JP2000188455A - Composite material for transfer method, its manufacture, and printed-circuit board and semiconductor device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To facilitate high-density wiring by giving optimum characteristics to a wiring forming material, a barrier material, and a carrier material for composing a composite material for a transfer method. SOLUTION: An orientation property on the surface of a wiring forming material for composing a composite material where a carrier material, a barrier material, and a wiring system forming material are laminated and joined should satisfy a relationship of (200)/((200)+(220)+(311)+(111)+(222))>35%. A barrier material 2 that becomes an intermediate layer while being sandwiched by a wiring forming material 1 and a carrier material 3 forms a continuously surface essentially without any defect. A Cu-system electrolytic foil and a rolled foil with at least a pull strength of 300 Mpa and a width dimension of 300 mm for the carrier material 3. Then, the upper limit of the thickness is set to 5 μm or less. The barrier material 2 is used to prevent an etching liquid from reaching an opposite surface side when the carrier material 3 is eliminated by etching and at the same time the wiring forming material 1 is subjected to wiring patterning with the etching solution. It needs to be a metal with different etching condition from that of the carrier material 3 and the wiring forming material 1, and the barrier material 2 is finally eliminated by etching.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composite material for a transfer method used for a semiconductor package and the like, a method of manufacturing the same, and a printed circuit board and a semiconductor device using the same.

[0002]

2. Description of the Related Art In recent years, there has been a demand for narrower wiring widths used for semiconductor packages due to higher performance of multimedia devices and rapid increase of portable devices. Attempts have been made to address this problem by reducing the thickness of the copper foil in the wiring section to about 5 to 18 μm. Among them, as shown in FIG. 1, a wiring forming material embedded in a resin to become a wiring
(1) and carrier material (3) for improving handling
Used to prevent the etching solution from reaching the wiring forming material when removing the carrier material by etching,
Conversely, when performing wiring patterning of the wiring forming material with an etching solution, a composite material (4) composed of three layers of a barrier material (3) used to prevent the etching solution from reaching the carrier material was used. The technique called the transfer method is suitable for narrowing the pitch, and if the transfer method is used, the copper foil of the wiring transferred to the glass epoxy resin or the like is selected only by the carrier material, and after the etch is removed, only the barrier material is selected. Since it is possible to remove only fine wiring in the glass epoxy resin by removing it by etching, it is an excellent method for miniaturizing a wiring portion.

As a composite material used in this transfer method, for example, a transfer method using a composite material having a three-layer structure as shown in FIGS. 10A to 10F has been proposed. However, as a manufacturing method in this case, the second barrier layer (2) and the third wiring forming layer (1) are laminated on the carrier material (3) by plating (FIG. 10A). ), Laminating a dry film resist (5) on a wiring forming material, forming a resist pattern as shown in FIG. 10 (b) by exposure and development, and then forming a wiring layer by an additive method of electroplating or a modification thereof. (7) is laminated again (FIG. 10 (c)), and the resist is removed (FIG. 10 (c)).
(d)) and press-bond the wiring forming layer to the glass epoxy resin (6) (FIG. 10 (e)), remove the carrier material, the barrier layer, and the wiring forming layer in order by etching, and convert the wiring layer to the glass epoxy resin. Thick electroless Cu plating has a low plating rate (2 μm / H), a large amount of inclusions, and a long time even in electrolytic copper plating using an electrolytic copper bath using copper sulfate foil. At present, the price increases significantly so
It is only used as part of the Flip Chip implementation.

On the other hand, a composite material having a three-layer structure as shown in FIG. 11 has also been proposed. This method comprises laminating a dry film resist (5) on a wiring forming material (1) of a composite material for a transfer method (4), and exposing and developing the same as shown in FIG.
After forming a desired resist pattern as described above, a wiring forming material is selectively etched. (FIG. 11 (c)) Subsequently, the dry film resist remaining on the wiring forming material is removed (FIG. 11 (d)), and the wiring forming material side is placed on a glass epoxy substrate (6) heated to about 180 ° C. Crimp. (FIG. 11E) Next, after removing the carrier material by selective etching, the barrier material is removed by selective etching, and the transfer of the wiring is completed.
(FIG. 11 (f)) This method is excellent as a method capable of responding to a narrower pitch and reducing the cost.
No. 3510. However, in the composite material having a three-layer structure shown in FIG. 11, the thickness required for the barrier material and the wiring forming material is formed by lamination by the above-described plating method, so that only a thickness of about 2 to 3 μm can be obtained at 1 Path. 10 μm, which is not required to pass the number of passes several times
Not only is not suitable for mass production because it cannot be subjected to Cu plating, but also 300 mm which is necessary for mass-producing wiring by etching on a wiring forming material of a three-layered composite material.
It was almost impossible to obtain a composite material having a size of about 300 mm or more at low cost.

