JP2006059146A - Semiconductor component and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor component and its manufacturing method, by which individual semiconductor chips can be rearranged on prescribed positions of a desired base material without extracting each semiconductor chip from a substrate or the like. <P>SOLUTION: The semiconductor component 10 is provided with the base material 11, antennas 12, 12... arranged on one face 11a of the base material 11 at an equal interval and semiconductor chips 13, 13... electrically connected to respective antennas 12, 12.... <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor component and a manufacturing method thereof.

  In general, a minute part such as a semiconductor chip is very difficult to handle because its size is as small as several tens to several hundreds of micrometers. In recent years, semiconductor chips and the like tend to be further miniaturized, and it has been difficult to directly hold the semiconductor chips individually and align and arrange them on the substrate. So far, for example, Patent Document 1 has proposed a method of arranging minute semiconductor chips in a predetermined direction on a substrate without directly holding them individually.

  Further, Patent Document 2 proposes a supply device that supplies minute parts such as semiconductor chips to a predetermined position such as a substrate by aligning them in a predetermined direction.

  However, Patent Literature 1 and Patent Literature 2 do not disclose a method of rearranging individual semiconductor chips so as to be in a predetermined position with respect to a desired base material.

In order to rearrange individual semiconductor chips on a desired base material, the operation of taking out the semiconductor chip from the substrate and arranging and arranging it again on the base material has to rely on human hands or robot arms. When the semiconductor chip is manually rearranged, the semiconductor chip may fall off and be damaged, so that the semiconductor chip must be handled with great care. In addition, when the robot arm is used, the arrangement speed becomes slow. As described above, when a conventional semiconductor chip is rearranged manually or by a robot arm, the productivity is lowered.
JP 2004-22846 A Japanese Patent Laid-Open No. 11-186790

  The present invention has been made in view of the above circumstances, and enables semiconductor components to be rearranged so that individual semiconductor chips are located at predetermined positions with respect to a desired base material without being taken out from a substrate or the like. And it aims at providing the manufacturing method.

  In order to solve the above problems, the present invention provides a base material, a plurality of antennas arranged in alignment on the base material, and a plurality of semiconductor chips electrically connected to each of the plurality of antennas. And providing a semiconductor component.

  According to such a configuration, the semiconductor component of the present invention can be cut by dicing to make a minute semiconductor component in which at least a part of the RFID device is in contact with the base material.

  The present invention includes a step A for adhering a semiconductor wafer on a thermoplastic resin film, a step B for dicing only the semiconductor wafer adhered on the thermoplastic resin film, and stretching the thermoplastic resin film, The semiconductor wafer diced in step B is separated into a plurality of semiconductor chips, and the plurality of semiconductor chips are arranged and arranged on the stretched thermoplastic resin film, and the stretched thermoplastic in the step C A resin film is superimposed on a base material in which a plurality of antennas are aligned and arranged in the same manner as the plurality of semiconductor chips, and each of the plurality of semiconductor chips arranged in alignment on the stretched thermoplastic resin film. Are electrically connected to each of the plurality of antennas, and a thermoplastic resin film superimposed on the base material is converted into the semiconductor. To provide a method of manufacturing a semiconductor component and a step E of peeling the chip.

  According to such a configuration, by controlling the material of the thermoplastic resin film, the stretching direction, the stretching ratio, and the like, a plurality of semiconductor chips that have been cut by dicing the semiconductor wafer are individually separated, and a predetermined precision is obtained. It can arrange | position on the stretched thermoplastic resin film at intervals. Therefore, it is possible to easily manufacture a semiconductor component in which a plurality of RFID devices are arranged on a base material at predetermined intervals.

  The semiconductor component of the present invention can be divided into small semiconductor components in which at least a part of the RFID device is in contact with the base material by cutting by dicing. Since the obtained minute semiconductor components can be easily handled individually, it is also easy to rearrange the minute semiconductor components on another substrate or the like.

  According to the semiconductor component manufacturing method of the present invention, by controlling the material of the thermoplastic resin film, the stretching direction, the stretching ratio, etc., the semiconductor wafer is diced and separated into a plurality of semiconductor chips. The film can be placed on the stretched thermoplastic resin film at a predetermined interval with high accuracy. Therefore, it is possible to easily manufacture a semiconductor component in which a plurality of RFID devices are arranged on a base material at predetermined intervals. In addition, since a plurality of minute semiconductor components having the same size can be manufactured simply by dicing the semiconductor component into a predetermined size, the manufacturing efficiency can be improved.

