WO2012098801A1 - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- WO2012098801A1 WO2012098801A1 PCT/JP2011/079537 JP2011079537W WO2012098801A1 WO 2012098801 A1 WO2012098801 A1 WO 2012098801A1 JP 2011079537 W JP2011079537 W JP 2011079537W WO 2012098801 A1 WO2012098801 A1 WO 2012098801A1
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- imaging device
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- 238000003384 imaging method Methods 0.000 title claims abstract description 87
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
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- H—ELECTRICITY
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/53—Control of the integration time
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- H—ELECTRICITY
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
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- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
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- H—ELECTRICITY
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
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- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
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- H—ELECTRICITY
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- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
Definitions
- the present invention relates to a solid-state imaging device.
- Patent Document 1 describes a photoelectric conversion device.
- This photoelectric conversion device includes a photoelectric conversion circuit unit in which a plurality of photoelectric conversion elements are arranged in a matrix, and a plurality of signal wirings for transferring a signal output from the photoelectric conversion circuit unit to a reading circuit.
- One end of each of the plurality of reset switches is connected to each of the plurality of signal wirings, and the other end of these reset switches is grounded.
- the charge of the photoelectric conversion element is reset through a plurality of signal wirings by setting the reset switch in a connected state.
- the solid-state imaging device has a light receiving unit in which a plurality of pixels are two-dimensionally arranged over a plurality of rows and a plurality of columns. Each pixel is provided with a photodiode for converting incident light into electrons. The photodiode of each pixel is connected to the readout wiring arranged for each column via a switch, and the charge accumulated in the photodiode is transferred to the readout wiring by setting the switch in a connected state. leak.
- a switch is constituted by a transistor.
- parasitic capacitance exists between the control terminal (base or gate) of the transistor and the current terminal (collector and emitter, or source and drain). Therefore, when the switch is connected (that is, when a predetermined voltage is applied to the control terminal of the transistor), charge is accumulated in the parasitic capacitance between the control terminal and the current terminal. Then, after the charge is taken out from the photodiode, the switch is disconnected (that is, when the application of the voltage to the control terminal of the transistor is stopped), the charge accumulated in the parasitic capacitance moves to the photodiode. As a result, a potential difference (offset) occurs between the photodiode electrode and the readout wiring.
- the switch is disconnected for a predetermined period, and the incident light is converted into electrons and the electric charge is accumulated in the photodiode (hereinafter referred to as accumulation period).
- accumulation period the photodiode
- the offset varies with time. For example, since the current terminals of the transistor are not completely insulated and a minute leak occurs, the above-described offset changes with time due to this leak.
- the offset fluctuates in time as described above, the amount of charge output from the photodiode fluctuates depending on the length of the set value of the accumulation period, which causes a decrease in incident light detection accuracy in each pixel.
- the present invention has been made in view of such problems, and an object of the present invention is to provide a solid-state imaging device capable of increasing the detection accuracy of incident light in each pixel.
- a solid-state imaging device includes M ⁇ N (M is an integer of 2 or more, N is 2 or more) each including a photodiode and a transistor having one end connected to the photodiode.
- Light-receiving section in which pixels of (integer integer) are two-dimensionally arranged in M rows and N columns, and N readout pixels arranged for each column and connected to the other ends of the transistors included in the pixels of the corresponding column N integration circuits that generate voltage values according to the amount of electric charges input through the wiring and the N readout wirings, and sequentially output the voltage values output from the N integration circuits.
- the potentials of the signal output unit to be output and the K readout wirings included in the N readout wirings are different from the input potentials of the corresponding K integration circuits.
- the potential changing means for switching to the potential and the voltage value at the signal output unit And a control unit that controls a potential switching operation in the potential changing means, and the control unit sequentially outputs a voltage value corresponding to the amount of charge generated in the M ⁇ N pixels from the signal output unit.
- the potential of the K readout wirings is switched to another potential for a predetermined period included after the readout period has elapsed and before the next readout period is started.
- This solid-state imaging device can operate, for example, as follows.
- the charges accumulated in the photodiodes of each pixel according to the intensity of light incident on the light receiving portion are sequentially output for each pixel in the readout period after the accumulation period ends. That is, for the pixels included in a certain row of the M rows, the charge accumulated in the photodiode of each pixel is read out to the readout wiring in the column via the transistor of the pixel.
- These charges are input to the integration circuit, converted into voltage values, and sequentially output from the signal output unit.
- Such an operation is sequentially repeated for the first row to the Mth row, so that a voltage value corresponding to the amount of charge accumulated in each of the M ⁇ N pixels is output for each pixel. Thereafter, after the next accumulation period, the readout period is started again.
- the control unit changes the potential of the readout wiring to a potential changing unit for a predetermined period included after the readout period has elapsed and until the next readout period is started (that is, within the accumulation period).
- this other potential may be set to a potential equivalent to (same as or close to) the electrode potential of the photodiode of each pixel.
- the detection accuracy of incident light in each pixel can be increased.
- FIG. 1 is a plan view showing a solid-state imaging device.
- FIG. 2 is an enlarged plan view of a part of the solid-state imaging device.
- FIG. 3 is a side sectional view showing a section taken along line II of FIG.
- FIG. 4 is a diagram illustrating an internal configuration of the solid-state imaging device.
- FIG. 5 is a diagram illustrating an example of a circuit configuration of each of the pixel, the integration circuit, and the holding circuit of the solid-state imaging device.
- FIG. 6 is a timing chart for explaining the operation of the solid-state imaging device according to the comparative example.