[0005]

As described above, since conventionally used composite materials having a three-layer structure are manufactured using a plating method, they cannot be applied to mass production due to plating restrictions. No studies have been made on various issues such as the etching characteristics of the wiring forming material constituting the legal composite material, the optimum thickness of the barrier material, and the improvement of the handling and etching properties of the carrier material. Was. An object of the present invention is to provide an electronic material (1992, vol. 31, No. 10,
119-), Reliability Society Transactions C-11 (1989 vol.J72-C)
-11, No.4, P243 ~), Journal of the Printed Circuit Society of Japan (1989 vol.
4, No. 3, p. 165), and TLC (Transfer Lami), which is a production method thereof, introduced in JP-A-8-293510.
nate Circuit), which relates to a three-layer composite material, and provides unprecedented characteristics to the wiring forming material, barrier material, and carrier material that compose the transfer method composite material.
An object of the present invention is to provide a composite material for a transfer method which facilitates higher density wiring, a method for manufacturing the same, and a printed circuit board and a semiconductor device using the same.

[0006]

SUMMARY OF THE INVENTION The present inventor has studied the above-mentioned problems and has given optimum characteristics to a wiring forming material, a barrier material, and a carrier material which constitute a composite material for a transfer method.
A composite material for a transfer method suitable for higher-density wiring can be obtained, and a novel production method which has not been studied in the past for a method for producing the composite material for a transfer method has been found, and the present invention has been achieved.

That is, the present invention is a composite material in which a carrier material, a barrier material, and a wiring forming material are laminated and joined, and the orientation of the surface of the wiring forming material is (200) / ((20)
0) + (220) + (311) + (111) + (22
2)) A composite material for a transfer method satisfying a relationship of> 35%, preferably, the barrier material is a composite material for a transfer method having a substantially defect-free continuous surface. More preferably, the width is 300 mm or more and the plate thickness is 50 μm or less, and the wiring forming material is a composite material for a transfer method, which is a Cu-based electrolytic foil, or the width of the composite material is 300 mm or more and the plate thickness is The wiring forming material is a composite material for a transfer method, which is a rolled Cu-based foil.

Preferably, in the present invention, the carrier material is a composite material for a transfer method having a tensile strength of 300 MPa or more. In the present invention, the barrier material is formed by nickel plating of 3 μm or less, or the barrier material is a composite material for a transfer method formed by vapor deposition of nickel of 3 μm or less. In the present invention, more preferably, the composite material for a transfer method, wherein the tensile strength in the rolling direction of the composite material is 250 MPa or more.
The present invention is a composite material for a transfer method in which wiring is formed on a wiring forming material by etching.

Further, according to the present invention, there is provided a printed circuit board in which wiring is transferred to a resin using the above-described composite material for a transfer method. In addition, the wiring is transferred to a resin using the composite material for a transfer method of the present invention. This is a transferred semiconductor device.

In the method for producing a composite material for a transfer method according to the present invention, one or both of a bonding material of a band material formed by laminating a carrier material and a barrier material and a bonding material of a wiring material are rolled by rolling. This is a method for producing a composite material for a transfer method to be laminated and joined. Also, the present invention relates to a method of manufacturing a composite material for a transfer method, in which one or both of a bonding surface of a carrier material and a band material in which a wiring forming material and a barrier material are laminated are activated and then laminated and bonded by rolling. Still further, the present invention relates to a method for producing a composite material for a transfer method, wherein a barrier material is vapor-deposited on one or both of a wiring forming material and a carrier material, and the laminate is joined by rolling so that the barrier material serves as an intermediate layer. The present invention is also a method for producing a composite material for a transfer method, in which a wiring material and a carrier material are laminated and joined by rolling so that a barrier material is used as an intermediate layer, and then the obtained composite material for a transfer method is heated. .

[0011]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The most significant feature of the present invention is that the orientation of the surface of a wiring forming material constituting a composite material in which a carrier material, a barrier material, and a wiring forming material are laminated and joined is (200) /
((200) + (220) + (311) + (111) +
(222))> 35%. In order to provide the wiring forming material with etching characteristics capable of coping with a narrower pitch, the crystal orientation of the surface required by the above relationship is set to (200) / ((200) + (22)
0) + (311) + (111) + (222))> 35
%, More preferably (200) / ((200) + (22)
0) + (311) + (111) + (222))> 70%
It is good to adjust to. This is because when the orientation of the crystal on the surface is measured using an X-ray diffractometer, (200), (22)
The main directions of (0), (311), (111), and (222) are measured. Of these, the (200) orientation is a surface on which a crystal lattice perpendicular to the surface can be obtained, so that it is particularly effective for suppressing side etching and can also eliminate wiring width defects such as chipping of wiring. Therefore, it is necessary to accumulate in this direction as much as possible.

