JP2000196014A5 - - Google Patents
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- Publication number
- JP2000196014A5 JP2000196014A5 JP1998368970A JP36897098A JP2000196014A5 JP 2000196014 A5 JP2000196014 A5 JP 2000196014A5 JP 1998368970 A JP1998368970 A JP 1998368970A JP 36897098 A JP36897098 A JP 36897098A JP 2000196014 A5 JP2000196014 A5 JP 2000196014A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor chip
- semiconductor
- substrate
- hole
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 description 163
- 239000000758 substrate Substances 0.000 description 45
- 229910052751 metal Inorganic materials 0.000 description 28
- 239000002184 metal Substances 0.000 description 28
- 239000010410 layer Substances 0.000 description 25
- 239000010408 film Substances 0.000 description 23
- 238000002844 melting Methods 0.000 description 18
- 230000000875 corresponding Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 230000002093 peripheral Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000010409 thin film Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000005755 formation reaction Methods 0.000 description 4
- 230000000149 penetrating Effects 0.000 description 4
- 230000001681 protective Effects 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 210000003165 Abomasum Anatomy 0.000 description 1
- 210000000481 Breast Anatomy 0.000 description 1
- 210000001736 Capillaries Anatomy 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 210000002381 Plasma Anatomy 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000002542 deteriorative Effects 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10368970A JP2000196014A (ja) | 1998-12-25 | 1998-12-25 | 半導体チップ、及びその半導体チップが搭載された半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10368970A JP2000196014A (ja) | 1998-12-25 | 1998-12-25 | 半導体チップ、及びその半導体チップが搭載された半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000196014A JP2000196014A (ja) | 2000-07-14 |
| JP2000196014A5 true JP2000196014A5 (ko) | 2005-11-24 |
Family
ID=18493231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10368970A Pending JP2000196014A (ja) | 1998-12-25 | 1998-12-25 | 半導体チップ、及びその半導体チップが搭載された半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000196014A (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002094082A (ja) | 2000-07-11 | 2002-03-29 | Seiko Epson Corp | 光素子及びその製造方法並びに電子機器 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07114253B2 (ja) * | 1989-04-10 | 1995-12-06 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| JP2622038B2 (ja) * | 1991-06-03 | 1997-06-18 | シャープ株式会社 | 半導体装置及びその製造方法 |
| JPH09186308A (ja) * | 1995-12-28 | 1997-07-15 | Toshiba Corp | 固体撮像モジュールの製造方法 |
| JP4011695B2 (ja) * | 1996-12-02 | 2007-11-21 | 株式会社東芝 | マルチチップ半導体装置用チップおよびその形成方法 |
-
1998
- 1998-12-25 JP JP10368970A patent/JP2000196014A/ja active Pending
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