- FIG. 1 is a plan view showing a solid-state imaging device.
- FIG. 2 is an enlarged plan view of a part of the solid-state imaging device.
- FIG. 3 is a side sectional view showing a section taken along line II of FIG.
- FIG. 4 is a diagram illustrating an internal configuration of the solid-state imaging device.
- FIG. 5 is a diagram illustrating an example
- FIG. 7 is a diagram for explaining a problem in the comparative example, and shows a transistor and a photodiode of one pixel, an integration circuit, a column readout wiring, and a row selection wiring.
- FIG. 8 is a timing chart for explaining the operation of the solid-state imaging device.
- FIG. 9 is a diagram illustrating an internal configuration of the solid-state imaging device according to the first modification.
- FIG. 10 shows a configuration of a pixel, an integration circuit, a holding circuit, and their peripheral circuits in the solid-state imaging device of the first modification.
- FIG. 11 is a timing chart for explaining the operation of the solid-state imaging device according to the second modification.
- FIG. 12 is a timing chart for explaining the operation of the solid-state imaging device according to the third modification.
- the solid-state imaging device is used in, for example, a medical X-ray imaging system, and captures an X-ray image of a subject's jaw by an imaging mode such as panoramic imaging, cephalometric imaging, and CT imaging particularly in dentistry.
- the solid-state imaging device of this embodiment includes a thin film transistor in which polycrystalline silicon is deposited on a large-area glass substrate and a photodiode in which amorphous silicon is deposited, and is manufactured from a single crystal silicon wafer.
- the light receiving area is significantly wider.
- 1 to 3 are diagrams showing the configuration of the solid-state imaging device 10 according to the present embodiment.
- FIG. 1 is a plan view showing the solid-state imaging device 10
- FIG. 2 is an enlarged plan view of a part of the solid-state imaging device 10.
- FIG. 3 is a side sectional view showing a section taken along line II of FIG. 1 to 3 also show an XYZ orthogonal coordinate system for easy understanding.
- the solid-state imaging device 10 includes a glass substrate 12, and a light receiving unit 20 and a vertical shift register unit 30 manufactured on the main surface of the glass substrate 12.
- the vertical shift register unit 30 is disposed along the side of the light receiving unit 20.
- the solid-state imaging device 10 further includes a signal output unit 40 disposed outside the glass substrate 12.
- the signal output unit 40 is configured by a plurality of C-MOS type IC chips 41 electrically connected to the light receiving unit 20, for example.
- the signal output unit 40 includes N integration circuits provided in each of the N columns of the light receiving unit 20, and these N integration circuits are used for the charges output from the pixels in the first column to the Nth column. A voltage value corresponding to the amount is generated.
- the signal output unit 40 holds the voltage value output from each integrating circuit, and sequentially outputs the held voltage value.
- the light receiving unit 20 and the vertical shift register unit 30 may be provided on separate glass substrates 12, respectively. Further, the signal output unit 40 may be provided on the glass substrate 12 along with the light receiving unit 20 and the vertical shift register unit 30.
- the light receiving unit 20 is configured by two-dimensionally arranging M ⁇ N pixels in M rows and N columns.
- the pixel P m, n shown in FIG. 2 is a pixel located in the m-th row and the n-th column.
- m is an integer from 1 to M
- n is an integer from 1 to N.
- M and N are integers of 2 or more.
- the column direction coincides with the X-axis direction
- the row direction coincides with the Y-axis direction.
- Each of the plurality of pixels P 1,1 to P M, N included in the light receiving unit 20 includes a transistor 21 and a photodiode 22 as a readout switch.
- One current terminal of the transistor 21 is connected to the photodiode 22.
- the other current terminal of the transistor 21 is connected to a corresponding readout wiring (for example , in the case of the pixel P m, n , the n-th column readout wiring R n ).
- the control terminal of the transistor 21 is connected to a corresponding row selection wiring (for example , in the case of the pixel P m, n , the m-th row selection wiring Q m ).
- a polycrystalline silicon film 14 is provided on the entire surface of the glass substrate 12.
- Transistors 21, photodiodes 22, and the n-th column readout wiring R n are formed on the surface of the polycrystalline silicon film 14.
- Transistors 21, photodiodes 22, and the n-th column readout wiring R n is covered by the insulating layer 16, on the insulating layer 16 is a scintillator 18 is provided so as to cover the entire surface of the glass substrate 12.
- the scintillator 18 generates scintillation light according to the incident X-ray, converts the X-ray image into an optical image, and outputs the optical image to the light receiving unit 20.
- the n-th column readout wiring R n made of metal.
- the photodiode 22 generates an amount of electric charge corresponding to the incident light intensity, and accumulates the generated electric charge in the junction capacitor.
- the photodiode 22 is a PIN photodiode having an n-type semiconductor layer 22a, an i-type semiconductor layer 22b, and a p-type semiconductor layer 22c.
- the n-type semiconductor layer 22a is a semiconductor layer made of n-type polycrystalline silicon.
- the i-type semiconductor layer 22b is a semiconductor layer made of i-type (undoped) amorphous silicon, and is provided on the n-type semiconductor layer 22a.
- the i-type semiconductor layer 22b is formed of amorphous silicon, the i-type semiconductor layer 22b can be thickened, and the photoelectric conversion efficiency of the photodiode 22 is increased to improve the sensitivity of the solid-state imaging device 10. be able to.
- the p-type semiconductor layer 22c is a semiconductor layer made of p-type amorphous silicon, and is provided on the i-type semiconductor layer 22b.