In the composite material of the present invention, the barrier material sandwiched between the wiring forming material and the carrier material and serving as an intermediate layer preferably forms a substantially defect-free continuous surface.
A substantially defect-free continuous surface means that when a cross section of a composite material is observed with a microscope, for example, as shown in FIG. Say Specifically, it refers to a state in which the carrier material is not etched when the wiring material is etched, and the wiring material is not etched when the carrier material is etched.

[0013] The wiring forming material of the present invention can be obtained by using a Cu-based electrolytic foil having a width of 300 mm or more manufactured on a separate line,
Alternatively, by using a Cu-based rolled foil, it is possible to mass-produce wiring at low cost by a printed circuit board maker. At this time, the width of the electrolytic foil is 1000 mm or more, and the width of the rolled foil is 6 mm or more.
It is particularly preferable to select the one having a thickness of 00 mm or more because the productivity can be further improved. In this case, the thickness of the wiring forming material may be appropriately selected from a relatively large one and a thin one depending on the wiring pitch by etching.
If the thickness is larger than m, the time required for etching the wiring becomes longer and the productivity is reduced. Therefore, the upper limit of the thickness is 50 μm or less. More preferably, it is 18 μm or less, even more preferably 10 μm or less.

When a Cu-based electrolytic foil is used as a wiring forming material, it is necessary to select a suitable electrolytic foil depending on the use. For example, an ultra-thin copper foil having a thickness of 5 μm or 9 μm is used for the purpose of forming an ultra-high-density wiring. In the present invention, when a Cu-based electrolytic foil is used as a wiring forming material, in order to suppress side etching that hinders finer wiring, the side where etching is started has a shiny surface having a fine metal structure. good. More preferably, as a factor of the change in the crystal grain size of the electrolytic foil, the largest one is due to the glue of Cl ⁻ and the additive in the electrolytic solution, for example, in the electrolytic solution for growing the columnar structure of the electrolytic foil. The one in which the growth of the columnar structure is suppressed at a concentration of glue by adding Cl ⁻ to the concentration of the electrolytic solution is particularly preferable for the etching characteristics because the average crystal grain size is fine.

Further, in the present invention, when a rolled foil is used as a wiring forming material, since the rolled foil itself has substantially no defects such as pinholes, it is possible to obtain wiring having extremely few defects, For example, when a part of a wiring is subjected to a bending process, a defect of the wiring such as generation of a crack can be eliminated. At this time, oxygen-free copper and tough pitch copper may be used from the viewpoint of availability, and it is preferable to select a material obtained by a manufacturing method in which nonmetallic inclusions are reduced in the metal structure.

Next, as the carrier material of the composite material for a transfer method of the present invention, it is desirable to use a rolled foil or an electrolytic foil having a tensile strength of 300 MPa. This is because the rigidity required of the carrier material can be satisfied, and the use of the carrier material with high rigidity improves the handleability. At this time, if a foil having the above-mentioned tensile strength of 300 MPa or more is used, the thickness of the carrier material itself can be reduced, so that when the carrier material is removed by etching, the time required for etching becomes extremely short, and especially in mass production. It will be excellent. Furthermore, in this case, the rolled foil is particularly suitable because it can be adjusted to a tensile strength of 300 MPa or more at a thinner thickness as compared with the electrolytic foil. In this case, the carrier material may be different from the barrier material in etching conditions. Preferably, a Cu-based foil having the same quality as the wiring forming material is used. The preferable thickness is 15 to 200 μm in consideration of etching properties and handling properties.

As described above, the tensile strength is 300 MPa
When the above carrier material is used, when the composite material for a transfer method having a three-layer structure to be described later is used, the tensile strength in the rolling direction is 250MP.
It can be adjusted more easily than a. Since the composite material for transfer method is transferred to a resin substrate, depending on the required shape,
Bending or drawing may also be added, and the tensile strength in the rolling direction is preferably 250 MPa or more, more preferably the tensile strength in the width direction is also 250 MPa.
I just need more.

