JP2000035672A - 半導体装置の製造方法及び半導体装置 - Google Patents

半導体装置の製造方法及び半導体装置

Info

Publication number
JP2000035672A
JP2000035672A JP11062047A JP6204799A JP2000035672A JP 2000035672 A JP2000035672 A JP 2000035672A JP 11062047 A JP11062047 A JP 11062047A JP 6204799 A JP6204799 A JP 6204799A JP 2000035672 A JP2000035672 A JP 2000035672A
Authority
JP
Japan
Prior art keywords
resist pattern
organic film
acid
semiconductor device
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11062047A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000035672A5 (enExample
Inventor
Takayuki Saito
隆幸 斉藤
Takeo Ishibashi
健夫 石橋
Toshiyuki Toyoshima
利之 豊島
Kanji Sugino
幹二 杉野
Naoki Yasuda
直紀 保田
Satoshi Miyagi
聡 宮城
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11062047A priority Critical patent/JP2000035672A/ja
Priority to US09/371,499 priority patent/US6180320B1/en
Publication of JP2000035672A publication Critical patent/JP2000035672A/ja
Publication of JP2000035672A5 publication Critical patent/JP2000035672A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP11062047A 1998-03-09 1999-03-09 半導体装置の製造方法及び半導体装置 Pending JP2000035672A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP11062047A JP2000035672A (ja) 1998-03-09 1999-03-09 半導体装置の製造方法及び半導体装置
US09/371,499 US6180320B1 (en) 1998-03-09 1999-08-10 Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP10-56686 1998-03-09
JP5668698 1998-03-09
JP10-130052 1998-05-13
JP13005298 1998-05-13
JP11062047A JP2000035672A (ja) 1998-03-09 1999-03-09 半導体装置の製造方法及び半導体装置

Publications (2)

Publication Number Publication Date
JP2000035672A true JP2000035672A (ja) 2000-02-02
JP2000035672A5 JP2000035672A5 (enExample) 2006-04-06

Family

ID=27295998

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11062047A Pending JP2000035672A (ja) 1998-03-09 1999-03-09 半導体装置の製造方法及び半導体装置

Country Status (1)

Country Link
JP (1) JP2000035672A (enExample)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002184673A (ja) * 2000-12-15 2002-06-28 Matsushita Electric Ind Co Ltd レジストパターン形成方法
US6811817B2 (en) 2001-07-05 2004-11-02 Tokyo Ohka Kogyo Co., Ltd. Method for reducing pattern dimension in photoresist layer
JP2007047822A (ja) * 2006-10-26 2007-02-22 Mitsubishi Electric Corp レジスト材料
US7338750B2 (en) 2002-01-25 2008-03-04 Fujitsu Limited Resist pattern thickness reducing material, resist pattern and process for forming thereof, and semiconductor device and process for manufacturing thereof
WO2009119806A1 (ja) 2008-03-28 2009-10-01 旭化成ファインケム株式会社 ビニルスルホン酸、その重合体及びその製造方法
JP2010072072A (ja) * 2008-09-16 2010-04-02 Az Electronic Materials Kk 基板処理液およびそれを用いたレジスト基板処理方法
US7727707B2 (en) 2004-12-10 2010-06-01 Panasonic Corporation Barrier film material and pattern formation method using the same
WO2010097856A1 (ja) * 2009-02-27 2010-09-02 パナソニック株式会社 パターン形成方法
US7820367B2 (en) 2004-10-04 2010-10-26 Fujitsu Limited Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for producing the same
WO2011155347A1 (ja) * 2010-06-07 2011-12-15 東京応化工業株式会社 レジストパターン形成方法及びパターン微細化処理剤
JP2014510954A (ja) * 2011-03-31 2014-05-01 東京エレクトロン株式会社 リソグラフィ適用において感放射線材料のラインを幅狭化する方法
JP2014170922A (ja) * 2012-12-31 2014-09-18 Rohm & Haas Electronic Materials Llc イオン注入法
WO2017176282A1 (en) * 2016-04-08 2017-10-12 Intel Corporation Two-stage bake photoresist with releasable quencher
JP2019517137A (ja) * 2016-05-13 2019-06-20 東京エレクトロン株式会社 光剤を用いた限界寸法制御
JP2022548863A (ja) * 2019-09-19 2022-11-22 東京エレクトロン株式会社 狭小トレンチを形成する方法

