JP2000106455A5 - - Google Patents
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- JP2000106455A5 JP2000106455A5 JP1999216110A JP21611099A JP2000106455A5 JP 2000106455 A5 JP2000106455 A5 JP 2000106455A5 JP 1999216110 A JP1999216110 A JP 1999216110A JP 21611099 A JP21611099 A JP 21611099A JP 2000106455 A5 JP2000106455 A5 JP 2000106455A5
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- nitride semiconductor
- groove
- substrate
- film
- growth
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- 239000004065 semiconductor Substances 0.000 description 21
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 description 20
- 239000000758 substrate Substances 0.000 description 10
- 229910002601 GaN Inorganic materials 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- -1 nitride compound Chemical class 0.000 description 1
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Description
【請求項7】
少なくとも前記基板の成長面は窒化物半導体からなり、前記溝は、前記窒化物半導体に対
して<11−20>方向に沿って設けられていることを特徴とする請求項2乃至4のいず
れかに記載の窒化物半導体構造。7.
According to
本発明に係る窒化物半導体構造は、前記基板が窒化物半導体基板を有し、前記窒化物半導体基板は、<11−20>方向に沿って溝が設けられていることを特徴とする。本発明の窒化物半導体構造は、少なくとも前記基板の成長面は窒化物半導体からなり、前記溝は、前記窒化物半導体に対して<1−100>方向に沿って設けられることを特徴とする。また、本発明の窒化物半導体構造は、前記溝の底部の窒化物半導体が多結晶であることを特徴とする。The nitride semiconductor structure according to the present invention is characterized in that the substrate has a nitride semiconductor substrate, and the nitride semiconductor substrate is provided with grooves along the <1 1-20> direction. .. The nitride semiconductor structure of the present invention is characterized in that at least the growth surface of the substrate is made of a nitride semiconductor, and the groove is provided along the <1-100> direction with respect to the nitride semiconductor. Further, the nitride semiconductor structure of the present invention is characterized in that the nitride semiconductor at the bottom of the groove is polycrystalline.
また、サファイア基板C面上にエピタキシャル成長した窒化物半導体であるGaNの配向関係は、(0001)sapphire//(0001)GaN、[1−210]sapphire//[−1010]GaNであることが知られており、結局、サファイア基板に対して[11−20]方向に溝部を形成することは、GaNに関しては[1−100]方向に溝部110を形成したことになる。従って、本実施の形態1の溝部は、基板の劈開方向かつ基板直上に結晶成長した窒化物半導体の<1−100>方向に沿って形成されていることになる。Further, the GaN orientation relationship is nitride compound semiconductor epitaxially grown on a sapphire substrate C plane, (0001) sapphire // (0001 ) GaN, [1-210] sapphire // [- 1010] It is GaN is known In the end, forming a groove in the [11-20] direction with respect to the sapphire substrate means forming a groove 110 in the [1-100] direction with respect to GaN. Therefore, the groove portion of the first embodiment is formed in the cleavage direction of the substrate and along the <1-100> direction of the nitride semiconductor crystal-grown directly above the substrate.
また、従来例では選択成長によるマスクパターンが窒化物半導体の成長中に熱的損傷を受け、マスクパターンの構成要素が不純物として窒化物半導体成長膜内に影響をもたらしていた。しかしながら、本実施の形態で作製された成長膜層内には上記の不純物となる構成要素は一切含まれておらず、窒化物半導体成長膜のフォトルミネッセンス(PL)測定によれば、窒化物半導体成長膜(GaN単膜)のバンド端付近の発光強度と不純物によるディープレベルからの発光強度との相対比を比較したところ、本実施の形態で得られた相対強度比はマスクパターンを利用したそれと比べて1桁以上改善されていた。これは、本実施の形態で得られた窒化物半導体の成長膜が非常に高品質であることを示している。Further, in the conventional example, the mask pattern due to selective growth is thermally damaged during the growth of the nitride semiconductor, and the constituent elements of the mask pattern affect the inside of the nitride semiconductor growth film as impurities. However, the growth film layer produced in the present embodiment does not contain any of the above-mentioned components that are impurities, and according to the photoluminescence (PL) measurement of the nitride semiconductor growth film, the nitride semiconductor When the relative ratios of the emission intensity near the band edge of the growth film (GaN single film) and the emission intensity from the deep level due to impurities were compared, the relative intensity ratio obtained in this embodiment was that of using the mask pattern. It was improved by more than an order of magnitude in comparison. This indicates that the growth film of the nitride semiconductor obtained in the present embodiment is of very high quality.
(実施の形態10)図6は、本実施の形態10によって作製されたLD素子構造を示している。本実施の形態では、実施形態2で作製されたn型GaN膜付き加工構造基板200直上に、MOCVD装置を用いて発光素子構造としてLD素子構造を作製した例である。6 (Embodiment 10) shows the LD device structure made by the tenth embodiment. In this embodiment, an LD element structure is produced as a light emitting element structure using a MOCVD apparatus directly on the processed structure substrate 200 with an n-type GaN film produced in the second embodiment.
(実施の形態11)図7は、本実施の形態11によって作製された発光素子構造としてLED素子構造を示す。本実施の形態では、上記実施の形態で作製された窒化物半導体構造上に、MBE装置を用いてLED素子構造を作製した例について説明する。 (Embodiment 11) FIG. 7 shows an LED element structure as a light emitting element structure produced by the present embodiment 11. In this embodiment, an example in which an LED element structure is manufactured by using an MBE device on the nitride semiconductor structure manufactured in the above embodiment will be described.
窒化物半導体膜上に形成された溝部の深さhが溝部の幅bに対してh≧bであるときは、溝部が十分に深く原料ガスが溝部の底部まで到達しないために、溝部が埋没することなく空洞部が形成される。従って、十分に溝の深さが深い場合は本実施の形態12ではなく、例えば実施の形態2または3と同様に空洞部が形成される。When the depth h of the groove formed in the nitride semiconductor film on is h ≧ b the width b of the groove, since the groove does not reach the bottom of deep enough material gas groove, the groove A cavity is formed without being buried. Therefore, when the groove depth is sufficiently deep, a cavity is formed instead of the 12th embodiment, for example, as in the 2nd or 3rd embodiment.
窒化物半導体膜上に形成された溝部の深さhが溝部の幅bに対してh≧bであるときは、溝部が十分に深く原料ガスが溝部の底部まで到達しないために、溝部が埋没することなく空洞部が形成される。When the depth h of the groove formed in the nitride semiconductor film on is h ≧ b the width b of the groove, since the groove does not reach the bottom of deep enough material gas groove, the groove A cavity is formed without being buried.
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JP21611099A JP3987660B2 (en) | 1998-07-31 | 1999-07-30 | Nitride semiconductor structure, manufacturing method thereof, and light emitting device |
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JP21611099A JP3987660B2 (en) | 1998-07-31 | 1999-07-30 | Nitride semiconductor structure, manufacturing method thereof, and light emitting device |
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JP2006220096A Division JP3950471B2 (en) | 1998-07-31 | 2006-08-11 | Nitride semiconductor structure, manufacturing method thereof, and light emitting device |
JP2007015304A Division JP4016062B2 (en) | 1998-07-31 | 2007-01-25 | Nitride semiconductor structure, manufacturing method thereof, and light emitting device |
JP2007015305A Division JP5080820B2 (en) | 1998-07-31 | 2007-01-25 | Nitride semiconductor structure, manufacturing method thereof, and light emitting device |
JP2007017441A Division JP3987879B2 (en) | 1998-07-31 | 2007-01-29 | Nitride semiconductor light emitting device and manufacturing method thereof |
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