Next, the barrier material is used to prevent the etching solution from reaching the opposite side when the carrier material is removed by etching and when the wiring forming material is subjected to wiring patterning with the etching solution. As described above, it is preferable to form a continuous surface that is substantially free from defects, and it is necessary that the metal be different in etching conditions from the carrier material and the wiring forming material. Further, since the barrier material is finally removed by etching, the thinner the better, the better, 3 μm or less, more preferably 1 μm
The following nickel plating or nickel deposition is preferred.

Specifically, for example, when the wiring forming material and the carrier material are oxygen-free copper, the barrier material is nickel, gold,
It is preferable to form a metal layer of solder, tin, silver, etc. by a wet or dry plating method.In particular, it is preferable to select nickel plating which is excellent in mass productivity. Thus, a barrier layer can be formed continuously.

In forming the barrier layer by the above-mentioned hoop nickel plating, for example, as shown in FIG. 7, a metal foil (18) unwound from an unwinding coil (17) is degreased in a degreasing tank (19). Rinse with water (20), repeat plating with nickel plating tank (21), rinse with water, dry with dryer (22),
The two-layer composite material on which the barrier layer is formed is wound by the winding coil (23). At this time, a nickel electrode (24) is provided in the nickel plating tank as shown in FIG. 8 and a nickel plating forming apparatus using a shielding plate (25) for preventing the plating from wrapping around from the side of the metal foil. If a nickel-plated barrier layer is formed, a strip having a two-layer structure in which a barrier layer of 5 μm or less is formed stably can be obtained. The above-described barrier layer may be formed on a foil material for a wiring forming material or a foil material for a carrier material, but is preferably formed on a foil material for a carrier material having a relatively large thickness.

In the present invention, after forming a barrier layer on one surface of a wiring forming material or a carrier material as described above,
By cladding, a composite material for a transfer method having a three-layer structure is obtained.
At this time, the above-mentioned band material having the two-layer structure and the press-bonded surface side of the wiring forming material or the carrier material are activated using a vacuum cladding apparatus as shown in FIG. It is preferable to apply pressure reduction of 60% or less and press-bond and laminate-join. After activation treatment, those subjected to cold-roll bonding at a low reduction rate in vacuum have good pressure-bonding and good flatness of the bonding interface. .

In the present invention, as a method of activating the bonding surface, there is ion etching or the like.
A magnetron sputtering method using a high-frequency power supply of about 50 MHz can be employed. Specifically, for example, when the etching chamber and the rolling chamber are provided with a vacuum pressure bonding apparatus for metal foil having a structure in which a vacuum pump is provided in each of the etching chamber and the rolling chamber, when the etching is performed, the etching chamber is used. 1
When the pressure is reduced to × 10 ⁻² Pa or less and, for example, an argon gas is introduced and an argon gas atmosphere of the order of 10 −10 ⁻² Pa is applied, a high frequency is applied between the rolling chamber and plasma is generated in the etching chamber. Activate the bonding surface. Also,
As the gas to be introduced, in addition to the above-described argon gas, a gas such as neon, helium, krypton, xenon, radon, nitrogen, hydrogen, or a mixed gas of hydrogen and an inert gas can be used.

In the present invention, reactive ion etching or the like, which can be etched by a physical / chemical method, can also be employed. In the present invention, when activating the bonding surface by reactive ion etching, for example, to remove a specific substance such as an oxide layer removal formed on the bonding surface surface by reactive ion etching and harmful at the time of pressure bonding, Compared to physical etching using ordinary argon gas, the etching rate is high and the removal can be performed effectively, so that a significant effect is brought about in increasing the etching speed, which is effective. When reactive ion etching is employed in the present invention, the gas to be used is, for example, CF ₄ + H ₂ , C ₂ F
A gas such as ₆ may be used.

Further, in order to further increase the speed in the ion etching of the present invention, for example, of the substances formed on the surface of the bonding surface, those substances which take a long time to remove by, for example, magnetron sputtering, are reacted. Combination with magnetron sputtering after high-speed removal by ionic ion etching is particularly effective because the bonding surface can be cleaned very well and activated at high speed.

Further, in the present invention, after the joint surface is activated by the above-mentioned method or the like, the laminate surface is joined by rolling. As the rolling of the present invention, it is preferable to perform cold rolling after the activation treatment. In the present invention, the term “cold” refers to a temperature from room temperature to the transformation point or lower. When a material having no transformation point is used, the temperature is set to a recrystallization temperature or lower. When there is a large difference in the expansion coefficient, it is preferable to perform rolling at a temperature in the range of room temperature to 100 ° C., and when the bonding strength is weak, heat treatment is performed. Also, as the reduction rate, when adjusting the thickness by rolling,
It must be up to 60%. This is because if it exceeds 60%, the barrier material breaks and a continuous surface substantially free of defects cannot be obtained. It is preferably at most 40%, more preferably at most 10%. When the thickness of the carrier material or the wiring forming material is previously processed to the required thickness, sufficient bonding strength should be provided at a low reduction ratio of about 0.1 to 1%. And the flatness of the interface is improved.

