effective in suppressing an increase in cost.

Next, as shown in FIG. 7, the electrode pads of the second semiconductor element 15 and the inner leads 17 of the frame member are formed.
Are electrically connected by a thin metal wire 18. In this step, a frame member 26 having an inner lead 17 as shown in FIG. 8 and having an opening region in which a support member can be arranged is used. FIG. 8 is a plan view of a substantially half area of the frame member 26. Then, a support member on which the semiconductor element is mounted is installed in the opening region of the frame member 26, and is connected by a thin metal wire such as a gold (Au) wire. That is, a frame member 26 having an inner lead 17 and an opening region in which the support member 11 can be arranged is prepared.
The support member 11 on which the first semiconductor element and the second semiconductor element are mounted is arranged in the opening area of the semiconductor device 6, and the electrode pads of the second semiconductor element and the inner leads 17 of the frame member 26 are electrically connected by the thin metal wires 18. It is a thing to connect.

Technically, a conventional wire bonding technique can be used. In addition, as a facility, a function of picking up a supporting member on which a semiconductor element is mounted and accurately transporting the supporting member to a wire bond area is added to the wire bond facility. Further, when mounting the support member on which the semiconductor element is mounted on the heater plate 27, in order to prevent large damage, the elasticity of absorbing the impact of heat-resistant rubber or the like at the mounting position of the support member as shown in FIG. A heat resistant material 28 having excellent heat resistance is embedded. In FIG. 9, reference numeral 29 denotes a vacuum suction hole for sucking the support member in vacuum. FIG. 9
Is a diagram showing a heater plate used for thin metal wire connection between the frame member and the support member on which the semiconductor element is mounted,
9A is a plan view, and FIG. 9B is a cross-sectional view taken along a line CC of FIG. 9A.

In the step of positioning and arranging the support member 11 on which a plurality of semiconductor elements are mounted and the frame member 26 according to the present embodiment and connecting them with the thin metal wire, the support member 1
When arranging 1 in the opening region of the frame member 26, a vacuum suction hole 29 for sucking the bottom surface of the support member 11 and a heat-resistant substance 28 having elasticity were provided at a place where the support member 11 was placed. The heater plate 27 is used, and the support member 11 is arranged and connected to the heat-resistant substance 28 of the heater plate 27 in a state where the support member 11 is fixed by suction. This can reduce damage applied to the semiconductor element on the support member 11 when connecting with a thin metal wire.

Next, as shown in FIG.
The first semiconductor element 12, the second semiconductor element 15, the region of the thin metal wire 18, and the outer periphery of the inner lead 17 are sealed with a sealing resin 19. In this case, the bottom surface of the support member 11,
One-sided sealing is performed so that the bottom surface and the outer side surface of the inner lead 17 are exposed. Generally, the sealing process is performed by transfer molding. In the present embodiment, the sealing process is selected in consideration of the manufacturing cost, the yield, and the like.

According to the above steps, the connection electrodes corresponding to the electrode pads of the semiconductor element mounted face down are connected, and the connection electrodes are connected to the connection electrodes by the lead-out wiring, and the electrodes arranged in the area within the plane are connected. The electrode is connected to a connection electrode via an insulating sheet 14 by a supporting member that is electrically connected to the bottom surface by an internal via to form an external terminal, and a bump electrode 13 provided on the surface of the supporting member 11. First semiconductor element 12 mounted face down
And a second stacked and mounted on the back surface of the first semiconductor element 12.
And a metal thin wire 1 in which an electrode pad on the surface of the second semiconductor element 15 and the inner lead 17 are connected.
8 and a sealing resin 19 in which the bottom surface of the support member 11, the bottom surface and the outer side surface of the inner lead 17 are exposed, and the outer periphery is sealed, and the portion of the inner lead 17 exposed from the sealing resin 19 is supported. An external terminal arranged on the bottom surface of the member 11 and an external terminal in an area form are obtained.

Next, another embodiment of the semiconductor device of the present invention will be described with reference to the drawings. FIG. 11 is a sectional view showing the semiconductor device of the present embodiment.

