JP2000117616A5 - - Google Patents

Download PDF

Info

Publication number
JP2000117616A5
JP2000117616A5 JP1999101276A JP10127699A JP2000117616A5 JP 2000117616 A5 JP2000117616 A5 JP 2000117616A5 JP 1999101276 A JP1999101276 A JP 1999101276A JP 10127699 A JP10127699 A JP 10127699A JP 2000117616 A5 JP2000117616 A5 JP 2000117616A5
Authority
JP
Japan
Prior art keywords
grindstone
abrasive grains
activation treatment
holding
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999101276A
Other languages
English (en)
Japanese (ja)
Other versions
JP3770752B2 (ja
JP2000117616A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP10127699A priority Critical patent/JP3770752B2/ja
Priority claimed from JP10127699A external-priority patent/JP3770752B2/ja
Priority to TW088106656A priority patent/TW429462B/zh
Priority to US09/371,003 priority patent/US6612912B2/en
Priority to KR1019990032722A priority patent/KR100574323B1/ko
Publication of JP2000117616A publication Critical patent/JP2000117616A/ja
Publication of JP2000117616A5 publication Critical patent/JP2000117616A5/ja
Application granted granted Critical
Publication of JP3770752B2 publication Critical patent/JP3770752B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP10127699A 1998-08-11 1999-04-08 半導体装置の製造方法及び加工装置 Expired - Fee Related JP3770752B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP10127699A JP3770752B2 (ja) 1998-08-11 1999-04-08 半導体装置の製造方法及び加工装置
TW088106656A TW429462B (en) 1998-08-11 1999-04-26 Manufacturing method and processing device for semiconductor device
US09/371,003 US6612912B2 (en) 1998-08-11 1999-08-10 Method for fabricating semiconductor device and processing apparatus for processing semiconductor device
KR1019990032722A KR100574323B1 (ko) 1998-08-11 1999-08-10 반도체장치의 제조방법 및 가공장치

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP22687298 1998-08-11
JP10-226872 1998-08-11
JP10127699A JP3770752B2 (ja) 1998-08-11 1999-04-08 半導体装置の製造方法及び加工装置

Publications (3)

Publication Number Publication Date
JP2000117616A JP2000117616A (ja) 2000-04-25
JP2000117616A5 true JP2000117616A5 (enExample) 2004-09-30
JP3770752B2 JP3770752B2 (ja) 2006-04-26

Family

ID=26442174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10127699A Expired - Fee Related JP3770752B2 (ja) 1998-08-11 1999-04-08 半導体装置の製造方法及び加工装置

Country Status (4)

