JP2000046645A - 光電変換装置及びその製造方法及びｘ線撮像装置 - Google Patents

光電変換装置及びその製造方法及びｘ線撮像装置

Info

Publication number
JP2000046645A
JP2000046645A JP10217782A JP21778298A JP2000046645A JP 2000046645 A JP2000046645 A JP 2000046645A JP 10217782 A JP10217782 A JP 10217782A JP 21778298 A JP21778298 A JP 21778298A JP 2000046645 A JP2000046645 A JP 2000046645A
Authority
JP
Japan
Prior art keywords
photoelectric conversion
signal
wiring
matrix
conversion device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10217782A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000046645A5 (https=
Inventor
Tadao Endo
忠夫 遠藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP10217782A priority Critical patent/JP2000046645A/ja
Priority to US09/363,029 priority patent/US6642494B1/en
Publication of JP2000046645A publication Critical patent/JP2000046645A/ja
Publication of JP2000046645A5 publication Critical patent/JP2000046645A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/30—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from X-rays
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Measurement Of Radiation (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
JP10217782A 1998-07-31 1998-07-31 光電変換装置及びその製造方法及びｘ線撮像装置 Pending JP2000046645A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10217782A JP2000046645A (ja) 1998-07-31 1998-07-31 光電変換装置及びその製造方法及びｘ線撮像装置
US09/363,029 US6642494B1 (en) 1998-07-31 1999-07-29 Photoelectric conversion apparatus, production method thereof, and information processing apparatus having the photoelectric conversion apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10217782A JP2000046645A (ja) 1998-07-31 1998-07-31 光電変換装置及びその製造方法及びｘ線撮像装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007081682A Division JP2007288777A (ja) 2007-03-27 2007-03-27 光電変換装置及びその製造方法並びにｘ線撮像装置

Publications (2)

Publication Number Publication Date
JP2000046645A true JP2000046645A (ja) 2000-02-18
JP2000046645A5 JP2000046645A5 (https=) 2005-10-27

Family

ID=16709654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10217782A Pending JP2000046645A (ja) 1998-07-31 1998-07-31 光電変換装置及びその製造方法及びｘ線撮像装置

Country Status (2)

Country Link
US (1) US6642494B1 (https=)
JP (1) JP2000046645A (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009031581A1 (ja) * 2007-09-04 2009-03-12 Hamamatsu Photonics K.K. 固体撮像装置
WO2009031585A1 (ja) * 2007-09-05 2009-03-12 Hamamatsu Photonics K. K. 固体撮像装置
WO2012098801A1 (ja) 2011-01-17 2012-07-26 浜松ホトニクス株式会社 固体撮像装置
US8547464B2 (en) 2008-01-24 2013-10-01 Hamamatsu Photonics K.K. Solid-state imaging device and frame data correcting method which determine a voltage value corresponding to a pixel portion in frame data
US8625741B2 (en) 2008-07-17 2014-01-07 Hamamatsu Photonics K.K. Solid-state image pickup device
WO2014199840A1 (ja) 2013-06-11 2014-12-18 浜松ホトニクス株式会社 固体撮像装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6795367B1 (en) * 2000-05-16 2004-09-21 Micron Technology, Inc. Layout technique for address signal lines in decoders including stitched blocks
US7138696B2 (en) 2001-10-19 2006-11-21 Canon Kabushiki Kaisha Image pickup apparatus, radiation image pickup apparatus and radiation image pickup system
US6903670B1 (en) * 2002-10-04 2005-06-07 Smal Camera Technologies Circuit and method for cancellation of column pattern noise in CMOS imagers
JP2004336469A (ja) * 2003-05-08 2004-11-25 Fuji Film Microdevices Co Ltd 固体撮像素子、撮像装置、及び画像処理方法
US7923674B2 (en) * 2005-06-29 2011-04-12 National University Corporation NARA Institute of Science and Technology Solid-state image sensor having a voltage applier and signal readout method thereof
US7944020B1 (en) 2006-12-22 2011-05-17 Cypress Semiconductor Corporation Reverse MIM capacitor
FR3119707A1 (fr) * 2021-02-08 2022-08-12 Trixell Détecteur numérique à intégration numérique de charges
JP2024017481A (ja) * 2022-07-28 2024-02-08 キヤノンメディカルシステムズ株式会社 Ｘ線ｃｔ装置、データ収集システム、データ収集方法、及びプログラム

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995017768A1 (en) * 1993-12-20 1995-06-29 General Electronic Company Address line repair structure and method for thin film imager devices
US5552607A (en) * 1995-06-21 1996-09-03 General Electric Company Imager device with integral address line repair segments
JP3183390B2 (ja) * 1995-09-05 2001-07-09 キヤノン株式会社 光電変換装置及びそれを用いた撮像装置
JPH0998970A (ja) * 1995-10-06 1997-04-15 Canon Inc Ｘ線撮像装置

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8159576B2 (en) 2007-09-04 2012-04-17 Hamamatsu Photonics K.K. Solid state imaging device
KR101428135B1 (ko) 2007-09-04 2014-08-07 하마마츠 포토닉스 가부시키가이샤 고체 촬상 장치
JP2009065272A (ja) * 2007-09-04 2009-03-26 Hamamatsu Photonics Kk 固体撮像装置
WO2009031581A1 (ja) * 2007-09-04 2009-03-12 Hamamatsu Photonics K.K. 固体撮像装置
JP2009065375A (ja) * 2007-09-05 2009-03-26 Hamamatsu Photonics Kk 固体撮像装置
US8189084B2 (en) 2007-09-05 2012-05-29 Hamamatsu Photonics K.K. Solid state imaging device
WO2009031585A1 (ja) * 2007-09-05 2009-03-12 Hamamatsu Photonics K. K. 固体撮像装置
US8547464B2 (en) 2008-01-24 2013-10-01 Hamamatsu Photonics K.K. Solid-state imaging device and frame data correcting method which determine a voltage value corresponding to a pixel portion in frame data
US8625741B2 (en) 2008-07-17 2014-01-07 Hamamatsu Photonics K.K. Solid-state image pickup device
WO2012098801A1 (ja) 2011-01-17 2012-07-26 浜松ホトニクス株式会社 固体撮像装置
US9049394B2 (en) 2011-01-17 2015-06-02 Hamamatsu Photonics K.K. Solid imaging device
WO2014199840A1 (ja) 2013-06-11 2014-12-18 浜松ホトニクス株式会社 固体撮像装置
KR20160019069A (ko) 2013-06-11 2016-02-18 하마마츠 포토닉스 가부시키가이샤 고체 촬상 장치
US9571766B2 (en) 2013-06-11 2017-02-14 Hamamatsu Photonics K.K. Solid-state imaging device

Also Published As

Publication number Publication date
US6642494B1 (en) 2003-11-04

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