ITMI912236A0 - Struttura di interconnessione in un dispositivo a semiconduttore e relativo metodo - Google Patents
Struttura di interconnessione in un dispositivo a semiconduttore e relativo metodoInfo
- Publication number
- ITMI912236A0 ITMI912236A0 IT91MI2236A ITMI912236A ITMI912236A0 IT MI912236 A0 ITMI912236 A0 IT MI912236A0 IT 91MI2236 A IT91MI2236 A IT 91MI2236A IT MI912236 A ITMI912236 A IT MI912236A IT MI912236 A0 ITMI912236 A0 IT MI912236A0
- Authority
- IT
- Italy
- Prior art keywords
- semiconductor device
- interconnection structure
- interconnection
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/923—Active solid-state devices, e.g. transistors, solid-state diodes with means to optimize electrical conductor current carrying capacity, e.g. particular conductor aspect ratio
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/978—Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910004393A KR940000504B1 (ko) | 1991-03-20 | 1991-03-20 | 반도체장치의 층간콘택구조 및 그 제조방법 |
Publications (3)
Publication Number | Publication Date |
---|---|
ITMI912236A0 true ITMI912236A0 (it) | 1991-08-09 |
ITMI912236A1 ITMI912236A1 (it) | 1993-02-09 |
IT1251005B IT1251005B (it) | 1995-04-28 |
Family
ID=19312268
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITMI912236A IT1251005B (it) | 1991-03-20 | 1991-08-09 | Struttura di interconnessione in un dispositivo a semiconduttore e relativo metodo |
Country Status (8)
Country | Link |
---|---|
US (2) | US5285110A (it) |
JP (1) | JPH0831523B2 (it) |
KR (1) | KR940000504B1 (it) |
DE (1) | DE4126775C2 (it) |
FR (1) | FR2674372B1 (it) |
GB (1) | GB2253938B (it) |
IT (1) | IT1251005B (it) |
TW (1) | TW297908B (it) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE36475E (en) * | 1993-09-15 | 1999-12-28 | Hyundai Electronics Industries Co., Ltd. | Method of forming a via plug in a semiconductor device |
CN1049070C (zh) | 1994-06-08 | 2000-02-02 | 现代电子产业株式会社 | 半导体器件及其制造方法 |
US5627103A (en) * | 1995-03-02 | 1997-05-06 | Sony Corporation | Method of thin film transistor formation with split polysilicon deposition |
GB2333393B (en) * | 1995-08-19 | 2000-03-29 | Lg Electronics Inc | Wiring structure for a liquid crystal display device and a method of manufacturing the same. |
KR100338480B1 (ko) * | 1995-08-19 | 2003-01-24 | 엘지.필립스 엘시디 주식회사 | 액정표시장치및그제조방법 |
JP2005150339A (ja) * | 2003-11-14 | 2005-06-09 | Matsushita Electric Ind Co Ltd | 電極形成方法、容量素子及びその製造方法 |
EP4002437B1 (en) | 2020-09-22 | 2023-08-02 | Changxin Memory Technologies, Inc. | Method of forming a contact window structure |
CN114256135A (zh) * | 2020-09-22 | 2022-03-29 | 长鑫存储技术有限公司 | 开口结构及其形成方法、接触插塞及其形成方法 |
US11929280B2 (en) | 2020-09-22 | 2024-03-12 | Changxin Memory Technologies, Inc. | Contact window structure and method for forming contact window structure |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3518506A (en) * | 1967-12-06 | 1970-06-30 | Ibm | Semiconductor device with contact metallurgy thereon,and method for making same |
JPS6276653A (ja) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | 半導体集積回路 |
JPH0815152B2 (ja) * | 1986-01-27 | 1996-02-14 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JPS63268258A (ja) * | 1987-04-24 | 1988-11-04 | Nec Corp | 半導体装置 |
JPH0680733B2 (ja) * | 1987-11-12 | 1994-10-12 | 株式会社東芝 | 半導体装置の配線接続部 |