Country Link
US (1) US6612912B2 (enExample)
JP (1) JP3770752B2 (enExample)
KR (1) KR100574323B1 (enExample)
TW (1) TW429462B (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6322427B1 (en) * 1999-04-30 2001-11-27 Applied Materials, Inc. Conditioning fixed abrasive articles
US6800020B1 (en) * 2000-10-02 2004-10-05 Lam Research Corporation Web-style pad conditioning system and methods for implementing the same
DE10195157B4 (de) * 2000-11-29 2010-08-26 Qimonda Ag Reinigungsvorrichtung zum Reinigen von für das Polieren von Halbleiterwafern verwendeten Poliertüchern
KR100905266B1 (ko) * 2000-12-01 2009-06-29 도요 고무 고교 가부시키가이샤 연마 패드
DE10314212B4 (de) * 2002-03-29 2010-06-02 Hoya Corp. Verfahren zur Herstellung eines Maskenrohlings, Verfahren zur Herstellung einer Transfermaske
US6910951B2 (en) * 2003-02-24 2005-06-28 Dow Global Technologies, Inc. Materials and methods for chemical-mechanical planarization
US9110456B2 (en) * 2004-09-08 2015-08-18 Abb Research Ltd. Robotic machining with a flexible manipulator
US20070087672A1 (en) * 2005-10-19 2007-04-19 Tbw Industries, Inc. Apertured conditioning brush for chemical mechanical planarization systems
US8142261B1 (en) 2006-11-27 2012-03-27 Chien-Min Sung Methods for enhancing chemical mechanical polishing pad processes
US7749050B2 (en) * 2006-02-06 2010-07-06 Chien-Min Sung Pad conditioner dresser
US7658187B2 (en) * 2007-01-16 2010-02-09 John Budiac Adjustable stone cutting guide system
US20090127231A1 (en) * 2007-11-08 2009-05-21 Chien-Min Sung Methods of Forming Superhard Cutters and Superhard Cutters Formed Thereby
US8210904B2 (en) * 2008-04-29 2012-07-03 International Business Machines Corporation Slurryless mechanical planarization for substrate reclamation
JP6113015B2 (ja) * 2013-07-24 2017-04-12 株式会社ディスコ 割れ厚さ検出装置
JP6243255B2 (ja) * 2014-02-25 2017-12-06 光洋機械工業株式会社 ワークの平面研削方法
CN104369104A (zh) * 2014-09-17 2015-02-25 浙江舜宇光学有限公司 一种可在线修锐金刚石丸片的装置、研磨机及其使用方法
CN104505337B (zh) * 2014-12-23 2017-05-17 无锡中微高科电子有限公司 一种不规则晶圆的减薄方法
CN108721677B (zh) 2017-04-17 2021-11-19 广西美丽肤医疗器械有限公司 复合性材料
US11923208B2 (en) * 2017-05-19 2024-03-05 Illinois Tool Works Inc. Methods and apparatuses for chemical delivery for brush conditioning
KR102674027B1 (ko) * 2019-01-29 2024-06-12 삼성전자주식회사 재생 연마패드
CN113953909A (zh) * 2020-08-27 2022-01-21 薛震宇 一种建筑板材回收处理装置
CN112025547B (zh) * 2020-09-15 2021-11-02 泉芯集成电路制造(济南)有限公司 激光投影虚拟校正设备和方法
CN112476243A (zh) * 2020-11-26 2021-03-12 华虹半导体(无锡)有限公司 化学机械研磨装置及化学机械研磨工艺研磨垫清洗装置
CN112892809B (zh) * 2021-02-05 2023-01-24 惠州大唐伟业电子有限公司 一种光学玻璃的超声加工装置
CN113858034B (zh) * 2021-09-18 2023-06-30 长江存储科技有限责任公司 抛光装置、抛光装置的检测方法和抛光系统
CN116936344B (zh) * 2023-07-24 2025-08-26 江苏邑文微电子科技有限公司 一种半导体材料的减薄抛光方法及减薄抛光装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58184727A (ja) * 1982-04-23 1983-10-28 Disco Abrasive Sys Ltd シリコンウェ−ハの面を研削する方法
US5384986A (en) * 1992-09-24 1995-01-31 Ebara Corporation Polishing apparatus
JPH07249601A (ja) 1994-03-10 1995-09-26 Hitachi Ltd 研削装置
JPH08168953A (ja) * 1994-12-16 1996-07-02 Ebara Corp ドレッシング装置
JPH0929630A (ja) * 1995-07-19 1997-02-04 Tokyo Seimitsu Co Ltd 表面研削方法
US6180020B1 (en) 1995-09-13 2001-01-30 Hitachi, Ltd. Polishing method and apparatus
US5785585A (en) * 1995-09-18 1998-07-28 International Business Machines Corporation Polish pad conditioner with radial compensation
US5624303A (en) 1996-01-22 1997-04-29 Micron Technology, Inc. Polishing pad and a method for making a polishing pad with covalently bonded particles
JP3111892B2 (ja) 1996-03-19 2000-11-27 ヤマハ株式会社 研磨装置
US6227954B1 (en) 1996-04-26 2001-05-08 Ebara Corporation Polishing apparatus
KR100293863B1 (ko) * 1996-09-30 2001-09-17 아키오 하라 초지립공구와그제조방법
US5782675A (en) 1996-10-21 1998-07-21 Micron Technology, Inc. Apparatus and method for refurbishing fixed-abrasive polishing pads used in chemical-mechanical planarization of semiconductor wafers
JPH10128654A (ja) 1996-10-31 1998-05-19 Toshiba Corp Cmp装置及び該cmp装置に用いることのできる研磨布
DE69738012T2 (de) * 1996-11-26 2007-12-13 Matsushita Electric Industrial Co., Ltd., Kadoma Halbleitervorrichtung und deren Herstellungsverfahren
JP3722591B2 (ja) * 1997-05-30 2005-11-30 株式会社日立製作所 研磨装置
JP2845238B1 (ja) 1997-08-29 1999-01-13 日本電気株式会社 平面研磨装置
US5827112A (en) * 1997-12-15 1998-10-27 Micron Technology, Inc. Method and apparatus for grinding wafers
US6113462A (en) * 1997-12-18 2000-09-05 Advanced Micro Devices, Inc. Feedback loop for selective conditioning of chemical mechanical polishing pad
WO1999055493A1 (en) 1998-04-28 1999-11-04 Ebara Corporation Polishing grinding wheel and substrate polishing method with this grinding wheel

Similar Documents

Publication Publication Date Title
JP2000117616A5 (enExample)
JP3770752B2 (ja) 半導体装置の製造方法及び加工装置
US9399274B2 (en) Wafer polishing method
TWI333259B (en) Edge removal of silicon-on-insulator transfer wafer
JPH10329007A (ja) 化学的機械研磨装置
JP2001129755A (ja) 研磨装置及びドレッシング方法
JP6850099B2 (ja) 半導体装置の製造方法及び半導体製造装置
JPH09267257A (ja) ウェハ研磨装置
GB2329601A (en) Methods and apparatus for the chemical mechanical planarization of electronic devices
US6420265B1 (en) Method for polishing semiconductor device
TW201922424A (zh) 化學機械研磨設備及其操作方法
JP2004090142A (ja) 研磨布用ドレッシング装置及び研磨布のドレッシング方法並びにワークの研磨方法
JP2011103379A (ja) ウェーハの平坦化加工方法
JPH09277163A (ja) 研磨方法と研磨装置
CN118366915B (zh) 一种改善晶圆单面抛光后表面形貌及表面平整度的方法
JP2003282506A (ja) 基板の研磨装置及びコンディショニング方法
JP2005005315A (ja) ウエーハの研磨方法
JP2001110763A5 (enExample)
JP2004140130A (ja) 半導体基板研磨用パッドと研磨方法
JP2005335016A (ja) 研磨布用ドレッシングプレート及び研磨布のドレッシング方法並びにワークの研磨方法
JP2005033139A (ja) 半導体ウェーハ研磨用のウェーハ保持板
JP2000343406A5 (enExample)
JP2015069683A5 (enExample)
JPH08192353A (ja) 半導体ウェーハの研磨装置およびその製造方法
TW467804B (en) Multi-zone polishing pad conditioning device and method for CMP system