- the transistor 21 is preferably configured by a field effect transistor (FET), but may be configured by a bipolar transistor.
- FET field effect transistor
- the control terminal means a gate
- the current terminal means a source or a drain.
- the transistor 21 shown in FIG. 3 has an FET configuration and includes a region made of polycrystalline silicon.
- the transistor 21 includes a channel region 21a, a source region 21b, and a drain region 21c each made of polycrystalline silicon.
- the source region 21b is formed along one side surface of the channel region 21a.
- the drain region 21c is formed along the other side surface of the channel region 21a.
- a gate electrode 21e is provided on the channel region 21a, and a gate insulating film 21d is interposed between the gate electrode 21e and the channel region 21a.
- the polycrystalline silicon constituting the channel region 21a, the source region 21b, and the drain region 21c of the transistor 21 is preferably low-temperature polycrystalline silicon (Low-Temperature-Polycrystalline Silicon: LTPS).
- Low temperature polycrystalline silicon is polycrystalline silicon deposited at relatively low process temperatures, such as 100-600 ° C. Under such a low temperature, for example, a glass substrate 12 such as non-alkali glass can be used as a support substrate.
- the glass substrate 12 is made of a plate-like (substrate) non-alkali glass having a thickness of 0.3 mm to 1.2 mm, for example.
- the alkali-free glass contains almost no alkali, has a low expansion coefficient, high heat resistance, and stable characteristics.
- the electron mobility in low-temperature polycrystalline silicon is 10 to 600 cm 2 / Vs, which is larger than the electron mobility (0.3 to 1.0 cm 2 / Vs) in amorphous silicon, so that the regions 21 a and 21 b of the transistor 21 and By forming 21c from low-temperature polycrystalline silicon, the on-resistance of the transistor 21 can be reduced.
- the pixel P m, n as shown in FIG. 3 is manufactured by the following process, for example.
- a film forming method for example, plasma CVD is suitable.
- a laser beam for example, excimer laser beam
- the polycrystalline silicon film 14 is formed.
- a SiO 2 film as a gate insulating film 21d is formed on a partial region of the polycrystalline silicon film 14, a gate electrode 21e is formed thereon.
- ions are implanted into the regions to be the source region 21b and the drain region 21c. Thereafter, patterning of the polycrystalline silicon film 14 is performed, and exposure and etching are repeatedly performed to form other electrodes and contact holes. Further, after ions are implanted into the region to be the pixel P m, n in the polycrystalline silicon film 14 to make it n-type, i-type and p-type amorphous silicon layers (that is, i-type semiconductor layer 22b and A p-type semiconductor layer 22c) is sequentially stacked to form a PIN photodiode 22. Thereafter, a passivation film to be the insulating layer 16 is formed.
- FIG. 4 is a diagram illustrating an internal configuration of the solid-state imaging device 10.
- the light receiving unit 20 includes M ⁇ N pixels P 1,1 to P M, N two-dimensionally arranged in M rows and N columns.
- the N pixels P m, 1 to P m, N in the m-th row are connected to the vertical shift register unit 30 via the m-th row selection wiring Q m .
- the vertical shift register unit 30 is included in the control unit 6.
- the signal output unit 40 has N integrating circuits 42 and N holding circuits 44 provided for each column.
- the integrating circuit 42 and the holding circuit 44 are connected to each other in series for each column.
- the N integration circuits 42 have a common configuration.
- the N holding circuits 44 have a common configuration.
- N potential change switches 50 are provided for each column.
- Each potential changing switch 50 constitutes a potential changing means in the present embodiment, the potential of the readout wiring line corresponding to the potential changing switch 50 of the readout wiring R 1 ⁇ R N, the input of the integration circuit 42 The potential is switched to a potential Vdr different from the potential.
- the potential Vdr is set to a constant potential equivalent to (same as or close to) the electrode potential of the photodiode 22 of each of the pixels P 1,1 to P M, N during the accumulation period.
- Each of the N potential change switches 50 is provided between the readout wiring provided in the column among the readout wirings R 1 to R N and the integration circuit 42 in the column. Each potential change switch 50 selectively connects the read wirings R 1 to R N to either the wiring 52 for supplying the potential Vdr or the integration circuit 42 in the column.
- the n-th column readout wiring R n is connected to the input terminal of the potential change switch 50 in the column.
- the potential changing switch 50 has two output terminals, one output terminal is connected to the integration circuit 42 of the column, and the other output terminal is connected to the wiring 52.
- the control terminal of each potential change switch 50 is connected via a single potential change wiring 54 provided in common to the N potential change switches 50. Connected to the control unit 6.
- the control unit 6 provides a potential change control signal DLS for instructing a switching operation of the potential change switch 50 to each of the N potential change switches 50 via the potential change wiring 54.
- Such N potential change switches 50 may be formed side by side with the light receiving unit 20 on the glass substrate 12 or formed on a single crystal silicon substrate prepared separately from the glass substrate 12. May be. By forming N potential change switches 50 on the single crystal silicon substrate, high-speed operation can be realized by the channel region, the drain region, and the source region made of single crystal silicon. Further, the degree of freedom in design and the degree of integration can be increased without being restricted by the process rules of polycrystalline silicon or amorphous silicon.
- Each of the N integrating circuits 42 has an input terminal connected to the potential changing switch 50, and accumulates electric charges input to the input terminal from the read wirings R 1 to RN via the potential changing switch 50. Then, a voltage value corresponding to the accumulated charge amount is output from the output end to each of the N holding circuits 44.