EP0383610B1 (en) * | 1989-02-17 | 1997-10-08 | Matsushita Electronics Corporation | Manufacturing method of semiconductor device |
JP3199717B2 (ja) * | 1989-09-08 | 2001-08-20 | 株式会社東芝 | 半導体装置およびその製造方法 |
-
1991
- 1991-03-20 KR KR1019910004393A patent/KR940000504B1/ko not_active IP Right Cessation
- 1991-08-05 TW TW080106140A patent/TW297908B/zh not_active IP Right Cessation
- 1991-08-06 FR FR9109992A patent/FR2674372B1/fr not_active Expired - Lifetime
- 1991-08-08 US US07/741,991 patent/US5285110A/en not_active Expired - Lifetime
- 1991-08-09 GB GB9117285A patent/GB2253938B/en not_active Expired - Lifetime
- 1991-08-09 IT ITMI912236A patent/IT1251005B/it active IP Right Grant
- 1991-08-13 DE DE4126775A patent/DE4126775C2/de not_active Expired - Lifetime
- 1991-08-30 JP JP3220575A patent/JPH0831523B2/ja not_active Expired - Fee Related
-
1992
- 1992-11-17 US US07/977,867 patent/US5320980A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2674372A1 (fr) | 1992-09-25 |
DE4126775A1 (de) | 1992-09-24 |
TW297908B (it) | 1997-02-11 |
JPH04320051A (ja) | 1992-11-10 |
ITMI912236A1 (it) | 1993-02-09 |
DE4126775C2 (de) | 1994-07-28 |
GB2253938B (en) | 1995-03-01 |
US5320980A (en) | 1994-06-14 |
US5285110A (en) | 1994-02-08 |
GB2253938A (en) | 1992-09-23 |
GB9117285D0 (en) | 1991-09-25 |
FR2674372B1 (fr) | 1994-04-15 |
KR940000504B1 (ko) | 1994-01-21 |
IT1251005B (it) | 1995-04-28 |
KR920018889A (ko) | 1992-10-22 |
JPH0831523B2 (ja) | 1996-03-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ITMI921651A1 (it) | Dispositivo a semiconduttore e suo metodo di fabbricazione | |
KR910007164A (ko) | 반도체장치 및 그 제조방법 | |
KR900019215A (ko) | 반도체장치 및 그의 제조방법 | |
ITMI912187A0 (it) | Metodo per la formazione di interconnessione multilivello in un dispositivo a semiconduttore | |
ITMI921873A0 (it) | Dispositivo semiconduttore e metodo per fabbicarlo | |
KR910008793A (ko) | 반도체장치 및 그 제조방법 | |
IT1248860B (it) | Dispositivo a semiconduttore e suo metodo di fabbricazione | |
EP0516279A3 (en) | An interconnection structure of a semiconductor device and a method of manufacturing thereof | |
KR890015408A (ko) | 반도체 기억장치 및 그 제조방법 | |
KR900019240A (ko) | 반도체기억장치 및 그 제조방법 | |
DE4407210B4 (de) | Halbleiterspeicherbauelementaufbau | |
KR910010721A (ko) | 반도체 기억장치 및 그 제조방법 | |
IT1248814B (it) | Dispositivo a semiconduttore e relativo metodo di fabbricazione | |
ITMI912236A0 (it) | Struttura di interconnessione in un dispositivo a semiconduttore e relativo metodo | |
IT9021853A0 (it) | Dispositivo di memoria a semiconduttore altamente integrato e suo metodo di fabbricazione | |
ITMI921295A0 (it) | Dispositivo di memoria a semiconduttore e procedimento per la sua fabbricazione | |
IT1202710B (it) | Dispositivo di sbarramento inseribile in una tubazione | |
KR900015301A (ko) | 반도체장치 및 그 제조방법 | |
ITMI912808A0 (it) | Dispositivo di memoria a semiconduttore | |
ITMI923001A1 (it) | Dispositivo di memoria a semiconduttore e suo metodo di funzionamento | |
KR900015277A (ko) | 반도체장치 및 그 제조방법 | |
KR900019242A (ko) | 반도체장치 및 그 제조방법 | |
ITMI911148A1 (it) | Struttura di contatto interstrato di un dispositivo a semiconduttore e suo metodo di fabbricazione | |
KR890015360A (ko) | 반도체장치 및 그 제조방법 | |
DE69219194D1 (de) | Josephsoneffekt-Halbleiteranordnung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted | ||
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970828 |