  Hereinafter, a semiconductor component embodying the present invention and a manufacturing method thereof will be described with reference to the drawings.

FIG. 1 is a schematic perspective view showing an embodiment of a semiconductor component of the present invention, and (b) is an enlarged view of a portion A surrounded by a broken line in (a).
In FIG. 1, reference numeral 10 denotes a semiconductor component, 11 denotes a base material, 12 denotes an antenna, 13 denotes a semiconductor chip, and 14 denotes a semiconductor device having an RFID function.

  The semiconductor component 10 of this embodiment is electrically connected to the base 11, a plurality of coiled antennas 12 arranged at equal intervals on one surface 11 a of the base 11, and each of the plurality of antennas 12. The plurality of semiconductor chips 13 are roughly configured.

  In the semiconductor component 10, a pair of antennas 12 and a semiconductor chip 13 are electrically connected to each other at a contact (not shown) via a conductive paste or solder to provide RFID (Radio Frequency IDentification). ) A semiconductor device 14 (hereinafter abbreviated as “RFID device”) 14 having a function. The RFID devices 14 are arranged on the one surface 11a of the base material 11 at equal intervals.

  As the base material 11, at least a region where the antenna 12 and the semiconductor chip 13 are provided is made of an electrically insulating material, and is not liquefied in the storage temperature atmosphere (0 ° C. to 60 ° C.) of the semiconductor component 10. A flat plate, film, sheet or the like having a circular shape, a rectangular shape, a square shape or the like in a plan view made of a material that liquefies below the temperature at which 13 is destroyed (within the heat resistance of the semiconductor chip 13) can be given. Furthermore, the thickness and width of the base material 11 are appropriately set according to the use of a minute semiconductor component obtained when the semiconductor component 10 is cut by dicing so as to have only one RFID device 14.

  Examples of the material forming the substrate 11 include, for example, inorganic fibers such as glass fibers and alumina fibers, or woven fabrics made of organic fibers such as polyester fibers and polyamide fibers, nonwoven fabrics, mats, papers, or combinations thereof. Composite materials, impregnated with resin varnish, polyamide resin, polyester resin, polyolefin resin, polyimide resin, ethylene-vinyl alcohol copolymer resin, polyvinyl alcohol resin, polyvinyl chloride resin, poly Thermoplastic resins such as vinylidene chloride resins, polystyrene resins, polycarbonate resins, acrylonitrile-butadiene styrene copolymer resins, polyethersulfone resins, or the like, mat treatment, corona discharge treatment, plasma treatment, ultraviolet irradiation treatment Electron beam irradiation treatment, flame plasma treatment and ozone treatment, or selected and used from known, such as those subjected to a surface treatment of various adhesion facilitating treatment as.

The antenna 12 is a conductor made of a conductive film made of a conductive paste, a conductive foil, or the like.
Examples of the conductive paste forming the conductor forming the antenna 12 include conductive particles such as silver powder, gold powder, platinum powder, aluminum powder, palladium, rhodium, and the like, and carbon powder (carbon black, carbon nanotube, etc.). What mix | blended this with the resin composition is mentioned. Examples of the resin composition forming the conductive paste include a thermosetting resin composition, a photocurable resin composition, an osmotic drying resin composition, and a solvent volatile resin composition.

  Specifically, the conductive paste in which the conductive fine particles as described above are blended with the resin composition contains 60% by mass or more of the conductive fine particles, and includes only the thermoplastic resin or the thermoplastic resin and the crosslinkable resin (particularly, Blended resin composition of polyester and isocyanate-based crosslinked resin, etc., containing polyester resin at 10% by mass or more, that is, solvent volatile type or cross-linked / thermoplastic combined type (however, thermoplastic resin at 50% by mass or more) Containing) or conductive fine particles in an amount of 50% by mass or more, and only a crosslinkable resin (such as a phenol-cured epoxy resin or a sulfonium salt-cured epoxy resin), or a thermoplastic resin and a crosslinkable resin. A blended resin composition, ie, a cross-linked type or a cross-linked / thermoplastic type is preferably used. That.