As shown in FIG. 11, the semiconductor device of this embodiment has the same basic structure as the semiconductor device of the type shown in FIG. 1, but has a different cross-sectional shape of the supporting member.

The semiconductor device of this embodiment has a connection electrode corresponding to the electrode pad of the semiconductor element mounted face down, and is connected to the connection electrode by a lead-out wiring and arranged in an area within the plane. The electrodes are electrically connected to the bottom surface by internal vias to form external terminals, and are connected via the insulating sheet 14 by the bump electrodes 13 provided on the surface of the support member 30 on the support member 30. A first semiconductor element 12 mounted face-down on the electrode, a second semiconductor element 15 stacked and mounted on the back surface of the first semiconductor element 12, an electrode pad on the surface of the second semiconductor element 15 and an inner The sealing resin 1 in which the thin metal wire 18 connected to the lead 17, the bottom surface of the support member 30, the bottom surface and the outer side surface of the inner lead 17 are exposed, and the outer periphery is sealed.
9 is a semiconductor device in which the external terminals 20 exposed from the sealing resin 19 of the inner leads 17 and the external terminals arranged on the bottom surface of the support member 30 constitute an area-shaped external terminal. The support member 30 has a thin portion 31 at the top in the cross-sectional shape, and has a structure for improving the adhesion of the sealing resin 19.

As described above, the semiconductor device of this embodiment is
A high frequency semiconductor device and a semiconductor device having many pins are realized while securing a small mounting area by attaching an external terminal, a lead-out wiring, and a connection electrode connected to an electrode pad of the semiconductor device to a support member having a die pad function. it can. Furthermore, since semiconductor elements can be stacked, high integration in mounting is enabled.

In the method of manufacturing a semiconductor device according to the present embodiment, when the semiconductor element is mounted on the support member, the bump electrode, which is a protruding electrode formed on the semiconductor element, penetrates the insulating sheet and is connected. Penetrates between the bump electrodes without any gap, thereby greatly suppressing current leakage and terminal capacitance. Further, the conventional die bonding technology and wire bonding technology can be used, and this is a manufacturing method excellent in versatility.

[0046]

According to the semiconductor device of the present invention, the support member on which the first semiconductor element is mounted is provided with a circuit wiring structure, and external terminals can be arranged in an area on the bottom surface of the support member. It can respond to miniaturization. Also the first
Is connected to the electrode of the support member through the insulating sheet, can greatly reduce current leakage and terminal capacity, can be connected to external terminals in the shortest distance, and can achieve high speed It is. Further, a second semiconductor element is stacked and mounted on the first semiconductor element to constitute a three-dimensional module, and high-density mounting can be realized. The external terminals of the second semiconductor element are arranged outside the package bottom surface, and the external terminals of the first semiconductor element are arranged and arranged inside the area inside the package. The multi-pin, narrow pitch can be accommodated. Things.

In the method of manufacturing a semiconductor device, when the semiconductor element is mounted on the support member, the bump electrode, which is a protruding electrode formed on the semiconductor element, penetrates and connects the insulating sheet. Current leak and terminal capacitance can be largely suppressed. Further, the conventional die bonding technology and wire bonding technology can be used, and a manufacturing method excellent in versatility can be provided.

[Brief description of the drawings]

FIG. 1 is a diagram showing a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a view showing a support member of the semiconductor device according to the embodiment of the present invention;

FIG. 3 is a sectional view showing the method of manufacturing the semiconductor device according to the embodiment of the present invention;

FIG. 4 is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 5 is a sectional view showing the method of manufacturing the semiconductor device according to the embodiment of the present invention;

FIG. 6 is a sectional view showing the method of manufacturing the semiconductor device according to the embodiment of the present invention;

FIG. 7 is a sectional view showing the method of manufacturing the semiconductor device according to the embodiment of the present invention;

FIG. 8 is a plan view showing a frame member in a method of manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 9 is a diagram showing a heater plate in the method for manufacturing a semiconductor device according to one embodiment of the present invention.

FIG. 10 is a sectional view showing the method of manufacturing the semiconductor device according to the embodiment of the present invention;

FIG. 11 is a sectional view showing a semiconductor device according to an embodiment of the present invention.

FIG. 12 illustrates a conventional semiconductor device.