- Each of the N integration circuits 42 is connected to the control unit 6 via a reset wiring 46 provided in common to the N integration circuits 42.
- Each of the N holding circuits 44 has an input terminal connected to the output terminal of the integrating circuit 42, holds a voltage value input to this input terminal, and uses the held voltage value for voltage output from the output terminal. Output to the wiring 48.
- Each of the N holding circuits 44 is connected to the control unit 6 via a holding wiring 45 provided in common to the N holding circuits 44. Also, each of the N holding circuits 44 are connected to a horizontal shift register section 61 of the control unit 6 via respective first row selection wiring U 1 ⁇ N-th column selection wiring U N.
- the vertical shift register unit 30 of the control unit 6 sends the m-th row selection control signal VS m to the N pixels P m, 1 to P m, N in the m-th row via the m-th row selection wiring Q m.
- the row selection control signals VS 1 to VS M are sequentially set to significant values.
- the horizontal shift register unit 61 of the control unit 6 provides the column selection control signals HS 1 to HS N to each of the N holding circuits 44 via the column selection wirings U 1 to U N.
- the column selection control signals HS 1 to HS N are also sequentially set to significant values.
- the control unit 6 provides the reset control signal RE to each of the N integrating circuits 42 via the reset wiring 46, and also supplies the holding control signal Hd via the holding wiring 45 to the N holding circuits. 44 each.
- FIG. 5 is a diagram illustrating an example of circuit configurations of the pixel P m, n , the integration circuit 42, and the holding circuit 44 of the solid-state imaging device 10.
- a circuit diagram of the pixel P m, n is shown as a representative of the M ⁇ N pixels P 1,1 to P M, N.
- the anode terminal of the photodiode 22 of the pixel P m, n is grounded, and the cathode terminal is connected to the readout wiring R n via the transistor 21.
- the transistor 21 of the pixel P m, n is provided with the m-th row selection control signal VS m from the vertical shift register unit 30 via the m-th row selection wiring Q m .
- the m-th row selection control signal VS m instructs the opening / closing operation of the transistor 21 included in each of the N pixels P m, 1 to P m, N in the m-th row. For example, when the m-th row selection control signal VS m is an insignificant value (for example, low level), the transistor 21 is turned off.
- the integration circuit 42 includes an amplifier 42a, a capacitive element 42b, and a discharge switch 42c.
- the capacitive element 42b and the discharge switch 42c are connected in parallel to each other and are connected between the input terminal and the output terminal of the amplifier 42a.
- Input terminal of the amplifier 42a is connected to the readout wiring line R n.
- the discharge switch 42c is provided with a reset control signal RE from the control unit 6 via the reset wiring 46.
- the reset control signal RE instructs the opening / closing operation of the discharge switch 42c of each of the N integration circuits 42.
- the reset control signal RE is an insignificant value (for example, high level)
- the discharging switch 42c is closed, the capacitive element 42b is discharged, and the output voltage value of the integrating circuit 42 is initialized.
- the reset control signal RE is a significant value (for example, low level)
- the discharge switch 42c is opened, and the charge input to the integration circuit 42 is accumulated in the capacitive element 42b.
- the voltage value is output from the integration circuit 42.
- the holding circuit 44 includes an input switch 44a, an output switch 44b, and a capacitive element 44c. One end of the capacitive element 44c is grounded. The other end of the capacitive element 44c is connected to the output end of the integrating circuit 42 through the input switch 44a, and is connected to the voltage output wiring 48 through the output switch 44b.
- the input switch 44 a is supplied with a holding control signal Hd from the control unit 6 via the holding wiring 45.
- the holding control signal Hd instructs the opening / closing operation of the input switch 44 a of each of the N holding circuits 44.
- the output switch 44b of the holding circuit 44, the n-th column selection control signal HS n passing through the n-th column selecting wiring U n are supplied from the control unit 6.
- the selection control signal HS n instructs the opening / closing operation of the output switch 44b of the holding circuit 44.
- the input switch 44a changes from the closed state to the open state, and the voltage value input to the holding circuit 44 at that time is held in the capacitive element 44c.
- the output switch 44b is closed and the voltage value held in the capacitive element 44c is output to the voltage output wiring 48.
- FIG. 6 is a timing chart for explaining the operation of the solid-state imaging device according to the comparative example.
- FIG. 6 shows, in order from the top, (a) reset control signal RE, (b) first row selection control signal VS 1 , (c) second row selection control signal VS 2 , (d) Mth row selection control signal VS. M , (e) holding control signal Hd, (f) first column selection control signal HS 1 to Nth column selection control signal HS N , (g) nodes of pixels P 1,1 to P 1, N in the first row A and the potential of the node B (see FIG.
- FIGS. 6G to 6I indicate the potential of the node A in FIG. 5, and the solid line indicates the node B (that is, the electrode potential of the photodiode 22).
- the control unit 6 is a first row selecting control signal VS 1 to high level.
- the transistors 21 are connected in the pixels P 1,1 to P 1, N in the first row, and the charges accumulated in the photodiodes 22 of the pixels P 1,1 to P 1, N are read out wiring R is output to the integrating circuit 42 through the 1 ⁇ R N, is accumulated in the capacitor 42b.
- the integration circuit 42 outputs a voltage value having a magnitude corresponding to the amount of charge accumulated in the capacitive element 42b. Incidentally, after the time t 13, the pixels P 1, 1 ⁇ P 1 of the first row, the N respective transistor 21 is disconnected.
- the control unit 6 sets the holding control signal Hd to a high level, whereby the input switch 44 a is connected in each of the N holding circuits 44.
