JP2000077549A5 - - Google Patents
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- Publication number
- JP2000077549A5 JP2000077549A5 JP1998249504A JP24950498A JP2000077549A5 JP 2000077549 A5 JP2000077549 A5 JP 2000077549A5 JP 1998249504 A JP1998249504 A JP 1998249504A JP 24950498 A JP24950498 A JP 24950498A JP 2000077549 A5 JP2000077549 A5 JP 2000077549A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gate electrode
- semiconductor device
- forming
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 54
- 239000012535 impurity Substances 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 230000005669 field effect Effects 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims 7
- 239000002184 metal Substances 0.000 claims 4
- 229910021332 silicide Inorganic materials 0.000 claims 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 2
- 238000002955 isolation Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 description 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24950498A JP4397061B2 (ja) | 1998-09-03 | 1998-09-03 | 半導体装置の製造方法 |
| US09/257,507 US6281060B1 (en) | 1998-09-03 | 1999-02-25 | Method of manufacturing a semiconductor device containing a BiCMOS circuit |
| US09/866,849 US6426533B2 (en) | 1998-09-03 | 2001-05-30 | Semiconductor device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24950498A JP4397061B2 (ja) | 1998-09-03 | 1998-09-03 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000077549A JP2000077549A (ja) | 2000-03-14 |
| JP2000077549A5 true JP2000077549A5 (enExample) | 2005-11-04 |
| JP4397061B2 JP4397061B2 (ja) | 2010-01-13 |
Family
ID=17193958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24950498A Expired - Fee Related JP4397061B2 (ja) | 1998-09-03 | 1998-09-03 | 半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US6281060B1 (enExample) |
| JP (1) | JP4397061B2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6352887B1 (en) * | 1998-03-26 | 2002-03-05 | Texas Instruments Incorporated | Merged bipolar and CMOS circuit and method |
| JP2002368146A (ja) * | 2001-06-13 | 2002-12-20 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| US6602747B1 (en) * | 2002-06-26 | 2003-08-05 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for fabricating bipolar complementary metal oxide semiconductor (BiCMOS) device structure |
| US8993393B2 (en) * | 2010-02-11 | 2015-03-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multiple silicide integration structure and method |
| TWI408807B (zh) * | 2011-05-05 | 2013-09-11 | Winbond Electronics Corp | 半導體元件及其製造方法 |
| US8975130B2 (en) | 2013-06-28 | 2015-03-10 | Globalfoundries Inc. | Methods of forming bipolar devices and an integrated circuit product containing such bipolar devices |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5354699A (en) | 1987-05-13 | 1994-10-11 | Hitachi, Ltd. | Method of manufacturing semiconductor integrated circuit device |
| KR0120196B1 (ko) * | 1987-05-13 | 1997-10-17 | 미다 가쓰시게 | 반도체 집적회로장치 및 그 제조방법 |
| JPS63281456A (ja) | 1987-05-13 | 1988-11-17 | Hitachi Ltd | 半導体集積回路装置及びその製造方法 |
| JPH0348457A (ja) * | 1989-04-14 | 1991-03-01 | Toshiba Corp | 半導体装置およびその製造方法 |
| KR940018967A (ko) * | 1993-01-30 | 1994-08-19 | 오가 노리오 | 반도체장치 및 그 제조방법 |
| JP3444002B2 (ja) * | 1995-02-14 | 2003-09-08 | ソニー株式会社 | 半導体装置およびその製造方法 |
| JP3329640B2 (ja) * | 1995-10-10 | 2002-09-30 | 株式会社東芝 | 半導体装置の製造方法 |
| JP3058067B2 (ja) * | 1995-11-06 | 2000-07-04 | 日本電気株式会社 | 半導体装置の製造方法 |
-
1998
- 1998-09-03 JP JP24950498A patent/JP4397061B2/ja not_active Expired - Fee Related
-
1999
- 1999-02-25 US US09/257,507 patent/US6281060B1/en not_active Expired - Lifetime
-
2001
- 2001-05-30 US US09/866,849 patent/US6426533B2/en not_active Expired - Fee Related
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