ITTO20000936A0 - Memoria non volatile multilivello a ingombro ridotto e a basso consumo. - Google Patents
Memoria non volatile multilivello a ingombro ridotto e a basso consumo.Info
- Publication number
- ITTO20000936A0 ITTO20000936A0 IT2000TO000936A ITTO20000936A ITTO20000936A0 IT TO20000936 A0 ITTO20000936 A0 IT TO20000936A0 IT 2000TO000936 A IT2000TO000936 A IT 2000TO000936A IT TO20000936 A ITTO20000936 A IT TO20000936A IT TO20000936 A0 ITTO20000936 A0 IT TO20000936A0
- Authority
- IT
- Italy
- Prior art keywords
- volatile memory
- low power
- small footprint
- multilevel non
- multilevel
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Analogue/Digital Conversion (AREA)
- Memory System Of A Hierarchy Structure (AREA)
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT2000TO000936A IT1320699B1 (it) | 2000-10-06 | 2000-10-06 | Memoria non volatile multilivello a ingombro ridotto e a basso consumo. |
| US09/972,726 US6542404B2 (en) | 2000-10-06 | 2001-10-04 | Small size, low consumption, multilevel nonvolatile memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT2000TO000936A IT1320699B1 (it) | 2000-10-06 | 2000-10-06 | Memoria non volatile multilivello a ingombro ridotto e a basso consumo. |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| ITTO20000936A0 true ITTO20000936A0 (it) | 2000-10-06 |
| ITTO20000936A1 ITTO20000936A1 (it) | 2002-04-06 |
| IT1320699B1 IT1320699B1 (it) | 2003-12-10 |
Family
ID=11458096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT2000TO000936A IT1320699B1 (it) | 2000-10-06 | 2000-10-06 | Memoria non volatile multilivello a ingombro ridotto e a basso consumo. |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6542404B2 (it) |
| IT (1) | IT1320699B1 (it) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ITMI20050798A1 (it) * | 2005-05-03 | 2006-11-04 | Atmel Corp | Metodo e sistema per la generazi0ne di impulsi di programmazione durante la programmazione di dispositivi elettronici non volatili |
| KR100824141B1 (ko) * | 2006-09-29 | 2008-04-21 | 주식회사 하이닉스반도체 | 반도체 메모리 소자 |
| US8085596B2 (en) * | 2007-09-11 | 2011-12-27 | Micron Technology, Inc. | Reducing noise in semiconductor devices |
| TWI739494B (zh) * | 2020-06-29 | 2021-09-11 | 華邦電子股份有限公司 | 感測放大裝置 |
| US11404110B2 (en) | 2020-07-14 | 2022-08-02 | Winbond Electronics Corp. | Sense amplification device in memory |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3572179B2 (ja) * | 1997-10-07 | 2004-09-29 | シャープ株式会社 | 不揮発性半導体記憶装置およびその書き込み方法 |
-
2000
- 2000-10-06 IT IT2000TO000936A patent/IT1320699B1/it active
-
2001
- 2001-10-04 US US09/972,726 patent/US6542404B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US6542404B2 (en) | 2003-04-01 |
| US20020048187A1 (en) | 2002-04-25 |
| IT1320699B1 (it) | 2003-12-10 |
| ITTO20000936A1 (it) | 2002-04-06 |
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