According to the method for producing a composite material for a transfer method of the present invention, a barrier layer is formed by vapor deposition as a barrier material on one or both of a carrier material and a wiring forming material, and is rolled so that the barrier layer becomes an intermediate layer. They may be joined. When the barrier material is formed only on one of the carrier material and the wiring forming material, there is an advantage that the production equipment is simplified. However, when vapor deposition is performed on both of them, the bonding becomes stronger, so that the production conditions are stabilized. Further, heat treatment may be performed to further improve the bonding strength. Specifically, it can be continuously manufactured in a vacuum tank provided with a vapor deposition device and a rolling device as shown in FIG. In this method, since the bonded surface of the vapor-deposited barrier material is activated, a three-layer composite material can be easily manufactured by pressure bonding by rolling of about several percent.

As the vapor deposition referred to in the present invention, a physical vapor deposition method such as a chemical vapor deposition method, a vacuum vapor deposition method, a sputtering method, an ion plating method, a molecular beam vapor deposition method, and a reactive PVD method can be employed. In the formation of the adhesion of the barrier material and the wiring forming material of the present invention, the speeding up of recent film forming techniques is remarkable.
A vacuum evaporation method, a sputtering method, and a physical evaporation method such as an ion plating method are preferable, and most preferably, a vacuum evaporation method which is excellent in productivity and has a simple apparatus structure, or a sputtering method capable of dense film formation. It is to use. In the sputtering method, nickel, gold, tin,
In addition to silver, zinc and aluminum, titanium, chromium, molybdenum,
A high melting point metal such as platinum can be used, and a diffusion layer is not easily formed in a boundary layer between a barrier material and a wiring forming material or a carrier material. When these physical vapor deposition methods are used, the thickness of the metal layer to be formed is easily controlled to be uniform, and the obtained metal layer is also uniform.

In the present invention, the three-layer composite material can be heated for the purpose of improving the bonding strength after the lamination bonding by rolling as described above. The heating temperature after crimping is preferably set as low as possible in order to reduce deterioration in handling properties due to expansion and softening of the material and randomization of orientation due to recrystallization of the material. Since heating is performed in a thickened state, it is possible to heat to a relatively high temperature. For example, C is used for wiring forming material and carrier material.
u and nickel as the barrier material, the heating temperature is 3
It can be set to 00 ° C. Heating is preferably performed continuously on the strip being conveyed. However, if the heating rate is not sufficient, the coil after winding may be heated. As a method of heating the strip being transported, a heating device may be attached on the transport path.

A resist film is laminated on the wiring forming material of the composite material for a transfer method obtained by the above-described method, exposed and developed, and then the unnecessary resist film is removed to obtain a desired wiring (circuit). ) Is formed, and the exposed wiring forming material is selectively etched to obtain a composite material having wiring formed thereon. Alternatively, after etching into a desired wiring shape, wiring may be formed on a resin substrate by using a transfer method to form a printed circuit board. At this time,
As a resin substrate, glass epoxy, polyimide, BT
Resin can be used.

Further, since the present invention is suitable for high-density wiring with a narrow pitch, the number of stacked layers in the conventional build-up can be reduced. Therefore, if the printed circuit board of the present invention is used, the wiring density of the printed circuit board itself can be increased, and a build-up board in which the printed circuit boards of the present invention are stacked, for example, flip-chip mounting, Wafer Level CSP
It is particularly effective for such applications.

Further, according to the present invention, a semiconductor device can be formed by using the above-mentioned printed board or build-up board.
Although the semiconductor device of the present invention is not particularly limited, a preferred example thereof is a solder ball for guiding a signal from a semiconductor chip (10) to the outside as shown in FIG.
Through (8), the semiconductor device can be a flip-chip mounted semiconductor device in which a signal is transmitted to a build-up board (14) in which a plurality of printed boards (13) are stacked. The use of an excellent conductor plate
Semiconductor device (Flip Ch) directly mounted on build-up board
It is particularly suitable for ip, Wafer Level Package). In addition,
The solid via shown in FIG. 4 can be formed by a method in which a conical Ag paste is passed through a prepreg, but a plating method may be employed.

