JP2000188423A - 窒化物半導体素子の形成方法 - Google Patents

窒化物半導体素子の形成方法

Info

Publication number
JP2000188423A
JP2000188423A JP2000039758A JP2000039758A JP2000188423A JP 2000188423 A JP2000188423 A JP 2000188423A JP 2000039758 A JP2000039758 A JP 2000039758A JP 2000039758 A JP2000039758 A JP 2000039758A JP 2000188423 A JP2000188423 A JP 2000188423A
Authority
JP
Japan
Prior art keywords
nitride semiconductor
layer
semiconductor layer
forming
type impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000039758A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000188423A5 (enExample
Inventor
Takashi Kubota
傑 窪田
Takashi Mukai
孝志 向井
Shuji Nakamura
修二 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP2000039758A priority Critical patent/JP2000188423A/ja
Publication of JP2000188423A publication Critical patent/JP2000188423A/ja
Publication of JP2000188423A5 publication Critical patent/JP2000188423A5/ja
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP2000039758A 2000-01-01 2000-02-14 窒化物半導体素子の形成方法 Pending JP2000188423A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000039758A JP2000188423A (ja) 2000-01-01 2000-02-14 窒化物半導体素子の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000039758A JP2000188423A (ja) 2000-01-01 2000-02-14 窒化物半導体素子の形成方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP18707097A Division JP3314671B2 (ja) 1997-07-14 1997-07-14 窒化物半導体素子

Publications (2)

Publication Number Publication Date
JP2000188423A true JP2000188423A (ja) 2000-07-04
JP2000188423A5 JP2000188423A5 (enExample) 2005-05-19

Family

ID=18563275

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000039758A Pending JP2000188423A (ja) 2000-01-01 2000-02-14 窒化物半導体素子の形成方法

Country Status (1)

Country Link
JP (1) JP2000188423A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002185082A (ja) * 2000-12-15 2002-06-28 Nichia Chem Ind Ltd 窒化物半導体レーザアレイ

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0233993A (ja) * 1988-07-22 1990-02-05 Matsushita Electric Ind Co Ltd 半導体レーザ
JPH0745908A (ja) * 1993-07-28 1995-02-14 Sony Corp 半導体レーザー
JPH0832111A (ja) * 1994-07-14 1996-02-02 Omron Corp 半導体発光素子並びに当該半導体発光素子を利用した発光装置、光学検知装置、光学情報処理装置及び光結合装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0233993A (ja) * 1988-07-22 1990-02-05 Matsushita Electric Ind Co Ltd 半導体レーザ
JPH0745908A (ja) * 1993-07-28 1995-02-14 Sony Corp 半導体レーザー
JPH0832111A (ja) * 1994-07-14 1996-02-02 Omron Corp 半導体発光素子並びに当該半導体発光素子を利用した発光装置、光学検知装置、光学情報処理装置及び光結合装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002185082A (ja) * 2000-12-15 2002-06-28 Nichia Chem Ind Ltd 窒化物半導体レーザアレイ

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