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002184673A (ja) * 2000-12-15 2002-06-28 Matsushita Electric Ind Co Ltd レジストパターン形成方法
US6811817B2 (en) 2001-07-05 2004-11-02 Tokyo Ohka Kogyo Co., Ltd. Method for reducing pattern dimension in photoresist layer
US7338750B2 (en) 2002-01-25 2008-03-04 Fujitsu Limited Resist pattern thickness reducing material, resist pattern and process for forming thereof, and semiconductor device and process for manufacturing thereof
US8198009B2 (en) 2004-10-04 2012-06-12 Fujitsu Limited Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for producing the same
US7820367B2 (en) 2004-10-04 2010-10-26 Fujitsu Limited Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for producing the same
US7727707B2 (en) 2004-12-10 2010-06-01 Panasonic Corporation Barrier film material and pattern formation method using the same
JP2007047822A (ja) * 2006-10-26 2007-02-22 Mitsubishi Electric Corp レジスト材料
WO2009119806A1 (ja) 2008-03-28 2009-10-01 旭化成ファインケム株式会社 ビニルスルホン酸、その重合体及びその製造方法
US9072983B2 (en) 2008-03-28 2015-07-07 Asahi Kasei Finechem Co., Ltd. Vinyl sulfonic acid, polymer thereof, and production method thereof
JP2010072072A (ja) * 2008-09-16 2010-04-02 Az Electronic Materials Kk 基板処理液およびそれを用いたレジスト基板処理方法
US8067148B2 (en) 2009-02-27 2011-11-29 Panasonic Corporation Pattern forming method
WO2010097856A1 (ja) * 2009-02-27 2010-09-02 パナソニック株式会社 パターン形成方法
WO2011155347A1 (ja) * 2010-06-07 2011-12-15 東京応化工業株式会社 レジストパターン形成方法及びパターン微細化処理剤
JP2011257499A (ja) * 2010-06-07 2011-12-22 Tokyo Ohka Kogyo Co Ltd レジストパターン形成方法及びパターン微細化処理剤
JP2014510954A (ja) * 2011-03-31 2014-05-01 東京エレクトロン株式会社 リソグラフィ適用において感放射線材料のラインを幅狭化する方法
JP2014170922A (ja) * 2012-12-31 2014-09-18 Rohm & Haas Electronic Materials Llc イオン注入法
WO2017176282A1 (en) * 2016-04-08 2017-10-12 Intel Corporation Two-stage bake photoresist with releasable quencher
US11315798B2 (en) 2016-04-08 2022-04-26 Intel Corporation Two-stage bake photoresist with releasable quencher
US11955343B2 (en) 2016-04-08 2024-04-09 Intel Corporation Two-stage bake photoresist with releasable quencher
JP2019517137A (ja) * 2016-05-13 2019-06-20 東京エレクトロン株式会社 光剤を用いた限界寸法制御
JP2022548863A (ja) * 2019-09-19 2022-11-22 東京エレクトロン株式会社 狭小トレンチを形成する方法
JP7554539B2 (ja) 2019-09-19 2024-09-20 東京エレクトロン株式会社 狭小トレンチを形成する方法

Similar Documents

Publication Publication Date Title
US6180320B1 (en) Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby
KR100343697B1 (ko) 반도체장치및그의제조방법
US8895234B2 (en) Immersion lithography watermark reduction
JP3723670B2 (ja) 周波数２重化ハイブリッド・フォトレジスト
JP3158710B2 (ja) 化学増幅レジストパターンの形成方法
CN101427348B (zh) 用于降低图案中的最小间距的方法
JP2000035672A (ja) 半導体装置の製造方法及び半導体装置
JP2001109165A (ja) パターン形成方法
JPH07261393A (ja) ネガ型レジスト組成物
US6274289B1 (en) Chemical resist thickness reduction process
CN100385622C (zh) 精细图形的形成方法
CN108983546A (zh) 微影方法
US20040072096A1 (en) Micropattern forming material and fine structure forming method
US20070099429A1 (en) Post exposure resist bake
JP2000035672A5 (enExample)
US20050181313A1 (en) Method for forming openings in a substrate using a packing and unpacking process
EP0785470A2 (en) Method of providing resist pattern
JP2001194785A (ja) レジストパターン微細化材料及びこの材料を用いた半導体装置の製造方法並びにこの製造方法を用いた半導体装置
KR0160921B1 (ko) 레지스트 패턴의 형성방법
JPH07335519A (ja) パタン形成方法
JPH09320930A (ja) パターン形成方法およびパターン形成装置
KR100367502B1 (ko) 반도체소자의 미세패턴 제조방법
JP3684518B2 (ja) レジスト・パターン形成方法
TWI825960B (zh) 半導體裝置的製造方法
JP3502327B2 (ja) パターン形成材料及びパターン形成方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060221

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060221

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20081224

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090602