  Examples of the conductive foil that forms the conductor forming the antenna 12 include copper foil, silver foil, gold foil, and platinum foil.

  The semiconductor chip 13 is not particularly limited, and information can be written and read out in a non-contact state via the antenna 12, and a non-contact type IC tag, a non-contact type IC label, or a non-contact type IC card. Anything can be used as long as it is applicable to the RDIF media.

  Moreover, as the conductive paste used for electrically connecting the antenna 12 and the semiconductor chip 13, the same conductive paste as the conductor forming the antenna 12 may be used.

  Furthermore, the solder used for electrically connecting the antenna 12 and the semiconductor chip 13 is not particularly limited, but in order to prevent the semiconductor chip 13 from being destroyed by the heat of the solder when both are connected, Low melting point solder is desirable. In addition, in order to electrically connect the antenna 12 and the semiconductor chip 13, an ACF (Anisotropic Conductive Film) method, an ACP (Anisotropic Conductive Paste) method, an NCF (Non Conductive Paste) method, and NCF (Non Conductive Paste) method are used. A Resin Film (non-conductive particle film) method, an NCP (Non Conductive Resin Paste) method, or the like can be used.

  In this embodiment, the semiconductor component 10 in which the plurality of antennas 12 are arranged at equal intervals on the one surface 11a of the substrate 11 is illustrated, but the semiconductor component of the present invention is not limited to this. In the semiconductor component of the present invention, it is only necessary that a plurality of antennas are arranged and arranged on one surface of the base material, and the antennas are not necessarily arranged at equal intervals. In other words, in this embodiment, the semiconductor device 10 in which the RFID device 14 is arranged on the one surface 11a of the base material 11 at equal intervals is illustrated. However, in the semiconductor component of the present invention, one surface of the base material is used. The RFID devices need only be arranged in a line, and the RFID devices do not necessarily have to be arranged at equal intervals.

  Moreover, in this embodiment, although the semiconductor component 10 which formed the antenna 12 in the coil shape in the one surface 11a of the base material 11 was illustrated, the semiconductor component of this invention is not limited to this. In the semiconductor component of the present invention, the antenna may be formed in a pole shape or a loop shape on one surface of the substrate.

  Furthermore, in this embodiment, although the semiconductor component 10 which consists of the base material 11 and the some RFID apparatus 14 distribute | arranged to the one surface 11a at equal intervals was illustrated, the semiconductor component of this invention is not limited to this. . In the semiconductor component of the present invention, the RFID device may be covered with a covering material made of a thermoplastic resin or the like. If it does in this way, it can prevent that a semiconductor chip falls from a base material and breaks in handling of semiconductor components. Further, it is possible to prevent the semiconductor chip from being damaged when the semiconductor component is diced and cut into small semiconductor components.

  The semiconductor component 10 of this embodiment is cut into dice so as to have only one RFID device 14, and is a minute semiconductor component in contact with the base material 11 on which at least a part of the RFID device 14 is cut. Can do. Accordingly, since the obtained minute semiconductor components can be easily handled individually, it is also easy to rearrange the minute semiconductor components on another base material or the like. The minute semiconductor component can be applied to RDIF media such as a non-contact IC tag, a non-contact IC label, or a non-contact IC card.

Next, with reference to FIGS. 2-8, one Embodiment of the manufacturing method of the semiconductor component based on this invention is described.
In this embodiment, first, as shown in FIG. 2, a disc-shaped semiconductor wafer 21 is bonded to a film made of a disc-shaped thermoplastic resin (hereinafter “thermoplastic resin film”) via an adhesive member (not shown). And a semiconductor wafer 21 is stacked on the thermoplastic resin film 22 as shown in FIG. 3 (step A).

  Any semiconductor wafer 21 that can be applied to RDIF media such as a non-contact type IC tag, a non-contact type IC label, or a non-contact type IC card by dicing to a predetermined size is used. It is done.