- the voltage value output from the integrating circuit 42 is held by the capacitive element 44c.
- the control unit 6 is a first column selection control signal HS 1 ⁇ N-th column selection control signal HS N the high level sequentially.
- the output switches 44b of the N holding circuits 44 are sequentially closed, and the voltage values held in the capacitive element 44c are sequentially output to the voltage output wiring 48.
- the control unit 6 is a reset control signal RE at high level, the capacitor 42b of the integrating circuit 42 is discharged.
- the control unit 6 is a second row selecting control signal VS 2 to high level.
- the transistors 21 are connected in the pixels P 2,1 to P 2, N in the second row, and the charges accumulated in the photodiodes 22 of the pixels P 2,1 to P 2, N are read out wiring R is output to the integrating circuit 42 through the 1 ⁇ R N, is accumulated in the capacitor 42b.
- a voltage value having a magnitude corresponding to the amount of charge accumulated in the capacitive element 42b is sequentially output from the N holding circuits 44 to the voltage output wiring 48.
- the charges accumulated in the pixels in the third to Mth rows are also converted into voltage values by the same operation as in the first row and sequentially output to the voltage output wiring 48. In this way, reading of image data for one frame from the light receiving unit 20 is completed.
- the solid-state imaging device stops operating for a predetermined time, and makes a sufficient amount of light incident on the photodiodes 22 of the pixels P 1,1 to P M, N to accumulate electric charges.
- the length of this accumulation period is arbitrarily set, it is, for example, not less than 0 seconds and not more than 10 seconds.
- the solid-state imaging device repeats the above-described readout operation again. Since the readout method described above is a so-called rolling shutter method, the exact charge accumulation time in each photodiode 22 is from the moment when the transistors 21 of the pixels P 1,1 to P M, N are in a non-connected state. This is the time until the transistors 21 of the pixels P 1,1 to P M, N are again connected in the next readout period (that is, the reciprocal of the frame rate).
- FIG. 7 is a diagram for explaining this problem.
- the transistor 21 and the photodiode 22 of one pixel P m, n , the integration circuit 42, the n-th column readout wiring R n , and the m-th row are shown. and selecting wiring Q m is shown.
- the node A on the n- th column readout wiring R n is connected to the input terminal of the amplifier 42a of the integrating circuit 42, and the potential of the node A is always constant (input potential unique to the amplifier). (Broken line in FIGS. 6 (g) to (i)).
- the node B on the electrode of the photodiode 22 is short-circuited to the node A when the transistor 21 is connected, so that it has the same potential as the node A (solid line in FIGS. 6G to 6I, for example, time t 12 to t 13 ).
- the charge accumulated in the photodiode 22 is read out to the integrating circuit 42 through the wiring R n for the n-th column readout, the photodiode 22 is reset. At this time, electric charges are accumulated between the control terminal and each current terminal by the parasitic capacitance PC existing between the control terminal of the transistor 21 and each current terminal.
- the voltage applied to the control terminal of the transistor 21 is lowered in order to bring the transistor 21 into a disconnected state.
- an amount of charge ⁇ Q corresponding to the decrease width of the voltage applied to the control terminal flows into the photodiode 22. Since a potential difference corresponding to the amount of charge ⁇ Q is generated at both ends of the photodiode 22, the potential at the node B is lowered by the potential difference.
- the potential fluctuation ⁇ Vb at node B becomes remarkably large.
- the off resistance of the transistor including the region made of amorphous silicon or low-temperature polycrystalline silicon is smaller than the off resistance of the transistor made of single crystal silicon, and therefore, the magnitude of leakage between the current terminals cannot be ignored. Since a potential difference is generated between the current terminals of the transistor due to the potential fluctuation ⁇ Vb of the node B described above, the potential of the node B approaches (increases) the potential of the node A with the passage of time due to the leakage of the transistor 21.
- FIGS. 6G to 6I indicate such a change in the potential of the node B, and the accumulation of charges due to incident light in the photodiode 22 is not considered. That is, the solid line in FIGS. 6G to 6I represents the offset component of the photodiode 22.
- the size of the parasitic capacitance and the off-resistance of the transistor 21 are finite, which causes a problem that the offset component (the potential of the node B) of the photodiode 22 varies with time.
- the offset component of the photodiode 22 varies with time in this way, the amount of charge output from the photodiode 22 varies depending on the length of the set value of the accumulation period, so each pixel P 1,1 to P M, This is a factor that reduces the detection accuracy of incident light at N.
- the solid-state imaging device 10 of the present embodiment includes potential changing means (potential changing switch 50).
- FIG. 8 is a timing chart for explaining the operation of the solid-state imaging device 10 according to this embodiment.
- the reset control signal RE (a) the reset control signal RE, (b) the first row selection control signal VS 1 , (c ) Second row selection control signal VS 2 , (d) Mth row selection control signal VS M , (e) Holding control signal Hd, (f) First column selection control signal HS 1 to Nth column selection control signal HS N , (G) potential change control signal DLS, (h) potentials of nodes A and B of the pixels P 1,1 to P 1, N in the first row, and (i) pixels P 2,1 to P in the second row. 2, the potentials of the nodes A and B of N , and (j) the potentials of the nodes A and B of the pixels P M, 1 to P M, N in the M-th row, respectively.
- the differences between the charts shown in FIGS. 6 and 8 are the presence / absence of a chart related to the potential change control signal DLS and the waveform of the electrode potential of the photodiode 22.
- the connection state of the potential change switch 50 is switched during the period from time t 21 to t 22 included in the accumulation period. As a result, the potential of the node A becomes equal to the potential Vdr.