FIG. 13 illustrates a conventional semiconductor device.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 die pad 2 semiconductor element 3 conductive adhesive 4 outer lead 5 inner lead 6 thin metal wire 7 sealing resin 8 die pad 9 inner lead 10 external terminal 11 support member 12 first semiconductor element 13 bump electrode 14 insulating sheet 15 second Semiconductor element 16 Adhesive 17 Inner lead 18 Fine metal wire 19 Sealing resin 20 Outer external terminal 21 Inner external terminal 22 Connection electrode 23 Leading wiring 24 Electrode 25 Dummy terminal 26 Frame member 27 Heater plate 28 Heat resistant material 29 Vacuum suction empty Hole 30 Support member 31 Thin part

Claims (6)

[Claims] The semiconductor device includes a connection electrode corresponding to an electrode pad of a semiconductor element mounted face-down, an electrode connected to the connection electrode by a lead wiring, and arranged in an area in a plane of the connection electrode. The electrode was mounted face-down on the connection electrode via an insulating material by a support member which is electrically connected to the bottom surface by an internal via to form an external terminal, and a bump electrode provided on the surface of the support member. A first semiconductor element, a second semiconductor element stacked and mounted on the back surface of the first semiconductor element, a thin metal wire connecting an electrode pad on the surface of the second semiconductor element and an inner lead, The bottom surface of the support member, the bottom surface and the outer side surface of the inner lead are made of a sealing resin that is sealed by exposing the outer periphery, and the portion of the inner lead exposed from the sealing resin and the supporting member A semiconductor device comprising an area-shaped external terminal and external terminals arranged on a bottom surface. 2. The semiconductor device according to claim 1, wherein the support member is formed of silicon. 3. The semiconductor device according to claim 1, wherein the supporting member has a thin portion at an upper part in a cross-sectional shape thereof. 4. A step of forming a protruding electrode on an electrode pad of a first semiconductor element, and having a connection electrode corresponding to an electrode pad of a semiconductor element mounted face down, wherein the connection electrode and the lead-out wiring are provided. A step of preparing a support member connected to and having an electrode disposed in the plane thereof, the electrode being electrically connected to the bottom surface and forming an external terminal; and placing an insulating sheet on the upper surface of the support member. Mounting the first semiconductor element having the protruding electrode formed on the support member face-down, connecting the connection electrode of the support member to the protruding electrode of the first semiconductor element; Applying an adhesive to the back surface of the semiconductor element, mounting a second semiconductor element on the first semiconductor element via the adhesive on the bottom side thereof, and an inner lead. , The support member A frame member having an opening region in which the first semiconductor element and the second semiconductor element are mounted is arranged in the opening region of the frame member; Electrically connecting the electrode pad and the inner lead of the frame member by a thin metal wire, exposing a bottom surface of the support member, a bottom surface and an outer side surface of the inner lead, and connecting the support member, the first semiconductor element, A step of sealing the outer periphery of the second semiconductor element, the thin metal wire region, and the inner lead with a sealing resin. 5. After placing an insulating sheet on the upper surface of the supporting member, a first semiconductor element having a protruding electrode formed on the supporting member is mounted face-down, and a connecting electrode of the supporting member and the first semiconductor element are mounted. In the step of connecting the protruding electrode of the semiconductor element, the insulating sheet is penetrated by the protruding electrode, connected to the connection electrode of the support member, and the insulating sheet is inserted between the protruding electrodes. 5. The method for manufacturing a semiconductor device according to item 4. 6. A frame member having an inner lead and having an opening region in which a support member can be disposed, and a supporting member in which a first semiconductor element and a second semiconductor element are mounted in the opening region of the frame member. In the step of disposing a member and electrically connecting the electrode pad of the second semiconductor element and the inner lead of the frame member by a thin metal wire, when disposing the support member in an opening region of the frame member, A vacuum suction hole for adsorbing the support member at a position where the member is mounted, and a heater plate provided with a heat-resistant substance having elasticity, the support member is provided on the heat-resistant substance of the heater plate. The method for manufacturing a semiconductor device according to claim 4, wherein the semiconductor device is arranged in a state of being fixed by suction.