  The thermoplastic resin film 22 is not particularly limited as long as it can be applied to a uniaxial stretching method or a biaxial stretching method, which are general film stretching methods, and any film can be used. Examples of the thermoplastic resin film 22 include polyamide resins, polyester resins, polyolefin resins, polyimide resins, ethylene-vinyl alcohol copolymer resins, polyvinyl alcohol resins, polyvinyl chloride resins, and polyvinylidene chloride resins. Film made of thermoplastic resin such as resin, polystyrene resin, polycarbonate resin, acrylonitrile-butadiene styrene copolymer resin, polyethersulfone resin, or such film with a plasticizer blended as necessary Etc. are used. Further, in order to prevent the semiconductor wafer 21 from being destroyed by heat when the thermoplastic resin film 22 is stretched, the thermoplastic resin film 22 is capable of stretching at about 60 ° C. to 150 ° C., that is, A glass transition point of about 60 ° C. to 150 ° C. is desirable.

  In this process A, as an adhesive member used for bonding the semiconductor wafer 21 to the thermoplastic resin film 22, the semiconductor wafer 21 is diced even when the thermoplastic resin film 22 is stretched in the subsequent process. It is desirable that the semiconductor chip to be formed is firmly and firmly fixed at a predetermined position on one surface 22a of the thermoplastic resin film 22 and has an adhesive force that does not drop off from the one surface 22a of the thermoplastic resin film 22. That is, as such an adhesive member, it is desirable that the adhesive force does not change due to heat or tensile force applied when the thermoplastic resin film 22 is stretched. In addition, as such an adhesive member, since the thermoplastic resin film 21 is peeled off from the semiconductor chip formed by dicing the semiconductor wafer 21 in the subsequent step, it can be peeled off even after being attached. Thereafter, an adhesive member that cannot be re-applied is desirable.

 Examples of the adhesive member that can be peeled after sticking and cannot be stuck again after peeling include a thermoplastic resin film that can be heat-sealed. As such a heat-sealable thermoplastic resin film, a material having a peeling force of about 110 gf / 25 mm to 170 gf / 25 mm is used. Examples of such a thermoplastic resin film include polyethylene, polypropylene, ethylene-vinyl acetate copolymer, ethylene-methacrylic acid copolymer, ethylene-methacrylic acid ester copolymer, ethylene-acrylic acid copolymer, ethylene. -Films composed of acrylic acid ester copolymers and cross-linked products of these metals can be mentioned, and among these, transparent ones are desirable.

  Next, as shown in FIG. 4, only the semiconductor wafer 21 bonded to the one surface 22a of the thermoplastic resin film 22 is diced and cut into a plurality of minute semiconductor chips 23, 23,. ).

  In this step B, as a method for dicing the semiconductor wafer 21, blade dicing, laser dicing, or the like is used. Further, in this step B, the dicing of the thermoplastic resin film 22 is not performed simultaneously with the dicing of the semiconductor wafer 21. In this step B, if the thermoplastic resin film 22 is damaged by dicing, the thermoplastic resin film 22 may tear when stretched or individual semiconductor chips may not be separated at a predetermined interval. is there.

  Next, the thermoplastic resin film 22 is stretched, and the semiconductor chips 23 separated by cutting the semiconductor wafer 21 in the process B are individually separated. As shown in FIG. Are arranged at equal intervals on one surface 22a of the stretched thermoplastic resin film 22 with a predetermined interval (step C).

  In this step C, as a method of stretching the thermoplastic resin film 22, a longitudinal uniaxial stretching method (a method of stretching along the longitudinal direction of the film) using a known uniaxially stretched film forming apparatus, or a uniaxially stretched film forming apparatus is used. Horizontal uniaxial stretching method (method of stretching perpendicularly to the longitudinal direction of the film), simultaneous biaxial stretching method using a biaxially stretched film forming apparatus (stretching along the longitudinal direction of the film and stretching perpendicular to the longitudinal direction of the film are simultaneously performed) Method), a sequential biaxial stretching method using a biaxially stretched film forming apparatus (a method in which stretching along the longitudinal direction of the film and stretching perpendicular to the longitudinal direction of the film are performed separately) and the like are used. Using these methods, the thermoplastic resin film is arranged at equal intervals with a predetermined interval on one surface 22a of the thermoplastic resin film 22 on which the semiconductor chips 23,. In order to stretch 22, the stretching direction of the thermoplastic resin film 22, the stretching ratio (elongation), and the like are adjusted. Further, the interval between the semiconductor chips 23, 23,... Is set in another step so as to correspond to the arrangement of a plurality of antennas arranged at equal intervals on the base material at a predetermined interval. The

  Further, in this step C, when the thermoplastic resin film 22 is stretched, the temperature of heat applied to the thermoplastic resin film 22 may be 150 ° C. or less at which the semiconductor wafer 21 (semiconductor chip 23) is not destroyed. desirable.