- this potential Vdr is set to a constant potential equivalent to the electrode potential of the photodiode 22 of each of the pixels P 1,1 to P M, N during the accumulation period (that is, a potential in consideration of the potential fluctuation ⁇ Vb), During the period from time t 21 to t 22 , the potential difference generated between the current terminals of the transistor 21 is suppressed to be small. As a result, leakage between the current terminals of the transistor 21 is suppressed, and temporal variation of the offset component in the photodiode 22 can be reduced.
- the amount of charge output from the photodiode 22 can be stabilized regardless of the length of the accumulation period , and the incident light in each of the pixels P 1,1 to P M, N can be stabilized. Detection accuracy can be improved.
- Such an effect by the solid-state imaging device 10 according to the present embodiment becomes remarkable when the accumulation period is sufficiently longer than the readout period.
- the longer the accumulation period the greater the variation in the electrode potential of the photodiode 22.
- the channel region 21a, the source region 21b, and the drain region 21c of the transistor 21 are made of polycrystalline silicon.
- a wider light-receiving surface is required for a solid-state imaging device such as a two-dimensional flat panel image sensor used for medical purposes (such as dental X-ray imaging).
- the light-receiving surface of the solid-state image sensor is caused by the size of the single crystal silicon wafer having a diameter of 12 inches at the maximum. Will be limited.
- a polycrystalline silicon film is formed on an insulating substrate such as a glass substrate, and an electronic component such as a photodiode or other transistor is formed on the surface of the polycrystalline silicon, thereby using a single crystal silicon wafer.
- an electronic component such as a photodiode or other transistor is formed on the surface of the polycrystalline silicon, thereby using a single crystal silicon wafer.
- the parasitic capacitance between the control terminal and the current terminal is larger than that of a transistor made of single crystal silicon.
- the solid-state imaging device 10 of the present embodiment it is possible to effectively suppress the influence due to the increase in parasitic capacitance due to the excellent effects described above.
- the channel region 21a, the source region 21b, and the drain region 21c of the transistor 21 may be made of amorphous silicon, or may be made of both polycrystalline silicon and amorphous silicon. Even in this case, the effects of the solid-state imaging device 10 of the present embodiment described above can be suitably obtained.
- the transistor 21 made of amorphous silicon has a problem that charges are trapped transiently when the transistor 21 is disconnected (so-called memory effect). This is because amorphous silicon is amorphous, so that the density of the level for trapping charges in the channel of the FET increases.
- polycrystalline silicon especially low-temperature polycrystalline silicon
- the potential changing means includes N potential changing switches 50 provided between the N reading wirings R 1 to R N and the N integrating circuits 42, Each of the potential changing switches 50 selectively connects each of the N readout wirings R 1 to R N to one of the wiring 52 for supplying another potential Vdr and the N integrating circuits 42. To do. Since the potential changing means has such a configuration, the potentials of the read wirings R 1 to R N can be suitably switched to a potential Vdr different from the input potential of the integrating circuit 42.
- FIGS. 9 and 10 are diagrams illustrating a first modification of the solid-state imaging device 10 according to the embodiment.
- FIG. 9 is a diagram illustrating an internal configuration of the solid-state imaging device 10A according to the present modification.
- FIG. 10 shows the configuration of the pixel P m, n , the integration circuit 42A, the holding circuit 44, and their peripheral circuits in the solid-state imaging device 10A.
- the difference between the solid-state imaging device 10A according to the present modification and the above embodiment is the configuration of the potential changing means and the integrating circuit.
- the solid-state imaging device 10A according to this modification includes a switch 56 and a wiring 58 as potential changing means instead of the N potential changing switches 50 shown in FIG.
- the switch 56 has an input end 56a (first input end), an input end 56b (second input end), and an output end 56c. Either one of the input ends 56a and 56b and the output end 56c are connected to each other. Selectively connect to. Selection of which of the input terminals 56a and 56b is connected to the output terminal 56c is performed by a potential change control signal DLS provided from the control unit 6.
- control terminal of the switch 56 for controlling the connection state of the switch 56 is connected to the control unit 6 via the potential change wiring 60 connected to the switch 56.
- the control unit 6 provides a potential change control signal DLS for instructing the switching operation of the switch 56 to the switch 56 via the potential change wiring 60.
- the integration circuit 42A of the present modification has a differential amplifier (differential amplifier) 42d instead of the amplifier 42a shown in FIG.
- a differential amplifier differential amplifier
- the output terminal 56c of the switch 56 is connected via a wiring 58 to an input terminal different from the input terminal to which the reading wirings R 1 to RN are connected, of the two input terminals of the differential amplifier 42d.
- a potential Vdr1 for resetting the photodiode 22 when the charge of the photodiode 22 is read is applied to one input terminal 56a of the switch 56.
- a potential Vdr2 different from the potential Vdr1 is applied to the other input end 56b of the switch 56.
- the potential Vdr2 corresponds to the potential Vdr in the above embodiment, and is set to a constant potential that is equivalent (same or close to the same value) as the electrode potential of the photodiode 22 of each of the pixels P 1,1 to P M, N during the accumulation period, for example.
- the potential changing means is configured by the switch 56 and the wiring 58, and by switching the potential (reference potential) input to the other input terminal of the differential amplifier 42d, the reading wiring the potential of R 1 ⁇ R N, switch to another potential Vdr2 the potential of one input terminal of the integrating circuit 42A.