Further, in FIG. 4 shown as an example, both surfaces of the build-up substrate are surface-mounted by plating. However, when wiring is formed by plating, it takes time to form a plurality of wirings. Many are required, and it is difficult to form wiring with a narrow pitch. Therefore, also in this surface mounting, if wiring is formed by a transfer method using the conductive plate having excellent etching properties of the present invention, sufficient high-density wiring can be formed by forming one to two layers on both surfaces. As a result, it is possible to shorten the wiring formation time and obtain a thinner build-up substrate. Note that the build-up board here is, for example, a base part made of a glass epoxy laminated board, and a through hole connecting the surface of the base is filled with epoxy resin, a built-up surface mount, or the above-described one. This refers to a combination of a build-up board and surface mounting.

The present invention also relates to a method for forming a bonding wire from a semiconductor chip (10) sealed in a semiconductor epoxy resin (12) and bonded with a die bonding material (9) as shown in FIG.
Signals are transmitted to the copper wiring (15) formed on the glass epoxy resin substrate (6) through (11), and the copper wire plate is a BGA with a structure to guide signals to the outside with solder balls (8) etc. Can also. In the present invention, for example, a heat spreader (16) may be used as a temporary substrate as shown in FIG.
It is also suitable for SP, multi-layer BGA, and the like.

[0034]

The present invention will be described below in more detail by way of examples. 350mm width, 1 thickness as wiring forming material
A strip of 0 μm oxygen-free copper rolled foil was prepared. Next, a strip of electrolytic copper foil having a width of 350 mm and a thickness of 18 μm and a strip of rolled oxygen-free copper foil having a width of 350 mm and a thickness of 25 μm were prepared as carrier materials. In addition, the tensile strength of the electrolytic copper foil of the carrier material was measured according to JIS C 6515,
MPa. Similarly, it was confirmed that the tensile strength of the oxygen-free copper rolled foil was 350 MPa.

Using a nickel hoop plating forming apparatus shown in FIG. 7, a 0.5 μm thick barrier layer was formed on the shiny surface of the carrier material of the electrolytic copper foil. 1 was obtained. Similarly, a barrier layer having a thickness of 0.5 μm is formed on one side of the oxygen-free copper rolled copper foil as a carrier material.
o. 2 was obtained. Further, a barrier layer having a thickness of 0.5 μm was formed on one surface of the wiring forming material of the oxygen-free copper rolled foil. 3 was obtained. In addition, with the shielding plate shown in FIG.
No wraparound of nickel plating during formation of the barrier layer could be confirmed.

Next, the above two-layer composite material no. 1 is set as a metal foil unwinding coil (26) in the rolling chamber (32) of the vacuum cladding apparatus shown in FIG. 9, and an oxygen-free copper rolled foil for wiring forming material is set as a metal foil unwinding coil (26). And a vacuum pump (27). Next, each metal foil (18) unwound from the unwinding coil is placed in an etching chamber.
(28) The bonding surface activation device (29) installed in the, subjected to the activation treatment of the bonding surface, and pressed by a rolling roll (30),
The laminated composite material (31) is used for the composite material winding coil (3
The band-shaped composite material for the transfer method wound up by 3) is No. 4
And In the same manner as described above, No. Electrolytic copper foil as a carrier material was laminated and joined to the composite material having a two-layer structure of No. 3 to form a band-shaped composite material for transfer method No. 3. 5 and No. 5 The oxygen-free copper rolled foil as a carrier material was laminated and joined to the two-layer composite material of No. 3 to obtain a belt-shaped composite material for transfer method No. 3. No. 6, and no. In the composite material having a two-layer structure, a wiring forming material of an oxygen-free copper rolled foil was laminated and joined. 7 was set.

As another method, the thickness 10 μm is used.
m oxygen-free copper rolled foil as wiring forming material, thickness 18 μm
Was set in the apparatus shown in FIG. 12 as a carrier material, and a vacuum was drawn by a vacuum pump (27). Next, each of the unwound metal foils is opposed to a nickel evaporation source (34), and in each case nickel is vapor-deposited at a thickness of 0.3 μm, and the rolled roll (30) is used for a transfer method in which the vapor-deposited surface is a bonding surface. The composite material for No. And 8. Further, a rolled oxygen-free copper foil having a thickness of 10 μm is formed by the same method as described above,
A composite material for a transfer method in which a 25 μm-thick oxygen-free copper rolled foil was joined as a carrier material was No. 2; It was set to 9.