On the other hand, as shown in FIG. 6, a base material 31 is prepared in which a plurality of coiled antennas 32, 32,... Are arranged on one surface 31 a at equal intervals. In this base material 31, antennas 32, 32,... Are arranged at positions corresponding to the semiconductor chips 23, 23,... Arranged on one surface 22a of the stretched thermoplastic resin film 22. Has been.
In order to form the antennas 32, 32,... On one surface 31a of the substrate 31, the conductive paste is printed on the one surface 31a of the substrate 31 by screen printing in a predetermined pattern, and then the conductive After the paste is dried or a conductive foil is applied, it is etched into a predetermined pattern.

As the base material 31, the thing similar to said base material 11 is used.
As the conductive paste or conductive foil forming the antenna 32, the same one as the antenna 12 described above is used.

  Next, as shown in FIG. 7, the surface (one surface 22 a) on which the semiconductor chips 23, 23,... Of the thermoplastic resin film 22 are provided is the antennas 32, 32,. The stretched thermoplastic resin film 22 is superposed on the base material 31 so as to overlap the surface (one surface 31a) on which the film is provided, and stretched through conductive paste or solder. The semiconductor chips 23, 23,... Arranged on the one surface 22 a of the resin film 22 are electrically connected to the antennas 32, 32,. (Step D).

In this step D, in order to electrically connect the semiconductor chip 23 and the antenna 32, the contact points of the semiconductor chips 23, 23,... Or the contact points of the antennas 32, 32,. Such a conductive paste is applied or a solder ball is provided. When the conductive paste is used, the conductive paste is dried and solidified at a temperature at which the semiconductor chip 23 is not destroyed, and the connection between the semiconductor chip 23 and the antenna 32 is completed. On the other hand, when the solder balls are provided, the solder is reflowed at a temperature at which the semiconductor chip 23 is not destroyed, and then cooled again to complete the connection between the semiconductor chip 23 and the antenna 32.
Further, in this step D, an ACF (Anisotropic Conductive Film), ACP (Anisotropic Film) is connected to the contact points of the antennas 32, 32,... Previously provided on the other surface 31a of the substrate 31. Conductive Paste (anisotropic conductive paste), NCF (Non Conductive Resin Film: non-conductive particle film), NCP (Non Conductive Resin Paste: non-conductive particle paste) and the like are provided, and the thermoplastic resin film 22 is provided thereon. The semiconductor chips 23 and the antenna 32 may be electrically connected by overlapping the contacts of the semiconductor chips 23, 23,... Arranged on the one surface 22a.

  When the thermoplastic resin film 22 that can be stretched at a relatively low temperature is used, in Step D, it is desirable to use a conductive paste in order to electrically connect the semiconductor chip 23 and the antenna 32. This is because if a thermoplastic resin film 22 that can be stretched at a relatively low temperature is used, the thermoplastic resin film 22 contracts at the temperature at which the solder is reflowed, and the position of the semiconductor chip 23 is reduced. This is because the accuracy of connecting the semiconductor chip 23 and the antenna 32 decreases.

  Next, the thermoplastic resin film 22 superposed on the base material 31 is peeled off from the semiconductor chips 23, 23,..., So that the RFID device 35 including a pair of antennas 32 and the semiconductor chip 23 as shown in FIG. , 35,... Are obtained at equal intervals on one surface 31a of the substrate 31 (step E).

  The semiconductor component 40 obtained in this way is diced by using blade dicing, laser dicing, or the like as shown in FIG. It is possible to form a minute semiconductor component 41 formed in contact with the base material 31 that is cut at least partially. Therefore, since the obtained minute semiconductor component 41 is easy to handle individually, it is also easy to rearrange the minute semiconductor component 41 on another base material or the like. The minute semiconductor component 41 can be applied to RDIF media such as a non-contact type IC tag, a non-contact type IC label, or a non-contact type IC card.