- the potential changing means may have such a configuration, and the solid-state imaging device 10A of the present modification can achieve the same effect as that of the above-described embodiment.
- FIG. 11 is a timing chart for explaining the operation of the solid-state imaging device as a second modification of the solid-state imaging device 10 according to the embodiment.
- FIG. 11 in order from the top, (a) reset control signal RE, (b) first row selection control signal VS 1 , (c) second row selection control signal VS 2 , (d) Mth row selection control signal VS. M , (e) holding control signal Hd, (f) first column selection control signal HS 1 to Nth column selection control signal HS N , (g) potential change control signal DLS, (h) pixel P 1 in the first row.
- the timing chart according to the embodiment shown in FIG. 8 is different from the timing chart according to the present modification example shown in FIG. 11 in that the timing at which the potential change control signal DLS is turned on and the photodiode 22. It is a waveform of electrode potential.
- the potential change control signal DLS is set to low level during the period when the row selection control signals VS 1 to VS M are high level, and the change control signal DLS is set to high level during other periods.
- the time at which the reset control signal RE becomes low level from time t 14 when the holding control signal Hd becomes high level.
- FIG. 12 is a timing chart for explaining the operation of the solid-state imaging device as a third modification of the solid-state imaging device 10 according to the embodiment.
- FIG. 12 shows, in order from the top, (a) reset control signal RE, (b) first row selection control signal VS 1 , (c) second row selection control signal VS 2 , and (d) Mth row selection control signal VS. M , (e) holding control signal Hd, (f) first column selection control signal HS 1 to Nth column selection control signal HS N , (g) potential change control signal DLS, (h) pixel P 1 in the first row.
- a difference between the timing chart according to the embodiment shown in FIG. 8 and the timing chart according to the present modification shown in FIG. 12 is that the row selection control signals VS 1 to VS M become high level. is there.
- the reset control signal RE is Even during the high level period (time t 16 to t 18 etc.), a period in which the row selection control signals VS 1 to VS M are high level is provided.
- the row selection control signals VS 1 to VS M are set to the high level in parallel with the discharging operation of the capacitive element 42b of the integrating circuit 42, whereby the following effects can be obtained. That is, the electric charge remaining without being output from the photodiode 22 between the times t 12 and t 13 is output to the integrating circuit 42 through the transistor 21 and the readout wirings R 1 to R N , and the capacitive element 42b Can be discharged together with the charge stored in the battery. Accordingly, it is possible to effectively reduce the influence of the so-called delay effect in which the charge accumulated in the photodiode 22 is superimposed on the data of the next frame.
- the operations of the row selection control signals VS 1 to VS M as in the present modification can also be applied to the second modification. However, in that case, it is preferable to perform the switching operation of the potential change switch 50 in a period excluding a period in which the row selection control signals VS 1 to VS M are at a high level (that is, a period in which the transistor 21 is in a connected state). .
- the solid-state imaging device according to the present invention is not limited to the above-described embodiments and modifications, and various other modifications are possible.
- the present invention is applied to a solid-state imaging device in which a polycrystalline silicon film or an amorphous silicon film is formed on a glass substrate has been shown, but the present invention has such a configuration.
- the present invention is applicable to a solid-state imaging device manufactured on a single crystal silicon substrate.
- the FET is exemplified as the transistor 21 included in each pixel.
- the transistor 21 may be a bipolar transistor.
- the control terminal means the base
- the current terminal means the collector or emitter.
- the potential changing unit switches the potential of the N readout wirings to a potential different from the input potential of the N integration circuits.
- the present invention is not limited to such a configuration, and in general, the potential changing means sets the potentials of the K read wirings included in the N read wirings, where K is an integer between 1 and N, Any configuration may be used as long as it is switched to a potential different from the input potential of the corresponding K integration circuits.
- M ⁇ N pixels (M is an integer of 2 or more and N is an integer of 2 or more) each including M pixels, each including a photodiode and a transistor having one end connected to the photodiode.
- Light receiving units arranged two-dimensionally in N columns, N readout wirings arranged for each column and connected to the other ends of the transistors included in the corresponding column of pixels, and N readout readouts A signal output unit that includes N integration circuits that generate voltage values corresponding to the amount of charge input through each of the wirings, and that sequentially outputs the voltage values output from the N integration circuits; Potential changing means for switching the potentials of the K reading wirings (K is an integer from 1 to N) included in the reading wirings to a potential different from the input potentials of the corresponding K integrating circuits; Voltage value output operation and potential change in signal output section A control unit that controls the switching operation of the potential in the stage, and the control unit passes a readout period in which a voltage value corresponding to the amount of charge generated in M ⁇ N pixels is sequentially output from the signal output unit After that, the potential of the K readout wirings is switched to another potential for a predetermined period included before the start of the next readout period.
- the transistor may include a region including at least one of polycrystalline silicon and amorphous silicon.
- the parasitic capacitance is larger than that of a transistor made of single crystal silicon.
- the solid-state imaging device is particularly suitable in such a case.
- the potential changing means includes K switches provided between the K readout wirings and the K integration circuits, and the K switches are for K readouts.
- Each of the wirings may be selectively connected to one of a wiring for supplying another potential and K integration circuits. Since the potential changing means has such a configuration, the potential of the readout wiring can be suitably switched to a potential different from the input potential of the integration circuit.
- the K switches may include a region made of single crystal silicon.
- each of the K integration circuits includes a differential amplifier and a capacitive element connected between one input end and the output end of the differential amplifier.
