JP3770752B2 - 半導体装置の製造方法及び加工装置 - Google Patents

半導体装置の製造方法及び加工装置 Download PDF

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Publication number
JP3770752B2
JP3770752B2 JP10127699A JP10127699A JP3770752B2 JP 3770752 B2 JP3770752 B2 JP 3770752B2 JP 10127699 A JP10127699 A JP 10127699A JP 10127699 A JP10127699 A JP 10127699A JP 3770752 B2 JP3770752 B2 JP 3770752B2
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JP
Japan
Prior art keywords
grindstone
polishing
abrasive grains
brush
processing
Prior art date
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Expired - Fee Related
Application number
JP10127699A
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English (en)
Japanese (ja)
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JP2000117616A5 (enExample
JP2000117616A (ja
Inventor
感 安井
創一 片桐
茂夫 森山
喜雄 河村
亮成 河合
雅彦 佐藤
貞之 西村
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Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10127699A priority Critical patent/JP3770752B2/ja
Priority to TW088106656A priority patent/TW429462B/zh
Priority to US09/371,003 priority patent/US6612912B2/en
Priority to KR1019990032722A priority patent/KR100574323B1/ko
Publication of JP2000117616A publication Critical patent/JP2000117616A/ja
Publication of JP2000117616A5 publication Critical patent/JP2000117616A5/ja
Application granted granted Critical
Publication of JP3770752B2 publication Critical patent/JP3770752B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B24B1/04—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes subjecting the grinding or polishing tools, the abrading or polishing medium or work to vibration, e.g. grinding with ultrasonic frequency
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/12—Dressing tools; Holders therefor

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
JP10127699A 1998-08-11 1999-04-08 半導体装置の製造方法及び加工装置 Expired - Fee Related JP3770752B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP10127699A JP3770752B2 (ja) 1998-08-11 1999-04-08 半導体装置の製造方法及び加工装置
TW088106656A TW429462B (en) 1998-08-11 1999-04-26 Manufacturing method and processing device for semiconductor device
US09/371,003 US6612912B2 (en) 1998-08-11 1999-08-10 Method for fabricating semiconductor device and processing apparatus for processing semiconductor device
KR1019990032722A KR100574323B1 (ko) 1998-08-11 1999-08-10 반도체장치의 제조방법 및 가공장치

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP22687298 1998-08-11
JP10-226872 1998-08-11
JP10127699A JP3770752B2 (ja) 1998-08-11 1999-04-08 半導体装置の製造方法及び加工装置

Publications (3)

Publication Number Publication Date
JP2000117616A JP2000117616A (ja) 2000-04-25
JP2000117616A5 JP2000117616A5 (enExample) 2004-09-30
JP3770752B2 true JP3770752B2 (ja) 2006-04-26

Family

ID=26442174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10127699A Expired - Fee Related JP3770752B2 (ja) 1998-08-11 1999-04-08 半導体装置の製造方法及び加工装置

Country Status (4)

Country Link
US (1) US6612912B2 (enExample)
JP (1) JP3770752B2 (enExample)
KR (1) KR100574323B1 (enExample)
TW (1) TW429462B (enExample)