Further, the above-described 10 μm thick oxygen-free copper rolled foil was set as a wiring forming material, and the 18 μm thick electrolytic copper foil was set as a carrier material in the apparatus shown in FIG.
Vacuum was applied by (27). Next, each of the unwound metal foils is opposed to a nickel evaporation source (34), nickel is vapor-deposited at a thickness of 0.2 μm, and a roll is used as a bonding surface.
After being laminated and joined by (30), 26
The transfer method composite material heated to 0 ° C. It was set to 10.
Further, a composite material for a transfer method in which a rolled oxygen-free copper foil having a thickness of 10 μm was bonded as a wiring material and a rolled oxygen-free copper foil having a thickness of 25 μm was bonded as a carrier material in the same manner as described above was used as a No. 2 composite material. 11
And

For comparison, heat treatment was performed at a high temperature, and the orientation of the surface of the wiring forming material was changed to (200) / ((20)
0) + (220) + (311) + (111)) <35%
Was used. That is, the above-mentioned 10 μm-thick oxygen-free rolled copper was used as a wiring forming material, and an 18 μm-thick electrolytic copper foil was used as a carrier material, set in the apparatus shown in FIG. 12, and evacuated by a vacuum pump (27). Next, each unwound metal foil is opposed to a nickel evaporation source (34), nickel is vapor-deposited at a thickness of 0.2 μm, and the vapor-deposited surface is bonded to the rolled roll (30).
Transfer the composite material for transfer method heated to 600 ° C by (35) with N
o. It was set to 12. The configurations of Nos. 4 to 12 are shown in Table 1 below.

[0040]

[Table 1]

The cross section of the above-mentioned composite material for transfer method was observed with a microscope. FIG. 1 shows a cross-sectional view of No. 4. Other Nos.
5-No. The cross-sectional form of the composite material of No. 12 is almost the same,
It was confirmed that the barrier material was a continuous surface substantially free of defects. In addition, when the tensile strength of these composites in the rolling direction was measured according to JISC 6515, all were 3
It was 80 MPa or more. Further, the orientation of the surface of the wiring forming material was measured with an X-ray diffractometer (RINT2000) manufactured by Rigaku Corporation. At this time, the X-ray output was 8 kW, the scan speed was 2 ° / min, and the scan step was 0.020.
° and the scanning range (2θ) were 40 ° to 140 °. The ratio (%) of the integrated intensity of the measurement result is shown in the table below.

[0042]

[Table 2]

These Nos. 5-No. For the composite material of No. 12, after covering the surface of the carrier material with a resist,
Was immersed in an alkaline etchant solution for 10 minutes to etch the wiring forming material. As a result, no. Only the sample No. 12 was left unmelted in the wiring forming material and was not sufficiently etched.

Next, the above No. 5-No. Using the composite material for transfer method No. 11, pattern etching of wiring was performed. As shown in FIG. 2, a dry film resist (5) is laminated on the wiring forming material (1) of the composite material for transfer method (4), and a desired resist pattern is formed by exposure and development. The material was selectively etched to produce a composite material for a transfer method. (FIG. 2 (b)) Subsequently, the dry film resist remaining on the wiring forming material is removed, and the wiring forming material side is pressure-bonded to a concave glass epoxy substrate (6) heated to about 180 ° C. (Figure 2
(c)) Next, after removing the carrier material (3) by selective etching, the barrier material is removed.
(2) is removed by selective etching (FIG. 2 (d)), and the transfer of the wiring is completed. Then, nickel plating and Au plating are applied, solder balls (8) are welded, and a die bonding material (9) is used. Then, a semiconductor chip (10) was mounted, a semiconductor chip terminal and a wiring were connected by a bonding wire (11), and the semiconductor chip was sealed with an epoxy resin for semiconductor (12) to produce a semiconductor device shown in FIG. 2 (e). .

Further, as a printed circuit board (13) requiring particularly high-density wiring, a composite material for a transfer method in which wiring shown in FIG. 3A is formed on upper and lower surfaces on which small and high-density components are mounted is used. (Steps up to the formation of the wiring are not shown), and a printed board was manufactured on the build-up board (14) as shown in FIG.

[0046]

According to the combination of the composite material and the transfer method of the present invention, it can sufficiently cope with rapidly developing CSP and BGA wire bonding and TAB technology, and has a W / B of 70 to 8.
A pitch of 0 μm and a pitch of 50 μm with TAB are possible.
The means of the present invention is also effective for a built-up substrate technology, and the built-up technology requires capital investment, but the present invention has an advantage that conventional equipment can be used.

[Brief description of the drawings]

FIG. 1 is a micrograph and a schematic view showing a cross-sectional form of a composite material for a transfer method of the present invention.