  Further, the semiconductor component 40 is diced into individual semiconductor components 41, or the semiconductor component 40 is diced into a long tape-like product in which a large number of semiconductor components 41 are connected in the longitudinal direction. The semiconductor component 41 can be individually arranged at a predetermined position by using a semiconductor component mounting apparatus provided with a component injection nozzle.

  In other words, when the semiconductor component 40 is diced into individual semiconductor components 41, the semiconductor component 41 is loaded into an injection nozzle for the semiconductor component provided in the semiconductor component mounting apparatus, and the adherend is adhered from the injection nozzle. The semiconductor component 41 is injected toward the surface (attachment surface), and is arranged at a predetermined position on the surface of the adherend. On the other hand, when the semiconductor component 40 is diced into a long tape-like product in which a large number of semiconductor components 41 are connected in the longitudinal direction, the tape-like product is placed in the semiconductor component injection nozzle provided in the conductor component mounting device. Each time the semiconductor component 41 is individually diced, the semiconductor component 41 is injected from the injection nozzle toward the surface of the adherend and is disposed at a predetermined position on the surface of the adherend.

  According to the semiconductor component manufacturing method of this embodiment, the semiconductor wafer 21 is diced and cut by controlling the material, stretching direction (uniaxial or biaxial), stretching ratio, and the like of the thermoplastic resin film 22. The chips 23, 23,... Can be individually separated and placed on one surface 22 a of the stretched thermoplastic resin film 22 at a predetermined interval with high accuracy. Therefore, it is possible to easily manufacture the semiconductor component 40 in which the plurality of RFID devices 35 are arranged on the base material 31 at predetermined intervals. In addition, according to the semiconductor component manufacturing method of this embodiment, a plurality of minute semiconductor components 41 having the same size can be manufactured simply by dicing the semiconductor component 40 into a predetermined size. Can be improved.

  The semiconductor component and the manufacturing method thereof according to the present invention can be applied to minute components other than semiconductor chips. That is, by applying the present invention to a minute part having a size equivalent to that of a semiconductor chip, handling by a human can be facilitated.

It is a schematic perspective view which shows one Embodiment of the semiconductor component of this invention, (b) is the figure which expanded the part A enclosed with the broken line of (a). It is a schematic perspective view explaining one Embodiment of the manufacturing method of the semiconductor component which concerns on this invention. It is a schematic perspective view explaining one Embodiment of the manufacturing method of the semiconductor component which concerns on this invention. It is a schematic perspective view explaining one Embodiment of the manufacturing method of the semiconductor component which concerns on this invention. It is a schematic perspective view explaining one Embodiment of the manufacturing method of the semiconductor component which concerns on this invention. It is a schematic perspective view explaining one Embodiment of the manufacturing method of the semiconductor component which concerns on this invention. It is a schematic perspective view explaining one Embodiment of the manufacturing method of the semiconductor component which concerns on this invention. It is a schematic perspective view explaining one Embodiment of the manufacturing method of the semiconductor component which concerns on this invention. It is a schematic perspective view which shows the state which diced the semiconductor component manufactured with the manufacturing method of the semiconductor component which concerns on this invention.

Explanation of symbols

10, 40, 41 ... semiconductor parts, 11, 31 ... base material, 12, 32 ... antenna, 13, 23 ... semiconductor chip, 14, 35 ... RFID device, 21 ... Semiconductor wafer, 22 ... thermoplastic resin film.

Claims (2)

  A semiconductor component comprising: a base material; a plurality of antennas arranged in alignment on the base material; and a plurality of semiconductor chips electrically connected to each of the plurality of antennas. Step A for adhering a semiconductor wafer onto a thermoplastic resin film, Step B for dicing only a semiconductor wafer adhered on the thermoplastic resin film, and dicing in the step B after stretching the thermoplastic resin film Separating the formed semiconductor wafer into a plurality of semiconductor chips, and arranging and arranging the plurality of semiconductor chips on the stretched thermoplastic resin film, and the thermoplastic resin film stretched in the step C, Similar to the plurality of semiconductor chips, a plurality of antennas are superposed on a substrate arranged in alignment, and each of the plurality of semiconductor chips arranged in alignment on the stretched thermoplastic resin film is replaced with the plurality of antenna chips. Step D for electrically connecting to each of the antennas, and a thermoplastic resin film superposed on the base material from the semiconductor chip. The method of manufacturing a semiconductor component, characterized in that and a step E of peeling.

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