- a switch having first and second input ends and an output end and selectively connecting one of the first and second input ends to the output end, the output end being the other input end of the differential amplifier;
- the first input terminal may be applied with a potential corresponding to the input potential, and the second input terminal may be applied with another potential. Since the potential changing means has such a configuration, the potential of the readout wiring can be suitably switched to a potential different from the input potential of the integration circuit.
- N readout wirings arranged for each column and connected to the other ends of the transistors included in the pixels of the corresponding column, and N readout wirings
- a signal output unit that sequentially outputs the voltage values output from the N integration circuits, including N integration circuits that generate voltage values according to the amount of charge that is input through each of the N integration circuits;
- a potential changing means for switching the potential of the readout wiring to a potential different from the input potential of the N integration circuits, and a control for controlling the voltage value output operation in the signal output section and the potential switching operation in the potential changing means.
- control units A predetermined period included between the start of the next readout period after the readout period in which the voltage value corresponding to the amount of charge generated in the pixel is sequentially output from the signal output unit has elapsed, and N The potential of the read wiring may be switched to another potential.
- the potential changing unit includes N switches provided between the N readout wirings and the N integration circuits, and the N switches include N readouts.
- Each of the wirings for use may be configured to be selectively connected to any one of a wiring for supplying a different potential and N integration circuits. Since the potential changing means has such a configuration, the potential of the readout wiring can be suitably switched to a potential different from the input potential of the integration circuit.
- the N switches may include a region made of single crystal silicon.
- each of the N integrating circuits includes a differential amplifier and a capacitive element connected between one input terminal and the output terminal of the differential amplifier
- the potential changing unit includes A switch having first and second input ends and an output end and selectively connecting one of the first and second input ends to the output end, the output end being the other input end of the differential amplifier;
- the first input terminal may be applied with a potential corresponding to the input potential, and the second input terminal may be applied with another potential. Since the potential changing means has such a configuration, the potential of the readout wiring can be suitably switched to a potential different from the input potential of the integration circuit.
- the present invention can be used as a solid-state imaging device capable of increasing the detection accuracy of incident light in each pixel.
- Potential change control signal Hd ... Holding control signal, HS 1 to HS N ... Column selection control signal, P 1,1 to P M, N ... Pixel, Q 1 to Q M ... Row selection wiring, R 1 to R N.
- Reset control signal U 1 to U N ... column selection wiring, VS 1 to VS M ... row selection control signal.
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Abstract
Description
ΔVb=ΔQ/Cpd=ΔVg・PC/Cpd ・・・(1)
Claims (5)
- フォトダイオード、及び該フォトダイオードに一端が接続されたトランジスタを各々含むM×N個(Mは2以上の整数、Nは2以上の整数)の画素がM行N列に2次元配列されて成る受光部と、
各列毎に配設され、対応する列の前記画素に含まれる前記トランジスタの他端に接続されたN本の読出用配線と、
前記N本の読出用配線のそれぞれを経て入力される電荷の量に応じた電圧値を生成するN個の積分回路を含み、該N個の積分回路から出力された電圧値を順次に出力する信号出力部と、
前記N本の読出用配線に含まれるK本(Kは1以上N以下の整数)の読出用配線の電位を、対応するK個の前記積分回路の入力電位とは別の電位に切り替える電位変更手段と、
前記信号出力部における電圧値の出力動作、及び前記電位変更手段における電位の切り替え動作を制御する制御部と
を備え、
前記制御部は、前記M×N個の画素において発生した電荷の量に応じた電圧値が前記信号出力部から順次に出力される読み出し期間が経過した後、次の読み出し期間が開始されるまでの間に含まれる所定の期間、前記K本の読出用配線の電位を前記別の電位に切り替えることを特徴とする、固体撮像装置。 - 前記トランジスタが、多結晶シリコン及びアモルファスシリコンのうち少なくとも一方からなる領域を含むことを特徴とする、請求項1に記載の固体撮像装置。
- 前記電位変更手段は、前記K本の読出用配線と前記K個の積分回路との間に設けられたK個のスイッチを含み、該K個のスイッチが、前記K本の読出用配線それぞれを、前記別の電位を供給するための配線及び前記K個の積分回路の何れか一方に選択的に接続することを特徴とする、請求項1または2に記載の固体撮像装置。
- 前記K個のスイッチが、単結晶シリコンからなる領域を含むことを特徴とする、請求項3に記載の固体撮像装置。
- 前記K個の積分回路のそれぞれが、差動増幅器及び該差動増幅器の一方の入力端と出力端との間に接続された容量素子を含み、
前記電位変更手段が、第1及び第2の入力端と出力端とを有し前記第1及び第2の入力端の何れかと前記出力端とを選択的に接続するスイッチを含み、
前記出力端が、前記差動増幅器の他方の入力端に接続されており、
前記第1の入力端には前記入力電位に相当する電位が印加され、
前記第2の入力端には前記別の電位が印加されることを特徴とする、請求項1~4のいずれか一項に記載の固体撮像装置。
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Publication number | Publication date |
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EP2667591A4 (en) | 2015-10-21 |
CN103314577B (zh) | 2016-10-12 |
CN103314577A (zh) | 2013-09-18 |
JP5936554B2 (ja) | 2016-06-22 |
EP2667591B1 (en) | 2019-01-23 |
EP2667591A1 (en) | 2013-11-27 |
KR20140003418A (ko) | 2014-01-09 |
KR101916485B1 (ko) | 2018-11-07 |
JPWO2012098801A1 (ja) | 2014-06-09 |
US20130292549A1 (en) | 2013-11-07 |
US9049394B2 (en) | 2015-06-02 |
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