FIG. 2 is a diagram illustrating a method for manufacturing a semiconductor device using the composite material for a transfer method of the present invention.

FIG. 3 is a view showing a method for manufacturing a printed circuit board using the composite material for a transfer method of the present invention.

FIG. 4 is a configuration diagram of a semiconductor device illustrating an example of the present invention.

FIG. 5 is a configuration diagram of a semiconductor device illustrating an example of the present invention.

FIG. 6 is a configuration diagram of a semiconductor device illustrating an example of the present invention.

FIG. 7 is a configuration diagram illustrating an example of a nickel plating forming apparatus.

FIG. 8 is a configuration diagram illustrating an example of a nickel plating forming apparatus.

FIG. 9 is a configuration diagram illustrating an example of an apparatus for manufacturing a composite material for a transfer method according to the present invention.

FIG. 10 is a diagram illustrating an example of a transfer method.

FIG. 11 is a diagram illustrating an example of a transfer method.

FIG. 12 is a configuration diagram illustrating an example of an apparatus for manufacturing a composite material for a transfer method according to the present invention.

[Explanation of symbols]

1 wiring forming material, 2 barrier material, 3 carrier material, 4
Composite material for transfer method, 5 dry film resist, 6 glass epoxy board, 7 wiring layer, 8 solder ball, 9
Die bond material, 10 semiconductor chip, 11 bonding wire, 12 epoxy resin for semiconductor, 13 printed board, 14 build-up board, 15 copper wiring, 16
Heat spreader, 17 Metal foil unwinding coil, 1
8 metal foil, 19 degreasing tank, 20 washing tank, 21 nickel plating tank, 22 dryer, 23 winding coil,
24 nickel electrode, 25 shielding plate, 26 metal foil unwinding coil, 27 vacuum pump, 28 etching chamber,
29 bonding surface activation device, 30 rolling roll, 31 composite material, 32 rolling room, 33 composite material winding coil,
34 evaporation source, 35 heating device.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI theme coat ゛ (Reference) // B23K 101: 42

Claims (15)

[Claims] 1. A composite material in which a carrier material, a barrier material, and a wiring forming material are laminated and joined, and the orientation of the surface of the wiring forming material is (200) / ((200) + (22)
0) + (311) + (111) + (222))> 35%
A composite material for a transfer method, characterized by satisfying the following relationship: 2. The composite material for a transfer method according to claim 1, wherein the barrier material forms a continuous surface having substantially no defects. 3. The composite material for a transfer method according to claim 1, wherein the wiring forming material has a width of 300 mm or more, a plate thickness of 50 μm or less, and is a Cu-based electrolytic foil. 4. The composite material for a transfer method according to claim 1, wherein the wiring forming material has a width of 300 mm or more, a plate thickness of 50 μm or less, and is a Cu-based rolled foil. 5. The composite material for a transfer method according to claim 1, wherein the carrier material has a tensile strength of 300 MPa or more. 6. The composite material for a transfer method according to claim 1, wherein the barrier material is formed by nickel plating having a thickness of 3 μm or less. 7. The composite material for a transfer method according to claim 1, wherein the barrier material is formed by vapor deposition of nickel having a thickness of 3 μm or less. 8. The tensile strength of the composite material in the rolling direction is 25%.
The composite material for a transfer method according to any one of claims 1 to 8, wherein the composite material has a pressure of 0 MPa or more. 9. The composite material for a transfer method according to claim 1, wherein a wiring is formed on the wiring forming material by etching. 10. A printed circuit board, wherein a wiring is transferred to a resin using the composite material for a transfer method according to claim 10. 11. A semiconductor device, wherein a wiring is transferred to a resin using the composite material for a transfer method according to claim 10. 12. A composite for a transfer method, comprising activating one or both of a bonding material of a strip material formed by laminating a carrier material and a barrier material, and a bonding surface of a wiring forming material, and then laminating and bonding by rolling. The method of manufacturing the material. 13. A composite for a transfer method, comprising activating one or both of a bonding surface of a carrier material and a band material in which a wiring material and a barrier material are laminated, and then laminating and bonding by rolling. The method of manufacturing the material. 14. A method for producing a composite material for a transfer method, comprising: depositing a barrier material on one or both of a wiring forming material and a carrier material; and laminating and joining the barrier material to an intermediate layer by rolling. . 15. The method of manufacturing a composite material for a transfer method according to claim 13, wherein the composite material for a transfer method is heated after being laminated and joined by the method for producing a composite material for a transfer method according to claim 13. Production method.