JP2000040690A - エッチング方法およびエッチング装置 - Google Patents

エッチング方法およびエッチング装置

Info

Publication number
JP2000040690A
JP2000040690A JP10209648A JP20964898A JP2000040690A JP 2000040690 A JP2000040690 A JP 2000040690A JP 10209648 A JP10209648 A JP 10209648A JP 20964898 A JP20964898 A JP 20964898A JP 2000040690 A JP2000040690 A JP 2000040690A
Authority
JP
Japan
Prior art keywords
etching
self
bias voltage
end point
change
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP10209648A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000040690A5 (enExample
Inventor
Hideomi Suzawa
英臣 須澤
Tomohiko Sato
友彦 佐藤
Yoshihiro Kusuyama
義弘 楠山
Koji Ono
幸治 小野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP10209648A priority Critical patent/JP2000040690A/ja
Priority to US09/358,397 priority patent/US6372523B1/en
Publication of JP2000040690A publication Critical patent/JP2000040690A/ja
Publication of JP2000040690A5 publication Critical patent/JP2000040690A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP10209648A 1998-07-24 1998-07-24 エッチング方法およびエッチング装置 Withdrawn JP2000040690A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10209648A JP2000040690A (ja) 1998-07-24 1998-07-24 エッチング方法およびエッチング装置
US09/358,397 US6372523B1 (en) 1998-07-24 1999-07-22 Etching method and etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10209648A JP2000040690A (ja) 1998-07-24 1998-07-24 エッチング方法およびエッチング装置

Publications (2)

Publication Number Publication Date
JP2000040690A true JP2000040690A (ja) 2000-02-08
JP2000040690A5 JP2000040690A5 (enExample) 2005-10-06

Family

ID=16576289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10209648A Withdrawn JP2000040690A (ja) 1998-07-24 1998-07-24 エッチング方法およびエッチング装置

Country Status (2)

Country Link
US (1) US6372523B1 (enExample)
JP (1) JP2000040690A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7323116B2 (en) * 2004-09-27 2008-01-29 Lam Research Corporation Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH056873A (ja) 1991-06-26 1993-01-14 Oki Electric Ind Co Ltd エツチング終点検出方法およびエツチング装置
JPH0529277A (ja) 1991-07-25 1993-02-05 Nec Yamagata Ltd 反応性イオンエツチングの終点検出方法
JPH05152253A (ja) 1991-11-27 1993-06-18 Toyota Motor Corp ドライエツチングにおけるエツチング終点検出装置
US5668019A (en) * 1992-01-30 1997-09-16 Mitsubishi Denki Kabushiki Kaisha Method of fabricating thin film transistor
US5653894A (en) * 1992-12-14 1997-08-05 Lucent Technologies Inc. Active neural network determination of endpoint in a plasma etch process
JPH08288258A (ja) 1995-04-18 1996-11-01 Hitachi Ltd エッチング終点判定方法並びにドライエッチング方法及びその装置

Also Published As

Publication number Publication date
US6372523B1 (en) 2002-04-16

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