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US6322427B1 (en) * 1999-04-30 2001-11-27 Applied Materials, Inc. Conditioning fixed abrasive articles
US6800020B1 (en) * 2000-10-02 2004-10-05 Lam Research Corporation Web-style pad conditioning system and methods for implementing the same
DE10195157B4 (de) * 2000-11-29 2010-08-26 Qimonda Ag Reinigungsvorrichtung zum Reinigen von für das Polieren von Halbleiterwafern verwendeten Poliertüchern
KR100905266B1 (ko) * 2000-12-01 2009-06-29 도요 고무 고교 가부시키가이샤 연마 패드
DE10314212B4 (de) * 2002-03-29 2010-06-02 Hoya Corp. Verfahren zur Herstellung eines Maskenrohlings, Verfahren zur Herstellung einer Transfermaske
US6910951B2 (en) * 2003-02-24 2005-06-28 Dow Global Technologies, Inc. Materials and methods for chemical-mechanical planarization
US9110456B2 (en) * 2004-09-08 2015-08-18 Abb Research Ltd. Robotic machining with a flexible manipulator
US20070087672A1 (en) * 2005-10-19 2007-04-19 Tbw Industries, Inc. Apertured conditioning brush for chemical mechanical planarization systems
US8142261B1 (en) 2006-11-27 2012-03-27 Chien-Min Sung Methods for enhancing chemical mechanical polishing pad processes
US7749050B2 (en) * 2006-02-06 2010-07-06 Chien-Min Sung Pad conditioner dresser
US7658187B2 (en) * 2007-01-16 2010-02-09 John Budiac Adjustable stone cutting guide system
US20090127231A1 (en) * 2007-11-08 2009-05-21 Chien-Min Sung Methods of Forming Superhard Cutters and Superhard Cutters Formed Thereby
US8210904B2 (en) * 2008-04-29 2012-07-03 International Business Machines Corporation Slurryless mechanical planarization for substrate reclamation
JP6113015B2 (ja) * 2013-07-24 2017-04-12 株式会社ディスコ 割れ厚さ検出装置
JP6243255B2 (ja) * 2014-02-25 2017-12-06 光洋機械工業株式会社 ワークの平面研削方法
CN104369104A (zh) * 2014-09-17 2015-02-25 浙江舜宇光学有限公司 一种可在线修锐金刚石丸片的装置、研磨机及其使用方法
CN104505337B (zh) * 2014-12-23 2017-05-17 无锡中微高科电子有限公司 一种不规则晶圆的减薄方法
CN108721677B (zh) 2017-04-17 2021-11-19 广西美丽肤医疗器械有限公司 复合性材料
US11923208B2 (en) * 2017-05-19 2024-03-05 Illinois Tool Works Inc. Methods and apparatuses for chemical delivery for brush conditioning
KR102674027B1 (ko) * 2019-01-29 2024-06-12 삼성전자주식회사 재생 연마패드
CN113953909A (zh) * 2020-08-27 2022-01-21 薛震宇 一种建筑板材回收处理装置
CN112025547B (zh) * 2020-09-15 2021-11-02 泉芯集成电路制造(济南)有限公司 激光投影虚拟校正设备和方法
CN112476243A (zh) * 2020-11-26 2021-03-12 华虹半导体(无锡)有限公司 化学机械研磨装置及化学机械研磨工艺研磨垫清洗装置
CN112892809B (zh) * 2021-02-05 2023-01-24 惠州大唐伟业电子有限公司 一种光学玻璃的超声加工装置
CN113858034B (zh) * 2021-09-18 2023-06-30 长江存储科技有限责任公司 抛光装置、抛光装置的检测方法和抛光系统
CN116936344B (zh) * 2023-07-24 2025-08-26 江苏邑文微电子科技有限公司 一种半导体材料的减薄抛光方法及减薄抛光装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58184727A (ja) * 1982-04-23 1983-10-28 Disco Abrasive Sys Ltd シリコンウェ−ハの面を研削する方法
US5384986A (en) * 1992-09-24 1995-01-31 Ebara Corporation Polishing apparatus
JPH07249601A (ja) 1994-03-10 1995-09-26 Hitachi Ltd 研削装置
JPH08168953A (ja) * 1994-12-16 1996-07-02 Ebara Corp ドレッシング装置
JPH0929630A (ja) * 1995-07-19 1997-02-04 Tokyo Seimitsu Co Ltd 表面研削方法
US6180020B1 (en) 1995-09-13 2001-01-30 Hitachi, Ltd. Polishing method and apparatus
US5785585A (en) * 1995-09-18 1998-07-28 International Business Machines Corporation Polish pad conditioner with radial compensation
US5624303A (en) 1996-01-22 1997-04-29 Micron Technology, Inc. Polishing pad and a method for making a polishing pad with covalently bonded particles
JP3111892B2 (ja) 1996-03-19 2000-11-27 ヤマハ株式会社 研磨装置
US6227954B1 (en) 1996-04-26 2001-05-08 Ebara Corporation Polishing apparatus
KR100293863B1 (ko) * 1996-09-30 2001-09-17 아키오 하라 초지립공구와그제조방법
US5782675A (en) 1996-10-21 1998-07-21 Micron Technology, Inc. Apparatus and method for refurbishing fixed-abrasive polishing pads used in chemical-mechanical planarization of semiconductor wafers
JPH10128654A (ja) 1996-10-31 1998-05-19 Toshiba Corp Ｃｍｐ装置及び該ｃｍｐ装置に用いることのできる研磨布
DE69738012T2 (de) * 1996-11-26 2007-12-13 Matsushita Electric Industrial Co., Ltd., Kadoma Halbleitervorrichtung und deren Herstellungsverfahren
JP3722591B2 (ja) * 1997-05-30 2005-11-30 株式会社日立製作所 研磨装置
JP2845238B1 (ja) 1997-08-29 1999-01-13 日本電気株式会社 平面研磨装置
US5827112A (en) * 1997-12-15 1998-10-27 Micron Technology, Inc. Method and apparatus for grinding wafers
US6113462A (en) * 1997-12-18 2000-09-05 Advanced Micro Devices, Inc. Feedback loop for selective conditioning of chemical mechanical polishing pad
WO1999055493A1 (en) 1998-04-28 1999-11-04 Ebara Corporation Polishing grinding wheel and substrate polishing method with this grinding wheel

Also Published As

Publication number Publication date
KR20000017219A (ko) 2000-03-25
TW429462B (en) 2001-04-11
US6612912B2 (en) 2003-09-02
JP2000117616A (ja) 2000-04-25
KR100574323B1 (ko) 2006-04-26
US20020119733A1 (en) 2002-08-29

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