JP2000040690A5 - - Google Patents

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Publication number
JP2000040690A5
JP2000040690A5 JP1998209648A JP20964898A JP2000040690A5 JP 2000040690 A5 JP2000040690 A5 JP 2000040690A5 JP 1998209648 A JP1998209648 A JP 1998209648A JP 20964898 A JP20964898 A JP 20964898A JP 2000040690 A5 JP2000040690 A5 JP 2000040690A5
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JP
Japan
Prior art keywords
etching
self
bias voltage
reaction chamber
intensity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP1998209648A
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English (en)
Japanese (ja)
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JP2000040690A (ja
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Publication date
Application filed filed Critical
Priority to JP10209648A priority Critical patent/JP2000040690A/ja
Priority claimed from JP10209648A external-priority patent/JP2000040690A/ja
Priority to US09/358,397 priority patent/US6372523B1/en
Publication of JP2000040690A publication Critical patent/JP2000040690A/ja
Publication of JP2000040690A5 publication Critical patent/JP2000040690A5/ja
Withdrawn legal-status Critical Current

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JP10209648A 1998-07-24 1998-07-24 エッチング方法およびエッチング装置 Withdrawn JP2000040690A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10209648A JP2000040690A (ja) 1998-07-24 1998-07-24 エッチング方法およびエッチング装置
US09/358,397 US6372523B1 (en) 1998-07-24 1999-07-22 Etching method and etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10209648A JP2000040690A (ja) 1998-07-24 1998-07-24 エッチング方法およびエッチング装置

Publications (2)

Publication Number Publication Date
JP2000040690A JP2000040690A (ja) 2000-02-08
JP2000040690A5 true JP2000040690A5 (enExample) 2005-10-06

Family

ID=16576289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10209648A Withdrawn JP2000040690A (ja) 1998-07-24 1998-07-24 エッチング方法およびエッチング装置

Country Status (2)

Country Link
US (1) US6372523B1 (enExample)
JP (1) JP2000040690A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7323116B2 (en) * 2004-09-27 2008-01-29 Lam Research Corporation Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH056873A (ja) 1991-06-26 1993-01-14 Oki Electric Ind Co Ltd エツチング終点検出方法およびエツチング装置
JPH0529277A (ja) 1991-07-25 1993-02-05 Nec Yamagata Ltd 反応性イオンエツチングの終点検出方法
JPH05152253A (ja) 1991-11-27 1993-06-18 Toyota Motor Corp ドライエツチングにおけるエツチング終点検出装置
US5668019A (en) * 1992-01-30 1997-09-16 Mitsubishi Denki Kabushiki Kaisha Method of fabricating thin film transistor
US5653894A (en) * 1992-12-14 1997-08-05 Lucent Technologies Inc. Active neural network determination of endpoint in a plasma etch process
JPH08288258A (ja) 1995-04-18 1996-11-01 Hitachi Ltd エッチング終点判定方法並びにドライエッチング方法及びその装置

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